• ETRI Journal
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• v.28 no.5
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• pp.555-560
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• 2006

A PIN photodiode having a low dark current of 1.35 nA and a high external quantum efficiency of 95.3% fabricated for a passive optical network receiver. As the current was increased under a high voltage of 38 V and a temperature of $190^{\circ}C$, it was observed that there is a threshold current at 11 mA which induces a junction failure. Experimental data suggest that the junction failure occurs due to the crystal breaking at the end facet as a result of thermal heat or energetic carriers. This threshold behavior of junction failure is a valuable observation for the safe treatment of photodiodes. As long as the current is limited below the threshold currents, we have not observed failure events of our photodiodes.

• ETRI Journal
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• v.13 no.4
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• pp.52-57
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• 1991

We fabricated very high. speed PIN Photodiode module for the application of high speed optical receiver. OMVPE was used for the growth of InP layer on InGaAs absorption layer. The structure was the combination of mesa and planartype. Fabrication procedure was more complicated than simple mesa or simple planar type structure because we used semiinsulating InP substrate in order to reduce stray capacitance. The results at-5V were as follows : dark current was less than 1nA, capacitance was 0.55pF, and cutoff frequency was above 3GHz, and rise and fall time was about 100ps.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.11 no.9
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• pp.3517-3523
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• 2010

Single exposure dual X-ray imaging can be used to separate soft and dense-material images for medical and industrial applications. This study keep focusing baggage inspection system(BIS) specifically. New detector modules for single exposure dual X-ray imaging are consisted of low energy detector (LED) and high energy detector (HED). First, the optimized thickness of copper filter coupled HED to separate low energy and high energy was simulated by the given X-ray energy (140 kVp, 1 mA) using Monte Carlo simulation codes, MCNPX. So as a result of simulation, the copper filter thickness is 0.7 mm. For the design of PIN photodiode, ATLAS device simulation tool was used. 16 channels PIN photodiode of 1.5 mm ${\times}$ 3.2 mm for Dual X-ray imaging detector was fabricated in the process of ETRI. And its dark current and quantum efficiency, terminal capacitance were measured. It was proven that the Lanex Fast B coupled HED were a sufficient candidate to replace the CsI(Tl) commerced in dual X-ray system, since these give a strong signal, overcoming system noise. Finally dual X-ray image was acquired through correction of the LED X-ray Image and the HED X-ray Image.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.19 no.1
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• pp.136-142
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• 2005

In this paper, we wrote about the basic experimentation of Optical CT's temperature characteristic to measure high-current in a super-high-voltage electric power equipment which is using Faraday effect. We used the 1310[nm] Laser Diode as the light source and PIN Photodiode as receiver. For the transmission line of light, we used 30[m] single mode fiber which could maintain the state of polarization in the optical fiber. For the experiment, the temperature transformation device make by aluminium. the The range of current was from 400[A] and 1300[A] and the range of temperature was from $-40[^{\circ}C]\;to\;50[^{\circ}C]$. In a same experimental condition, magnitude increased input current increase follow by increasing proportion of input current.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.25 no.1B
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• pp.175-182
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• 2000

(A hybrid-type wireless infrared data communication module was fabricated by using the light emitting andabsorption diodes with the one-chip of integrated digital circuits. The light emitting diode with the peak spectrum of 850 nm was made from compound semiconductor material of AIGaAs and shows high speed signal transmission with the delay time of 60 nsec for the light direction angle of 30". The Si PIN photodiode showsthe good absorption rate for the range of wavelength of 450-1050 nm and convex-type epoxy lens was utilized for the spectrum filtering on the visible-range spectrum below 750 nm, The data transmission speed is 115.2 kbps and the fabricated module satisfies on the IrDA 1.0 SIR standard requirements.)ments.)

• Proceedings of the KIEE Conference
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• 2004.07c
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• pp.2003-2005
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• 2004

본 논문에서는 패러데이 효과(Faraday effect)를 이용하여 초고압 전력설비에서 대전류 측정을 위한 광CT의 온도변화에 따른 특성에 대한 기초 연구를 하였다. 광원으로는 1310[nm] Laser Diode를 사용하고 수신부로는 PIN-Photodiode를 사용하였다. 실험을 위한 온도변환장치는 GIS와 같은 모양으로 재철은 알루미늄으로서 제작하였다. 광의 전송로는 파이버 내에서 편광상태를 유지할 수 있는 30[m]의 싱글모드 언재킷(unjacked) 파이버를 사용하였다. 전류의 측정은 400[A]에서 1300[A] 까지의 범위에서 측정하였으며 온도는 -40[$^{\circ}$]에서 50[$^{\circ}$]까지 10[$^{\circ}$]씩 증가시키면서 측정하였다. 이 때 출력선호는 인가전류의 중가에 따라 비례하여 증가하였으며 주변온도가 높을수록 비례하여 증가하였다.

• Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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• 2002.11a
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• pp.229-232
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• 2002

In this paper, we described the laboratory layout of the optical CT in connection with the measurement of large current for the GIS. The aim of this study is the development and application of optical CT based on Faraday effect. It was used He-Ne laser for light source (633nm) and was used PIN-Photodiode for light receiver. The laser source passes through optical fiber in single mode. We used the polarizer to polarize the light source and the beam splitter to divide the output light, and the optical fiber is connected for the measuring the angle polarized in the magnetic field.

• Proceedings of the KIEE Conference
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• 2008.07a
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• pp.1430-1431
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• 2008

In this paper, a optical current transformer has been designed and favricated to improve temperature stability caused materials properties and insulation in measuring system, suing single crystal as faraday effect cells. We used 850[nm] Laser diode as the light source and PIN Photodiode as receiver. For the experiment, the temperature transformation device make by aluminum. The range of current was from 0[A]$\sim$1600[A] and the range of temperature was from -20[$^{\circ}C$] to 50[$^{\circ}C$]. In a same experimental condition magnitude increased input current increase follow by increasing proportion of input current. The result of this study shows that characteristics of OCT are good, and it can be reflected for practical optical sensors.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.65 no.3
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• pp.452-456
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• 2016

In this paper, a dual-channel readout amplifier array is realized in a standard $0.18{\mu}m$ CMOS technology for the applications of panoramic scan LADAR systems. Each channel consists of a PIN photodiode with 0.9 A/W responsivity and a 1.0 Gb/s readout amplifier(ROA). The proposed ROA shares the basic configuration of the previously reported feedforward TIA, except that it exploits a replica input to exclude a low pass filter(LPF), thus reducing chip area and improving integration level, and to efficiently reject common-mode noises. Measured results demonstrate that each channel achieves $70dB{\Omega}$ transimpedance gain, 829 MHz bandwidth, -22 dBm sensitivity for $10^{-9}BER$, -34 dB crosstalk between adjacent channels, and 45 mW power dissipation from a single 1.8 V supply.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.35 no.9
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• pp.375-379
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• 1986

The HCP(Hypocycloidal Pinch) device for plasma focus was modified for a pumping source of the dye laser, and the spectral distribution and time behavior of its light pulses were investigated by using a UV spectrometer, 70 MHz CRO and Si-PIN photodiode detector. An array of multiple stages of HCP and narrower electrode gaps were chosen in order to make a more uniform discharge along the HCP axis. The possible spectral range for the pumping of dye laser is 360-620nm, when the HCP is operated at 5-8kv of apllied voltage and 50-150Torr of Ar fill gas pressure. The rise-time and FWHM of light pulses from the HCP are 5us and 30-50us respectively when it is operated under the same conditions as above.