• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2000년도 제1회 학술대회 논문집
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• pp.175-176
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• 2000

Electric fields and the wall voltages in a surface-type AC PDP cell were measured using a Laser Induced Fluorescence Spectroscopy. For the condition of He 100Torr, 200V sustain voltage and 50kHz sustain frequency, the wall voltage dropped from about 50V to about -75V within $1{\mu}sec$ after the main discharge. And the wall voltage decreased with the rate of $10.8V/{\mu}sec$ due to the accumulation of the space charges after $1{\mu}sec$. But when the operating pressure was 40Torr, it increased with the rate of $4.5V/{\mu}sec$ because the diffusion effect of the wall charge on MgO surface was more dominant than the accumulation effect of the space charges. During the pulse-off period, the wall voltage decreased slightly due to the diffusion of the wall charge. When the sustain voltage was 250V, the self-erasing discharge occurred, and the absolute value of the wall voltage decreased rapidly just after the pulses were off, which was caused by the accumulation of the charges generated by the self-erasing discharge.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제52권10호
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• pp.476-480
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• 2003

In this paper, we have performed 3-dimensional time-resolving measurement of the Ne light emitted from the cell of plasma display panel(PDP) as a function of the pressure using the scanned point detecting system. From the temporal behavior results, we could analyze the discharge behavior of panel with Ne-Xe(4%) mixing gas and 300 torr, 400 torr and 500 torr pressure. At the top view of panel, the discharge of 300 torr panel starts at the 634 ns and ends at the 722 ns. The emission duration time is about 90 ns. The discharge of 400 torr panel starts at the 682 ns and ends at the 786 ns. the emission duration time is about 100 ns. Also, the discharge of 500 torr panel starts at the 770 ns and ends at the 826 ns. the emission duration time is about 56 ns. The discharge moves from inner edge of cathode electrode to outer cathode electrode forming arc type. In the side view of 300 torr, 400 torr and 500 torr an emission shows that the light is detected up to 180${\mu}{\textrm}{m}$, 150${\mu}{\textrm}{m}$ and 70${\mu}{\textrm}{m}$ height of barrier rib and the emission distribution of the 300 torr is wider than 400 torr, 500 torr.

• 반도체디스플레이기술학회지
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• 제6권3호
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• pp.35-39
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• 2007

ITO(Indium Tin Oxide) is the most attractive TCO(Transparent Conducting Oxide) materials for LCD, PDP, OLEDs and solar cell, because of their high optical transparency and electrical conductivity. However due to the shortage of indium resource, hard processing at low temperature, and decrease of optical property during hydrogen plasma treatment, their applications to the display industries are limited. Thus, recently the Al-doped ZnO(AZO) has been studied to substitute ITO. In this study, we have investigated the effect of different substrate temperature(RT, $150^{\circ}C$, $225^{\circ}C$, $300^{\circ}C$) and working pressure(10 mTorr, 20 mTorr, 30 mTorr, 80 mTorr) on the characteristics of AZO(2 wt.% Al, 98 wt.% ZnO) films deposited by RF-magnetron sputtering. We have obtained AZO thin films deposited at low temperature and all the deposited AZO thin films are grown as colunmar. The average transmittance in the visible wavelength region is over 80% for all the films and transmittance improved with increasing substrate temperature. Electrical properties of the AZO films improved with increasing substrate temperature.

• 공업화학
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• 제24권1호
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• pp.93-98
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• 2013

본 연구에서는 고온 고압반응을 통하여 4종의 전도성 고분자 poly[(N-butyl-phenothiazine)-sulfide] (PBPS), poly[(N-hexyl-phenothiazine)-sulfide] (PHPS), poly[(N-decyl-phenothiazine)-sulfide] (PDPS), poly[(N-(2-ethylhexyl)-phenothiazine)-sulfide] (PEHPS)를 합성하였다. 각 단계의 합성된 화합물의 구조는 $^1H-NMR$을 통하여 확인하였고, UV-Vis, cyclic voltammetry, GPC를 이용하여 합성된 고분자의 물성을 확인하였다. PBPS, PHPS, PDPS, PEHPS의 최대흡수파장은 각각 338, 341, 340, 334 nm이었으며, 각 고분자의 광학적 밴드 갭은 3.11, 3.13, 3.16, 3.05 eV이었다. 유기박막태양전지로서의 적용가능성을 확인하기 위해 합성된 고분자를 전자 받개 물질인 $PC_{71}BM$과 블렌딩하여 ITO/PEDOT : PSS/polymer (PBPS, PDPS) : $PC_{71}BM$ (1 : 3, w/w)/$BaF_2$/Ba/Al 구조의 소자를 제작하였고, solar simulator로 광전변환효율을 측정하였다. PBPS의 광전변환효율은 0.076%이었고, PDPS의 광전변환효율은 0.136%이었다.

• 한국산학기술학회논문지
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• 제13권11호
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• pp.5458-5464
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• 2012

상이한 망이 공존하는 LTE-Advanced에서 기존 음성 서비스에 적용된 절차적이고 정적인 제어방식으로는 서비스 연속성을 효과적으로 지원하는 것은 현실적으로 어렵다고 여겨진다. 본 연구에서는 QoS 지원을 기반으로 서비스 연속성을 효과적으로 지원하기 위한 자원 관리 프레임워크를 제시하고자 한다. 제안된 자원 관리 프레임워크는 이동 단말기 및 기지국의 상태 정보 변화에 따라 관련 기능-ISHO, 셀 선정, 자원 할당, 부하 제어, QoS 매핑 등-의 설정을 동적으로 제어하고, 각각의 기능들이 변화에 적응하여 조정되고 재구성하는 과정을 주고받으면서 서비스 연속성을 만족시키기 위하여 상호 작용한다. 이를 위하여 4 종류의 ISHO를 지원하기 위한 각 모듈간의 연계 순서도를 기술하고, ISHO 시나리오가 고려된다.

• 조명전기설비학회논문지
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• 제15권1호
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• pp.13-21
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• 2001

3전극 교류형 면방전 플라즈마 디스플레이의 방전특성을 분석하여 최대 방전전압에서 나타나는 방전의 불안정성은 2차방전에 의한 벽전하의 부분소거가 원임임을 알았다. 이를 이용하여 어드레스 방전과 표시방전의 상호관계를 고려한 동작마진을 새로이 정의하였고 실험을 통하여 이의 타당성을 검증하였다. 고속 어드레싱을 하기 위해서는 어드레스 펄스폭을 줄여야 한다. 그러나 어드레스 펄스폭이 좁아지면 어드레스 펄스의 동작마진이 줄어든다. 반면에 표시방전 유지펄스의 동작마진은 어드레스 펄스폭이 $1[{\mu}s]$ 이상만 되면 어드레스 펄스폭에 무관하다는 것을 알앗다. 시렇ㅁ결과 펄스폭 $1[{\mu}s]$의 고속 어드레스 ADS 구동방식으로 HDTV급 셀구조를 가지는 플라즈마 디스플레이 패널에 8bit 256계조의 화상을 구현 하였고 $560[cd/m^2]$의 휘도를 얻었다.

• Molecules and Cells
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• 제45권7호
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• pp.454-464
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• 2022

DJ-1 is one of the causative genes of early-onset familial Parkinson's disease (PD). As a result, DJ-1 influences the pathogenesis of sporadic PD. DJ-1 has various physiological functions that converge to control the levels of intracellular reactive oxygen species (ROS). Based on genetic analyses that sought to investigate novel antioxidant DJ-1 downstream genes, pyruvate dehydrogenase (PDH) kinase (PDK) was demonstrated to increase survival rates and decrease dopaminergic (DA) neuron loss in DJ-1 mutant flies under oxidative stress. PDK phosphorylates and inhibits the PDH complex (PDC), subsequently downregulating glucose metabolism in the mitochondria, which is a major source of intracellular ROS. A loss-of-function mutation in PDK was not found to have a significant effect on fly development and reproduction, but severely ameliorated oxidative stress resistance. Thus, PDK plays a critical role in the protection against oxidative stress. Loss of PDH phosphatase (PDP), which dephosphorylates and activates PDH, was also shown to protect DJ-1 mutants from oxidative stress, ultimately supporting our findings. Further genetic analyses suggested that DJ-1 controls PDK expression through hypoxia-inducible factor 1 (HIF-1), a transcriptional regulator of the adaptive response to hypoxia and oxidative stress. Furthermore, CPI-613, an inhibitor of PDH, protected DJ-1 null flies from oxidative stress, suggesting that the genetic and pharmacological inhibition of PDH may be a novel treatment strategy for PD associated with DJ-1 dysfunction.

• 농업과학연구
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• 제15권1호
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• pp.15-22
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• 1988

팽이버섯 원형질체(原形質體)의 재생(再生)과 환원(還元)에 영향(影響)을 미치는 요인(要因)에 대해 조사(調査)하였으며 영양요구성(營養要求性) 돌연변이(突然變異) 균주(菌株) 선발(選拔)을 실시(實施)하여 얻은 결과(結果)는 다음과 같다. 1. 원형질체(原形質體) 재생배지(再生培地)에 첨가(添加)되는 삼투압 조절제(調節劑)로는 0.6M의 sucrose가 가장 우수(優秀)하였고 재생률(再生率)은 0.47~1.32%로 나타났다. 재생용(再生用) 배지(培地)에 몇가지의 영양원(營養源)을 첨가(添加)하였을때 재생률(再生率)의 증가(增加)를 나타내었으며 특히 yeast extract가 팽이버섯의 원형질체(原形質體) 재생(再生)에 효과적(效果的)이었다. 2. 팽이버섯의 원형질체(原形質體) 재생(再生) 형태(形態)는 bud-like cells에서 germ tube가 발달(發達)하는 형태(形態)이었다. 환원(還元)된 균총중(菌叢中)에는 13~18%의 clamp connection을 형성(形成)하지 않는 monokaryon 균주(菌株)들이 발견(發見)되었다. 3. 자외선(U.V.L) 조사시(照射時) 팽이버섯의 포자생존률(胞子生存率)은 180사(砂)에서 16%였고 이때 5계통(系統)의 영양요구성(營養要求性) 균주(菌株)가 선발(選拔)되었다. 이들 중(中) 2균주(菌株)는 nucleic acid requiring strain이었고 3균주(菌株)는 vitamine requiring strain이었다.

• JSTS:Journal of Semiconductor Technology and Science
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• 제16권1호
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• pp.91-105
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• 2016

Carbon Nanotube Field-Effect Transistors (CNTFETs) have been studied as candidates for post Si CMOS owing to the better electrostatic control and high mobility. To enhance the immunity against short - channel effects (SCEs), the novel channel and gate engineered architectures have been proposed to improve CNTFETs performance. This work presents a comprehensive study of the influence of channel and gate engineering on the CNTFET switching, high frequency and circuit level performance of carbon nanotube field-effect transistors (CNTFETs). At device level, the effects of channel and gate engineering on the switching and high frequency characteristics for CNTFET have been theoretically investigated by using a quantum kinetic model. This model is based on two-dimensional non-equilibrium Green's functions (NEGF) solved self - consistently with Poisson's equations. It is revealed that hetero - material - gate and lightly doped drain and source CNTFET (HMG - LDDS - CNTFET) structure can significantly reduce leakage current, enhance control ability of the gate on channel, improve the switching speed, and is more suitable for use in low power, high frequency circuits. At circuit level, using the HSPICE with look - up table(LUT) based Verilog - A models, the impact of the channel and gate engineering on basic digital circuits (inverter, static random access memory cell) have been investigated systematically. The performance parameters of circuits have been calculated and the optimum metal gate workfunction combinations of ${\Phi}_{M1}/{\Phi}_{M2}$ have been concluded in terms of power consumption, average delay, stability, energy consumption and power - delay product (PDP). In addition, we discuss and compare the CNTFET-based circuit designs of various logic gates, including ternary and binary logic. Simulation results indicate that LDDS - HMG - CNTFET circuits with ternary logic gate design have significantly better performance in comparison with other structures.