• 한국전자파학회:학술대회논문집
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• 한국전자파학회 2005년도 종합학술발표회 논문집 Vol.15 No.1
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• pp.111-114
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• 2005

The isolation performance of the S-band single-pole single-throw (SPST) monolithic microwave integrated circuit (MMIC) switch with two different RF-interconnection approaches, microstrip and grounded coplanar waveguide (GCPW) lines, are investigated. On-to-off isolation is improved by 5.8 dB with the GCPW design compared with the microstrip design and additional improvement of 6.9dB is obtained with the coplanar wire-bond interconnection (CWBI) at 3.4 GHz. The measured insertion loss and third-order inter-modulation distortion (IMD3) are less than 2.43 dB over 2.5 CHz $\sim$ 4 GHz and greater than 64 dBc.

• 조명전기설비학회논문지
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• 제26권11호
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• pp.48-53
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• 2012

In this paper designed J-class amplifier that have high efficiency using parasitic of pHEMT. Measured results of the designed J-class amplifier is maxmum output power of 31.5dBm and gain of 16.5dB, minimum output power of 29.8dBm. when input power 15dBm. Maxmum drain efficiency is 76.2% at 2.95GHz, maxmum drain efficiency is 61%. The J-class amplifier has average gain of 15.35dB and average efficiency of 35%.

• JSTS:Journal of Semiconductor Technology and Science
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• 제6권3호
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• pp.182-188
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• 2006

An artificial neural network model for the microwave characteristics of an InGaAs/InP hemt for 70 nm gate length has been developed. The small-signal microwave parameters have been evaluated to determine the transconductance and drain-conductance. We have further investigated the frequency characteristics of the device. The neural network training have been done using the three layer architecture using Levenberg-Marqaurdt Backpropagation algorithm. The results have been compared with the experimental data, which shows a close agreement and the validity of our proposed model.

• 한국전자파학회:학술대회논문집
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• 한국전자파학회 2000년도 종합학술발표회 논문집 Vol.10 No.1
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• pp.216-219
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• 2000

A Ka Band 3-stage MMIC (Monolithic Microwave Integrated Circuits) LNA(Low Noise Amplifiers) has been designed. The MMIC LNA consists of two single-ended type amplication stapes and one balanced type amplication stage to satisfy noise figure characteristics and high gain and amplitude linearity. The 0.15um pHEMT has been used to provide a ultra low noise figure and high gain amplification. Series and Shunt feedback circuits were inserted to ensure high stability over frequency range of DC to 80 GHz. The size of designed MMIC LNA is 3100mm ${\times}$ 2400um(7.44$\textrm{mm}^2$). The on wafer measured noise figure of the MMIC LNA is less than 2.0 dB over frequency range of 22 GHz to 30 GHz.

• 한국인터넷방송통신학회논문지
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• 제8권2호
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• pp.67-73
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• 2008

Reconfigurable radio technology is needed to reconstruct frequency and modem functionality, which can be different within various regions. In addition, it makes it possible for a single mobile handset to support various standards of wireless communication, and thus plays a key role inmobile convergence. A MMIC VCO(Monolithic Microwave Integrated Circuit Voltage Controlled Oscillator) has been developed to produce high power and wide bandwidth that adapts the Clapp-Gouriet type oscillator for series feedback. We were fabricated based on the 0.15um pHEMT from TRW. The MMIC VCO was connected to an alumina substrate on the carrier for testing. This MMIC VCO module shows good performance when compared with existing VCOs. Futhermore, it has potential as a reconfigurable MMIC VCO for ubiquitous communications such as LMDS (Local Multipoint Distribution Service), VSAT, Point to Point Radio and SATCOM.

• 한국전자파학회:학술대회논문집
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• 한국전자파학회 2003년도 종합학술발표회 논문집 Vol.13 No.1
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• pp.322-325
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• 2003

A 7/21GHz frequency tripler, using a commercially available packaged pHEMT, was designed and fabricated on 15mil RO3003 substrate. Frequency conversion is realized using the third harmonic current of an class B amplifier with rejection feedback at fundamental with optimum load conductance at the third harmonic. The fabricated frequency tripler has achieved a conversion loss of 0.7dB for an input power of 0dBm at 21GHz. The experimental results show good agreement with the harmonic balance simulation.

• Journal of Electrical Engineering and Technology
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• 제8권3호
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• pp.610-612
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• 2013

A novel balanced distributed amplifier (DA) was proposed using novel impedance transforming MEMS baluns. The impedance transforming MEMS balun is matched to $50{\Omega}$ at one input port and $25{\Omega}$ at two output ports. It is based on the electric field mode-change method, thus it is strongly independent of frequency and very compact. The novel balanced DA consists of two $25{\Omega}$-matched DAs and these are combined by $50{\Omega}$-to-$25{\Omega}$ baluns. Theoretically, it has two times wider bandwidth and power capability than the conventional DA. So as to verify the proposed concept, we designed and fabricated a conventional DA and the proposed one using 0.15-${\mu}m$ GaAs pHEMT technology.

• 한국통신학회논문지
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• 제26권8B호
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• pp.1035-1040
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• 2001

SNU-ISRC 0.25$\mu\textrm{m}$ pHEMT 표준 공정을 사용하여 Ka-band에서 동작하는 0.2W급 MMIC CPW 전력증폭기를 설계, 제작하였다. 기존의 MMIC 공정에서 사용되는 마이크로스트립 전송선 대신 CPW 전송선을 사용함으로써 보다 간단하고 저가의 공정이 가능하였다. 전력증폭기의 설계에서는 보다 넓은 주파수 대역에서 원하는 출력전력을 얻기 위해서 출력단을 Wilkinson coupler를 사용하였는데, 일반적으로 Wilkinson coupler에 사용되는 50Ω 특성임피던스 전송선 대신에 25Ω 특성임피던스 전송선을 사용하여 좋은 출력단 전력 정합과 출력 반사손실을 동시에 얻을 수 있었다. 제작된 전력증폭기의 측정결과, 주파수 27GHz에서 출력전력 23.4dBm과 Power-added Efficiency 21.7%의 결과를 보였다.

• Journal of electromagnetic engineering and science
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• 제14권4호
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• pp.342-345
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• 2014

An active frequency doubler monolithic microwave integrated circuit (MMIC) for E-band transceiver applications is presented in this letter. This MMIC has been fabricated in a commercial $0.1-{\mu}m$ GaAs pseudomorphic high electron mobility transistor (pHEMT) process on a 2-mil thick substrate wafer. The fabricated MMIC chip has been measured to have a high output power performance of over 13 dBm with a high fundamental leakage suppression of more than 38 dBc in the frequency range of 71 to 86 GHz under an input signal condition of 10 dBm. A microstrip coupled line is used at the output circuit of the doubler section to implement impedance matching and simultaneously enhance the fundamental leakage suppression. The fabricated chip is has a size of $2.5mm{\times}1.2mm$.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2003년도 통신소사이어티 추계학술대회논문집
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• pp.60-63
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• 2003

This paper describes the design and the simulation of a V-band single pole double throw (SPDT) FET switch fur millimeter-wave applications using drain impedance transformation network with CPW transmission line. The designed switch has about 10% bandwidth at 60GHz. Insertion loss is better than 3dB fur the ON state and Isolation is larger than 30dB fer the OFF state. The maximum isolation is 43.4dB at 60GHz with input power of 10dBm. The yield analysis is done considering the effects of pHEMT variations.