• Journal of Powder Materials
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• v.17 no.5
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• pp.404-408
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• 2010

The effects of high energy ball-milling (HEBM) on the sintering behavior and piezoelectric properties of 0.1 wt% $Li_2CO_3$ doped 0.8Pb($Mg_{1/3}Nb_{2/3}$)$O_3$-0.2Pb($Zr_{0.475}Ti_{0.525}$)$O_3$ (PMN-PZT) ceramics were investigated. It was found that HEBM treatment was quite effective to reduce the average particle size down to 300 nm, leading to increased density as well as enhanced piezoelectric properties of a sintered specimen even though prolonged HEBM resulted in unwanted secondary phases that caused a degradation of piezoelectric properties. The dielectric constant ($\varepsilon_r$), piezoelectric coupling factor ($k_p$) and piezoelectric constant $d_{33}$ of 0.1 wt% $Li_2CO_3$ doped PMN-PZT ceramics prepared via HEBM for 10 h reached 2040, 0.68 and 554 pC/N, respectively.

• Journal of Microbiology and Biotechnology
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• v.14 no.2
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• pp.250-255
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• 2004

The aim of this work was to investigate the adsorption isotherm and kinetic model for the biosorption of lead $(Pb^{2+})$ by Rhodotorula aurantiaca and to examine the environmental factors for this metal removal. Within five minutes of contact, $Pb^{2+}$ sorption reached nearly 86% of the total $Pb^{2+}$ sorption. The optimum initial pH value for removal of $Pb^{2+}$ was 5.0. The percentage sorption increased steeply with the biomass concentration up to 2 g/l and thereafter remained more or less constant. The Langmuir sorption model provided a good fit throughout the concentration range. The conformity of these data to the Langmuir model indicated that biosorption of $Pb^{2+}$ by R. aurantiaca could be characterized as a monolayer, single-site type phenomenon with no interaction between ions adsorbed in neighboring sites. The maximum $Pb^{2+}$ sorption capacity $(q_{max})$ and Langmuir constant (b) were 46.08 mg/g of biomass and 0.04 l/mg, respectively. The pseudo second-order equation was well fitted to the experimental data. The correlation coefficients for the linear plots of t/q against t for the second-order equation were 0.999 for all the initial concentrations of biosorbent for contact times of 180 min. The theoretical $q_{eq}$ value was very close to the experimental $q_{eq}$ value.

• Tribology and Lubricants
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• v.30 no.2
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• pp.99-107
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• 2014

Fretting corrosion tests are conducted with a constant displacement amplitude using silver-plated brass coupons to investigate the effect of contact pressure on fretting corrosion. Three behaviors are identified based on the change in electric resistance and friction coefficient during the fretting test period, and the identified behaviors are dependent on the magnitude of the applied load. The failure cycle ($N_f$) with an electric resistance of 0.1 D cannot be achieved due to the adhesion behavior of the metal and metal contact under the higher applied load of 0.45 N. This suggests that an average contact pressure higher than 159 MPa for the silver-coated connector is desirable to gain an almost infinite lifetime. The relationship between the electric contact resistance (R) and the average contact pressure (p) can be written as $p=106.2{\times}{\Omega}^{-1.5}$.

• Bulletin of the Korean Chemical Society
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• v.23 no.10
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• pp.1459-1462
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• 2002

The kinetics of the addition of X-substituted benzylamines (BA) to Y-substituted Benzylideneacetylacetones (BAA) have been investigated in acetonitrile at $25.0^{\circ}C$. The reaction is studied under pseudo-first-order conditions by keeping a large excess of BA over BAA. The addition of BA to BAA occurs in a single step in which the addition of BA to $C_\alpha$ of BAA and proton transfer from BA to $C_\beta$ of BAA take place concurrently with a four-membered cyclic transition state structure. The magnitude of the Hammett ($p_X$) and Bronsted ($\beta_x$) coefficients are rather small suggesting an early tansition state (TS). The sign and magnitude of the cross-interaction constant, $p_{XY}$ (= -0.49), is comparatible to those found in the normal bond formation processes in the $S_N2$ and addition reactions. The normal kinetic isotope effect ($K_H/K_D$ > 1.0) and relatively low $\Delta$H^{${\neq}$}$ and large negative $\Delta$S^{${\neq}$}$ values are also consistent with the mechanism proposed.

• Journal of the Korean Ceramic Society
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• v.35 no.10
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• pp.1070-1077
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• 1998

Effect of current collecting layer on the cathode was characterized by AC impedance spectroscopy at 800$^{\circ}C$ under flowing air. LSM-YSZ composite cathode showed lower polarization resistance due to the in-crease of triple phase (LSM/YSZ/Pore) boundary length by incorporation of YSZ. Ohmic resistance {{{{ {R }_{1 } }} of LSM-YSZ was higher than that of pure LSM however because in-plane resistance of the cathode was fair-ly high due to its high specific resistivity. To reduce the in-plane resistance of LSM-YSZ cathode cathode side current collecting layer was required. Ohmic resistance {{{{ {R }_{1 } }} was reduced after forming LSM current col-lecting layer on the LSM-YSZ cathode. In case of pure LSM cathode the formation of Pt, or LSCO current collecting layer reduced polarization resistance {{{{ {R }_{p } }} but ohmic resistance {{{{ {R }_{1 } }} was relatively constant. After annealing of LSM cathode with Pt current collector at higher temperature polarization resistance {{{{ {R }_{p } }} was in-creased but ohmic resistance {{{{ {R }_{1 } }} was constant. These phenomena indicate that Pt or LSCo current col-lecting layers act as a catalytic layer for oxygen reduction of pure LSM cathode. LSCO current collector was effective in reducing the ohmic and polarization resistance of LSM-YSZ cathode.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.11a
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• pp.60-63
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• 1997

Dieletric ailed piezoelectric properties of Pb[$Zr_{0.45}$/ $Ti_{0.5-x}$/L $u_{x}$ (M $n_{1}$3//S $b_{2}$3)$_{0.05}$] $O_3$(0$\leq$x $\leq$0.03) were investigated. The partial substitution of $Ti^{4+}$ by a L $u^{3+}$ permitted improvement of the piezoelectric constant( $d_{33}$ ), electromechanical coupling factor ( $k_{p}$ ) and dielectric constant($\varepsilon$$_{33}$ /Sup T/). The dielectric loss(tan $\delta$ ) increased and mechanical quality factor(Qm) decreased with an increase of x were observed. A new piezoelectric material for actuator application was developed at x=0.02 with $d_{33}$ =370$\times$10$^{-2}$ /C/N, $k_{p}$ =58.5%, $\varepsilon$$_{33}$ $^{T}$ =1321, $Q_{m}$ =714 and tan $\delta$ =0.98%.%..%.%.

• Proceedings of the KIEE Conference
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• 2005.07c
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• pp.1924-1926
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• 2005

Poly(methyl methacrylate) (PMMA) is one of the promising representive of polymer gate dielectric for its high resistivity and sutible dielectric constant. PMMA (Mw=96700) films were prepared on p-Si by spin coating method. PMMA were coated compactively and flatly as observes by AFM. MIS(Al/PMMA/p-Si) structure was made and capacitance-voltage (C-V) and current-voltage (I-V) measurements were done with PMMA films for repeated annealing cycles at $100^{\circ}C$. 1-V measured at various delay times $(0{\sim}20sec)$ showed little change and the absence of hysteresis in the I-V characteristics with delay times, which eliminate the possibility of deep traps in the PMMA films. The observed thermal stability, smooth surfaces, dielectric constant, I-V behavior implies PMMA formed by spin coating can be used as an efficient gate dielectric layer in OTFTs.

• Proceedings of the KIEE Conference
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• 2005.07c
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• pp.1881-1883
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• 2005

In this study, PZT thin films were fabricated using sol-gel Processing onto $Si/SiO_2/Ti/Pt$ substrates. PZT sol with different Zr/Ti ratio(20/80, 30/70, 40/60, 52/48) were prepared, respectively. The films were fabricated by using the spin-coating method on substrates. The films were heat treated at $450^{\circ}C$, $650^{\circ}C$ by rapid thermal annealing(RTA). The preferred orientation of the PZT thin films were observed by X-ray diffraction(XRD), and Scanning electron microscopy(SEM). All of the resulting PZT thin films were crystallized with perovskite phase. The fine crystallinity of the films were fabricated. Also, we found that the ferroelectric properties from the dielectric constant of the PZT thin films were over 600 degrees, P-E hysteresis constant. And the leakage current densities of films were lower than $10^{-8}\;A/cm^2$. It is concluded that the PZT thin films by sol-gel process to be convinced of application for ferroelectric memory device.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.6
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• pp.332-336
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• 2016

In this study, in order to develop the composition ceramics for ultrasonic sensor with high $d_{33}*g_{33}$, $Pb_{1-3x/2}Bix(Mg_{1/2}W_{1/2})_{0.03}(Ni_{1/3}Nb_{2/3})_{0.09}(Zr_{0.5}Ti_{0.5})_{0.88}O_3$(PMW-PNN-PZT) system ceramics were prepared using CuO as sintering aids. And then, their microstructure, piezoelectric and dielectric characteristics were systemetically investigated with bismuth substitution. The PMW-PNN-PZT ceramic specimens could be sintered at sintering temperature of $940^{\circ}C$ by adding sintering aids. At x=0.015 specimen, the density, electromechanical coupling factor($k_p$), dielectric constant, piezoelectric constant($d_{33}$) and piezoelectric figure of merit($d_{33}*g_{33}$) indicated the optimal properties of $7.90g/cm^3$, 0.67, 2,511, 628 pC/N, and $17.7pm^2/N$, respectively, for duplex ultrasonic sensor application.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.71-74
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• 2000

Pt/Pb$TiO_3$/$SrTiO_3$/p-Si films were prepared by metallo-organic solution deposition(M0SD) method and investigated its structure and ferroelectric properties. Crystallinity of specimen as a funtions of post annealing temperature and the thickness of $SrTiO_3$(STO) buffer layer was studied using XRD and AFM. Based on C-V and P-E curve, $PbTiO_3$(PTO) capacitors showed good ferroelectric hysteresis arising from the polarization switching properties. When the thickness of ST0 buffer layer between PTO and Si substrate was 260 nrn and the post annealing temperature was $650^{\circ}C$, it was showed that production of the pyrochlore phase due to interdiffusion of Si into FTO was prevented. The dielectric constant of FTO thin films calculated from a maximum Cma in the accumulation region was 180 and the dielectric loss was 0.30 at 100 kHz frequency. The memory window in the C-V curve is 1.6V at a gate voltage of 5V.