• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.16 no.2 s.93
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• pp.167-173
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• 2005

The isolation of the series PIN diode switch is restricted by the parallel capacitance of PIN diode and the switch driver circuit limits switching speed of PIN diode switch. To overcome these problems, a high isolation and high switching speed Pin diode switch is proposed adapting the parallel resonant inductance and TTL compatible switch driver circuit. The measurement results of the 3 GHz PM diode switch show 1 GHz frequency band, less than 1.5 dB insertion loss, 65 dB isolation, more than 15 dB return loss and less than 30 ns switching speed. In particular the 3 GHz PIN diode switch using the parallel resonant inductance exhibits the improvement of isolation by 15 dB.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.45 no.11
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• pp.55-60
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• 2008

This paper proposed a dual-band RF switch using a Composite Right/Left Handed transmission line(CRLH TL) and PIN diode. RF switch is usually consist of $\lambda/4$ Right Handed transmission line(RH TL) and PIN diode. The dual band characteristics of RF switch was achieved by using CRLH transmission line instead of RH transmission line. CRLH Open-Stub was designed for resolve to reduction of isolation due to Package Inductance of PIN diode. The proposed RF switch was designed at GSM and DCS frequency-band. The measurement results showed a good agreement with theoretical result.

• The Journal of the Korea institute of electronic communication sciences
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• v.13 no.5
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• pp.971-978
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• 2018

This paper deals with the design and implementation of a limiter, which is a key component of the Ku-band radar system. The limiter design with the multi-pin diode switch was complemented by wideband signal attenuation, and realized the physical implementation. In the test result of implemented limiter, when the pin diode switch is all off, it is possible to transmit the incoming signal without distortion. Also when the pin diode switch is turned on sequentially, the input signal is attenuated about 20dB or more step by step. Finally when all of them were turned on, attenuation about 50dB or more were measured for a wide bandwidth(1000MHz) in Ku-band.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.18 no.4 s.119
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• pp.364-371
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• 2007

In this paper, the design and implementation of high-power PIN diode switch modules and high-speed switch driver circuits are presented for Wibro base stations. To prevent isolation degradation due to parasitic inductances of conventional packaged PIN diodes and to improve power handling capabilities of the switch modules, bare diode chips are used and carefully placed in a PCB layout, which makes bonding wire inductances to be absorbed in the impedance of a transmission line. The switch module is designed and implemented to have a maximum performance while using a minimum number of the diodes. It shows an insertion loss of ${\sim}0.84\;dB$ and isolation of 80 dB or more at 2.35 GHz. The switch driver circuit is also fabricated and measured to have a switching speed of ${\sim}200\;nsec$. The power handling capability test demonstrates that the module operates normally even under a digitally modulated 70 W RF signal stress.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.13 no.5
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• pp.451-458
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• 2002

Absorptive type SP3T(Single Pole Three Throw) and SP8T switch modules over the 6-18 GHz are designed and fabricated. The epitaxial structure of GaAs PIN diode for switch modules are designed for low loss and high power capability. The maximum input power of SP3T and SP8T switch modules are 2 W and 1 W, respectively. The switching time with driver circuit is less than 130 nsec. The maximum insertion loss of SP3T switch module and SP8T module shows 2.8 dB and 4.2 dB, respectively. The isolation between input port and output port is more than 55 dB. Two switch modules for electronic warfare system have passed the environment tests of the related test items.

• ETRI Journal
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• v.28 no.1
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• pp.84-86
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• 2006

This letter presents a small-sized, high-power single-pole double-throw (SPDT) switch with defected ground structure (DGS) for wireless broadband Internet application. To reduce the circuit size by using a slow-wave characteristic, the DGS is used for the quarter-wave (${\lambda}$/4) transmission line of the switch. To secure a high degree of isolation, the switch with DGS is composed of shunt-connected PIN diodes. It shows an insertion loss of 0.8 dB, an isolation of 50 dB or more, and power capability of at least 50 W at 2.3 GHz. The switch shows very similar performance to the conventional shunt-type switch, but the circuit size is reduced by about 50% simply with the use of DGS patterns.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.16 no.10 s.101
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• pp.1003-1009
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• 2005

In this paper, small-size high-power single pole double throw(SPDT) switch with defected pound structure(DGS) is presented for wireless broadband internet application. To reduce the circuit size using slow-wave characteristic, the DGS is applied to ${\lambda}/4$ transmission line of the switch and the measured results are compared with them of conventional switch. To secure high degree of isolation, the switch with the DGS is composed of shunt-connected PIN diodes and shows insertion loss of 0.8 dB and isolation more than 50 dB at 2.3 GHz. The size of the switch is reduced about $50\%$ only with the DGS patterns while it has very similar performance to the conventional shunt-type switch.

• Proceedings of the Korea Electromagnetic Engineering Society Conference
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• 2002.11a
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• pp.352-355
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• 2002

본 논문에서는 series-shunt type의 PIN diode를 사용하여 8 ㎓ (7.7㎓ - 8.3㎓) 에서 사용 가능한 switch를 설계 제작하였다 스위치의 중요한 사양인 격리도 (-50㏈ 미만) 삽입손실(-1.5㏈ 미만) 입력전력 허용치 (평균전력 0.5 watt 이상 ) 입출력 정재파비 (1.3:1) 등을 고려하여 설계하였으며, 제작은 인텍웨이브사의 알루미나 기판을 이용한 thin film 공정을 이용하였으며, 측정 또한 이 네 가지에 중점을 두었다. 격리도는 중심 주파수 근방에서 비교적 넓은 대역을 가지고 -50㏈ 미만이었으며, 삽입손실은 -1.3㏈-1.6㏈였다. 입출력 정재파비는 1 -1.4였다.

• Journal of the Semiconductor & Display Technology
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• v.6 no.2 s.19
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• pp.49-52
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• 2007

Characteristics of an active pixel switch readout circuit were studied by SPICE simulation. A simple readout circuit consists of an operation amplifier, a diode, and a down-counter was suggested, and its successful operation was verified by showing that the differences in the detected signal intensity are accordingly converted to modulation of the voltage pulses generated by the comparator. A scheme to use these pulses to generate the original image was also put forward.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.19 no.9
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• pp.992-999
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• 2008

This paper describes the design of SPST PIN diode switch which has a 2 kW high power handling capability within $50{\mu}s$ switching speed in $20{\sim}100$ MHz VHF-band. Design factors were investigated and it was confirmed by simulation that the characteristics of insertion loss, VSWR, and isolation met design goal. Also, the capability to handle 2 kW high power with maximum fast switching speed less than $20{\mu}s$ was confirmed and insertion loss less than 0.2 dB, VSWR less than 1.17:1, and isolation higher than 40 dB were obtained by experiments.