• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.11
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• pp.707-711
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• 2016

ITO/Ag/ITO conductive films on PET (polyethylene terephthalate) was etched by a Q-switched diode-pumped neodymiun-doped yttrium vanadate (Nd:YVO4, ${\lambda}=1064nm$) laser. During the laser direct etching, the laser beam was incident on the two different directions of PET and the etching patterns were investigated and analyzed. At a lower repetition rate of laser pulse, the larger laser etched patterns were obtained by laser beam incident on reverse side of PET substrate. On the contrary, at a higher repetition rate, it was possible to find the larger etched patterns in case of the laser beam incidence on forward side of PET substrate. For the laser beam incidence on reverse side, the laser beam is expected to be transferred and scattered through the PET substrate and the laser beam energy is thought to be dependent on the etch laser pulse beam energy.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2000.11a
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• pp.46-46
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• 2000

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.316-316
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• 2008

Using an evaporation method, $SiO_2$ was deposited as a buffer layer between a flexible PET substrate and a ITO film deposited by DC magnetron sputtering and electro-optical properties were investigated with thickness variance of $SiO_2$ layers. After coating a $SiO_2$ layer and a ITO film, the ITO/$SiO_2$/PET was heated up to $200^{\circ}C$ and the resistivity and the transmittance were measured by hall effect measurement system and UV/VIS/NIR spectroscopy. As a result of depositing a $SiO_2$ buffer layer, the resistivity increased and the transmittance and adhesion property were enhanced than ITO films with no buffer layers and the resistivity was lowered as $SiO_2$ thickness increased from 50 $\AA$ to 100 $\AA$. It was found that the transmittance was independent of annealing temperature variance in $150^{\circ}C{\sim}200^{\circ}C$ and the resistivity decreased as the temperature increased and especially decreasing rate of the resistivity was higher as the buffer layer thickness was thinner. So under optimized depositing of $SiO_2$ buffer layers and post-annealing of ITO/$SiO_2$/PET, ITO films with enhanced adhesion, electro-optical properties can obtained.

• Korean Journal of Materials Research
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• v.24 no.4
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• pp.207-213
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• 2014

Flexible $BaTiO_3$ films as dielectric materials for high energy density capacitors were deposited on polyethylene terephthalate (PET) substrates by r.f. magnetron sputtering. The growth behavior, microstructure and electrical properties of the flexible $BaTiO_3$ films were dependent on the sputtering pressure during sputtering. The RMS roughness and crystallite size of the $BaTiO_3$ increased with increasing sputtering pressure. All $BaTiO_3$ films had an amorphous structure, regardless of the sputtering pressures, due to the low PET substrate temperature. The composition of films showed an atomic ratio (Ba:Ti:O) of 0.9:1.1:3. The electrical properties of the $BaTiO_3$ films were affected by the microstructure and roughness. The $BaTiO_3$ films prepared at 100 mTorr exhibited a dielectric constant of ~80 at 1 kHz and a leakage current of $10^{-8}A$ at 400 kV/cm. Also, films showed polarization of $8{\mu}C/cm^2$ at 100 kV/cm and remnant polarization ($P_r$) of $2{\mu}C/cm^2$. This suggests that sputter deposited flexible $BaTiO_3$ films are a promising dielectric that can be used in high energy density capacitors owing to their high dielectric constant, low leakage current and stable preparation by sputtering.

• Journal of the Korean Applied Science and Technology
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• v.31 no.4
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• pp.584-594
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• 2014

To increase of surface hydrophilicity of polymeric thin films is an important approaching technique for introduction of self-cleaning and/or antifogging properties on the surfaces of those films. In general, hydrophilic surface can be produced by coating non ionic surfactants or by increasing surface energy. Various non-ionic surfactants, such as Tween, Span, and PEG-PPG block copolymers were selected for our experiments, because they are cheap and well soluble in toluene system as well as they contain several reactive hydroxy fuctional groups with coupling agents. Blending conditions influence the PET film surface hydrophilicities. However, the introduction of only these surfactants on the surface of PET films did not show the high durability of hydrophilic properties after washing with water. To improve the durability two types of coupling agents such as epoxide and diisocyanate were adopted. Contact angle of water on hydrophilically coated PET film surface with 6 wt% of isophrone diisocyanate(IPDI) containing coating solution was reached to $8.7^{\circ}$, which was an indirect evidence for very high surface hydrophilicity. A light(500 nm of wavelength) transmittance value of coated PET film was changed only from 87% to 85% with keeping a good transparent property. This film can be usable for self-cleaning film industries.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.2
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• pp.126-130
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• 2011

In this study, off-axis magnetron sputtering was used for the crystallized ITO thin films at a low temperature of about $120^{\circ}C$ instead of the conventional RF sputtering because the off-axis sputtering can avoid the damage for the plasma as well as fabrication of thin films with a high quality. The ITO thin films grown on PET substrate at $120^{\circ}C$ were crystallized with a (222) preferred orientation. 58-nm thick ITO films showed a resistivity of about $2{\times}10-4{\Omega}{\cdot}cm$ and a transmittance of about 75% at a wavelength of 550 nm. The transmittance of the ITO thin films by an insertion of SiO2 thin films on ITO films was improved.

• Polymer(Korea)
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• v.34 no.6
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• pp.579-587
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• 2010

To investigate the properties of PET films, PET films were extruded at various temperature above $T_m$ and quenched at $18^{\circ}C$ for amorphous sheet, and stretched along a direction defined as the machine direction (MD) with a transverse direction (TD) above $T_g$ at various stretching ratios and then annealed at various temperatures produced by SKC PET line. Thermal shrinkage of MD and TD increased with decreasing annealing temperature and extruding temperature, and increasing stretching ratio. The degree of crystallinity, density, heat of fusion (${\Delta}H$) and pre-melting point ($T_m'$) increased with increasing annealing temperature and extruding temperature. Number average molecular weight ($M_n$) and intrinsic viscosity decreased with increasing extruding temperature. Tensile strength and modulus increased with increasing stretching ratio, however decreased with increasing annealing temperature. Reflective index of both stretching and thickness direction increased with increasing stretching ratio and annealing temperature.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.10a
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• pp.43.2-43.2
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• 2011

Single-walled carbon nanotubes (SWCNT) are transparent in the visible and show conductivity comparable to copper, and are environmentally stable. SWCNT films have high flexibility, conductivity and transparency approaching that indium tin oxide (ITO), and can be prepared inexpensively without vacuum equipment. Transparent conducting Films (TCF) of SWCNTs has the potential to replace conventional transparent conducting oxides (TCO, e.g. ITO) in a wide variety of optoelectronic devices, energy conversion and photovoltaic industry. However, the sheet resistance of SWCNT films is still higher than ITO films. A decreased in the resistivity of SWCNT-TCFs would be beneficial for such an application. We fabricated SWCNT sheet with $KAuBr_4$ on PET substrate. Arc-discharge SWCNTs were dispersed in deionized water by adding sodum dodecyl sulfate (SDS) as surfactant and sonicated, followed by the centrifugation. The dispersed SWCNT was spray-coated on PET substrate and dried on a hotplate at $100^{\circ}C$. When the spray process was terminated, the TCF was immersed into deionized water to remove the surfactant and then it was dried on hotplate. The TCF film was then treated with AuBr4-, rinsed with deionized water and dried. The surface morphology of TCF was characterized by field emission scanning electron microscopy. The sheet resistance and optical transmission properties of the TCF were measured with a four-point probe method and a UV-visible spectrometry, respectively. $HNO_3$ treated SWCNT films with Au nano-particles have the lowest 61 ${\Omega}$/< sheet resistance in the 80% transmittance. Sheet resistance was decreased due to the increase of the hole concentration at the washed SWCNT surface by p-type doping of $AuBr_4{^-}$.

• Korean Journal of Materials Research
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• v.19 no.7
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• pp.376-381
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• 2009

Indium Tin Oxide (ITO) thin films on Polyethylene Terephtalate (PET) substrate were prepared by Roll-to-Roll sputter system with targets of 5 wt% and 10 wt% $SnO_2$ at room temperature. The influence of the chromaticity (b*) and transmittance properties of the ITO Films were investigated. The ITO thin films were deposited as a function of the DC power, rolling speed, and Ar/$O_2$ gas flow ratio, and then characterized by spectrophotometer. Their crystallinity and surface resistance were also analyzed by X-ray diffractometer and 4-point probe. As a result, the chromaticity (b*) and transmittance of the ITO films were broadly dependent on the thickness, which was controlled by the rolling speed. When the ITO films were prepared with the DC power of 300 W and the Ar/$O_2$ gas flow ratio of 30/1 sccm using 10 wt% $SnO_2$ target as a function of the rolling speeds 0.01 through 0.10 m/min, its chromaticity (b*) and transmittance were about -4.01 to 11.28 and 75.76 to 86.60%, respectively. In addition, when the ITO films were deposited with the DC power of 400W and the Ar/$O_2$ gas flow ratio of 30/2 sccm used in 5 wt% $SnO_2$ target, its chromaticity (b*) and transmittance were about -2.98 to 14.22 and 74.29 to 88.52%, respectively.

• Korean Journal of Materials Research
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• v.30 no.3
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• pp.105-110
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• 2020

Cu/PET composite films are widely used in a variety of wearable electronics. Lifetime of the electronics is determined by adhesion between the Cu film and the PET substrate. The formation of an anisotropic nanostructure on the PET surface by surface modification can enhance Cu/PET interfacial adhesion. The shape and size of the anisotropic nanostructures of the PET surface can be controlled by varying the surface modification conditions. In this work, the effect of Cu/PET interface nanostructures on the failure mechanism of a Cu/PET flexible composite film is studied. From observation of the morphologies of the anisotropic nanostructures on plasma-treated PET surfaces, and cross-sections and surfaces of the fractured specimens, the Cu/PET interface area and nanostructure width are analyzed and the failure mechanism of the Cu/PET film is investigated. It is found that the failure mechanism of the Cu/PET flexible composite film depends on the shape and size of the plasmatreated PET surface nanostructures. Cu/PET interface nanostructures with maximal peel strength exhibit multiple craze-crack propagation behavior, while smaller or larger interface nanostructures exhibit single-path craze-crack propagation behavior.