• Journal of the Semiconductor & Display Technology
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• v.11 no.4
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• pp.19-23
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• 2012

We report microbolometer characteristic with n-type and p-type amorphous silicon thin film. The n-type and p-type amorphous silicon thin films were made by PECVD. The electrical properties of n-type and p-type a-Si:H thin films were investigated as a function of doping gas flow rate. The doping gas used $B_2H_6/Ar$ (1:9) and $PH_3/Ar$ (1:9). In general, the conductivity of doping a-Si:H thin films increased as doping gas increase but the conductivity of a-Si:H thin films decreased as the doping gas increase because doping gas concentration increase led to dilution gas (Ar) increase as the same time. We fabricated an amorphous silicon microbolometer using surface micromachining technology. The fabricated microbolometer had a negative TCR of 2.3%. The p-type microbolometer had responsivity of $5{\times}10^4V/W$ and high detectivity of $3{\times}10^8cm(Hz)^{1/2}/W$. The p-type microbolometer had more detectivity than n-type for less noise value.

• Journal of the Korean Electrochemical Society
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• v.7 no.4
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• pp.167-172
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• 2004

3,4-dihydroxybenzaldehyde(3,4-DHB) was oxidatively el electropolymerized on glassy carbon (GC) electrodes to prepare CC/p-3,4-DHB type electrodes, which were subsequently modified with 3,4-dihydroxybenzoic acid(3,4-DHBA) using 0.05M HCI as a catalyst. The esterification reactions were performed between -OH sites on the polymeric film surface of the p-3,4-DHB and the -COOH sites within the 3,4-DHBA molecules in solution. These reactions had a rate constant value of $1.1\times10^{-1}\;s^{-1}$ for the esterification step as obtained from the first-order rate constant in the solution. The electrochemical responses of the GC/p-3,4-DHB-3,4-DHBA electrodes exert an influence upon the buffer solution, its pH and applied potential ranges. The redox process of the electrode was more easily controlled by charge transfer kinetics than that of the CC/p-3,4-DHB. The modified electrodes had redox active sites that were 10 times more active than those present before modification. The electrical admittance of the modified electrodes was also three times higher than that of the unmodified electrodes. After being annealed in ethanol for 20 hrs the electrodes brought about a 3.3 times greater change of water molecules in the redox reaction. The modified electrodes are stable in the potential range of 0.4 to 0.55V.

• Journal of radiological science and technology
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• v.31 no.3
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• pp.293-298
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• 2008

This study is aimed to investigate the change of serum compositions of mice caused by the irradiation. The 3Gy radiation with 10MeV Linac was once irradiated to whole body of mice and their serum was collected to conduct 14 biochemical analyses. With the collected data, t-test was performed. As the result, the significant change was confirmed in the following 3 compositions. First, the glucose level of the normal control group was $185.43{\pm}14.93$, but the irradiation group was found to be $220.00{\pm}17.58$, which shows significant difference(p<0.001). Second, the BUN(blood urea nitrogen) measurement showed lower value($15.70{\pm}1.48$) in the irradiation group than the normal control group($19.61{\pm}1.65$), which indicates the significant difference in mean value (p<0.01). Third, the measurement of albumin resulted in lower value of $2.89{\pm}0.25$ in irradiation group than $3.19{\pm}0.34$ of the normal control group, which shows the significant difference in mean value(p<0.05). In consequence, the serum of the mice irradiated with 3Gy radiation caused significant change in 3 compositions; glucose, Blood urea nitrogen(BUN) and albumin.

• Journal of Environmental Health Sciences
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• v.23 no.2
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• pp.83-88
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• 1997

To evaluate the effect of bromobenzene pretreatment on the bromobenzene metabolism, the animal group was induced the stage of slight liver damage with 7 times bromobenzene injection every two days (400 mg/kg body wt. i.p.). In the present experimental animal model, the single dose of bromobenzene(400 mg/kg body wt. i.p.) was injected to the bromobenzene-pretreated rats and the hepatic aniline hydroxylase(AH) activity, glutathione(GSH) content and glutathione S-transferase (GST) activity were determined at the intervals of 2, 4, 8, 24 hours throughout 24 hr. The activities of hepatic AH and GST were generally higher in bromobenzene-pretreated rats than those in normal group throughout the whole course of experiment. Furthermore, the decreasing rate of hepatic GSH content was also higher in bromobenzene pretreated rats than in normal rats. Moreover, the value of V$_{max}$ in hepatic GST was higher in bromobenzene pretreated rats than that in the normal rats. In conclusion, these results indicate that the pretreatment of bromobenzene may rather enhance the bromobenzene metabolism.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.04b
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• pp.80-83
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• 2000

The post-annealing treatments on rf magnetron sputtered PZT($Pb_{1.05}(Zr_{0.52},\;Ti_{0.48})O_3$) thin films($4000{\AA}$) have been investigated for a structure of PZT/Pt/Ti/Coming glass(1737). Crystallization properties of PZT films were strongly dependent on RTA(Rapid Thermal Annealing) annealing temperature and time. We were able to obtain a perovskite structure of PZT at $650^{\circ}C$ and 10min. P-E curves of Pd/PZT/Pt capacitor demonstrate typical hysteresis loops. The measured values of $P_r$, $E_c$ were $8.1[{\mu}C/cm^2]$, 95[kV/cm] respectively. Polarization value decrease about 25% after $10^9$ cycles.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.844-846
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• 2008

A new p-type conjugated copolymer, poly(9,10-diethynylanthracene-alt-9,9-didodecylfluorene (PDADF) was synthesized through a Sonogashira coupling reaction. A solution-processed thin film transistor device showed a carrier mobility value of $6.0\;{\times}\;10^{-4}\;cm^2/Vs$ with a threshold voltage of -17 V and a capacitance ($C_i$) of $10\;nF/cm^2$.

• Journal of Magnetics
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• v.2 no.4
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• pp.116-122
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• 1997

To determine whether there is an ionic substitution of Ni, Co, Mn, and Al for Fe in synthetic goethites these materials have been studied by M$\ddot{o}$ssbauer spectroscopy at various temperatures ranging from 77 to 400 K. It is found that the presence of substituting elements in magnetically ordered structure of crystals may change the shape of M$\ddot{o}$ssbauer spectra of these caterials. The approximate distribution function of the effective magnetic field in the Fe nucleus p(Hn) is obtained from the M$\ddot{o}$ssbauer spectra. It is noted that the mean value of p(Hn) and its integral width can be taken as a measure of substitution in goethites.

• Proceedings of the KIEE Conference
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• 2000.07c
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• pp.1477-1479
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• 2000

The annealing treatments on rf magnetron sputtered PZT($Pb_{1.05}(Zr_{0.52},Ti_{0.48})O_3$) thin films(4000${\AA}$) have been investigated for a structure of PZT/Pt/Ti/ITO coated glass. Crystallization properties of PZT films were strongly dependent on RTA(Rapid Thermal Annealing) annealing temperature and time. We were able to obtain a perovskite structure of PZT at 650$^{\circ}C$ and 10min. P-E curves of Pd/PZT/Pt capacitor demonstrate typical hysteresis loops. The measured values of $P_r$, $E_c$ were 15.8[${\mu}C/cm^2$], 95[kV/cm] respectively. Polarization value decrease about 10% after $10^9$ cycles.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.3
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• pp.164-167
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• 2016

In this study, in order to develop relaxor ferroelectric ceramics for refrigeration device application with large electrocaloric effect, PLZT(8/65/35) composition was fabricated using conventional solid-state method. The Curi temperature of this composition PLZT ceramics was $230^{\circ}C$, and the P-E hysteresis loops of the PLZT ceramics as a fuction of temperature became slim by degrees with higher temperatures. The maximum value of ${\Delta}T$ of $0.243^{\circ}C$ in ambient temperature of $215^{\circ}C$ with 30 kV/cm was appeared. It is considered that PLZT ceramics possess the possibility of refrigeration device application.

• Journal of Magnetics
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• v.15 no.4
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• pp.185-189
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• 2010

Spin polarized tunneling through a hybrid tunnel barrier of a Spin filter (SF) based on a EuO ferro-magnetic semiconductor and an organic semiconductor (OSC) (rubrene in this case) was investigated. For quasi-magnetic tunnel junction (MTJ) structures, such as Co/rubrene/EuO/Al, we observed a strong spin filtering effect of the EuO layer exhibiting I-V curves with high spin polarization (P) of up to 99% measured at 4 K. However, a magnetoresistance (MR) value of 9% was obtained at 4.2 K. The low MR compared to the high P could be attributed to spin scattering caused by structural defects at the interface between the EuO and rubrene, due to nonstoichiometry in the EuO.