• Title/Summary/Keyword: P-I Characteristics

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Comparison of Proportional, Integral, and P-I Control Systems in Biological Wastewater Treatment Plants (생물학적 하수처리시스템에 적용된 Proportional, Integral 및 P-I 조절 시스템에 대한 비교)

  • Kim, Sungpyo
    • Journal of Korean Society on Water Environment
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    • v.21 no.4
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    • pp.410-415
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    • 2005
  • The main purpose of this study is to evaluate the characteristics of three sets of traditional control methods (proportional, integral, and proportional - integral controls) through lab-scale biological reactor experiments. An increase in proportional gain ($K_c$) resulted in reduced dissolved oxygen (DO) offset under proportional control. An increase in integral time ($T_i$) resulted in a slower response in DO concentration with less oscillation, but took longer to get to the set point. P-I control showed more stable and efficient control of DO and airflow rates compared to either proportional control or integral control. Developed P-I control system was successfully applied to lab-scale Sequencing Batch Reactor (SBR) for treating industrial wastewater with high organic strength.

Resistive Switching Characteristics of Amorphous GeSe ReRAM without Metalic Filaments Conduction

  • Nam, Gi-Hyeon
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.368.1-368.1
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    • 2014
  • We proposed amorphous GeSe-based ReRAM device of metal-insulator-metal (M-I-M) structure. The operation characteristics of memory device occured unipolar switching characteristics. By introducing the concepts of valance-alternation-pairs (VAPs) and chalcogen vacancies, the unipolar resistive switching operation had been explained. In addition, the current transport behavior were analyzed with space charge effect of VAPs, Schottky emission in metal/GeSe interface and P-F emission by GeSe bulk trap in mind. The GeSe ReRAM device of M-I-M structure indicated the stable memory switching characteristics. Furthermore, excellent stability, endurance and retention characteristics were also verified.

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Electrical Characteristics of p+/n Junctions with Cu/Ti-capping/NiSi Electrode (Cu/Ti-cappng/NiSi 전극구조 p+/n 접합의 전기적 특성)

  • Lee Keun-Yoo;Kim Ju-Youn;Bae Kyoo-Sik
    • Korean Journal of Materials Research
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    • v.15 no.5
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    • pp.318-322
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    • 2005
  • Ti-capped NiSi contacts were formed on $p^+/n$ junctions to improve the leakage problem and then Cu was deposited without removing the Ti-capping layer in an attempt to utilize as a diffusion barrier. The electrical characteristics of these $p^+/n$ diodes with Cu/Ti/NiSi electrodes were measured as a function of drive-in RTA(rapid-thermal annealing) and silicidation temperature and time. When drive-in annealed at $900^{\circ}C$, 10 sec. and silicided at $500^{\circ}C$, 100 sec., the diodes showed the most excellent I-V characteristics. Especially, the leakage current was $10^{-10}A$, much lower than reported data for diodes with NiSi contacts. However, when the $p^+/n$ diodes with Cu/Ti/NiSi contacts were furnace-annealed at $400^{\circ}C$ for 40 min., the leakage current increased by 4 orders. The FESEM and AES analysis revealed that the Ti-capping layer effectively prohibited the Cu diffusion, but was ineffective against the NiSi dissociation and consequent Ni diffusion.

Annealing Temperature of Nickel Oxide Hole Transport Layer for p-i-n Inverted Perovskite Solar Cells (P-I-N 역구조 페로브스카이트 태양전지 응용을 위한 Nickel oxide 홀전달층의 열처리 온도 연구)

  • Gisung Kim;Mijoung Kim;Hyojung Kim;JungYup Yang
    • Current Photovoltaic Research
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    • v.11 no.4
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    • pp.103-107
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    • 2023
  • A Nickel oxide (NiOx) thin films were prepared via sol-gel process on a transparent conductive oxide glass substrate. The NiOx thin films were spin-coated in ambient air and subsequently annealed for 30 minutes at temperatures ranging from 150℃ to 450℃. The structural and optical characteristics of the NiOx thin films annealed at various temperatures were measured using X-ray diffraction, field emission scanning electron microscopy, and ultraviolet-visible spectroscopy. After optimizing the NiOx coating conditions, perovskite solar cells were fabricated with p-i-n inverted structure, and its photovoltaic performance was evaluated. NiOx thin films annealed at 350℃ exhibited the most favorable characteristics as a hole transport layer, resulting in the highest power conversion efficiency of 17.88 % when fabricating inverted perovskite solar cells using this film.

The relationship between myofiber characteristics and meat quality of Chinese Qinchuan and Luxi cattle

  • Lu, Xiao;Yang, Yuying;Zhang, Yimin;Mao, Yanwei;Liang, Rongrong;Zhu, Lixian;Luo, Xin
    • Animal Bioscience
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    • v.34 no.4
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    • pp.743-750
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    • 2021
  • Objective: The objectives of this study were to explore the expression patterns of myosin heavy chain (MyHC) genes of different skeletal muscles from Chinese cattle, and to investigate the relationship between myofiber characteristics and meat quality of M. longissimus lumborum (LL), M. psoas major (PM), and M. semimembranosus (SM) from Chinese Luxi and Qinchuan cattle. Methods: Three major muscles including LL, PM, and SM from Chinese Luxi cattle and Chinese Qinchuan cattle were used in this study. The myofiber characteristics were measured by histochemical analysis. The MyHC isoforms expression was evaluated by real-time quantitative polymerase chain reaction. Quality traits including pH value, meat color, cooking loss, Warner-Bratzler shear force (WBSF) and sarcomere length were determined at day 5 postmortem. Results: PM muscle had higher pH value, a* value, sarcomere length and lower WBSF value compared to LL and SM muscles (p<0.05). Numbers of type I myofiber and the relative expression of MyHC I mRNA in PM muscle were higher than those of LL and SM muscles (p<0.05). Myofiber diameter of PM muscle was lower than that of LL and SM muscles, regardless of myofiber types (p<0.05). Conclusion: According to the stepwise linear regression analyses, tenderness was influenced by myofiber characteristics in all three examined muscles. Tenderness of beef muscles from Qinchuan and Luxi cattle could be improved by increasing numbers of type I myofiber.

The Physicochemical and Storage Characteristics of Sausage added Mugwort Powder (쑥 분말 첨가 소시지의 이화학적 및 저장 특성)

  • Han, Kyu-Ho;Choi, Il-Shin;Lee, Chi-Ho
    • Food Science of Animal Resources
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    • v.26 no.3
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    • pp.356-361
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    • 2006
  • This study was carried out to investigate the physico-chemical and storage characteristics of sausages added mugwort powder at $4^{\circ}C$ during 13 days. The composition of fresh sausages was as the following : meat 60 % (w/w), lard 20 %, ice 20 %, salt 1.5 %, sugar 0.5 %, phosphate 0.25 %, mugwort 2 % or 5 %. Sausages were divided into three groups; control group mugwort 0 %, Treatment I mugwort 2 % and Treatment II mugwort 5 %. The pH, TBA(thiobarbituric aid) value, VBN(volatile basic nitrogen), rheology, and sensory evaluation were measured. The changes of pH of all groups were slightly decreased with increasing storage days. But, the significant difference of pH changes were not shown between mugwort 2 % (Treatment I) and mugwort 5 % (Treatment II) groups. The changes of TBA values of all treatments increased during storage periods. TBA values of Treatment I and Treatment II groups were significantly (p<0.05) higher than that of the control group. The change of VBN showed trends to increase during storage periods. The change of VBN of Treatment I was significantly (p<0.05) lower than those of the control and Treatment II. Hardness and brittleness of 2 % and mugwort 5 % groups were significantly (p<0.05) higher than that of the control group. Elasticity and cohesiveness of 2 % and Treatment II were significantly (p<0.05) lower than that of the control group. Also, Treatment I was superior to the other groups by the results of sensory evaluation. Therefore, these results suggest that it may be possible to manufacture sausages added 2 % mugwort powder which can help to increase storage periods, and improve quality of sausage.

High energy swift heavy ion irradiation and annealing effects on DC electrical characteristics of 200 GHz SiGe HBTs

  • Hegde, Vinayakprasanna N.;Praveen, K.C.;Pradeep, T.M.;Pushpa, N.;Cressler, John D.;Tripathi, Ambuj;Asokan, K.;Prakash, A.P. Gnana
    • Nuclear Engineering and Technology
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    • v.51 no.5
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    • pp.1428-1435
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    • 2019
  • The total ionizing dose (TID) and non ionizing energy loss (NIEL) effects of 100 MeV phosphorous ($P^{7+}$) and 80 MeV nitrogen ($N^{6+}$) ions on 200 GHz silicon-germanium heterojunction bipolar transistors (SiGe HBTs) were examined in the total dose range from 1 to 100 Mrad(Si). The in-situ I-V characteristics like Gummel characteristics, excess base current (${\Delta}I_B$), net oxide trapped charge ($N_{OX}$), current gain ($h_{FE}$), avalanche multiplication (M-1), neutral base recombination (NBR) and output characteristics ($I_C-V_{CE}$) were analysed before and after irradiation. The significant degradation in device parameters was observed after $100MeV\;P^{7+}$ and $80MeV\;N^{6+}$ ion irradiation. The $100MeV\;P^{7+}$ ions create more damage in the SiGe HBT structure and in turn degrade the electrical characteristics of SiGe HBTs more when compared to $80MeV\;N^{6+}$. The SiGe HBTs irradiated up to 100 Mrad of total dose were annealed from $50^{\circ}C$ to $400^{\circ}C$ in different steps for 30 min duration in order to study the recovery of electrical characteristics. The recovery factors (RFs) are employed to analyse the contribution of room temperature and isochronal annealing in total recovery.

Electrical characteristics of p-PEDOT/n-GZO heterojunction (p-PEDOT/n-GZO heterojunction의 전기적 특성)

  • Lee, Jae-Sang;Park, Dong-Hoon;Koo, Sang-Mo;Lee, Sang-Yeol
    • Proceedings of the KIEE Conference
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    • 2009.07a
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    • pp.1332_1333
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    • 2009
  • The electrical properties of an inorganic/organic heterojunction has been investigated by spin coating the p-type polymer poly(3,4 ethylenedioxythiophene) : poly(styrenesulfonate) (PEDOT:PSS) on an n-type gallium doping zinc oxide (GZO) film. Current-voltage (I-V) characteristics of the fabricated heterojunction diodes have a good rectifying characteristics. The barrier height is calculated 0.8 eV.

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Restriction Fragment Length Ploymorphism of PCR Amplified Ribosomal DNA Among Korean Isolates of Phytophthora

  • Hong, Seung-Beom;Jee, Hyeong-Jin;Lee, Seung-Im;Go, Seung-Joo
    • The Plant Pathology Journal
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    • v.15 no.4
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    • pp.228-235
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    • 1999
  • Genetic diversity of ninety-five Korean isolates of Phytophthora was investigated on the basis of PCR-RFLP of ribosomal DNA. The isolates were previously identified as following fifteen species by mycological and cultural characteristics; P. boehmeriae, P. cactorum, P. cambivora, P. capsici, P. cinnamoni, P. citricola, P. citrophthora, P. cryptogea, P. drechsleri, P. erythroseptica, P. infestans, P. megasperma, P. nicotianae, P. palmivora and P. sojae. The regions of small subunit (SSU) and internal transcribed spacer (ITS) of rDNA were amplified with primer pair, NS1 and ITS4, by polymerase chain reaction (PCR) and digested with nine restriction enzymes. P. boehmeriae, P. cactorum, P. cambivora, P. capsici, P. cinnamomi, P. citricola, P. citrphthora, P. infestans, P. nicotianae and P. palmivora showed specific band patterns for each species. However, P. sojae and P. erythroseptica presented identical band patterns and P. cryptogea, P. drechsleri and P. megasperma were divided into six groups, which were not compatible with delineation of the species. A group originated from cucurbits showed distinct band patterns from other groups, but the other five groups were closely related within 96.0% similarity, forming one complex group. Consequently, Korean isolates of Phytophthora were divided into thirteen genetic groups and each group was readily differentiated by comparing digestion patterns of AvaII, HaeIII, MboI, HhaI and MspI. Therefore, PCR-RFLP of rDNA using the five enzymes can be used to differentiate or identify the Phytophthora species reported in Korea so far.

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The Fabrication and Electrical Characteristics of Planar Multi-Quantum well (MQW) Avalanche, MQW-pn, and p-i-n Photodiode Implantd with Oxygen for Electrical Isolation (Oxygen 이온 주입의 전기적 고립을 통한 평면형 다중 양자 우물 구조의 애벌런치 & pn 및 p - i- n광 다이오드의 제작 및 전기적 특성)

  • ;;D.Sivco;D.L.Jacobsen;A.Y.cho
    • Journal of the Korean Institute of Telematics and Electronics D
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    • v.34D no.9
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    • pp.43-49
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    • 1997
  • The dependence of the electrical properties in planar MQW - APD & pn, and p - i - n photodiode implanted with oxygen on the annealing emperatures and ion dose has been investigated. The oxygen implantation was performed for inter-device isolation. The leakage current of as-impanted p-i-n photodiode obtained was less than 50 nA. An annelaing temperature dependence study shows an abrupt increase of leakge current at 600.deg.C for all devices under study. This indicates that donor complex centers introduced by the chemical activity of oxygen increase with increasing annelaing temperatures. Furthermore, leakage current was highly correlated with oxygen dose due to th eimplanted related defects.

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