• Title/Summary/Keyword: PCS Phone

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Top and Bottom Symmetrical Loop Antenna for Multi-media Devices (멀티미디어단말기용 상하대칭 루프 안테나)

  • Shin, Cheon-Woo
    • Journal of Korea Multimedia Society
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    • v.14 no.3
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    • pp.414-422
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    • 2011
  • The paper is for top and bottom symmetrical phase controlled loop antenna using for multi-media devices. We developed a top and bottom phase control loop pattern arrangement methods for loop antenna in mobile devices like as a cell phone and PCS, WCDMA. In the loop antenna pattern, arrange close adhesive the loop antenna pattern $180^{\circ}$ cycle in wave length, the radiated electro-magnetic wave from close adhesive loop pattern in $180^{\circ}$ become to coherent wave than the phase controlled loop antenna has high efficiency and high radiation gain. To acquire a wide band width on phase controlled loop antenna, we arrange a top and bottom symmetrical architecture loop pattern that bas a $180^{\circ}$ wave length in each layer. Top and bottom each layer bas a U form pattern separated $90^{\circ}$ wave length each other. This architecture cause a well balanced electro-magnetic flow control that acquired wide bandwidth resonance response in loop pattern antenna. In experiment, we designed a WCDMA mobile multi-media antenna in $40mm{\times}6mm$ area thickness 0.2mm, in that passive experiment the radiation efficiency is over 50% and over 0dBi radiation average gain was acquired, in the active experiment in real multi-media device we acquired -4dBi average gain and 43% transmit/receive efficiency.

OpenGL ES 1.1 Implementation Using OpenGL (OpenGL을 이용한 OpenGL ES 1.1 구현)

  • Lee, Hwan-Yong;Baek, Nak-Hoon
    • The KIPS Transactions:PartA
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    • v.16A no.3
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    • pp.159-168
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    • 2009
  • In this paper, we present an efficient way of implementing OpenGL ES 1.1 standard for the environments with hardware-supported OpenGL API, such as desktop PCs. Although OpenGL ES was started from the existing OpenGL features, it becomes a new three-dimensional graphics library customized for embedded systems through introducing fixed-point arithmetic operations, buffer management with fixed-point data type supports, completely new texture mapping functionalities and others. Currently, it is the official three dimensional graphics library for Google Android, Apple iPhone, PlayStation3, etc. In this paper, we achieved improvements on the arithmetic operations for the fixed-point number representation, which is the most characteristic data type for OpenGL ES. For the conversion of fixed-point data types to the floating-point number representations for the underlying OpenGL, we show the way of efficient conversion processes even with satisfying OpenGL ES standard requirements. We also introduced a simple memory management scheme to mange the converted data for the buffer containing fixed-point numbers. In the case of texture processing, the requirements in both standards are quite different and thus we used completely new software-implementations. Our final implementation result of OpenGL ES library provides all of over than 200 functions in OpenGL ES 1.1 standard and completely passed its conformance test, to show its compliance with the standard. From the efficiency viewpoint, we measured its execution times for several OpenGL ES-specific application programs and achieved at most 33.147 times improvements, to become the fastest one among the OpenGL ES implementations in the same category.

Improvement of Mobile Web Usability for Mobile Cloud Computing (모바일 클라우드 컴퓨팅에 최적화된 모바일 웹 사용성 개선)

  • Lee, Myung-Sun;Oh, Hyoung-Yong;Min, Byoung-Won;Oh, Yong-Sun
    • The Journal of the Korea Contents Association
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    • v.11 no.9
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    • pp.85-95
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    • 2011
  • Recently, sudden interests of mobile cloud computing as well as conventional internet environment are rapidly increased as cloud computing spread out in our web society. Mobile devices including smart phone are rapidly changing in a wholesale way that covers hardwares, applications, and services. However, the Internet access using mobile device is not quite smooth in this local mobile internet environment which suffers from lack of understanding and observance of Web Standards. Although most of domestic web sites are developed focusing on various functions and eye-catching designs, this should became one of the main factors that make the usability and accessability decrease when accessing web with smart phones or table PCs. Therefore, this paper suggested a web interface that considered usability and accessability under mobile cloud environment and we tried to prove it via usability test. It could be found that there was an improvement of usability of interface of the main page that has been optimized to the mobile device environment suggested from the previous research we present, but this paper aimed to prove a usability improvement of total website as a whole by performing the usability test on the entire website. Selecting a special website optimized for mobile cloud computing, we prove an improvement of usability and accessibility. Therefore, we offer a guideline about user interface design applications to developers or companies who want to construct mobile website.

Side-Wall 공정을 이용한 WNx Self-Align Gate MESFET의 제작 및 특성

  • 문재경;김해천;곽명현;임종원;이재진
    • Proceedings of the Korean Vacuum Society Conference
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    • 1999.07a
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    • pp.162-162
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    • 1999
  • 초고주파 집적회로의 핵심소자로 각광을 받고 있는 GaAs MESFET(MEtal-emiconductor)은 게이트 형성 공정이 가장 중요하며, WNx 내화금속을 이용한 planar 게이트 구조의 경우 임계전압(Vth:threshold voltage)의 균일도가 우수할 뿐만 아니라 특히 Side-wall을 이용한 self-align 게이트는 소오스 저항을 줄일 수 있어 고성능의 소자 제작을 가능하게 한다.(1) 본 연구의 핵심이 되는 Side-wall을 형성하기 위하여 PECVD법에 의한 SiOx 박막을 증착하고, 건식식각법을 이용하여 SiOx side-wall을 형성하였다. 이 공정을 이용하여 소오스 저항이 낮고 임계전압의 균일도가 우수한 고성능의 self-aligned gate MESFET을 제작하였다. 3inch GaAs 기판상에 이온주입법에 의한 채널 형성, d.c. 스퍼터링법에 의한 WNx 증착, PECVD법에 의한 SiOx 증착, MERIE(Magnetic Enhanced Reactive Ion Etcing)에 의한 Side-wall 형성, LDD(Lightly Doped Drain)와 N+ 이온주입, 그리고 RTA(Rapid Thermal Annealing)를 사용하여 활성화 공정을 수행하였다. 채널은 40keV, 4312/cm2로, LDD는 50keV, 8e12/cm2로 이온주입하였고, 4000A의 SiOx를 증착한 후 2500A의 Side-wall을 형성하였다. 옴익 접촉은 AuGe/Ni/Au 합금을 이용하였고, 소자의 최종 Passivation은 SiNx 박막을 이용하였다. 제작된 소자의 전기적 특성은 hp4145B parameter analyzer를 이용한 전압-전류 측정을 통하여 평가하였다. Side-wall 형성은 0.3$\mu\textrm{m}$ 이상의 패턴크기에서 수직으로 잘 형성되었고, 본 연궁에서는 게이트 길이가 0.5$\mu\textrm{m}$인 MESFET을 제작하였다. d.c. 특성 측정 결과 Vds=2.0V에서 임계전압은 -0.78V, 트랜스컨덕턴스는 354mS/mm, 그리고 포화전류는 171mA/mm로 평가되었다. 특히 본 연구에서 개발된 트랜지스터의 게이트 전압 변화에 따른 균일한 트랜스 컨덕턴스의 특성은 RF 소자로 사용할 때 마이크로 웨이브의 왜곡특성을 없애주기 때문에 균일한 신호의 전달을 가능하게 한다. 0.5$\mu\textrm{m}$$\times$100$\mu\textrm{m}$ 게이트 MESFET을 이용한 S-parameter 측정과 Curve fitting 으로부터 차단주파수 fT는 40GHz 이상으로 평가되었고, 특히 균일한 트랜스컨덕턴스의 경향과 함께 차단주파수 역시 게이트 바이어스, 즉 소오스-드레스인 전류의 변화에 따라 균일한 값을 보였다. 본 연구에서 개발된 Side-wall 공정은 게이트 길이가 0.3$\mu\textrm{m}$까지 작은 경우에도 사용가능하며, WNx self-align gate MEESFET은 낮은 소오스저항, 균일한 임계전압 특성, 그리고 높고 균일한 트랜스 컨덕턴스 특성으로 HHP(Hend-Held Phone) 및 PCS(Personal communication System)와 같은 이동 통신용 단말기의 MMICs(Monolithic Microwave Integrates Circuits)의 제작에 활용될 것으로 기대된다.

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