• Title/Summary/Keyword: PBH structure

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Fabrication and Characteristics of 1.55$\mu\textrm{m}$ InGaAsP/InP PBH-DFB-LD for 2.5Gbps Optical Fiber Communication (2.5Gbps 광통신용 1.55$\mu\textrm{m}$ InGaAsP/InP PBH-DFB-LD 제작 및 특성)

  • 이중기;장동훈;조호성;이승원;박경현;김정수;김홍만;박형무
    • Journal of the Korean Institute of Telematics and Electronics A
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    • v.31A no.9
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    • pp.139-145
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    • 1994
  • InGaAsP/InP PBH-DFB-LD emitting at 1.55${\mu}$m wavelength has been fabricated for 2.5Gbps optical fiber communcations. For fabrication of PBH-DFB-LD, Interference expose for grating formation 3-step LPE epitaxial growth were used. Fabricated PBH-DFB-LD operates in single longitudinal mode with larger than 35dB SMSR and wider than 3dB bandwidth of 3GHz. A 8${\mu}$m mesa structure was introduced by channel etching to reuce parasitic capacitance. To reduce pad capacitance, we designed a small electrode. 0.27mW/mA in the case of spectrum shows single logitudinal mode operation with larger thatn 30dB SMSR measured at 5mW.

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The operating characteristics of strain-compensated 1.3$\mu$m GaInAsP/InP uncooled-LD with the structure of multiple quantum well and separate confinement heterostructure layers (응력완화 1.3$\mu$m GaInAsP/InP uncooled-LD의 다중양자우물층과 SCH층 구조에 따른 동작 특성)

  • 조호성;박경현;이정기;장동훈;김정수;박기성;박철순;김홍만;편광의
    • Journal of the Korean Institute of Telematics and Electronics A
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    • v.33A no.7
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    • pp.185-197
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    • 1996
  • We have adopted the strain compensated PBH(planar buried heterostructure) - LD in which the MQW active layer consisted of 1.4% compressively strained GainAsP (E$_{g}$ = 0.905eV) wells and 0.7% tensile strained GaInAsP(E$_{g}$ = 1.107eV) barriers grown by metal organic vapor phase epitaxy (MOVPE). We hav einvestigated effects of number of wells and the structure of the separate confinement heterostructure (SCH) layer in the strain-compensated MQW-PBH-LD. The threshold current, the external quantum efficiency, the transparency current density J$_{o}$, and the gain constant .beta. have been evaluated for uncoated MQW-PBH-LD. As the number of wells increases, the internal quantum efficiency and the transparency current density decreases, whereas the gain contant increases. The small width of the SCH layer shows the large internal quantum efficiency. The small internal loss and the large gain constant have been obtained by inserting the large bandgap SCH layer.

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The Operating Characteristics of DBR-LD with Wavegudies Coupling Structure (도파로 결합 구조에 따른 DBR-LD의 동작특성)

  • 오수환;박문호
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.40 no.9
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    • pp.666-672
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    • 2003
  • In this paper, we described the fabrication and the performance of wavelength tunable distributed bragg reflector (DBR) laser diode (LD), having different waveguide coupling mechanisms; integrated-twin-guide (ITG) DBR-LD and butt coupled (BT) DBR-LD. This deviceis fabricated by metal organic vapor phase epitaxy (MOVPE) growth and planar buried heterostructure (PBH)-type transverse current confinement structure. The result of measurement, the optical performance of BT-DBR-LD is better over 2 times than that of ITG-DBR-LD at the variation of threshold current and output power, and slop efficiency due to the higher coupling efficiency of the butt coupled structure than the integrated twin guide structure. The maximum wavelength tuning range is about 7.2nm for ITG DBR-LD and 7.4nm for BT DBR-LD. Both types of lasers have a very high yield of single mode operation with a side-mode suppression ratio of more than 35dB.

Fabrication of Butt-Coupled SGDBR Laser Integrated with Semiconductor Optical Amplifier Having a Lateral Tapered Waveguide

  • Oh, Su-Hwan;Ko, Hyun-Sung;Kim, Ki-Soo;Lee, Ji-Myon;Lee, Chul-Wook;Kwon, Oh-Kee;Park, Sahng-Gii;Park, Moon-Ho
    • ETRI Journal
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    • v.27 no.5
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    • pp.551-556
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    • 2005
  • We have demonstrated a high-power widely tunable sampled grating distributed Bragg reflector (SGDBR) laser integrated monolithically with a semiconductor optical amplifier (SOA) having a lateral tapered waveguide, which is the first to emit a fiber-coupled output power of more than 10 dBm using a planar buried heterostructure (PBH). The output facet reflectivity of the integrated SOA using a lateral tapered waveguide and two-layer AR coating of $TiO_2\;and\;SiO_2$ was lower than $3\;{\times}\;10^{-4}\;over$ a wide bandwidth of 85 nm. The spectra of 40 channels spaced by 50 GHz within the tuning range of 33 nm were obtained by a precise control of SG and phase control currents. A side-mode suppression ratio of more than 35 dB was obtained in the whole tuning range. Fiber-coupled output power of more than 11 dBm and an output power variation of less than 1 dB were obtained for the whole tuning range.

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Call Admission Control Techniques of Mobile Communication System using SRN Models (SRN 모델을 이용한 이동통신 시스템의 호 수락 제어 기법)

  • 로철우
    • Journal of the Institute of Electronics Engineers of Korea TC
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    • v.39 no.12
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    • pp.529-538
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    • 2002
  • Conventional method to reduce the handoff call blocking probability(PBH) in mobile communication system is to reserve a predetermined number of channels only for handoff calls. To determine the number of reserved channels, an optimization problem, which is generally computationally heavily involved, must be solved. In this Paper, we propose a call admission control (CAC) scheme that can be used to reduce the PBH without reserving channels in advance. For this, we define a new measure, gain, which depends on the state of the system upon the arrival of a new call. The proposed CAC decision rule relies on the gain computed when a new call arrives. SRN, an extended stochastic Petri nets, provides compact modeling facilities for system analysis can be calculated performance index by appropriate reward to the model. In this Paper, we develop SRN models which can perform the CAC with gain. The SRN models are 2 level hierarchical models. The upper layer models are the structure state model representing the CAC and channel allocation methods considering QoS with multimedia traffic The lower layer model Is to compute the gain under the state of the upper layer models.

PRIMORDIAL BLACKHOLE AS A SEED FOR THE COSMIC MAGNETIC FIELD

  • LA DAIL;PARK CHANGBOM
    • Journal of The Korean Astronomical Society
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    • v.29 no.2
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    • pp.83-91
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    • 1996
  • We present a model that rotating primordial blackholes(PBHs) produced at the end of inflation generate the random, non-oriented primordial magnetic field. PBHs are copiously produced as the Universe completes the cosmic phase transition via bubble nucleation and tunneling processes in the extended inflation hypothesis. The PBHs produced acquire angular momentum through the mutual tidal gravitational interaction. For PBHs of mass less than 1013g, one can show that the evaporation (photon) luminosity of PBHs exceeds the Eddington limit. Thus throughout the lifetime of the rotating PBH, radiation flow from the central blackhole along the Kerr-geodesic exerts torque to ambient plasma. In the process similar to the Bierman's battery mechanism electron current reaching up to the horizon scale is induced. For PBHs of Grand Unified Theories extended inflation with the symmetry breaking temperature of $T_{GUT}\;\~\;10^{10}$ GeV, which evaporate near decoupling, we find that they generate random, non-oriented magnetic fields of $\~10^{-11}G$ on the last-scattering surface on (the present comoving) scales of $\~O(10)Mpc$.

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A Fabrication of the Tilted Waveguide Structure SLD and Its Output Light Power Characteristics (경사 도파로형 고휘도 레이저 다이오드(SLD)의 제작 및 광출력 특성)

  • Choi Young-Kyu;Kim Girae
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.55 no.2
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    • pp.55-60
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    • 2006
  • In order to suppress lasing oscillation and obtain high light power, We have proposed a novel SLD which is formed with a straight and tilted waveguide. The window region is used to suppress lasing oscillation and reduce the facet reflectivity. High power and low reflectivity is obtained by the straight and tilted waveguide. Based on the theoretical analysis, we have fabricated the SLD with the waveguide of 500 $\mu$m length and window region of 50 $\mu$m by LPE equipment. Through the measurements of optical characteristics, the output light power of 3 mW was obtained at the 150 mA CW injection current and 25$^{circ}C$. We have confirmed that the proposed SLD has a 0.8 dB spectrum ripple lower than 1 dB which is sufficiently low reflectivity for preventing lasing.

A study on the fabrication of semiconductor laser for optical sensor (광센서 광원용 반도체 레이저의 제작에 관한 연구)

  • Kim, Jeong-Ho;An, Se-Kyung;Hwang, Sang-Ku;Hong, Tchang-Hee
    • Journal of Navigation and Port Research
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    • v.26 no.2
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    • pp.235-243
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    • 2002
  • Theoretical analysis have been performed to design the high power semiconductor laser for an optical sensor at 1.55${\mu}{\textrm}{m}$ wavelength range which is the lowest loss wavelength in optical fiber. The materials of active region and SCH were $Ln_{1-x}Ga_xAs_yP_{1-y}$. In order to use the light source of optical sensors, it has to satisfy wide spectral width and short coherence length. Therefore, in order to suppress lasing oscillation, we proposed laterally tilted PBH type with a window region. Also, tapered stripe structure was applied for high coupling efficiency into a single mode fiber. From these analyses, the devices of laterally tilted angled and bending structure were fabricated and their characteristics were measured. In the results of the measurement, the fabricated devices have sufficient output power and wide FWHM to apply to the light source of optical fiber sensors.