• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.2
• /
• pp.968-971
• /
• 2003

Due to a low efficiency of phosphor with large Stoke shift in Vacuum Ultra Violet (VUV) excitation environment, new PDP phosphors which can be excited in UV excitation environment need to be developed. In this study, $Zn_2SiO_4:Tb$ phosphor was synthesized by solid-state reaction method at $1300^{\circ}C$ with varying Tb concentration, and its cross relaxation effect was observed by Photoluminescence (PL) measurement. In order to decrease $^5D_3{\to}7F_j$ transition with blue emission in $Zn_2SiO_4:Tb$ phosphor, Dy, co-activator element, was added to $Zn_2SiO_4:Tb$ phosphor. In 254nm excitation environment, broad-emission peak was observed around 524nm, green emission.

• 한국전기전자재료학회논문지
• /
• 제24권12호
• /
• pp.992-995
• /
• 2011

The optical properties of ZnO thin film, being treated by O-plasma, have been studied using Photoluminescence(PL) spectroscopy with the change of temperature from 10 K to 290 K. Two characteristic peaks were identified at 10 K : 3.357 eV($D^{\circ}X$) and 3.324 eV(TES). The peak of $D^{\circ}X$ is believed to be due to neutral donor bound excitons where the donor is in the ground state. However, the TES(Two Electron Satellite) peak indicates the excited state of the donor(excitation energy was ~30 meV). The donor binding energy was estimated to be 44 meV, which indicates the possible presence of the neutral donor bound excitons at RT. The thermal effect including thermal broadening was identified from temperature evolution of the spectrum. Both the peak intensity and the peak energy have decreased as the temperature increases. As the temperature approaches to RT, the two peak merges into one broad peak, which is considered a combination of multiple peaks having different physical origins.

• 한국전기전자재료학회논문지
• /
• 제17권1호
• /
• pp.89-93
• /
• 2004

Piezoelectric fields built in I $n_{x}$G $a_1$$_{-x}$N/GaN (x=0.06∼0.1) quantum wells (QWs) have been estimated by comparing the transition energies, both calculated and measured by photoluminescence (PL). The calculation was numerically carried out with a rectangular QW model, where the effective bandgap considering a bowing facto, energy levels quantized for the lowest lying electrons and heavy holes (1e-lhh), and biaxial compressive strain were included except for the piezoelectric fields. The calculated values were observed to be larger (9∼15 meV) than the measured values by PL, which was considered to be caused by the piezoelectric fields built in InGaN/GaN QW interface. In addition, we observed the energy shift by measuring the EPDPL (excitation power-dependent PL), which was compared with the energy difference caused by the piezoelectric fields.

• 한국진공학회지
• /
• 제21권6호
• /
• pp.342-347
• /
• 2012

Migration-enhanced molecular beam epitaxy법을 이용하여 GaAs 기판에 성장한 InAs 양자점(quantum dots: QDs)의 광학적 특성을 PL (photoluminescence)과 time-resolved PL을 이용하여 분석하였다. 시료 온도, 여기 광의 세기, 발광 파장에 따른 InAs/GaAs QDs (QD1)과 $In_{0.15}Ga_{0.85}As$ 캡층을 성장한 InAs/GaAs QDs (QD2)의 발광특성을 연구하였다. QD2의 PL 피크는 QD1의 PL 피크보다 장파장에서 나타났으며, 이것은 InGaAs 캡층의 In이 InAs 양자점으로 확산되어 양자점의 크기가 증가한 것으로 설명된다. 10 K에서 측정한 QD1과 QD2의 PL 피크인 1,117 nm와 1,197 nm에서 PL 소멸시간은 각각 1.12 ns와 1.00 ns이고, 발광파장에 따른 PL 소멸시간은 PL 피크 근처에서 거의 일정하게 나타났다. QD2의 PL 소멸시간이 QD1보다 짧은 것은 QD2의 양자점이 커서 파동함수 중첩이 향상되어 캐리어 재결합이 증가한 때문으로 설명된다.

• 한국진공학회지
• /
• 제15권2호
• /
• pp.201-208
• /
• 2006

전류 차단층으로서 AlAs 자연산화층 ($AlO_x$) 을 갖는 InGaAs 양자점 (quantum dot) 구조를 분자선 박막 성장법 (molecular-beam epitaxy)과 습식 산화법 (wet oxidation)을 이용하여 제작하였고, 이들 구조의 열처리에 따른 광학적인 특성 변화를 photoluminescence (PL), PL excitation, 그리고 공간 분해능을 갖는 micro-PL을 이용하여 분석하였다. 습식 산화와 열처리 과정을 통해 intermixing된 InGaAs 양자점 영역에서 PL 특성을 조사한 결과, intermixing 되지 않은 영역보다 높은 에너지에서 완만한 PL peak이 추가적으로 관측되었다. 산화되지 않은 (non-oxided) AlAs 아래에 있는 InGaAs 양자점 영역에서는 약 1.1 eV에서 PL emission이 주로 관측되었으나, $AlO_x$와 $SiN_x$에 의해 intermixing 된 InGaAs 양자점 영역에서는 각각 약 1.16 eV와 $1.18{\sim}1.20$ eV 에서의 PL emission도 함께 관측되었다. 실험 결과, $AlO_x$층이 있는 InGaAs 양자점 영역이 산화 되지 않은 AlAs층이 있는 영역에 비해서 intermixing 효과가 크게 작용함을 알 수 있었다.

• 한국표면공학회지
• /
• 제53권4호
• /
• pp.131-137
• /
• 2020

A series of Dy³⁺, Sm³⁺, and Dy³⁺/Sm³⁺ doped Gd₂WO₆ phosphors were synthesized by the conventional solid-state reaction. The X-ray diffraction patterns revealed that all of the diffraction peaks could be attributed to the monoclinic Gd₂WO₆ crystal structure, irrespective of the type and the concentration of activator ions. The photoluminescence (PL) excitation spectra of Dy³⁺-doped Gd₂WO₆ phosphors contained an intense charge transfer band centered at 302 nm in the range of 240-340 nm and two weak peaks at 351 and 386 nm. Under an excitation wavelength of 302 nm, the PL emission spectra consisted of two strong blue and yellow bands centered at 482 nm and 577 nm. The PL emission spectra of the Sm³⁺-doped Gd₂WO₆ phosphors had a series of three peaks centered at 568 nm, 613 nm, and 649 nm, corresponding to the ⁶G_5/2 → ⁶H_5/2, ⁶G_5/2 → ⁶H_9/2, and ⁶G_5/2 → ⁶H_11/2 transitions of Sm³⁺, respectively. The PL emission spectra of the Dy³⁺- and Sm³⁺-codoped Gd₂WO₆ phosphors showed the blue and yellow emission lines originating from the ⁴F_9/2 → ⁶H_15/2 and ⁴F_9/2 → ⁴H_13/2 transitions of Dy³⁺ and reddish-orange and red emission bands due to the ⁴G_5/2 → ⁶H_7/2 and ⁴G_5/2 → ⁶H_9/2 transitions of Sm³⁺. As the concentration of Sm³⁺ increased from 1 to 15 mol%, the intensities of two PL spectra emitted by the Dy³⁺ ions gradually decreased, while those of the three emission bands due to the Sm³⁺ ions slowly increased, thus producing the color change from white to orange. The CIE color coordinates of Gd₂WO₆:5 mol% Dy³⁺, 1 mol% Sm³⁺ phosphors were (0.406, 0.407), which was located in the warm white light region.

• Journal of Advanced Marine Engineering and Technology
• /
• 제29권7호
• /
• pp.795-800
• /
• 2005

The optical properties of $ZnS_{y}Se_{1-x-y}:Te_x\;(x\;<\;0.08,\;y\∼0.11$) alloys grown by molecular beam epitaxy (MBE) have been investigated by photoluminescence (PL) and PL-excitation (PLE) spectroscopy. Good optical properties and high crystal quality were established with lattice match condition to GaAs substrate. At room temperature, emission in the visible spectrum region from blue to green was obtained by varying the Te content of the ZnSSe:Te alloy. The efficient blue and green emission were assigned to $Te_{1}$Tel and $Te_{n}$ (n$\geq$2) cluster bound excitons, respectively. Bright blue (462 nm) and green (535 nm) light emitting diodes (LEDs) have been developed using ZnSSe:Te system as an active layer.

• Rapid Communication in Photoscience
• /
• 제4권4호
• /
• pp.76-78
• /
• 2015

We report on the photoluminescence (PL) properties of poly[2,7-(9-9-dioctylfluorene)] (PF) thin film under strong optical pumping using a streak camera system. When the excitation energy density increases above $72{\mu}J{\cdot}cm^{-2}$, the emission spectrum becomes narrower and PL decay curve comes to be faster simultaneously. These behaviors are clear evidence of Amplified Spontaneous Emission (ASE) due to a waveguided Stimulated Emission in slab structure of thin film. ASE threshold of $72{\mu}J{\cdot}cm^{-2}$ is comparable with previous reports and PF is attractive as a gain medium for plastic lasers.

• Journal of Advanced Marine Engineering and Technology
• /
• 제27권1호
• /
• pp.33-41
• /
• 2003

The optical properties of $ZnS_ySe_{1-\chi-y}:Te_{\chi}(\chi<0.08,y~0.11)$ alloys grown by molecular beam epitaxy (MBE) have been investigated by photoluminescence (PL) and PL-excitation (PLE) spectroscopy. Good optical properties and high crystal quality were established with lattice match condition to GaAs substrate. At room temperature, emission in the visible spectrum region from blue to green was obtained by varying the Te content of the ZnSSe:Te alloy. The efficient blue and green emission were assigned to $Te_1 and Te_n(n\geq2)$cluster bound excitons, respectively. Bright green (535 nm) and blue (462 nm) light emitting diodes (LEDs) have been developed using ZnSSe:Te system as an active layer. The turn-on voltage of 2.1 V in current-voltage characteristics is very small compared to that of commercial InGaN-based LEDs (>3.4 V), indicating the formation of a good ohmic contact due to the optimized p-ZnSe/p-ZnTe multi-quantum well (MQW) superlattice electrode layers.

• 한국정보디스플레이학회:학술대회논문집
• /
• 한국정보디스플레이학회 2008년도 International Meeting on Information Display
• /
• pp.561-564
• /
• 2008

$Ba_{1-x}M_xGa_2S_4:Eu^{2+}$ (M = Ca, Sr) phosphor was prepared for white light emitting diodes application. Photoluminescence (PL) emission and excitation bands were red-shifted with increase of Ca and Sr content due to the crystal field effect. Moreover, the PL intensity under 450 nm was increased by substitution of Ca and Sr.