• Journal of Advanced Marine Engineering and Technology
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• 제15권1호
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• pp.71-74
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• 1991

Uncertainty analyses accompanied by the measurement of the velocity vectors in 3-D cavity flows are carried out. Twenty-one elemental errors are esimated or calculated according to the ANIS/ASME uncertainty analysis manual. Error components associater with the PIV(Particle Imaging Velocimetry) are reasonably small and the errors caused by the flow characteristics are fairly large, which confirm the reliability of the PIV measurement and also give good information to the planning phase of the experiment by discriminating the most critical parameter. The present study reveals that vector length expressed by pixels is the most influential. Calculated relative uncertainty for the all experimental conditions is ranging about 5-10% in terms of the representative velocity 0.5U. U is here the belt velocity on the cavity apparatus. Approximating equations to show the relative rss uncertainties are given and graphic representations are followed for the easier understanding of the uncertainty, existing in the velocity profiles of the cavity flow.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.848-850
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• 2001

In this work, we investigated on the white-colored ribbon fiber synthesized from GaN powder. We convinced the formation of monoclinic phase $\beta$-Ga$_2$O$_3$from the X-ray diffraction pattern on ribbon fiber. The 10 K PL spectrum consisted with the strong emission band caused by self-activated optical center at 3.464 eV with the full-width at half maximum of 48 meV and the impurity related emission bands. Through this work, the optical properties and the electrical conductivity of $\beta$-Ga$_2$O$_3$, it will be useful for the fabrication of optoelctronic devices operating in visible spectrum region.

• 통합자연과학논문집
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• 제3권3호
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• pp.133-137
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• 2010

New synthetic route and characterization of alkyl-capped nanocrystalline silicon (R-n-Si) were achieved from the reaction of silicon tetrachloride with sodium/benzophenone ketal reducing agent followed by n-butyllithium. Surface of silicon nanoparticles was derivatized with butyl group. Effect of oxidation of silicon nanoparticle with benzophenone was investigated for their stabilization. Optical characteristics of silicon nanoparticles were characterized by fourier transform infrared spectroscopy (FT-IR), ultraviolet-visible spectroscopy (UV-vis), and photoluminescence (PL) spectroscopy. Butyl-capped silicon nanoparticles exhibited an emission band at 410 nm with excitation wavelength of 360 nm. Average size of n-butyl-capped silicon nanoparticles was obtained by particle size analyzer (PSA) and transmission electron microscopy (TEM). Average size of n-butyl-capped Si nanoparticles was about 6.5 nm.

• 대한안전경영과학회지
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• 제10권3호
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• pp.1-8
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• 2008

Risk is the probability of an adverse event given exposure to hazard. There are many reason for unsafety situation without safety operation. The reason is no safety evaluation system in small enterprise. And then this study purposes safety management activities that is evaluation system for total safety efficiency's maximization. Therefore, in this study, this model that can evaluate quantitative activities in small enterprise that maximize safety efficiency wishes to do design using balanced scorecard. In other words, this study aims to suggest a performance measurement model reflecting the characteristics of safety evaluation system, especially the model for return manufacturing related to safety, and to develop the S-BSC(Safety-Balanced ScoreCard) measurement model using a weight lifetime value to which a relative weight is applied by using AHP based on the BSC.

• Journal of Korean Vacuum Science & Technology
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• 제6권1호
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• pp.51-54
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• 2002

Polymer EL devices of glass/ITO/PI/MEH-PPV/Al structure were fabricated using spin coating and the Ionized Cluster Beam deposition technique. PMDA-ODA type thin polyimide films which can be used as a impurity blocking layer of EL device were deposited by ICB. According to our previous results, the packing densities of polyimide films were subject to change and depend on their deposition condition. By inserting a Pl layer with various thickness and packing density, I-V characteristics and life time of the devices were investigated to determine the role of a interlayer. The blocking of impurity diffusion from ITO to luminescent layer were confirmed by XPS.

• 한국결정성장학회지
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• 제7권2호
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• pp.271-275
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• 1997

HWE방법으로 GaAs 기관위에 Cl이 첨가된 ZnSe 박막을 성장하였다. 성장된 박막의 표면 상태는 경면이 있었으며 좋은 결정성과 낮은 비저항 n 형 전도성을 나타내었다. 성장된 박막의 운반자 농도는 $10^{16}Cm{-3}$ 정도였으며 비저항값은 10$\\Omega$\cdotcm였다. 실온에서 청색 발광을 하는 photoluminescence를 나타내었다. 나타내었다.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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• pp.578-580
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• 2008

Blue-emitting $CaAl_2Si_2O_8:Eu^{2+}(CAS:Eu^{2+})$ phosphor, prepared by solid-state reaction, is described in this paper. We researched the effect of boron ion substitution in the host materials. The phase and luminescent properties were investigated using the powder X-ray diffraction(XRD) and photoluminescence(PL) spectra.

• 한국전기전자재료학회논문지
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• 제15권8호
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• pp.726-730
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• 2002

Electro-optical (EO) performances of the ion beam (IB) aligned twisted-nematic (TN)-liquid crystal display (LCD) with ion beam exposure on the new diamond-like carbon (DLC) thin film surface were investigated. A good voltage-transmittance (V-T) curve of the ion beam aligned TN-LCD with oblique ion beam exposure on the DLC thin film surface for 1 min was observed. Also, the fast response time of the ion beam aligned TN-LCD with oblique ion beam exposure on the DLC thin film surface for 1 min can be achieved. Finally, the residual DC voltage of the ion beam aligned TN-LCD on the DLC thin film surface is almost the same as that of the rubbing aligned TN-LCD on a polyimide (Pl) surface.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1998년도 하계학술대회 논문집 D
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• pp.1249-1251
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• 1998

We have studied the properties of $GaAs_{0.35}P_{0.65}$ epitaxial films on the GaP according to doping of $NH_3$ gas using VPE method by CVD. The efficiency of $GaAs_{0.35}P_{0.65}$ epitaxial films found to be greatly enhanced by the according of nitrogen doping. The diodes were fabricated by means of Zn diffusion into vapor grown $GaAs_{0.35}P_{0.65}$ epitaxial films doped with N and Te. The effects of nitrogen doping on carrier density of epitaxial films, PL wavelength and the power out, forward voltage of diodes are discussed. In the end, The effect of electrical and optical properties is influenced by the deep level and deep level density of nitrogen doping.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 춘계학술대회 논문집 디스플레이 광소자 분야
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• pp.49-52
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• 2002

Degradation characteristics of cathodoluminescence (CL) of ZnS:Ag,Cl phosphor were investigated with measurements of CL and photoluminescence (PL). Phosphoric acid treatment was performed to phosphor particles in order to improve CL degradation of phosphor screen that occurred during panel sealing process, and we will discuss mechanisms of degradation and improvement of luminescence mainly with help of AES (auger electron spectroscopy) analysis.