• 한국산학기술학회논문지
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• 제16권3호
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• pp.2131-2134
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• 2015

본 논문에서는 종이를 기판으로 사용하고 용액공정이 가능한 강유전체 메모리 소자의 제작 가능성을 검토하였다. 유기물 강유전체인 "폴리비닐리덴트리플루오르에틸렌" 용액을 하부전극이 형성된 종이기판 위에 스핀코핑 방법을 이용하여 도포하였다. 하부전극으로는 진공증착법을 이용하여 알루미늄을 증착하였고, 도포된 "폴리비닐리덴트리플루오르에틸렌" 용액은 열처리 과정을 통해 결정화하였다. 제작된 "폴리비닐리덴트리플루오르에틸렌" 박막은 주사 전자 현미경법(SEM), 원자간력 현미경(AFM)을 이용하여 박막의 단면 및 표면의 특성을 평가하였다. 전압에 따른 분극특성 측정을 통해, 종이기판 위에 형성된 "폴리비닐리덴트리플루오르에틸렌" 박막이 매우 훌륭한 강유전체 특성을 보여주고 있음을 확인하였다. 또한, 종이기판의 응용가능성을 검토하기 위하여, 실리콘 기판위에 제작한 "폴리비닐리덴트리플루오르에틸렌" 박막과의 비교에 있어서도 손색없는 강유전체 특성을 보여주고 있음을 알 수 있었다. 이러한 결과들은 종이를 기판으로 이용하여 전자소자들을 제작 할 수 있음을 시사하며, 또한 용액공정으로 고밀도의 저렴한 강유전체 메모리 소자를 손쉽게 제작 할 수 있다는 것을 의미한다.

• 한국섬유공학회:학술대회논문집
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• 한국섬유공학회 2007년도 학술발표회 논문집
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• pp.123-126
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• 2007

• 한국음향학회:학술대회논문집
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• 한국음향학회 2004년도 춘계학술발표대회 논문집 제23권 1호
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• pp.311-314
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• 2004

A new type of high frequency wideband ultrasonic transducer with a separation between a transmitter and a receiver was proposed and its characteristics were simulated using the PSpice model. The piezoelectric ceramic $PbTiO_{3}$ as a transmitter and the piezoelectric copolymer P(VDF-TrFE) as a receiver were used for high sensitivity and wide bandwidth, respectively. The characteristics of a center frequency approximately 40MHz focusing transducer fabricated in this study showed very wide bandwidth which could give an axial spatial resolution better than 30um in the B-mode image for biological tissues.

• 센서학회지
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• 제10권2호
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• pp.86-90
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• 2001

A pyroelectric senior using P(VDF/TrFE) film for sensing materials has been fabricated and evaluated with other commercial pyroelectric sensors that use ceramic materials for sensing. The device was mounted in a TO-5 housing to detect infrared light of $5.5{\sim}14\;{\mu}m$ wavelength. The NEP (noise equivalent power) and specific detectivity $D^*$ of the device were $2.13{\times}10^{-8}\;W$ and $9.37{\times}10^6\;cm/w$ respectively under emission energy of $13\;{\mu}W/cm^2$ respectively. These result shows a better characteristics than other commercial pyroelectric sensors NEP $8.08{\times}10^{-7}\;W$ and $D^*$ $2.47{\times}10^5\;cm/w$.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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• pp.907-909
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• 2009

Low voltage operated top gated polymer transistors were fabricated with a high permittivity polymer, P(VDF-TrFE) and F8T2 as a gate dielectric and semiconducting layer, respectively. The operating voltage of transistors was effectively reduced under -10 V and typical threshold voltages were as low as -1 ~ -4 V with the reasonable charge carrier mobility of $10^{-3}cm^2$/Vs for the amorphous polymer. The large hysteresis in transfer curve was improved effectively by annealing at low temperature.

• 한국전기전자재료학회논문지
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• 제27권3호
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• pp.184-188
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• 2014

The electro-optic properties in Langmuir Blodgett films of poly (vinylidene fluoride trifluoroethylene) are investigated in the crossover region between two and three dimensions. The absence of finite size effect is observed in the films thinner than 20 nm, which confirms that these films are two dimensional ferroelectrics. The copolymer LB film of P(VDF-TrFE) exhibits the largest electro-optic response(26 pm/V) at 10 layer thickness. The cross-over behavior of electro-optic effect around the 10 layer thickness was discussed with the formation of nanomesa after thermal annealing.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.491-491
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• 2011

Transparent and flexible electronic devices that are light-weight, unbreakable, low power consumption, optically transparent, and mechanical flexible possibly have great potential in new applications of digital gadgets. Potential applications include transparent displays, heads-up display, sensor, and artificial skin. Recent reports on transparent and flexible field-effect transistors (tf-FETs) have focused on improving mechanical properties, optical transmittance, and performances. Most of tf-FET devices were fabricated with transparent oxide semiconductors which mechanical flexibility is limited. And, there have been no reports of transparent and flexible all-organic tf-FETs fabricated with organic semiconductor channel, gate dielectric, gate electrode, source/drain electrode, and encapsulation for sensor applications. We present the first demonstration of transparent, flexible all-organic sensor based on multifunctional organic FETs with organic semiconductor channel, gate dielectric, and electrodes having a capability of sensing infrared (IR) radiation and mechanical strain. The key component of our device design is to integrate the poly(vinylidene fluoride-triflouroethylene) (P(VDF-TrFE) co-polymer directly into transparent and flexible OFETs as a multi-functional dielectric layer, which has both piezoelectric and pyroelectric properties. The P(VDF-TrFE) co-polumer gate dielectric has a high sensitivity to the wavelength regime over 800 nm. In particular, wavelength variations of P(VDF-TrFE) molecules coincide with wavelength range of IR radiation from human body (7000 nm ~14000 nm) so that the devices are highly sensitive with IR radiation of human body. Devices were examined by measuring IR light response at different powers. After that, we continued to measure IR response under various bending radius. AC (alternating current) gate biasing method was used to separate the response of direct pyroelectric gate dielectric and other electrical parameters such as mobility, capacitance, and contact resistance. Experiment results demonstrate that the tf-OTFT with high sensitivity to IR radiation can be applied for IR sensors.

• 비파괴검사학회지
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• 제32권5호
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• pp.585-596
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• 2012

PVDF와 P(VDF-TrFE)로 대별되는 압전고분자는 종래의 대표적인 압전재료인 PZT에 비해 전기음향변환효율이 떨어지며 내부손실이 큰 단점은 있으나, 음향임피던스가 물 또는 생체와 비슷하고 수신효율이 우수하며 광대역 특성을 나타내는 등의 장점을 가진 재료이다. 또한 다른 압전재료에 비해 얇은 막으로의 제작이 쉽고, 그 막은 유연하므로 복잡한 곡면을 갖는 고주파 초음파 트랜스듀서 재료로 유용하다. 그러한 특성은 생의학적 응용에 적합한바, 다양한 형태의 초음파 트랜스듀서가 연구 개발되어져 왔다. 본 논문에서는 먼저, 압전고분자막을 이용하여 초음파 트랜스듀서를 설계 제작하는데 있어서 고려해야할 몇 가지 주요사항을 기술하고, KLM 모델을 사용한 해석을 통하여 그 고려사항들이 트랜스듀서의 동작에 미치는 영향을 파악하였다. 다음으로, 의학적 또는 생물학적 응용을 목적으로 초음파 영상을 얻고 있는 몇몇 주요 응용분야에서 사용되는 압전고분자 트랜스듀서의 구조와 그것을 이용하여 얻은 영상의 특징에 대하여 간략히 해설하였다.

• 제어로봇시스템학회:학술대회논문집
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• 제어로봇시스템학회 2004년도 ICCAS
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• pp.2041-2044
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• 2004

A pyroelectric sensor using $PbTiO_3$/P(VDF/TrFE) nanocomposites thin film for sensing materials has been fabricated and evaluated with other commercial pyroelectric sensors that use ceramic materials for sensing. The device was mounted in a TO-5 housing to detect infrared light of 5.5 ~ 14 ${\mu}m$ wavelength. The NEP (noise equivalent power) and specific detectivity D of the device were 1.30 ${\times}$ $10^{-8}$W and 1.53 ${\times}$ $10^7$cm /W respectively under emission energy of 13 ${\mu}$W/c$m^2$ respectively. This result shows a better characteristic than the other commercial pyroelectric infrared sensors.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.281.2-281.2
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• 2016

Two-dimensional van der Waals (2D vdWs) materials have been extensively studied for future electronics and materials sciences due to their unique properties. Among them, black phosphorous (BP) has shown infinite potential for various device applications because of its high mobility and direct narrow band gap (~0.3 eV). In this work, we demonstrate a few-nm thick BP-based nonvolatile memory devices with an well-known poly(vinylidenefluoride-trifluoroethylene) [P(VDF-TrFE)] ferroelectric polymer gate insulator. Our BP ferroelectric memory devices show the highest linear mobility value of $1159cm^2/Vs$ with a $10^3$ on/off current ratio in our knowledge. Moreover, we successfully fabricate the ferroelectric complementary metal-oxide-semiconductor (CMOS) memory inverter circuits, combined with an n-type $MoS_2$ nanosheet transistor. Our memory CMOS inverter circuits show clear memory properties with a high output voltage memory efficiency of 95%. We thus conclude that the results of our ferroelectric memory devices exhibit promising perspectives for the future of 2D nanoelectronics and material science. More and advanced details will be discussed in the meeting.