• Proceedings of the Korean Institute of Communication Sciences Conference
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• 2004.07a
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• pp.83-83
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• 2004

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.21 no.7
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• pp.769-777
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• 2010

In this paper, a switchable circularly polarized microstrip patch antenna using PIN diodes and corner slots on ground plane is proposed at 2.4 GHz. The proposed antenna has a square microstrip patch and ground plane that consists of two pair of slots and PIN diodes. The electrical lengths of the slots are adjusted by using the switching characteristic of the PIN diode, so the polarization of the proposed antenna can be switchable between linear, left-handed(LH) and right-handed(RH). By separating the ground plane for the DC bias, the size reduction effect is also obtained. When the proposed antenna is operated as linear polarization, the return loss and impedance bandwidth are 15 dB, 59 MHz, and when operated as LH and RH polarization, the minimum axial ratio and 3-dB axial ratio bandwidth are 1.17 dB, 1.67 dB, 28 MHz, and 32 MHz, respectively.

• Proceedings of the KIEE Conference
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• 2000.11d
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• pp.754-757
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• 2000

Si PIN diodes are subject to be damaged from the exposure of fast neutron by displacement of Si lattice structure. The defects are effective recombination centers for carriers which migrate through the base region of the PIN diode when forward voltage is applied. It causes an increase in current and a decrease in resistivity of the diode. This paper presents the development of a neutron sensor based on displacement damage effect. PIN diodes having various structures were made by micro-fabrication process, and neutron beam test was performed to identify neutron damage effect to the diode. From a result of the test, it was shown that the forward voltage drop of the diode, at a constant current, has good linearity for neutron dosage. Also it was found that the newton dosage can be measured by the pin diode neutron dosimeter with constant current power.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.14 no.2
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• pp.127-132
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• 2003

This paper presents a new model that can precisely simulate the attenuation characteristics of the voltage-controlled PIN diode attenuators. After carefully investigating the problems in the conventional PIN diode models, a new PIN diode model was proposed and verified with experimental data. The proposed model is well operated when it is used in the voltage-controlled mode as well as current-controlled mode, and is simple and straightforward model, since the PN junction diode of this model has the same curve as that of the PIN diode. This model is very effective to design voltage-controlled attenuator and its implementation in commercial simulators is simple and accurate. This model will allow RF and Microwave designers to better use the PIN diodes in various circuits.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.24 no.5
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• pp.492-501
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• 2013

In this paper, a multi polarization reconfigurable microstrip antenna that can be used selectively for four polarizations(vertical polarization, horizontal polarization, right hand circular polarization, left hand circular polarization) at the S-band is presented. The proposed antenna consists of four PIN diodes and a microstrip patch with a cross slot and a circular slot and is fed by utiliting electromagnetic coupling between the microstrip patch and the feed line. The proposed antenna has a DC bias network to supply DC voltage to each PIN diode and the polarization can be determined by controlling the ON /OFF states of four PIN diodes. The fabricated antenna has a VSWR below 2 in the vertical polarization(3.17~3.21 GHz), the horizontal polarization(3.16~3.20 GHz), the left hand circular polarization (3.08~3.19 GHz), and the right hand circular polarization(3.10~3.2 GHz) frequency bands. The designed antenna has the cross polarization level higher than 20 dB, a gain over 5 dBi for the linear polarization states, and 3 dB axial ratio bandwidth wider than 50 MHz in the circular polarization states.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.16 no.2 s.93
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• pp.167-173
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• 2005

The isolation of the series PIN diode switch is restricted by the parallel capacitance of PIN diode and the switch driver circuit limits switching speed of PIN diode switch. To overcome these problems, a high isolation and high switching speed Pin diode switch is proposed adapting the parallel resonant inductance and TTL compatible switch driver circuit. The measurement results of the 3 GHz PM diode switch show 1 GHz frequency band, less than 1.5 dB insertion loss, 65 dB isolation, more than 15 dB return loss and less than 30 ns switching speed. In particular the 3 GHz PIN diode switch using the parallel resonant inductance exhibits the improvement of isolation by 15 dB.

• Journal of electromagnetic engineering and science
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• v.18 no.4
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• pp.215-220
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• 2018

This study presents a dual-band polarization-reconfigurable antenna that comprises a large square patch with a pair of corner-cut edges and two small square patches with a shorting via. Two PIN diodes are located between the large square patch and two small square patches. Depending on the bias state applied to the two PIN diodes, each small patch may be disconnected or connected to the large square patch. As a result, the proposed antenna can provide polarization reconfigurability between two orthogonal linear polarizations. Further, the proposed antenna operates at 2.51 GHz and 2.71 GHz. From the measured results, the proposed antenna shows a 10 dB bandwidth of 2.39% (2.49-2.55 GHz) and 2.58% (2.68-2.75 GHz). In this work, the frequency ratio can be easily controlled by changing the size of the small patch.

• ETRI Journal
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• v.32 no.3
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• pp.468-471
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• 2010

A compact square patch antenna with reconfigurable circular polarization (CP) at 2.4 GHz is proposed. Circular polarization is generated by an arc-shaped slot on the ground plane. In order to switch the CP orientation, the current flow direction of the patch is reconfigured via the PIN diodes mounted on the slot. As the slot and bias circuit are not placed on the patch side, the proposed antenna radiates a CP wave without alteration in the main beam direction. From the experimental results, the impedance and CP bandwidths of the proposed antenna have been demonstrated for up to 80 MHz and 25 MHz, respectively.

• Journal of Sensor Science and Technology
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• v.23 no.2
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• pp.73-81
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• 2014

Silicon PIN diode radiation sensors and CMOS readout circuits were designed and fabricated in this study. The PIN diodes were fabricated using a 380-${\mu}m$-thick 4-inch n+ Si (111) wafer containing a $2-k{\Omega}{\cdot}cm$ n- thin epitaxial layer. CMOS readout circuits employed the driving and signal processes in a radiation sensor were mixed with digital logic and analog input circuits. The primary functions of readout circuits are amplification of sensor signals and the generation of the alarm signals when radiation events occur. The radiation sensors and CMOS readout circuits were fabricated in the Institute of Semiconductor Fusion Technology (ISFT) semiconductor fabrication facilities located in Kyungpook National University. The performance of the readout circuit combined with the Si PIN diode sensor was demonstrated.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.17 no.6 s.109
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• pp.556-561
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• 2006

In this paper, a frequency reconfigurable slot antenna which has a bandwidth-enhanced characteristic is proposed. The proposed antenna consists of two parts; the wide slot and the narrow slot, to increase the bandwidth of the antenna and have the frequency reconfigurable characteristic. The wide slot has triangular shape and makes the bandwidth increased, and the narrow slot can mount PIN diodes. By changing on/off state of PIN diodes, the total length of the slot is changed. From this characteristic, the proposed antenna can finally control the center frequency and minimize variation of the impedance matching.