• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.12
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• pp.1134-1139
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• 2006

Electrical, optical, and structural properties of indium zinc oxide (IZO) anode films grown by a RF magnetron sputtering were investigated as functions of RF power and working pressure in pure Ar ambient. To investigate electrical, optical and structural properties of IZO anode films, 4-point probe and UV/VIS spectrometry, and X-ray diffraction (XRD) were performed, respectively. A sheet resistance of $15.2{\Omega}/{\square}$, average transmittance above 80 % in visible range, expecially above 85 % in 550 nm, and root mean square roughness of 1.13 nm were obtained from optimized IZO anode films grown in oxygen free ambient. All samples show amorphous structure regardless of RF power and working pressure due to low substrate temperature. In addition, XPS depth profile obtained from IZO/PES exhibits that there is no obvious evidence of interfacial reaction between IZO and PES substrate. Furthermore, current-voltage-luminance of the flexible phosphorescent flexible OLEDs fabricated on IZO anode shows dependence on sheet resistance of the IZO anode. These results indicate that the IZO anode is a promising candidate to substitute conventional ITO anode for high-quality flexible displays.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.211-211
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• 2010

본 논문에서는 ZnO 박막을 휘어지기 쉬운 PES(polyethersulfone) 기판위에 PLD(pusled laser deposition)법을 사용하여 다양한 조건에서 성장시켰다. 성장된 ZnO 박막의 표면 형상과 광특성을 SEM과 PL을 사용하여 측정하였고, 레이저 밀도 0.3 J/$cm^2$, 기판 온도 $200^{\circ}C$에서 가장 좋은 광특성을 보였다.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.1374-1377
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• 2005

Top-emitting organic light-emitting diode (TEOLED) was fabricated on flexible substrate of PES film. Aluminum and Chromium multilayer was used as an anode of TEOLED and the TEOLEDs of Cr(20nm)/Al(100nm)/Cr(20nm)/NPB(60nm)/Alq(60nm)/LiF(1nm)/Al(2nm)/Ag(20nm)/NPB(200nm) has been fabricated on PES film and Si wafer for control device. The TEOLED on PES film which had good anode surface morphology, showed very similar device characteristics to that on Si wafer.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07a
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• pp.269-271
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• 2005

Using optimized sputtering condition of a-Si and $SiO_2$ thin film, we can obtained the large grained poly-Si film on PES substrate. The gate dielectric grown by plasma enhanced atomic layer deposition, laser activation and organic interlayer dielectric material make TFTs on PES possible with mobility of $11cm^2/Vs$ (nMOS) and $7cm_2/Vs$ (pMOS).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.403-404
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• 2007

We prepared the Al doped ZnO (AZO) thin film on polyethersulfon (PES) without any substrate heating by Facing Targets Sputtering (FTS) system. ZnO doped the content of Al 2 wt% was used and the sputtering conditions were gas pressure 1mTorr and input power 100W. The electrical, structural and optical properties of AZO thin films were investigated. To investigate the as-deposited thin film properties, we employed four-point probe, UV/VIS spectrometer, X-ray diffractometer (XRD), scanning electron microscopy (SEM), Hall Effect measurement system and Atomic Force Microscope (AFM).

• Polymer(Korea)
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• v.36 no.3
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• pp.393-400
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• 2012

The characteristics of indium tin oxide (ITO) thin film deposited on polyethersulfone (PES) film by low temperature E beam has been studied for the flexible photovoltaic devices. It was found that the substrate temperature in the deposition process affected the crystallization behavior of ITO during the post low temperature annealing process. Higher substrate temperature resulted in the increase of crystallinity of annealed ITO. Consequently, the lowering of sheet resistivity and better transmittance were obtained. Crystallization of ITO during the annealing process was facilitated by using oxygen gas in the deposition process and resulted in the enhancement on sheet resistivity and transmittance of ITO. The surface roughness of PES film prohibited the crystallization of ITO during the annealing process and it caused the increase of sheet resistivity and the decrease of transmittance of ITO.

• Environmental Engineering Research
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• v.19 no.4
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• pp.339-344
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• 2014

Different types of polyethersulfone (PES) support layer for a thin film composite (TFC) membrane were synthesized under various synthesis conditions using the phase inversion method to study the combined effects of substrate, adhesive, and pore former. The permeability, selectivity, pore structure, and morphology of the prepared membranes were analyzed to evaluate the membrane performance. The combined use of substrate, adhesive, and pore former produced a thinner dense top layer, with more straight finger-like pores. The pure water permeation (PWP) of the optimized PES membrane was $27.42L/m^2hr$ (LMH), whereas that of bare PES membrane was 3.24 LMH. Moreover, membrane selectivity, represented as divalent ion ($CaSO_4$) rejection, was not sacrificed under the synthesis conditions, which produced the dramatically enhanced PWP. The high permeability and selectivity of the PES membrane produced under the optimized synthesis conditions suggest that it can be utilized as a potential support layer for TFC membranes.

• ETRI Journal
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• v.27 no.4
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• pp.405-410
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• 2005

High quality indium tin oxide (ITO) thin films were grown by pulse laser deposition (PLD) on flexible polyethersulphone (PES) substrates. The electrical, optical, and surface morphological properties of these films were examined as a function of substrate temperature and oxygen pressure. ITO thin films, deposited by PLD on a PES substrate at room temperature and an oxygen pressure of 15 mTorr, have a low electrical resistivity of $2.9{\times}10^{-4}{\Omega}cm$ and a high optical transmittance of 84 % in the visible range. They were used as the anode in organic light-emitting diodes (OLEDs). The maximum electro luminescence (EL) and current density at 100 $cd/m^2$ were 2500 $cd/m^{2}$ and 2 $mA/m^{2}$, respectively, and the external quantum efficiency of the OLEDs was found to be 2.0 %.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.19 no.6
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• pp.1393-1398
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• 2015

In this study, the electrical and optical properties of GZO (Ga-doped ZnO) thin films prepared on PES substrates by RF magnetron sputtering method with various working pressures (5 to 20 mTorr) were investigated. All GZO thin films exhibited c-axis preferential growth regardless of working pressure, the GZO thin film deposited at 5 mTorr showed the most excellent crystallinity having 0.44˚ of FWHM. In AFM observations, surface roughness exhibited the lowest value of 0.20 nm in a thin film produced by the working pressure 5 mTorr. Figure of merits of GZO thin film deposited at 5 mTorr showed the highest value of 6652, in this case resistivity and average transmittance in the visible light region were 6.93×10^-4Ω-cm and 81.4%, respectively. We could observed the Burstein-Moss effect that carrier concentration decrease with the increase of working pressure and thus the energy band gap is narrowed.

• Journal of Advanced Marine Engineering and Technology
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• v.38 no.3
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• pp.302-311
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• 2014

In this work, a FTTL (fishbone-type transmission line) structure was fabricated on PES (polyether sulfone) for a realization of transparent flexible wireless communication device, and its RF characteristics were investigated. According to the results, the FTTL on PES showed a short wavelength characteristic compared with conventional coplanar waveguide. Concretely, the wavelength of the FTTL was 2.23 mm at 50 GHz, which was 56.6 % of the conventional coplanar waveguide. According to the bandwidth extraction result, the passband of the FTTL on PES was 608 GHz. Unlike conventional periodic structures, the characteristic impedance of the FTTL on PES showed a very low frequency dependency, which means that the FTTL on PES can be used for application to transmission line and distributed passive components with a broadband operation frequency.