• 제목/요약/키워드: P-E Hysteresis

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BNT-ST 세라믹스의 저온 소결과 강유전 및 압전 특성 (Low Temperature Sintering of (Bi1/2Na1/2)TiO3-SrTiO3 Ceramics and Their Ferroelectric and Piezoelectric Properties)

  • 권현희;황가희;천채일;채기웅
    • 센서학회지
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    • 제32권4호
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    • pp.238-245
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    • 2023
  • 0.75(Bi1/2Na1/2)TiO3-0.25SrTiO3 (BNT-25ST) ceramics with high densities were successfully prepared at a sintering temperature of 1,000℃ by adding a mixture of 1 mol% CuO and 0.5 mol% Na2CO3 or 0.5 mol% CuO and 0.25 mol% Na2CO3. Double polarization-electric field (P-E) hysteresis curves and sprout-shaped bipolar strain-electric field (S-E) hysteresis curves with small negative strains were observed in the pristine and CuO-added BNT-25ST ceramics whereas the Na2CO3-added sample showed similar P-E and S-E curves to a typical ferroelectric. The pristine BNT-25ST ceramics showed an extremely large strain and a large-signal piezoelectric strain constant (d33*): 0.287 % at 80 kV/cm and 850 pm/V at 20 kV/cm. Similar values, 0.248 % at 80 kV/cm and 655 pm/V at 20 kV/cm, were obtained in the CuO-added sample. However, the pristine and CuO-added samples showed large hysteresis in unipolar S-E curves at an electric field of less than 20 kV/cm. The Na2CO3-added sample showed smaller values of the strain and d33* but displayed a linear change and small hysteresis in the unipolar S-E curve. The co-added sample with CuO and Na2CO3 displayed intermediate P-E and S-E hysteresis curves.

유전 히스테리시스 특성 측정장치의 연구 개발 (A Study on the Development of a System for Measuring Dielectric Hysteresis)

  • 강대하
    • 조명전기설비학회논문지
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    • 제12권1호
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    • pp.58-68
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    • 1998
  • 본 연구는 컴퓨터제어 유전 히스테리시스 특성 측정장치를 개발하기 위하여 수행한 것이다. 이 측정장치는 파형 발생부, 고전압 증폭부, 측정부, 데이터 취득부 및 관련 제어회로로 구성되어 있으며 컴퓨터에 인터페이싱한 장치이다. 인가전압 및 주파수가 P.C에 의해 제어되며 측정 데이터를 P.C의 RAM에 저장할 수 있으므로 데이터의 분석 및 그래픽이 매우 편리하다. 본 장치의 정도를 시험하기 위하여 시중의 마이카 콘덴서 및 스타롤 콘덴서에 대한 정전용량을 고전압을 인가하여 측정하였으며 그 결과 정격값과 잘 일치하였다. PZT 세라믹 시료에 대한 시험에서 단일주파수의 전계를 인가함으로써 전형적인 D-E 히스테리시스 곡선을 얻을 수 있었으며, 이중주파수의 전계를 인가함으로써 $\varepsilon-E$ 및 D-E 히스테리시스 곡선을 동시에 측정할 수 있었다.

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반응성 스퍼터링법으로 형성시킨 PZT 커패시티의 P-E 이력곡선의 이동현상 및 피로 특성 연구 (Study on the Shift in the P-E Hysteresis Curve and the Fatigue Behavior of the PZT Capacitors Fabricated by Reactive Sputtering)

  • 김현호;이원종
    • 한국전기전자재료학회논문지
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    • 제18권11호
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    • pp.983-989
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    • 2005
  • [ $PZT(Pb(Zr,Ti)O_3)$ ] thin films were deposited by multi-target reactive sputtering method on $RuO_2$ substrates. Pure perovskite phase PZT films could be obtained by introducing Ti-oxide seed layer on the $RuO_2$ substrates prior to PZT film deposition. The PZT films deposited on the $RuO_2$ substrates showed highly voltage-shifted hysteresis loop compared with the films deposited on the Pt substrates. The surface of $RuO_2$ substrate was found to be reduced to metallic Ru in vacuum at elevated temperature, which caused the formation of oxygen vacancies at the initial stage of PZT film deposition and gave rise to the voltage shift in the P-E hysteresis loop of the PZT capacitor. The fatigue characteristics of the PZT capacitors under unipolar wane electric field were different from those under bipolar wane. The fatigue test under unipolar wane showed the increase of polarization. It was thought that the ferroelectric domains which had been pinned by charged defects such as oxygen vacancies and the charged defects were reduced in number by combining with the electrons injected from the electrode under unipolar wave, resulting in the relaxation of the ferroelectric domains and the increase of polarization.

Ti와 W이 첨가된 SBT 세라믹스의 강유전 특성 (Ferroelectric Properties of Ti-Doped and W-Doped SBT Ceramics)

  • 천채일;김정석
    • 한국세라믹학회지
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    • 제41권5호
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    • pp.401-405
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    • 2004
  • 순수한 SrB $i_2$T $a_2$$O_{9}$ 세라믹스와 도너와 억셉터가 치환된 S $r_{0.99}$B $i_2$(T $a_{0.99}$ $W_{0.01}$)$_2$$O_{9}$ 와 SrB $i_2$(T $a_{0.99}$ $Ti_{0.01}$)$_2$ $O_{8.99}$ 세라믹스를 제조하고 미세구조, 강유전 P-E 이력특성, 상전이 온도를 조사하였다. 입자크기는 SrB $i_2$T $a_2$$O_{9}$ 세라믹스의 강유전 이력곡선에는 영향을 주지 않았다. 도너를 치환한 S $r_{0.99}$B $i_2$(T $a_{0.99}$ $W_{0.01}$)$_2$$O_{9}$ 세라믹스는 순수한 SrB $i_2$T $a_2$$O_{9}$ 세라믹스보다 잔류 분극이 크고 더욱 포화된 강유전 P-E 이력곡선을 보였으며, 억셉터가 치환된 SrB $i_2$(T $a_{0.99}$ $Ti_{0.01}$)$_2$ $O_{8.99}$ 세라믹스는 잔류분극이 크게 감소하여 가운데가 잘록한 모양을 보였다. 도너가 치환된 S $r_{0.99}$B $i_2$(T $a_{0.99}$ $W_{0.01}$)$_2$$O_{9}$ 세라믹스의 강유전 분극이 순수한 SrB $i_2$T $a_2$$O_{9}$ 세라믹스보다 더 큰 것은 Sr 공공의 생성에 의하여 분역벽 이동이 용이해졌기 때문이다.동이 용이해졌기 때문이다.동이 용이해졌기 때문이다.동이 용이해졌기 때문이다.

Core Loss Analysis of Non-oriented Electrical Steel Under Magnetic Induction Including Higher Harmonics

  • Cho, Chuhyun;Son, Derac;Cho, Youk
    • Journal of Magnetics
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    • 제6권2호
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    • pp.66-69
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    • 2001
  • The actual magnetic induction waveform of cores in electrical machines is not sinusoidal i.e. higher harmonics are always included. Thus the core loss in actual electrical machines is different from the core loss which is measured by the standard method, because the waveform of magnetic induction should be sinusoidal in the standard testing method. Core loss analysis under higher harmonic induction is always important in electric machine design. In this works we measured the core loss when a hysteresis loop has only one period of an ac minor loop of higher harmonic frequency, depending on the position of the ac minor loop of relative to the fundamental harmonic frequency. From this experiment, the core loss P(B/sub 0/f/sub 0/, B/sub h/, nf/sub 0/)) under a higher harmonic magnetic induction B/sub h/ could be expressed by the linear combination the core loss at fundamental harmonic frequency P/sub c/(B/sub 0/, f/sub 0/), the core loss of ac minor loop at zero induction region of the major hysteresis loop P/sub cL/ (B/sub h/, nf/sub 0/), and the core loss of an ac minor loop in the high induction region of the major hysteresis loop P/sub cH/ (B/sub h/, nf/sub 0/) i.e., P/sub c/, (B/sub 0/, f/sub 0/, B/sub h/, nf/sub 0/)=P/sub c/ (B/sub 0/, f/sub 0/,)+(n-1)[k₁(B/sub 0/) P/sub cL/ (B/sub h/, nf/sub 0/)+(1-k₁(B/sub 0/)) P/sub cH/ (B/sub h/, nf/sub 0/)]. This will be useful formula for electrical machine designers and one of effective methods to predict core loss including higher harmonic induction.

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광학적 방법을 이용한 유중 부분방전 신호 검출을 위한 신기술 개발 (A New Technique for Partial Discharge Signal Detection in Oil using Op)

  • 최성수;강원종;장용무;이정헌;김정태;구자윤
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1997년도 하계학술대회 논문집 E
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    • pp.1705-1707
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    • 1997
  • In this work, a possible new PD de technique, based on the electro-optic effect(P effect), has been proposed. The refractive index ellipsoid of EO crystal, as $LiNbO_3$, is changed by both the externally a electric field and its hysteresis loop of which effect on this hysteresis loop gives rise t discrepancy of index variation. Therefore, an eq regarding the phase variation of modulated beam through $LiNbO_3$ crystal under applied e field, is newly proposed considering the influen hysteresis characteristics. For this purpose generated from needle-plane electrode in oil has detected by use of $LiNbO_3$ cell and analyzed b equation. As a result, it is observed that PD measu phase intervals are limited by the cr characteristics such as asymmertrical P-E hyst and half-wave voltage.

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Ar/Cl$_2$ 유도결합플라츠마 식각 후 SBT 박막의 전기적 특성 (Electrical Properties of SBT Thin Films after Etching in Cl$_2$/Ar Inductively Coupled Plasma)

  • 이철인;권동표;깅창일
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2002년도 하계학술대회 논문집
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    • pp.58-61
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    • 2002
  • SBT thin films were etched at different content of Cl$_2$in Cl$_2$/Ar plasma. We obtained the maximum etch rate of 883 ${\AA}$/min at Cl$_2$(20%)/Ar(80%). As Cl$_2$ gas increased in Cl$_2$/Ar plasma, the etch rate decreased. The maximum etch rate may be explained by variation of volume density for Cl atoms and by the concurrence of two etching mechanisms such as physical sputtering and chemical reaction with formation of low-volatile products, which can be desorbed only by ion bombardment. The variation of volume density for Cl, F and Ar atoms and ion current density were measured by the optical emission spectroscopy and Langmuir probe. To evaluate the physical damage due to plasma, X-ray diffraction and atomic force microscopy analysis carried out. After etching process, P-E hysteresis loops were measured by ferroelectric workstation.

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전계 인가에 따른 PLZT 강유전체의 유전특성 및 전기열량 효과 (Dielectric Properties and Electrocaloric Effects of PLZT Ferroelectric Ceramics by Applying Electric Fields)

  • 김유석;류주현;정영호
    • 한국전기전자재료학회논문지
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    • 제29권3호
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    • pp.164-167
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    • 2016
  • In this study, in order to develop relaxor ferroelectric ceramics for refrigeration device application with large electrocaloric effect, PLZT(8/65/35) composition was fabricated using conventional solid-state method. The Curi temperature of this composition PLZT ceramics was $230^{\circ}C$, and the P-E hysteresis loops of the PLZT ceramics as a fuction of temperature became slim by degrees with higher temperatures. The maximum value of ${\Delta}T$ of $0.243^{\circ}C$ in ambient temperature of $215^{\circ}C$ with 30 kV/cm was appeared. It is considered that PLZT ceramics possess the possibility of refrigeration device application.

강유전막의 잔류 분극 상태와 내부 전계가 Pt/Pb(Zr,Ti)O3/Pt 커패시터의 수소 열화 특성에 미치는 영향 (Effects of Remanent Polarization State and Internal Field in Ferroelctric Film on the Hydrogen-induced Degradation Characteristics in Pt/Pb(Zr, Ti)O3/Pt Capacitor)

  • 김동천;이강운;이원종
    • 한국재료학회지
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    • 제12권1호
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    • pp.75-81
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    • 2002
  • The ferroelectric properties of Pb(Zr,Ti)O$_3$[PZT] films degrade when the films with Pt top electrodes are annealed in hydrogen containing environment. This is due to the reduction activity of atomic hydrogen that is generated by the catalytic activity of the Pt top electrode. At the initial stage of hydrogen annealing, oxygen vacancies are formed by the reduction activity of hydrogen mainly at the vicinity of top Pt/PZT interface, resulting in a shift of P-E (polarization-electric field) hysteresis curve toward the negative electric field direction. As the hydrogen annealing time increases, oxygen vacancies are formed inside the PZT film by the inward diffusion of hydrogen ions, as a result, the polarization degrades significantly and the degree of P-E curve shift decreases gradually. The direction and the magnitude of the remnant polarization in the PZT film affect the motion of hydrogen ions which determines the degradation of polarization characteristics and the shift in the P-E hysteresis curve of the PZT capacitor during hydrogen annealing. When the remnant polarization is formed in the PZT film by applying a pre-poling voltage prior to hydrogen annealing, the direction of the P-E curve shift induced by hydrogen annealing is opposite to the polarity of the pre-poling voltage. The hydrogen-induced degradation behavior of the PZT capacitor is also affected by the internal field that has been generated in the PZT film by the charges located at the top interface prior to hydrogen annealing.

Si/MgO 기판에 증착된 BaTiO$_3$ 박막의 구조 및 전기적 특성 (The Structural and electrical Properties of $BaTiO_3$ Thin Films Deposited on Si/MgO Substrates)

  • 홍경진;김태성
    • 한국전기전자재료학회논문지
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    • 제11권12호
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    • pp.1108-1114
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    • 1998
  • $BaTiO_3$ thin films preferred c-axis orientation for the potential application of ferroelectric memory devices were deposited on silicon substrates(100) by RF sputtering and annealed at 800 and 900[$^{\circ}C$] in air. The BT(100)/BT(110) peak ratio of the sputtered sample was decreased with post-annealing in air. According to increasing with annealing temperature and time, the peak ratio of BT(100)/BT(110) was decreased and the surface density of thin film was high. Dielectric characteristics of $BaTiO_3$ thin film was measured as a function of annealing temperature and frequency. The dielectric constants were increased with annealing and decreased with frequency by space charge polarization and dipole polarization below 600[kHz]. The remanent polarization and coercive field in P-E hysteresis loop of $BaTiO_3$thin film were increased with the annealing temperature in air. The remanent polarization and coercive filed annealed at 800[$^{\circ}C$] for 1hr were 1.2[$\mu$C/$cm^2$] and 200[kV/cm]

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