• Journal of the Korean Geotechnical Society
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• v.24 no.6
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• pp.5-16
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• 2008

This study investigated the existing theoretical backgrounds in order to examine the stability control method of lateral flow caused by the Plasticity of soils when unsymmetrical surcharge works on polluted soils and then compared and analyzed the results measured through model tests. Ultimate bearing power of ML and $ML_{p1}$ and $ML_{p2}$ obtained at surcharge(q)-settlement$(S_v)$ curve showed similar trends to ultimate bearing power obtained from control chart of deflection $(S_v-Y_m)$ by Tominaga.Hashimoto, that of $S_v-(Y_m/S_v)$ by Matsuo.Kawamura and that of $(q/Y_m)-q$ by Shibata.Sekiguchi and so it is considered that it has no problem in actual applicability. ${S_v-(Y_m/S_v)}$ of control chart of $ML_{p1}$ by Matsuo.Kawamura showed smaller value than ultimate bearing capacity value from surcharge-settlement curve $(q-S_v)$. Expression of ML of fracture baseline at stability control charge by Matsuo Kawamura is ${S_v=3.21exp}\{-0.48(Y_m/S_v)\}$ and expression of $ML_{p1}$ is ${S_v=3.26exp}\{-0.96(Y_m/S_v)\}$ and expression of $ML_{p2}$ is ${S_v=6.33exp}\{-0.45(Y_m/S_v)\}$.

• Journal of the Korean Vacuum Society
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• v.4 no.1
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• pp.109-117
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• 1995

고에너지 이온주입시 격자결함의 생성 및 열처리 거동이 double crystal X-ray와 단면 TEM을 사용하여 연구되었다. 3MeV P+ 이온주입한 실리콘의 DCXRD 분석 결과조사량 증가에 따라 모재 내의 변형량은 증가하였다. HRTEM 분석 결과 고에너지 이온주입시 결함은 표면 부근에 희박하고 Rp 부근에 집중되어 있었다. 또한 이온주입 상태의 결함층은 dark band의 형태로 존재하였으며 열처리시 이차결함은 이곳으로부터 생성됨이 관찰되었다. 3MeV P+,$1X1015extrm{cm}^2$의 조건으로 이온주입된 실리콘 시편의 열처리에 따른 X-ray rocking curve 분석을 통하여 열처리 온도가 $550^{\circ}C$에서 $700^{\circ}C$로 증가함에 따라 모재 내부의 최대 변형량이 7X10-4에서 2.9X10-4으로 감소함이 관찰되었다. 특히 $550^{\circ}C$ 열처리한 시편의 경우 표면으로부터$-1.5mu$m 영역에 작은 변형층이 넓게 잔존하였으며 열처리온도를 $700^{\circ}C$로 증가한 경우 제거되었다. 이온주입시 생성된 일차결함들은 $700^{\circ}C$ 열처리시 $60^{\circ}$ 전위와 <112> 막대 모양 결함, $1000^{\circ}C$ 열처리시 <110>방향의 전위루프로 열처리 조건에 따라 여러 가지 모양의 이차결함으로 변화하였다. 고에너지 이온주입에 의해 발생한 이차결함은 고온에서도 안정하여 고온 열처리에 의한 제거가 용이하지 않았다.

• Journal of the Korean earth science society
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• v.37 no.7
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• pp.389-397
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• 2016

In order to investigate the light curve difference in visual and infrared wavelength of ${\delta}$ Scuti variable Bo Lyn, observations were performed using BOAO 1.8m reflecting telescope and an infrared detector, KASINICS, with J, H, and Ks filters. Infrared light curves of total 7 nights were obtained between March and April in 2011, and those were compared to the V-filter light curve to examine the differences in period, time of maximum light, amplitude, and shape. From the periodic analysis of infrared light curve, a single frequency of $f_1=10.712cycle/day$, $P=0.09335{\pm}0.00002days$ was obtained, and there was no difference in the period along different wavelengths. In the infrared light curve, a frequency of $2f_1$ was detected. This frequency well explains the asymmetric shape of light curve, one of the characteristics of high-amplitude ${\delta}$ Scuti variables. We compared the locations of the measured infrared maxima and the predicted maxima of V-filter, finding that the times of maxima were delayed about 0.3 phase at infrared wavelengths. Amplitude ratios were adopted to be ${\Delta}J/{\Delta}V=0.328$, ${\Delta}H/{\Delta}V=0.216$, and ${\Delta}Ks/{\Delta}V=0.211$, with the range of variation being smaller at longer wavelengths. It seems that the differences in the times of maxima and amplitude occurred because the changes in brightness of a pulsating variable star are mainly caused by the change in temperature.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.71-74
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• 2000

Pt/Pb$TiO_3$/$SrTiO_3$/p-Si films were prepared by metallo-organic solution deposition(M0SD) method and investigated its structure and ferroelectric properties. Crystallinity of specimen as a funtions of post annealing temperature and the thickness of $SrTiO_3$(STO) buffer layer was studied using XRD and AFM. Based on C-V and P-E curve, $PbTiO_3$(PTO) capacitors showed good ferroelectric hysteresis arising from the polarization switching properties. When the thickness of ST0 buffer layer between PTO and Si substrate was 260 nrn and the post annealing temperature was $650^{\circ}C$, it was showed that production of the pyrochlore phase due to interdiffusion of Si into FTO was prevented. The dielectric constant of FTO thin films calculated from a maximum Cma in the accumulation region was 180 and the dielectric loss was 0.30 at 100 kHz frequency. The memory window in the C-V curve is 1.6V at a gate voltage of 5V.

• Journal of Animal Science and Technology
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• v.46 no.2
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• pp.251-260
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• 2004

The feasibility and stability of ORP, pH(mV) and DO as a real-time control parameter for SBR process were evaluated in this study. During operation, NBP(nitrogen break point) and NKP(nitrate knee point), which reveal the biological and chemical changes of pollutants, were clearly observed on ORP and pH(mV)-time profiles, and those control points were easily detected by tracking the moving slope changes(MSC). However, when balance of aeration rate to loading rate, or to OUR(oxygen uptake rate), was not optimally maintained, either false NBP was occurred on ORP and DO curves before the appearance of real NBP or specific NBP feature was disappeared on ORP curve. Under that condition, however, very distinct NBP was found on pH(mV)-time profile, and stable detection of that point was feasible by tracking MSC. These results might mean that pH(mV) is superior real-time control parameter for aerobic process than ORP and DO. Meanwhile, as a real-time control parameter for anoxic process, ORP was very stable and more useful parameter than others. Based on these results, a stable real-time control of process can be achieved by using the ORP and pH(mv) parameters in combination rather than using separately. A complete removal of pollutants could be always ensured with this real-time control technology, despite the variations of wastewater and operation condition, as well as an optimization of treatment time and capacity could be feasible.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.31 no.11C
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• pp.1120-1127
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• 2006

[ $GF(2^m)$ ] for elliptic curve cryptosystem. The proposed multiplier uses Gaussian normal basis representation and produces multiplication results at a rate of one per [m/w] clock cycles, where w is the selected we.4 size. We implement the p.oposed design using Xilinx XC2V1000 FPGA device. Our design has significantly less critical path delay compared with previously proposed hard ware implementations.

• Advances in Traditional Medicine
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• v.8 no.4
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• pp.354-364
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• 2008

The present study was carried out to investigate the antihypertensive effect of a folklore herbal formulation (HF) (300mg/kg/day; p.o.) in deoxycorticosterone acetate (DOCA)-salt induced and fructose induced hypertensive rats. In DOCA model, DOCA (15 mg/kg, s.c., twice a week) was administered to unilateral nephrectomized rats for 4 weeks. In fructose model, drinking water was replaced with 10% fructose solution for 6 weeks to induce hypertension. Systolic blood pressure (BP) was measured once every week during the treatment schedule. After completion of treatment schedule, BP and vascular reactivity to various agonists like Noradrenaline, Adrenaline, Phenylephrine and Serotonin (5-hydroxytrptamine; 5-HT) were recorded in rats of both models. A cumulative concentration response curve of 5-HT was carried out in isolated rat fundus strip of the DOCA-salt induced and fructose induced hypertensive rats. The results tend to suggest that HF possesses antihypertensive activity.

• Journal of Sensor Science and Technology
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• v.6 no.5
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• pp.407-413
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• 1997

The crystallized CuPc(copper phthalocyanine) film on a p-type <100> Si substrate is prepared at the substrate temperature of $300^{\circ}C$ by thermal evaporation. X -ray diffraction analysis showed the CuPc film to have a-axis oriented structure. For the measurement of photovoltaic characteristics of the CuPc/Si film and the Si substrate, a transverse current-voltage (I-V) curve is observed. In the dark, the Au/Si junction is shown to be ohmic contact. However, under illumination, a photovoltaic effect is not observed. The I-V curve in the dark indicates that the CuPc film on Si may form an ohmic contact. Since the CuPc film is a p-type semiconductor, the CuPc/p-Si junction has no barrier at the interface. Under illumination, the CuPc/Si junction shows a large photocurrent comparing with that of the wafer. The result indicates that the CuPc layer plays an important role in the photocarrier generation under red illumination (600 nm). The CuPc/Si film shows the photo voltaic characteristics with a short-circuit photocurrent ($J_{sc}$) of $4.29\;mA/cm^{2}$ and an open-circuit voltage ($V_{oc}$) of 12 mA.

• Journal of Astronomy and Space Sciences
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• v.18 no.1
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• pp.55-62
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• 2001

We present VRI CCD photometry of W UMa type binary TY UMa. The light curves show that the secondary minimum is deeper than the primary minimum and the maximum I ($0.^{p}25$)is $0.^{m}023$ brighter than the maximum II ($0.^{p}75$). The V light curve has been analyzed and the photometric solutions have been determined by the method of Wilson & Devinney differential correction. We adopted the spot model to explain the asymetric light curve.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.4 no.1
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• pp.131-138
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• 2000

This paper works on development of an algorithm for mapping of cerebral perfusion parameters using the gamma-variate curve fitting. The signal intensity variate curve according to time measured in each pixel of perfusion MRI is nonlinear, and various hemodynamic parameters are not computed accurately. Levenberg-Marquardt algorithm(LMA), nonlinear optimum algorithm with high convergent speed and stability, is used to compute them. That is, the signal intensity variate curve is fitted by the gamma-variate function. Various hemodynamic parameters - Cerebral Blood Volume(C.B.V), Mean Transit Time(M.T.T), Cerebral Blood Flow(C.B.F), Time-to-Peak(T.T.P), Bolus Arrival Time(B.A.T), Maximum Slope(M.S) - are computed using LMA.