• Korean Journal of Metals and Materials
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• v.50 no.1
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• pp.23-27
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• 2012

The color of a natural diamond that contains nitrogen impurities can be enhanced by a high pressure high temperature (HPHT) treatment. Type IaAB diamond samples containing nitrogen impurities were executed by HPHT process of 5.6 Gpa, 10 min by varying the annealing temperature at 1600, 1650, and $1700^{\circ}C$. Property characterization was carried out using an optical microscope, FT-IR spectrometer, low-temperature PL spectrometer, and micro Raman spectrometer. By observing optical micrographs, it can be seen that diamond sample began to alter its color to vivid yellow at $1700^{\circ}C$. In the FT-IR spectrum, there were no Type changes of the diamond samples. However, amber centers leading to brown colors lessened after $1700^{\circ}C$ annealing. In the PL spectrum, all the H4 centers became extinct, while there were no changes of yellow color center H3 before or after treatment. In the Raman spectrum, no graphite spots were detected. Consequently, diamond color enhancement can be done by higher than $1700^{\circ}C$ HPHT annealing at 5.6 GPa-10 min.

• Textile Coloration and Finishing
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• v.19 no.6
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• pp.35-38
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• 2007

FTriphenylamine dye compound having diheteryl moiety was synthesized and its photoluminescent property was investigated. Organic luminescent materials have received great attentions due to potential application subjects onto full color image displays. In this context, the dye (III) for light emitting materials was synthesized using 2-(4-amino-2-hydroxyphenyl)benzoxazole (I) and 4,4'-diformyltriphenylamine (II). It is well known that the amino groups of compound (I) react with carbonyl groups, especially an aldehyde, to afford azomethine linkages. The dye shows bulish-green fluorescence property, which is anticipated for the light-emitting material for display devices. In this context, our aim is to synthesize diheteryl-substituted triphenylamine fluorescent dye as an emitting material. The spectroscopic characteristics and the fluorescent properties of this dye molecule were examined and determined.

• Korean Journal of Materials Research
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• v.27 no.10
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• pp.534-543
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• 2017

$Gd_2O_3:Eu^{3+}$ red phosphors were prepared by template method from crystalline cellulose impregnated by metal salt. The crystallite size and photoluminescence(PL) property of $Gd_2O_3:Eu^{3+}$ red phosphors were controlled by varying the calcination temperature and $Eu^{3+}$ mol ratio. The nano dispersion of $Gd_2O_3:Eu^{3+}$ was also conducted with a bead mill wet process. Dependent on the time of bead milling, $Gd_2O_3:Eu^{3+}$ nanosol of around 100 nm (median particle size : $D_{50}$) was produced. As the bead milling process proceeded, the luminescent efficiency decreased due to the low crystallinity of the $Gd_2O_3:Eu^{3+}$ nanoparticles. In spite of the low PL property of $Gd_2O_3:Eu^{3+}$ nanosol, it was observed that the photoluminescent property was recovered after re-calcination. In addition, in the dispersed nanosol treated at $85^{\circ}C$, a self assembly phenomenon between particles appeared, and the particles changed from spherical to rod-shaped. These results indicate that particle growth occurs due to mutual assembly of $Gd(OH)_3$ particles, which is the hydration of $Gd_2O_3$ particles, in aqueous solvent at $85^{\circ}C$.

• Composites Research
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• v.18 no.6
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• pp.48-53
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• 2005

In this study, to improve the ballistic efficiency of very brilliant alumina-silica armor material, forming press and sintering temperature were changed. After physical/mechanical measurement, we measured ballistic properties about KE(Kinetic Energy, L/D=10.7, tungsten heavy alloy) and HEAT(High Explosive Anti-Tank, K215) projectiles and analyzed them. As a result, in $1235^{\circ}C$, it appeared the highest ballistic efficiency about HEAT and it improved $22\%$ ballistic efficiency, better than invented alumina-silica armor material before.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.355-357
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• 2001

ZnO thin films were deposited on (001) sapphire substrate at various ambient gas pressure by pulsed laser deposition(PLD). Oxygen was used as ambient gas, and oxygen gas pressure was varied from 1.0${\times}$10$\^$-6/ Torr to 500 mTorr during the film deposition. As oxygen gas pressure increase in the region below critical pressure photoluminescence(PL) intensity in UV and green region increase. As oxygen gas pressure increase in the region above critical pressure photoluminescence(PL) intensity in UV and green region decrease. Each of critical ambient gas Pressures was 350 mTorr for UV emission and 200 mTorr for green emission.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.1568-1571
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• 2005

We have evaluated thermal stability of a $BaAl_2Si_2O_8:Eu^{2+}$ $(BAS:Eu^{2+})$, which have polymorph property such as hexagonal, monoclinic structure depending upon firing temperature. When both polymorph $BAS:Eu^{2+}$ were baked in air at 500 $^{\circ}C$ for 30 min, the photoluminescence (PL) intensity of $monoclinic-BAS:Eu^{2+}$ was maintained of the initial intensity. However, the PL intensity of $hexagonal-BAS:Eu^{2+}$ decreased significantly, corresponding to about 34 %. From analyses of Rietveld refinement, the difference of thermal stability of both $BAS:Eu^{2+}$ can be ascribed to both crystal structure of host materials and the average interatomic distances between $Eu^{2+}$ ion and oxygen their crystal structure which plays a key role of shield for Eu2+ ions against oxidation atmosphere.

• Proceedings of the Optical Society of Korea Conference
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• 2000.02a
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• pp.264-265
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• 2000

1차원 반도체 구조인 양자 줄(Quantum Wire)은 새로운 물리 현상의 가능성을 보여줄 것으로 기대된다.$^{(1)(2)}$ 이 구조에서 운반자는 2차원 퍼텐셜에 가두어지므로 1차원 퍼텐셜인 양자 우물에 갇힌 운반자 보다 더 많이 양자화가 이루어져 이 운반자의 상태 에너지는 더 쪼개지며, 양자 줄의 상태 밀도는 에너지 준위에 대해 계단 함수가 아닌 변형된 Dirac $\delta$ 함수꼴을 가진다.$^{(3)}$ 그러나, 1차원 반도체 구조인 양자 줄이 나노(nano) 크기 내에서 만들어져야 하므로, 잘 정의된 양자 줄을 만드는 일은 기술상 매우 어려운 일이다. 양자 우물 구조에서 운반자는 결정을 키우는 방향을 따라 나노 크기의 활성 영역 안에 가두어지게 된다. 양자 줄 구조에서의 운반자는 결정 성장 방향뿐만 아니라 수직인 한 방향에서 각각 나노 크기를 갖는 활성 영역에 가두어져야 한다. 여기에서, 결정 성장 방향과 수직으로 활성 영역을 정의하는 것은, 결정 성장 방향과 평행하게 활성 영역을 정의하는 것보다 어려운 일이다. (중략)

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.10a
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• pp.56-58
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• 2000

We have synthesized the new blue electroluminescent material, Bis(3-N-ethylcarbazolyl)cyanoisophthalidene(BECCIP), and characterized its properties by UV/visible absorption, photoluminescent(PL) and electroluminecent(EL) spectrum. This material is well vacuum-deposited for thin film and has dear surfaced thin film property. The BECCIP shows blue PL and EL spectra at around at 485nm.

• 한국정보디스플레이학회:학술대회논문집
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• 2002.08a
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• pp.803-806
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• 2002

Flame spray pyrolysis was applied to improve the photoluminescence characteristics of blue-emitting $Sr_5(PO_4)_3Cl:Eu^{2+}$ phosphor particles with high brightness for the application to LED phosphor. $Sr_5(PO_4)_3Cl:Eu^{2+}$ prepared from conventional spray pyrolysis had poor PL intensity than that of commercial products under long-wavelength ultraviolet(UV). $Sr_5(PO_4)_3Cl:Eu^{2+}$ phosphor particles prepared by flame spray pyrolysis had PL intensity as same as that of commercial products under long-wavelength UV. Hollow morphology and porous structure of the particles prepared by the flame spray pyrolysis disappeared after posttreatment. Even though the $Sr_5(PO_4)_3Cl:Eu^{2+}$ phosphor particles prepared by the flame spray pyrolysis had irregular shape, the particles had dense structure and clear surface property.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.1
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• pp.65-69
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• 2003

ZnO-Si-ZnO multi-layer thin films have been deposited by pulsed laser deposition (PLD). And then, the films have been annealed at 300$^{\circ}C$ in oxygen ambient pressure. Peak positions of ultraviolet (UV) and visible region were changed by addition of Si layer. Mobility of the films was improved slightly than ZnO thin film without Si layer. The structural property changed by inserting intermediate Si layer in ZnO thin film. The optical properties and structural properties of ZnO-Si-ZnO multi-layer thin films were characterized by PL(Photoluminescence) and XRB(X-ray diffraction) method, respectively. Electrical properties were measured by van der Pauw Hall measurements