• ETRI Journal
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• v.26 no.5
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• pp.475-480
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• 2004

Self-assembled InAs quantum dots (QDs) embedded in an InAlGaAs matrix were grown on an InP (001) using a solid-source molecular beam epitaxy and investigated using transmission electron microscopy (TEM) and photoluminescence (PL) spectroscopy. TEM images indicated that the QD formation was strongly dependent on the growth behaviors of group III elements during the deposition of InAlGaAs barriers. We achieved a lasing operation of around 1.5 ${\mu}m$ at room temperature from uncoated QD lasers based on the InAlGaAs-InAlAs material system on the InP (001). The lasing wavelengths of the ridge-waveguide QD lasers were also dependent upon the cavity lengths due mainly to the gain required for the lasing operation.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.35 no.2
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• pp.165-171
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• 2022

The SiO₂/TiO₂ multilayer thin films used for narrow band pass filter were fabricated using E-beam evaporation method. The narrow band pass filter was used to enhance the resolution of spectroscopy and sensor applications with near infrared (NIR) light source. The narrow band pass filter with multilayer thin films were designed with Essential Macleod program. The multilayers of SiO₂/TiO₂ with 32 layers were deposited on the silicon encapsulation of IR with peak wavelength (λ_p) of 660 nm and NIR LEDs with λ_p of 830 nm, 880 nm, and 955 nm. After NIR light passed through the narrow band pass filter, the full width of half maximum of 33.4~48.6 nm became narrow to 20~24 nm owing to the absorption of photons with short or long wavelength of designed band of 20 nm. The SiO₂/TiO₂ band pass filter fabricated in this study can be used for sensor, optoelectronics, and NIR spectroscopy applications.

• Nuclear Engineering and Technology
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• v.56 no.1
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• pp.195-206
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• 2024

Shenzhen Innovation Light source Facility (SILF) is a 3.0 GeV fourth generation diffraction limited synchrotron light source currently under construction in Shenzhen. The SILF storage ring is proposed to use two 500 MHz single cell superconducting radio frequency (SRF) cavities to provide 2.4 MV RF voltage. In this study, we examined the geometric structure of mature CESR superconducting cavities and adopted a beam-pipe-type extraction scheme for high-order modes (HOM). One of the objectives of SRF cavity design and optimization in this study is to reduce E_p/E_acc and B_p/E_acc as much as possible to reduce power loss and ensure stable operation of the cavity. To reduce the risk of beam instability and thermal breakdown, the HOM and Multipacting (MP) are simulated. Moreover, the mechanical properties of the cavity are analyzed, including frequency sensitivity from pressure of liquid helium (LHe), stress, tuning, Lorentz force detuning (LFD), the microphone effect, and buckling. By comprehensive design and optimization of 500 MHz single-cell SRF cavities, a superconducting cavity for SILF storage ring was developed. This paper will detailed present the design and simulation.

• Proceedings of the Korean Nuclear Society Conference
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• 1995.05a
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• pp.925-930
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• 1995

A new approach on the correction for Compton escape component in X-ray unfolding algorithm was investigated to obtain more accurate X-ray source spectrum. The X-ray detector used in this study was a planar type HPGe detector(EG&G ORTEC, GLP-32340/13-P-LP) whose energy response has been blown and ISO narrow beam series were employed as source spectrum. At lower energy Part of measured X-ray spectrum including the correction for Compton escape component more accurate unfolded spectrum was obtained by letting down the starting energy level of the collection in existing spectrum correction procedure to consider multiple scattering effects. It is, from this study, concluded that accurate correction for Compton escape component is needed in X-ray unfolding procedure since Compton scattering becomes more important as incident X-ray energies increase.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2004.10a
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• pp.590-595
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• 2004

The shape and size variations of the nanopatterns produced on a positive photoresist using a near-field scanning optical microscope(NSOM) are investigated with respect to the process variables. A cantilever type nanoprobe having a 100nm aperture at the apex of the pyramidal tip is used with the NSOM and a He-Cd laser at a wavelength of 442nm as the illumination source. Patterning characteristics are examined for different laser beam power at the entrance side of the aperture( $P_{in}$ ), scan speed of the piezo stage(V), repeated scanning over the same pattern, and operation modes of the NSOM(DC and AC modes). The pattern size remained almost the same for equal linear energy density. Pattern size decreased for lower laser beam power and greater scan speed, leading to a minimum pattern width of around 50nm at $P_{in}$ =1.2$\mu$W and V=12$\mu$m/. Direct writing of an arbitrary pattern with a line width of about 150nm was demonstrated to verify the feasibility of this technique for nanomask fabrication. Application on high-density data storage using azopolymer is discussed at the end.

• Smart Structures and Systems
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• v.5 no.3
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• pp.223-240
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• 2009

As in any engineering application, the problem of structural assessment should face the different uncertainties present in real world. The main source of uncertainty in Health Monitoring System (HMS) applications are those related to the sensor accuracy, the theoretical models and the variability in structural parameters and applied loads. In present work, two methodologies have been developed to deal with these uncertainties in order to adopt reliable decisions related to the presence of damage. A simple example, a steel beam analysis, is considered in order to establish a liable comparison between them. Also, such methodologies are used with a developed structural assessment algorithm that consists in a direct and consistent comparison between sensor data and numerical model results, both affected by uncertainty. Such algorithm is applied to a simple concrete laboratory beam, tested till rupture, to show it feasibility and operational process. From these applications several conclusions are derived with a high value, regarding the final objective of the work, which is the implementation of this algorithm within a HMS, developed and applied into a prototype structure.

• Applied Science and Convergence Technology
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• v.24 no.3
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• pp.67-71
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• 2015

InP/InGaP quantum structures (QSs) were grown on GaAs (001) substrates by a migration-enhanced molecular beam epitaxy method. Temperature-dependent photoluminescence (PL) and emission wavelength-dependent time-resolved PL (TRPL) were performed to investigate the optical properties of InP/InGaP QSs as a function of migration enhanced epitaxy (MEE) growth cycles from 2 to 8. One cycle for the growth of InP QS consists of 2-s In and 2-s P supply with an interruption time of 10 s after each source supply. As the MEE growth cycle increases from 2 to 8, the PL peak is redshifted and exhibited different (larger, comparable, or smaller) bandgap shrinkages with increasing temperature compared to that of bulk InP. The PL decay becomes faster with increasing MEE cycles while the PL decay time increases with increasing emission wavelength. These PL and TRPL results are attributed to the different QS density and size/shape caused by the MEE repetition cycles. Therefore, the size and density of InP QSs can be controlled by changing the MEE growth cycles.

• Progress in Medical Physics
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• v.27 no.4
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• pp.272-276
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• 2016

To investigate the optimum x-ray tube design for the dental radiology, factors affecting x-ray beam characteristics such as tungsten target thickness and anode angle were evaluated. Another goal of the study was to addresses the anode heel effect and off-axis spectra for different target angles. MCNPX has been utilized to simulate the diagnostic x-ray tube with the aim of predicting optimum target angle and angular distribution of x-ray intensity around the x-ray target. For simulation of x-ray spectra, MCNPX was run in photon and electron using default values for PHYS:P and PHYS:E cards to enable full electron and photon transport. The x-ray tube consists of an evacuated 1 mm alumina envelope containing a tungsten anode embedded in a copper part. The envelope is encased in lead shield with an opening window. MCNPX simulations were run for x-ray tube potentials of 70 kV. A monoenergetic electron source at the distance of 2 cm from the anode surface was considered. The electron beam diameter was 0.3 mm striking on the focal spot. In this work, the optimum thickness of tungsten target was $3{\mu}m$ for the 70 kV electron potential. To determine the angle with the highest photon intensity per initial electron striking on the target, the x-ray intensity per initial electron was calculated for different tungsten target angles. The optimum anode angle based only on x-ray beam flatness was 35 degree. It should be mentioned that there is a considerable trade-off between anode angle which determines the focal spot size and geometric penumbra. The optimized thickness of a target material was calculated to maximize the x-ray intensity produced from a tungsten target materials for a 70 keV electron energy. Our results also showed that the anode angle has an influencing effect on heel effect and beam intensity across the beam.

• Journal of IKEEE
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• v.13 no.4
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• pp.23-27
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• 2009

Ohmic contact formation and etching processes for the fabrication of MBE (molecular beam epitaxy) grown GaSb-based p-channel HEMT devices on Si substrate have been studied. Firstly, mesa etching process was established for device isolation, based on both HF-based wet etching and ICP-based dry etching. Ohmic contact process for the source and drain formation was also studied based on Ge/Au/Ni/Au metal stack, which resulted in a contact resistance as low as $0.683\;{\Omega}mm$ with RTA at $320^{\circ}C$ for 60s. Finally, for gate formation of HEMT device, gate recess process was studied based on AZ300 developer and citric acid-based wet etching, in which the latter turned out to have high etching selectivity between GaSb and AlGaSb layers that were used as the cap and the barrier of the device, respectively.

• Korean Journal of Materials Research
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• v.21 no.5
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• pp.268-272
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• 2011

Due to their novel properties, GaN based semiconductors and their nanostructures are promising components in a wide range of nanoscale device applications. In this work, the gallium nitride is deposited on c-axis oriented sapphire and porous SWCNT substrates by molecular beam epitaxy using a novel single source precursor of $Me_2Ga(N_3)NH_2C(CH_3)_3$ with ammonia as an additional source of nitrogen. The advantage of using a single molecular precursor is possible deposition at low substrate temperature with good crystal quality. The deposition is carried out in a substrate temperature range of 600-750$^{\circ}C$. The microstructural, structural, and optical properties of the samples were analyzed by scanning electron microscopy, X-ray diffraction, Raman spectroscopy, and photoluminescence. The results show that substrate oriented columnar-like morphology is obtained on the sapphire substrate while sword-like GaN nanorods are obtained on porous SWCNT substrates with rough facets. The crystallinity and surface morphology of the deposited GaN were influenced significantly by deposition temperature and the nature of the substrate used. The growth mechanism of GaN on sapphire as well as porous SWCNT substrates is discussed briefly.