• Journal of Advanced Marine Engineering and Technology
• /
• v.39 no.1
• /
• pp.63-67
• /
• 2015

White light-emitting diode (WLED) is growing interest in using both illumination and communications. This paper reports visible light communication (VLC) composed of a super bright white light-emitting diode, low cost commercial photo-diode and a Fresnel lens. LED driver is consisted of the power MOSFET and MOSFET driver that switches the LED on and off. The modulation bandwidth of the LED used was determined to be 8 MHz. However, it was possible to communicate up to 1 Mbps under illumination of 500 lx because of the weak signal power and a low spectral sensitivity of the SHF213 as a PIN photodiode. In order to enhance the system bandwidth, the LED light was focused on the PIN photodiode by use of the Fresnel lens. As a result of that, visible light link was operated up to modulation bandwidth of the LED. The signal to noise ratio can be improved by 40 dB using an optical concentration at the receiver.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.25 no.1
• /
• pp.1-9
• /
• 2014

In this paper, a reconfigurable polarization patch antenna that uses a Y-shaped feed is proposed. The proposed antenna consists of a square patch, a Y-shaped feeding structure, a PIN diode, and a bias circuit for diode operation. The structural symmetry/asymmetry of the feeding structure is determined by the on/off operation of the PIN diode that inserted into the side of one of the lines of the Y-shaped feeding structure. For the proposed reconfigurable antenna, the two microstrip lines of the feeding structure have the same length when the PIN diode operates in the on state, and the antenna exhibits linear polarization(LP). On the other hand, when the PIN diode operates in the off state, the length of one side line of the feeding structure is relatively shorter than that of the other line. Therefore, the antenna exhibits circular polarization(CP). From the measurement results, it is found that the proposed antenna exhibits good impedance matching and axial ratio. In addition, polarization switching can be easily achieved in the same operating band.

• Proceedings of the KIEE Conference
• /
• 2003.11c
• /
• pp.793-796
• /
• 2003

The electronics of a mobile robot ill nuclear facilities is required to satisfied the reliability to sustain survival in its radiation environment. To know how much radiation the robot has been encountered to replace sensitive electronic parts, a dosimeter to measure total accumulated dose is necessary. Among many radiation dosimeters or detectors, semiconductor radiation sensors have advantages in terms of power requirements and their sires over conventional detectors. This paper describes the use of the radiation-induced threshold voltage change of a commercial power pMOSFET as an accumulated radiation dose monitoring mean and that of the photo-current of a commercial PIN Diode as a dose-rate measurement mean. Commercial p-type power MOSFETs and PIN Diodes were tested in a Co-60 gamma irradiation facility to see their capabilities as radiation sensors. We found an inexpensive commercial power pMOSFET that shows good linearity in their threshold voltage shift with radiation dose and a PIN diode that shows good linearity in its photo-current change with dose-rate. According to these findings, a radiation hardened hybrid electronic radiation dosimeter for nuclear robots has been developed for the first time. This small hybrid dosimeter has also an advantage in the point of view of reliability improvement by using a diversity concept.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.13 no.5
• /
• pp.451-458
• /
• 2002

Absorptive type SP3T(Single Pole Three Throw) and SP8T switch modules over the 6-18 GHz are designed and fabricated. The epitaxial structure of GaAs PIN diode for switch modules are designed for low loss and high power capability. The maximum input power of SP3T and SP8T switch modules are 2 W and 1 W, respectively. The switching time with driver circuit is less than 130 nsec. The maximum insertion loss of SP3T switch module and SP8T module shows 2.8 dB and 4.2 dB, respectively. The isolation between input port and output port is more than 55 dB. Two switch modules for electronic warfare system have passed the environment tests of the related test items.

• Journal of electromagnetic engineering and science
• /
• v.9 no.3
• /
• pp.159-163
• /
• 2009

This paper presents the design and implementation of Q-band MMIC phase shifters using InGaAs PIN diodes. The topology using a thin-film microstrip line(TFMS) has been proposed to achieve the desired phase-shift as well as good loss characteristics. Five single-bit MMIC phase shifters have been implemented by using a developed BCB(benzocyclobutene)-based multi-layer fabrication technology. The developed phase shifters have less than 3.4 dB of insertion loss and better than 11 dB of input and output return loss in the frequency range of 43 to 47 GHz. To the authors' knowledge, this is the first demonstration of high-performance InGaAs PIN diode-based MMIC phase shifters operating at Q-band frequencies.

• Journal of the Institute of Electronics Engineers of Korea TC
• /
• v.41 no.2
• /
• pp.53-58
• /
• 2004

In this paper, the low-phase dual-band VCO, by adding switching circuit with PIN diode at feedback loop of the oscillation part having negative-resistance, is realized. In order to reduce the phase noise of the VCO, PBG structure applied to the ground plane of the resonator. When applying for PBG structure, output power is -9.17㏈m and phase noise is -102㏈c/Hz at 5.25㎓, output power is -5.17㏈m and phase noise is -101㏈c/Hz at 1.8㎓, respectively.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2007.08b
• /
• pp.1319-1322
• /
• 2007

Planar PIN photodiode is compatible with LTPS process, and its fabrication requires no additional manufacturing process. In this study we design the optimum dimension of PIN diodes with two nitride layers to improve the efficiency of PIN diodes. The PIN photo sensor shows very good sensitivity to ambient light illuminance.

• Journal of Radiation Protection and Research
• /
• v.25 no.4
• /
• pp.197-205
• /
• 2000

A prototype electronic dosimeter(PED) adopting a silicon PIN diode detector as a radiation detector has been developed, manufactured and test-evaluated. A radiation signal processing circuit has been electronically tested and then the radiation detection characteristics of this PED has been performance-tested by using a reference photon radiation field. As a result in a electronic performance test, radiation signals from a detector were well observed in the signal processing circuit. The radiation detection sensitivity of this PED after several test-irradiations to $^{137}Cs$ gamma radiation source appeared to be 1.85 cps/$Gy{\cdot}h^{-1}$ with 19.3% of the coefficient of variation, which satisfied the performance criteria for the active personnel radiation monitor. Further improvement of the electronic circuit and operating program will enable the PED to be used in personal monitoring purpose.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.23 no.9
• /
• pp.1065-1072
• /
• 2012

In this paper, the method of design of the waveguide band-pass filter and limiter in radar system is proposed. First, we design a self-resonant iris, which can behave as a band-pass filter by mounting the PIN diode on the iris. When low power microwave is incident on the proposed element, the element behaves as a band-pass filter. Under a high power microwave condition, however, the element behaves as a limiter having wide band stop characteristics. The fabricated element has a pass band with -0.7 dB insertion loss at 10 GHz under the low power condition and isolation about 25 dB under the high power condition.

• Journal of Advanced Navigation Technology
• /
• v.13 no.3
• /
• pp.399-405
• /
• 2009

This paper proposes a design of attenuator based on meta-material structure and its application. The unit-cell attenuator based on the lossy transmission line consists of the CRLH(Composite Right/Left Handed) transmission line and PIN diodes to be controlled internal loss according to diode bias voltage to change resistance of diode. Also, to reduce the initial losses, there is used parallel connection of PIN diodes. To increase attenuations, it is connected a cascade unit-cell of attenuator with periodic structure. The attenuation quantities of unit-cell are about 10dB and phase variations are 15o maximum at 1.5 GHz ~ 2.5 GHz. Also, its application is represented a vector modulator.