• Journal of the Korean Chemical Society
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• v.14 no.4
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• pp.321-326
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• 1970

The relation between the heating temperature and the V.C.P(Vacuum Condensing Point) at different degree of vacuum through the sublimatographic separation was studied where by ; (1) Anthracene and Anthraquinone, ${\alpha}$-Naphtol and ${\beta}$-Naphthol, o-Aminobenzoicacid and p-Aminobeenzoicacid were easily separated from each of its mixtures as shown in Figure9, 10 and 11, while tailings appeared appreciably. The results were in good agreement with those expected from the $t_k$-V.C.P curves in Figures 3,4,5,6,7 and 8. (2) The relation between the degree of vacuum and the V.C.P. of ${\alpha}$-Naphthol and Anthracene at different heating temperatures appeared as follows and are shown in Figures 12 and 13.

• Tuberculosis and Respiratory Diseases
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• v.42 no.2
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• pp.218-225
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• 1995

Background: Airway resistance(Raw) is measured with the body plethysmograph by displaying the relationship between airflow and alveolar pressure($V/P_A$). If the resistance curve on $V/P_A$ tracing is curved or looped, the estimation of Raw is difficult. This study was designed to examine wheather there is any correlation between the shape of resistance curve and the clinical status and the pulmonary function of patients. Methods: The 146 pulmonary disease patients with increased Raw were included in this study. The shapes of resistance curves on $V/P_A$ tracing with body plethysmograph during quiet breathing were analyzed and compared with pulmonary function. Results: The results were as follows ; 1) The shapes of resistance curves were summarized in 5 categories; type 1: linear, type 2: ovoid, type 3: sigmoid, type 4: scoop, type 5: paisley. The type 3 except 1 case, type 4 and type 5 were found to have loop mainly in expiratory phase. 2) Although the shapes of resistance curves were not typical for specific disease, the resistance curves of acute disease tended to belong to type 1 or 2 and those of chronic airflow obstruction tended to belong to type 3, 4 or 5. But resistance curves of bronchial asthma and destructive lung with tuberculosis showed all types in proportion to degree of airflow obstruction or destruction of parenchyme. 3) In the cases of resistance curves going to type 5 rather than type 1 and those with looping, airflow obstuction tended to be severe and airway resistance and residual volume tended to increase. Conclusions: Analysis of resistance curve on $V/P_A$ tracing measuring airway resistance is helpful for judging degree of airflow obstruction and air trapping. Although the shape of resistance curve is not typical for specific disease, there is a close association between looping and airway obstruction.

• Elastomers and Composites
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• v.7 no.1
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• pp.53-58
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• 1972

Sublimatographic study on the method of test for sulfur in the petroleum and rubber products was as following results: (1) The relation between the heating temperature$(t_h)$ and the vacuum condensing point(V.C.P.) of sulfur at different degree of vacuum appeared as Fig.4. The results were in good agreement with those expected from the $t_h-V.C.P$ curves of sublimatographic separation of sulfur. (2) The relation between the degree of vacuum and the V.C.P. at different heating temperature of sulfur appeared as follows; $$tv.c.p.=\alpha+{\beta}logP_{va}$$ (3) The V.C.P of sulfur could be physical property comparing with melting point and boiling point. (4) The relation between the V.C.P. and the quantity of sublimation of sulfur becomes quantitative as Fig.7.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.6
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• pp.575-579
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• 2008

Al-doped p-type ZnO films were fabricated on n-Si (100) and homo-buffer layers in pure oxygen at $450^{\circ}C$ of by RF magnetron sputtering. Target was ZnO ceramic mixed with 2 wt% $Al_2O_3$. XRD spectra show that the Al-doped ZnO thin films have ZnO crystal structure and homo-buffer layers are beneficial to Al-doped ZnO films to grow along c-axis. Hall Effect experiments with Van der Pauw configuration show that p-type carrier concentrations are ranged from $1.66{\times}10^{16}$ to $4.04{\times}10^{18}\;cm^{-3}$, mobilities from 0.194 to $2.3\;cm^2V^{-1}s^{-1}$ and resistivities from 7.97 to $18.4\;{\Omega}cm$. p-type sample has density of $5.40\;cm^{-3}$ which is smaller than theoretically calculated value of $5.67\;cm^{-3}$. XPS spectra show that Ols has O-O and Zn-O structures and Al2p has only Al-O structure. P-ZnO:Al/n-ZnO:Al junctions were fabricated by magnetron sputtering. V-I curves show that the p-n junctions have rectifying characteristics.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.219-219
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• 2013

The effect of an electron blocking layer (EBL) on V-I curves in GaN/InGaN multiple quantum well is investigated. For the first time, we found that curves were intersected at 3.012 V and analyzed the reason for intersection. The forward voltage in LEDs with an p-AlGaN EBL is larger than without p-AlGaN EBL at low injection current because the Mg doping efficiency for p-GaN layer was higher than that of p-AlGaN layer. However, the forward voltage in LEDs with an p-AlGaN EBL is smaller than without p-AlGaN EBL at high injection current because the carriers overflow from the active layer when injection current increases in LEDs without p-AlGaN EBL and in case of LED with p-AlGaN EBL, the carriers are blocked by EBL.

• Journal of Information Display
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• v.13 no.1
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• pp.7-16
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• 2012

In this paper, the problem concerning the color accuracy of imaging systems using color filters is examined. It is shown that the only solution to the problem is to build systems with the spectral response matching the CIE curves as closely as possible. If the spectral response does not closely match the CIE curves, it was demonstrated that calibration cannot solve the problem and will result in very unstable colorimeters. A practical solution that uses telecentric lenses on the sensor side in addition to dedicated color filters for each CCD detector is presented. For systems that closely match the CIE curves, an innovative method of improving the color accuracy based on the precise measurement of the spectral response is presented. The small discrepancies in the spectral response with regard to the CIE curves are corrected in different ways during the measurements. Finally, it is shown that the tristimulus calibration that is used for display measurement is very unstable for systems without CIE matching and is much more stable with systems that closely match the CIE curves.

• Journal of Astronomy and Space Sciences
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• v.15 no.2
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• pp.335-340
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• 1998

We obtained UV light curves of 44i Bootis, a W UMa type star from the IUE low dispersion spectra. In order to investigate variations of the emission lines from chromospheric activity and transition region, UV line intensity has been measured for CI, CII, ClV, SiIV, HeII lines. Through plotting the line intensity with the orbital phase, we found that emission lines showed maximum at $0^p.2;and;0^p.8$ of the light curves, indicating the chromospheric activity of contact binary, 44i Bootis. We found that the light curves of UV emission lines is strongly modulated by the variation of chromospheric activities of 44i Bootis.

• Journal of the Korea institute for structural maintenance and inspection
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• v.5 no.3
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• pp.233-244
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• 2001

Stress-strain behaviour of soil varies based on stress path and stress history. There has been few study on the characteristics of yielding curve which has anisotropic compression stress history in decomposed granite soil. During this study, various stress path tests in previous anisotropic compression stress history are performed on compacted decomposed granite soil sampled at Iksan, Chonbuk. Yielding points are determined from various stress-strain curves (${\eta}-{\varepsilon}$, ${\eta}$-v, and ${\eta}$-k, ${\eta}$-W curves). Stress-strain curve is certified which shows yielding point very clearly. The shape and characteristics of anisotropic compression yielding curves are examined. The main results are summarized as follows : 1) p' constant and compressive direction in stress paths, which has experienced previous anisotropic compression stress history, shows relatively dear yielding points. 2) Yielding curves defined from ${\eta}$-k and ${\eta}$-W curve show almost perfect ellipse. 3) Directions of plastic strain incremental vector($dv^p/d{\varepsilon}^p$) are not perpendicular to yielding curve.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.12S
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• pp.1232-1236
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• 2003

In this work, we fabricated a gas-sensing device based on porous silicon(PS), and its C-V properties were investigated for sensing alcohol vapor. The structure of the sensor consists of thin Au/oxidized PS/PS/P-Si/Al, where the p-Si is etched anisotropically to be prepared into a membrane-shape. We used alcohol gases vaporized from different alcohol (or ethanol) solutions mixed with pure water at 36$^{\circ}C$, similarly with an alcohol breath measurement to check drunk driving. As the result, I-V curves showed typical tunneling property, and C-V curves were shaped like those of a MIS (metal-insulator-semiconductor) capacitor, where the capacitance in accumulation was increased with alcohol vapor concentration.

• Korean Journal of Materials Research
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• v.27 no.1
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• pp.48-52
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• 2017

In this study, we used I-V spectroscopy, photoconductivity (PC) yield and internal photoemission (IPE) yield using IPE spectroscopy to characterize the Schottky barrier heights (SBH) at insulator-semiconductor interfaces of Pt/$HfO_2$/p-type Si metal-insulator-semiconductor (MIS) capacitors. The leakage current characteristics of the MIS capacitor were analyzed according to the J-V and C-V curves. The leakage current behavior of the capacitors, which depends on the applied electric field, can be described using the Poole-Frenkel (P-F) emission, trap assisted tunneling (TAT), and direct tunneling (DT) models. The leakage current transport mechanism is controlled by the trap level energy depth of $HfO_2$. In order to further study the SBH and the electronic tunneling mechanism, the internal photoemission (IPE) yield was measured and analyzed. We obtained the SBH values of the Pt/$HfO_2$/p-type Si for use in Fowler plots in the square and cubic root IPE yield spectra curves. At the Pt/$HfO_2$/p-type Si interface, the SBH difference, which depends on the electrical potential, is related to (1) the work function (WF) difference and between the Pt and p-type Si and (2) the sub-gap defect state features (density and energy) in the given dielectric.