• 한국정보디스플레이학회:학술대회논문집
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• 2000.01a
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• pp.175-176
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• 2000

Electric fields and the wall voltages in a surface-type AC PDP cell were measured using a Laser Induced Fluorescence Spectroscopy. For the condition of He 100Torr, 200V sustain voltage and 50kHz sustain frequency, the wall voltage dropped from about 50V to about -75V within $1{\mu}sec$ after the main discharge. And the wall voltage decreased with the rate of $10.8V/{\mu}sec$ due to the accumulation of the space charges after $1{\mu}sec$. But when the operating pressure was 40Torr, it increased with the rate of $4.5V/{\mu}sec$ because the diffusion effect of the wall charge on MgO surface was more dominant than the accumulation effect of the space charges. During the pulse-off period, the wall voltage decreased slightly due to the diffusion of the wall charge. When the sustain voltage was 250V, the self-erasing discharge occurred, and the absolute value of the wall voltage decreased rapidly just after the pulses were off, which was caused by the accumulation of the charges generated by the self-erasing discharge.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.52 no.10
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• pp.476-480
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• 2003

In this paper, we have performed 3-dimensional time-resolving measurement of the Ne light emitted from the cell of plasma display panel(PDP) as a function of the pressure using the scanned point detecting system. From the temporal behavior results, we could analyze the discharge behavior of panel with Ne-Xe(4%) mixing gas and 300 torr, 400 torr and 500 torr pressure. At the top view of panel, the discharge of 300 torr panel starts at the 634 ns and ends at the 722 ns. The emission duration time is about 90 ns. The discharge of 400 torr panel starts at the 682 ns and ends at the 786 ns. the emission duration time is about 100 ns. Also, the discharge of 500 torr panel starts at the 770 ns and ends at the 826 ns. the emission duration time is about 56 ns. The discharge moves from inner edge of cathode electrode to outer cathode electrode forming arc type. In the side view of 300 torr, 400 torr and 500 torr an emission shows that the light is detected up to 180${\mu}{\textrm}{m}$, 150${\mu}{\textrm}{m}$ and 70${\mu}{\textrm}{m}$ height of barrier rib and the emission distribution of the 300 torr is wider than 400 torr, 500 torr.

• Journal of the Semiconductor & Display Technology
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• v.6 no.3
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• pp.35-39
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• 2007

ITO(Indium Tin Oxide) is the most attractive TCO(Transparent Conducting Oxide) materials for LCD, PDP, OLEDs and solar cell, because of their high optical transparency and electrical conductivity. However due to the shortage of indium resource, hard processing at low temperature, and decrease of optical property during hydrogen plasma treatment, their applications to the display industries are limited. Thus, recently the Al-doped ZnO(AZO) has been studied to substitute ITO. In this study, we have investigated the effect of different substrate temperature(RT, $150^{\circ}C$, $225^{\circ}C$, $300^{\circ}C$) and working pressure(10 mTorr, 20 mTorr, 30 mTorr, 80 mTorr) on the characteristics of AZO(2 wt.% Al, 98 wt.% ZnO) films deposited by RF-magnetron sputtering. We have obtained AZO thin films deposited at low temperature and all the deposited AZO thin films are grown as colunmar. The average transmittance in the visible wavelength region is over 80% for all the films and transmittance improved with increasing substrate temperature. Electrical properties of the AZO films improved with increasing substrate temperature.

• Applied Chemistry for Engineering
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• v.24 no.1
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• pp.93-98
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• 2013

In this paper, four conducting polymers (poly[(N-butyl-phenothiazine)-sulfide] (PBPS), poly[(N-hexyl-phenothiazine)-sulfide] (PHPS), poly[(N-decyl-phenothiazine)-sulfide] (PDPS), and poly[(N-(2-ethylhexyl)-phenothiazine)-sulfide] (PEHPS)) were synthesized with a high temperature and high pressure reaction. The structures of synthesized polymers were confirmed by $^1H-NMR$ and characterized by UV-Vis, cyclic voltammetry, and GPC. From the UV-Vis absorption spectra, the ${\lambda}_{max}$ values of PBPS, PHPS, PDPS, and PEHPS were 338, 341, 340, and 334 nm, respectively and their optical band gaps were 3.11, 3.13, 3.16, and 3.05 eV, respectively. To evaluate the feasible applicability as a photovoltaic cell, the devices composed of for example, ITO/PEDOT : PSS/polymer (PBPS, PDPS) : $PC_{71}BM$ (1 : 3, w/w)/$BaF_2$/Ba/Al were fabricated using the blends of the PBPS and PDPS as a donor, and $PC_{71}BM$ as an acceptor. Then, the power conversion efficiencies (PCE) of devices were estimated as 0.076% of PBPS and 0.136% of PDPS by solar simulator.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.13 no.11
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• pp.5458-5464
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• 2012

In LTE-Advanced that different networks coexist, it is considered that it is actually difficult to provide service continuity with a procedural and static control method applied to the existing voice service. This research suggests a resource management framework to support the service continuity effectively based on QoS support. In other words, as context information of mobile terminal and base station changes, set-up of related functions such as ISHO, cell selection, source allocation, load control, and QoS mapping is adapted; each function fits into the change, exchanges the process of reorganization, and interacts; these actions go toward to satisfy service continuity. For this aim, the sequence diagram between the function modules for supporting four kind of ISHO is described and then a scenario for ISHO is considered.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.15 no.1
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• pp.13-21
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• 2001

The discharge characteristics of 3 electrcdes AC surface discharge plasma display were analyzed. For an unstable state of the discharge which appeared at the maximum discharge voltage, it is found that a parbal erase of the wall charge by the second discharge is a cause. Based on the second discharge, new operation margin considering the interrelation between the address discharge and the display discharge was defined and the validity of it was verified by the experiments. It is necessary to decrease the acklress pulse width for high-speed addressing. However, the operation margin of the ackIress pulse decreases as the pulse width of it becomes narrower. If the address pulse width is wider than l[ps], the operation margin of the display discharge is not related to the address pulse width. From the experimental result, image or 8bit 253 gray level was displayed on PDP with the cell structure of the HDTV class by using the high-speed address ADS drive methcd with pulse width of $1[{\mu}s]$ and the brightness of $560[cd/m^2]$ was obtained. ained.

• Molecules and Cells
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• v.45 no.7
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• pp.454-464
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• 2022

DJ-1 is one of the causative genes of early-onset familial Parkinson's disease (PD). As a result, DJ-1 influences the pathogenesis of sporadic PD. DJ-1 has various physiological functions that converge to control the levels of intracellular reactive oxygen species (ROS). Based on genetic analyses that sought to investigate novel antioxidant DJ-1 downstream genes, pyruvate dehydrogenase (PDH) kinase (PDK) was demonstrated to increase survival rates and decrease dopaminergic (DA) neuron loss in DJ-1 mutant flies under oxidative stress. PDK phosphorylates and inhibits the PDH complex (PDC), subsequently downregulating glucose metabolism in the mitochondria, which is a major source of intracellular ROS. A loss-of-function mutation in PDK was not found to have a significant effect on fly development and reproduction, but severely ameliorated oxidative stress resistance. Thus, PDK plays a critical role in the protection against oxidative stress. Loss of PDH phosphatase (PDP), which dephosphorylates and activates PDH, was also shown to protect DJ-1 mutants from oxidative stress, ultimately supporting our findings. Further genetic analyses suggested that DJ-1 controls PDK expression through hypoxia-inducible factor 1 (HIF-1), a transcriptional regulator of the adaptive response to hypoxia and oxidative stress. Furthermore, CPI-613, an inhibitor of PDH, protected DJ-1 null flies from oxidative stress, suggesting that the genetic and pharmacological inhibition of PDH may be a novel treatment strategy for PD associated with DJ-1 dysfunction.

• Korean Journal of Agricultural Science
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• v.15 no.1
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• pp.15-22
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• 1988

Factors affecting the regeneration, reversion of protoplasts from mycelium of F. velutipes were investigated and the selection of auxotrophic mutants from protoplasts of F. velutipes was performed. PDP medium stabilized with 0.6M sucrose was suitable for the regeneration of protoplasts, and regeneration frequency was 0.47-1.32. The regeneration frequency of protoplasts was increased when nutrients were added to the regeneration medium. Especially, yeast extract was the most effective to regeneration of protoplasts. Regeneration pattern of protoplasts was formation of germ tubes from bud-like cells. 13-18% of monokaryotic strains was appeared from reverted protoplasts. Five of auxotrophic mutants were isolated from strains showed survival frequency of 1.9-16.

• JSTS:Journal of Semiconductor Technology and Science
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• v.16 no.1
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• pp.91-105
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• 2016

Carbon Nanotube Field-Effect Transistors (CNTFETs) have been studied as candidates for post Si CMOS owing to the better electrostatic control and high mobility. To enhance the immunity against short - channel effects (SCEs), the novel channel and gate engineered architectures have been proposed to improve CNTFETs performance. This work presents a comprehensive study of the influence of channel and gate engineering on the CNTFET switching, high frequency and circuit level performance of carbon nanotube field-effect transistors (CNTFETs). At device level, the effects of channel and gate engineering on the switching and high frequency characteristics for CNTFET have been theoretically investigated by using a quantum kinetic model. This model is based on two-dimensional non-equilibrium Green's functions (NEGF) solved self - consistently with Poisson's equations. It is revealed that hetero - material - gate and lightly doped drain and source CNTFET (HMG - LDDS - CNTFET) structure can significantly reduce leakage current, enhance control ability of the gate on channel, improve the switching speed, and is more suitable for use in low power, high frequency circuits. At circuit level, using the HSPICE with look - up table(LUT) based Verilog - A models, the impact of the channel and gate engineering on basic digital circuits (inverter, static random access memory cell) have been investigated systematically. The performance parameters of circuits have been calculated and the optimum metal gate workfunction combinations of ${\Phi}_{M1}/{\Phi}_{M2}$ have been concluded in terms of power consumption, average delay, stability, energy consumption and power - delay product (PDP). In addition, we discuss and compare the CNTFET-based circuit designs of various logic gates, including ternary and binary logic. Simulation results indicate that LDDS - HMG - CNTFET circuits with ternary logic gate design have significantly better performance in comparison with other structures.