• The Korean Journal of Ceramics
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• v.2 no.3
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• pp.137-141
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• 1996

Ambient air aged anodically etched porous silicon (PS) and spark-processed silicon (sp-Si) show interesting similarities and dissimilarities in some of their luminescence-related properties. Among these similarties are: (1) the photoluminescence (PL) peak maximum in the blue/violet (410 nm);(2) the blue/violet PL peak positions are essentially unchanged with temperature ; (3) PL decay times in the nanosecond region which are independent of the detection wavelength, which is much faster in decay times compared to that of observed decay time in $SiO_2$.Among the dissimilarities are: (1) the PL intensity of blue/violet luminescence, namely, the PL intensity of sp-Si is at least 2 orders of magnitude larger than that of an ambient air aged PS; (2) the blue/violet PL intensity of sp-Si is more stable than that of ambient air aged PS under UV illuminations; (3) FTIR spectra of sp-Si favor those modes, which involve silicon -oxygen bonds in $SiO_2$ stoichiometry, whereas ambient air aged PS can be considered as a nonstoichiometric oxide judging from the observed vibrational spectra.

• Korean Journal of Optics and Photonics
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• v.8 no.3
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• pp.213-217
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• 1997

We have measured photoluminescence (PL) and time-resolved PL in doped-GaAs. As increasing doping concentration, the PL spectra of n-type GaAs shift to higher energies while the PL spectra of p-type GaAs shift to lower energies than the bandgap of the undoped GaAs. The contribution of the Burstein-Moss effect overrules the band-gap narrowing in n-type GaAs, contrary to p-type GaAs. The PL rise time and decay time become shorter as increasing doping concentration. The PL rise and decay time in doped-GaAs depend on the type of majority carriers and their concentrations, which imply that the carrier-carrier interaction plays an important role in the energy relaxation processes.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.08a
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• pp.93-93
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• 2003

Photoluminescence(PL) properties of Silicon nanocrystals (nc-Si) as a function of temperature is reported to consider the mechanism of PL. Nc-Si has been made by $Si^+$ ion-implantation into thermal $SiO_2$ and subsequent annealing. And after gold had been diffused at the same samples above, the resultant PL spectra has been compared to the PL spectra from the non-gold doped nc-Si. PL peak energy variation from nc-Si is same with the variation of energy bandgap of bulk silicon as temperature changes from 6 K to room temperature. This result may mean nc-Si is still indirect transition material like bulk silicon. Gold doped nc-Si reveals short peak wavelength of PL spectrum than gold undoped one. PL peak shift through gold doing process shows clearly the PL mechanism is not from defect or interface states. PL intensity increases from 6K to a certain temperature and then decrease to room temperature. This characteristic with temperature shows that phonon have a role for the luminescence as theory explains that electron and hole can be recombined radiatively by phonon's assist in nc-Si, which is almost impossible in bulk silicon. Therefore luminescence is observed in nc-Si constructed less than a few of unit cell and the peak energy of luminescence can be higher than the bulk bandgap energy by the bandgap widening effect occurs in nanostructure.

• Transactions on Electrical and Electronic Materials
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• v.1 no.3
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• pp.6-9
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• 2000

Selectively excited photoluminescence(PL) spectroscopy has been carried out on the ~1540 nm $^{4}$I$_{13}$ 3/ to $^{4}$I/wub 15/2/ emissions of the multiple Er$^{3+}$ centers observed in Er-implante undoped and Mg-doped GAN at temperatures ranging from 6K to 295K. The temperature dependence of the Er$^{3+}$ PL spectra selectively excited by below -gap light demonstrates different quenching rates for the distinct Er$^{3+}$ centers, and indicates that the PL spectra with the most rapid thermal quenching rats do not contribute to the room temperature, above-p-pumped Er$^{3+}$ spectrum. In addition, selective PL spectroscopy has ben carried out on the Er$^{3+}$ emission in Er-implanted undoped and Mg-doped GaN at temperatures ranging 6K to 295K. The results indicate that the previously reported enhancement of the violet-pumped centers contribution to the low temperature above excited Er$^{3+}$ PL in Mg-doped GaN is also evident at room temperature.temperature.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.149-149
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• 2010

The origin of the inhomogeneous distribution of photoluminescence (PL) peak wavelength on a commercial 2" GaN wafer for green light emitting diode has been investigated by wide momentum transfer (Q) range x-ray diffraction (XRD) profile of InGaN/GaN multiple quantum wells. Near the GaN (0004) Bragg peak, wide-Q range XRD (${\Delta}Q$ > $1.4{\AA}-1$) was measured along the growth direction. Wide-Q XRD gives precise and direct information of ultra-thin InGaN quantum well structure. Based on the QW structural information, the variation of PL spectra can be explained by the combined effect of temperature gradient and slightly uneven flow of atomic sources during the QW growth. In narrow variations of indium composition and thickness of QW, an effective indium composition can be a good character to match structural data to PL spectra.

• Journal of Information Display
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• v.5 no.4
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• pp.12-17
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• 2004

A series of statistical random copolymers of dioctylfluorene (DOF) and 3,4-ethylenedioxythiophene (EDOT) were synthesized by Ni (0) mediated polymerization and their light-emitting properties were compared with poly (9,9-di-n-octylfluorene) (PDOF). The synthesized polymers were characterized using UV-vis spectroscopy, TGA, photoluminescence (PL) & electroluminescence (EL) spectroscopy and by conducting molecular weight studies. The resulting polymers were found to be thermally stable and readily soluble in organic solvents. The UV-visible absorption and PL emission spectra of the copolymers were gradually red-shifted as the fraction of EDOT in copolymers increased. Light-emitting devices were fabricated in an ITO (indium-tin oxide)/PEDOT/polymer/Ca/Al configuration. Interestingly, the EL spectra of these devices were similar to the PL spectra of the corresponding polymer film. However, the EL devices constructed from the copolymer showed more than 10 times higher efficiency level than the devices constructed from the PDOF homopolymer. This higher efficiency is possibly the result of better charge carrier balance in the copolymer systems due to the lower HOMO levels of the copolymers in comparison to that of PDOF homopolymer.

• Journal of the Korean institute of surface engineering
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• v.53 no.4
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• pp.131-137
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• 2020

A series of Dy³⁺, Sm³⁺, and Dy³⁺/Sm³⁺ doped Gd₂WO₆ phosphors were synthesized by the conventional solid-state reaction. The X-ray diffraction patterns revealed that all of the diffraction peaks could be attributed to the monoclinic Gd₂WO₆ crystal structure, irrespective of the type and the concentration of activator ions. The photoluminescence (PL) excitation spectra of Dy³⁺-doped Gd₂WO₆ phosphors contained an intense charge transfer band centered at 302 nm in the range of 240-340 nm and two weak peaks at 351 and 386 nm. Under an excitation wavelength of 302 nm, the PL emission spectra consisted of two strong blue and yellow bands centered at 482 nm and 577 nm. The PL emission spectra of the Sm³⁺-doped Gd₂WO₆ phosphors had a series of three peaks centered at 568 nm, 613 nm, and 649 nm, corresponding to the ⁶G_5/2 → ⁶H_5/2, ⁶G_5/2 → ⁶H_9/2, and ⁶G_5/2 → ⁶H_11/2 transitions of Sm³⁺, respectively. The PL emission spectra of the Dy³⁺- and Sm³⁺-codoped Gd₂WO₆ phosphors showed the blue and yellow emission lines originating from the ⁴F_9/2 → ⁶H_15/2 and ⁴F_9/2 → ⁴H_13/2 transitions of Dy³⁺ and reddish-orange and red emission bands due to the ⁴G_5/2 → ⁶H_7/2 and ⁴G_5/2 → ⁶H_9/2 transitions of Sm³⁺. As the concentration of Sm³⁺ increased from 1 to 15 mol%, the intensities of two PL spectra emitted by the Dy³⁺ ions gradually decreased, while those of the three emission bands due to the Sm³⁺ ions slowly increased, thus producing the color change from white to orange. The CIE color coordinates of Gd₂WO₆:5 mol% Dy³⁺, 1 mol% Sm³⁺ phosphors were (0.406, 0.407), which was located in the warm white light region.

• Korean Journal of Materials Research
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• v.4 no.4
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• pp.379-384
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• 1994

Room-temperature photoluminescent porous Si has been formed by etching Si wafer u-ith the solution of $HF:HNO_{3}: H_{2}O$=l : 5 : 10. We have observed photoluminescence(PL) spectra similar to those reported recently for porous-Si films formed by anodic etching with HF solutions. We have also investigated the dependence of PI, spectra on the etching time which was varied from 1 to 10 minutes. We found that 5-minute etching gave us the strongest PL intensity. We also found by atomic force microscopy( AFM) measurements that the surface fearure size became smaller for longer etching time and the average feature size of the etched Si wafer for 5-minute was about 1, 500~2, 000$\AA$. This indicates that the surface feature of the etched porous Si affects the PL intensity of the sample.

• Advances in nano research
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• v.5 no.3
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• pp.261-279
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• 2017

Spectroscopic investigation of Si quantum dots (Si-QDs) embedded in silicon nitride was performed over a broad stoichiometry range to optimize light emission. Plasma-enhanced chemical vapor deposition was used to grow the $SiN_x$ films on Si (001) substrates. The film composition was controlled via the flow ratio of silane ($SiH_4$) and ammonia ($NH_3$) in the range of R = 0.45-1.0 allowed to vary the Si excess in the range of 21-62 at.%. The films were submitted to annealing at $1100^{\circ}C$ for 30 min in nitrogen to form the Si-QDs. The properties of as-deposited and annealed films were investigated using spectroscopic ellipsometry, Fourier transform infrared spectroscopy, Raman scattering and photoluminescence (PL) methods. Si-QDs were detected in $SiN_x$ films demonstrating the increase of sizes with Si excess. The residual amorphous Si clusters were found to be present in the films grown with Si excess higher than 50 at.%. Multi-component PL spectra at 300 K in the range of 1.5-3.5 eV were detected and nonmonotonous varying total PL peak versus Si excess was revealed. To identify the different PL components, the temperature dependence of PL spectra was investigated in the range of 20-300 K. The analysis allowed concluding that the "blue-orange" emission is due to the radiative defects in a $SiN_x$ matrix, whereas the "red" and "infrared" PL bands are caused by the exciton recombination in crystalline Si-QDs and amorphous Si clusters. The nature of radiative and no radiative defects in $SiN_x$ films is discussed. The ways to control the dominant PL emission mechanisms are proposed.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.170.2-170.2
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• 2015

Enormous interest in trivalent rare-earth (RE) ions activated luminescent materials has been gaining owing to their promising applications in bio-imaging, solar cells, white light-emitting diodes and field-emission displays. Among these trivalent RE ions, dysprosium (Dy3+) was widely investigated due to its unique photoluminescence (PL) emissions. A series of Dy3+-activated CaWO4 phosphors were prepared by a facile high-temperature solid-state reaction method. The X-ray diffraction, PL spectra, cathodoluminescence (CL) spectra as well as PL decay curves were used to characterize the prepared samples. Under ultraviolet light excitation, the characteristic emissions of Dy3+ ions were observed in all the obtained phosphors. Furthermore, the PL emission intensity increased gradually with the increment of Dy3+ ion concentration, reaching its maximum value at an optimized Dy3+ ion concentration. Additionally, color-tunable emissions were obtained in Dy3+-activated CaWO4 system by adjusting the Dy3+ ion concentration and excitation wavelength. Ultimately, strong CL properties were observed in Dy3+-activted CaWO4 phosphors. These results suggested that the Dy3+-activted CaWO4 phosphors may have potential applications in the field of miniature color displays.