• 제목/요약/키워드: P(VDF-TrFE-CFE)

검색결과 2건 처리시간 0.019초

P(VDF-TrFE-CFE)를 이용한 초소형 압전 적층형 진동 출력 소자의 제작 (Fabrication of Ultra-Small Multi-Layer Piezoelectric Vibrational Device Using P(VDF-TrFE-CFE))

  • 조성우;;김재규;류정재;김윤정;김혜진;박강호;홍승범
    • 한국전기전자재료학회논문지
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    • 제32권2호
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    • pp.157-160
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    • 2019
  • P(VDF-TrFE-CFE) (Poly (vinylidene fluoride-trifluoroethylene-chlorofluoroethylene)), which exhibits a high electrostriction of about 7%, can transmit tactile output as vibration or displacement. In this study, we investigated the applicability of P(VDF-TrFE-CFE) to wearable piezoelectric actuators. The P(VDF-TrFE-CFE) layers were deposited through spin-coating, and interspaced with patterned Ag electrodes to fabricate a two-layer $3.5mm{\times}3.5mm$ device. This layered structure was designed and fabricated to increase the output and displacement of the actuator at low driving voltages. In addition, a laser vibrometer and piezoelectric force microscope were used to analyze the device's vibration characteristics over the range of ~200~4,200 Hz. The on-off characteristics were confirmed at a frequency of 40 Hz.

N형 고분자 반도체의 전하주입 특성 향상을 통한 저전압 유기전계효과트랜지스터 특성 연구 (Low-Voltage Operating N-type Organic Field-Effect Transistors by Charge Injection Engineering of Polymer Semiconductors and Bi-Layered Gate Dielectrics)

  • 문지훈;백강준
    • 한국전기전자재료학회논문지
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    • 제30권10호
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    • pp.665-671
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    • 2017
  • Herein, we report the fabrication of low-voltage N-type organic field-effect transistors by using high capacitance fluorinated polymer gate dielectrics such as P(VDF-TrFE), P(VDF-TrFE-CTFE), and P(VDF-TrFE-CFE). Electron-withdrawing functional groups in PVDF-based polymers typically cause the depletion of negative charge carriers and a high contact resistance in N-channel organic semiconductors. Therefore, we incorporated intermediate layers of a low-k polymerto prevent the formation of a direct interface between PVDF-based gate insulators and the semiconducting active layer. Consequently, electron depletion is inhibited, and the high charge resistance between the semiconductor and source/drain electrodes is remarkably improved by the in corporation of solution-processed charge injection layers.