• 제목/요약/키워드: Oxygen-plasma effect

검색결과 309건 처리시간 0.029초

RF 마그네트론 스퍼터일 법으로 증착된 에피택셜 ZnO 박막의 구조적, 전기적 특성 (Structural and electrical properties of high temperature deposited epitaxial ZnO thin film by RF magentron sputtering)

  • 김동훈;조남규;박훈;김호기
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2007년도 추계학술대회 논문집
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    • pp.184-185
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    • 2007
  • We investigated the growth behaviors of ZnO epilayers on sapphire substrates fabricated sing RF magnetron puttering and RTA. The effects of deposition temperature and oxygen partial pressure in plasma on the structural and electrical properties were measured by XRD, AFM, SEM, and Hall effect measurement. It was found that ZnO thin films became denser and smoother with increasing deposition temperature and $O_2$ content in the puttering gas. ZnO thin film of oxygen and argon with a ratio of 5:5 had an electron concentration of $8.048{\times}10^{18}cm^{-3}$, resistivity of $0.0141{\Omega}{\cdot}Cm$, and mobility of $55.07cm^2/V{\cdot}s$.

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P3HT를 이용한 유기 박막 트랜지스터에 관한 연구 (Investigation on the P3HT-based Organic Thin Film Transistors)

  • 김영훈;박성규;한정인;문대규;김원근;이찬재
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2002년도 춘계학술대회 논문집 디스플레이 광소자 분야
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    • pp.45-48
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    • 2002
  • Poly(3-hexylthiophene) or P3HT based organic thin film transistor (OTFT) array was fabricated on flexible poly carbonate substrates and the electrical characteristics were investigated. As the gate dielectric, a dual layer structure of polyimide-$SiO_2$ was used to improve the roughness of $SiO_2$ surface and further enhancing the device performance and also source-drain electrodes were $O_2$ plasma treated for improvement of the electrical properties, such as drain current and field effect mobility. For the active layer, polymer semiconductor, P3HT layer was printed by contact-printing and spin-coating method. The electrical properties of OTFT devices printed by both methods were evaluated for the comparison. Based on the experiments, P3HT-based OTFT array with field effect mobility of 0.02~0.025 $cm^{2}/V{\cdot}s$ and current modulation (or $I_{on}/I_{off}$ ratio) of $10^{3}\sim10^{4}$ was fabricated.

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염소수와 플라즈마 가스 처리가 왕고들빼기 어린잎채소의 MA저장 중 품질과 미생물 제어에 미치는 영향 (Effects of Chlorine Water and Plasma Gas Treatments on the Quality and Microbial Control of Latuca indica L. Baby Leaf Vegetable during MA Storage)

  • 김주영;한수정;왕립;이주환;최인이;강호민
    • 생물환경조절학회지
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    • 제28권3호
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    • pp.197-203
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    • 2019
  • 본 연구는 왕고들빼기 어린잎의 염소수 및 플라즈마 처리가 저장 중 품질 및 미생물 제어에 미치는 영향을 알아보고자 수행하였다. 초장이 10cm 수준에서 수확한 왕고들빼기 어린잎을 100ppm의 염소수와 플라즈마 가스로 1, 3, 6시간동안 살균 처리한 후 산소투과도가 $1,300cc{\cdot}m^{-2}{\cdot}day^{-1}{\cdot}atm^{-1}$인 OTR(oxygen transmission rate) 필름을 사용하여 포장하였고, $8{\pm}1^{\circ}C$의 저장 온도와 상대 습도 $85{\pm}5%$의 조건에서 25일간 저장하였다. 저장 중 생체중 감소율은 모든 처리구가 1.0% 미만을 보였고, 저장 종료일 모든 처리구의 포장 내 산소 농도는 16-17%을 보였고, 포장 내 이산화탄소 농도는 6-8%의 수준을 보였다. 포장 내 에틸렌 농도는 저장 기간 중 $1-3{\mu}L{\cdot}L^{-1}$의 수준으로 증감을 반복하였는데, 저장 10일째부터 저장 종료일까지 플라즈마 6시간 처리구가 가장 높은 농도를 보였다. 모든 처리구의 이취는 거의 느껴지지 않는 수준이었고, 염소수 및 플라즈마 가스 1시간 처리가 저장 종료일까지 상품성을 유지하였다. 저장 종료일에 조사한 엽록소 함량과 Hue angle 값은 염소수와 플라즈마 1시간 처리가 저장 전과 유사한 수준으로 높은 수준을 유지하였다. 살균 처리 직후 모든 살균 처리구에서 대장균은 검출되지 않았고, 총 세균 및 총 곰팡이 수는 플라즈마 6시간 처리구를 제외한 모든 살균 처리구에서 국내 미생물 허용 기준을 충족하였다. 저장 종료일 조사한 총 미생물수는 저장 전에 비해 증가하였으나 대장균은 모든 살균 처리구에서 검출되지 않았다. 세균과 곰팡이에 대한 살균효과는 염소수 처리가 가장 우수하였고, 플라즈마 처리구는 살균효과는 나타났으나 처리 시간이 길어짐에 따라 그 효과는 미비하였다. 위의 결과를 종합해보면, 왕고들빼기 어린잎은 염소수 처리 및 단시간 플라즈마 처리 시 황화 및 부패 억제를 통한 상품성 유지 및 미생물 제어에 효과가 있는 것으로 판단된다.

$BaTiO_3$-슬러지 Packed-bed형 반응기에서 $NO_x$제거에 미치는 슬러지의 영향 (Effect of Sludge Pellets on $NO_x$ REmoval in $BaTiO_3$-sludge Packed-bed Reactor)

  • 박재윤;송원섭;고희석;박상현
    • 한국전기전자재료학회논문지
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    • 제14권10호
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    • pp.861-867
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    • 2001
  • In this paper, in order to investigate the catalytic effect of the sludge exhausted from waterworks on NO$_{x}$ removal, we measure NO removal characteristics with and without sludge pellets in BaTiO$_3$-sludge packed-bed reactor of plate-plate geometry. NO initial concentration is 50 ppm balanced with air and a gas flow rate is 5ι/min. Gas temperature is changed from 25 to 10$0^{\circ}C$ to investigate the role of sludge pellet on removing active oxygen species and NO$_2$. BaTiO$_3$pellets is filled for coronal discharge at upstream of reactor and sludge pellets is filled for catalytic effect at downstream of reactor. The volume percent of sludge pellets to BaTiO$_3$pellets is changed from 0% to 100% and AC voltage is supplied to the reactor for discharging simulated gases. In the results, when sludge pellets is put at the downstream of plasma reactor, NO removal rate is slightly increased. However, NO$_2$and $O_3$ as by-products during NO removal is significantly decreased from 51ppm without sludge pellets to 5 ppm with sludge pellets and from 50 ppm without sludge pellets to 0.004ppm with sludge pellets, respectively. Therefore, NO$_{x}$(NO+NO$_2$) removal rate is increased up to 93%. It is thought that sludge pellet maybe react with active oxygen species and NO$_2$ generated by corona discharge in surface of BaTiO$_3$pellets, the then NO$_2$O$_3$as by-products are considerably decreased. When we increase gas temperature from room temperature to 10$0^{\circ}C$, NO removal rate is decreased, while NO$_2$ concentration is independent on gas temperature. These result suggest that the removal mechanism of active oxygen species and NO$_2$in sludge pellet is not absorption, but chemical reaction. Therefore we expect that sludge pellets exhausted for waterworks could be used as catalyst for NO$_{x}$ removal with high removal rate and low by-product.oduct.

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HIPIMS Arc-Free Reactive Deposition of Non-conductive Films Using the Applied Material ENDURA 200 mm Cluster Tool

  • Chistyakov, Roman
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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    • pp.96-97
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    • 2012
  • In nitride and oxide film deposition, sputtered metals react with nitrogen or oxygen gas in a vacuum chamber to form metal nitride or oxide films on a substrate. The physical properties of sputtered films (metals, oxides, and nitrides) are strongly influenced by magnetron plasma density during the deposition process. Typical target power densities on the magnetron during the deposition process are ~ (5-30) W/cm2, which gives a relatively low plasma density. The main challenge in reactive sputtering is the ability to generate a stable, arc free discharge at high plasma densities. Arcs occur due to formation of an insulating layer on the target surface caused by the re-deposition effect. One current method of generating an arc free discharge is to use the commercially available Pinnacle Plus+ Pulsed DC plasma generator manufactured by Advanced Energy Inc. This plasma generator uses a positive voltage pulse between negative pulses to attract electrons and discharge the target surface, thus preventing arc formation. However, this method can only generate low density plasma and therefore cannot allow full control of film properties. Also, after long runs ~ (1-3) hours, depends on duty cycle the stability of the reactive process is reduced due to increased probability of arc formation. Between 1995 and 1999, a new way of magnetron sputtering called HIPIMS (highly ionized pulse impulse magnetron sputtering) was developed. The main idea of this approach is to apply short ${\sim}(50-100){\mu}s$ high power pulses with a target power densities during the pulse between ~ (1-3) kW/cm2. These high power pulses generate high-density magnetron plasma that can significantly improve and control film properties. From the beginning, HIPIMS method has been applied to reactive sputtering processes for deposition of conductive and nonconductive films. However, commercially available HIPIMS plasma generators have not been able to create a stable, arc-free discharge in most reactive magnetron sputtering processes. HIPIMS plasma generators have been successfully used in reactive sputtering of nitrides for hard coating applications and for Al2O3 films. But until now there has been no HIPIMS data presented on reactive sputtering in cluster tools for semiconductors and MEMs applications. In this presentation, a new method of generating an arc free discharge for reactive HIPIMS using the new Cyprium plasma generator from Zpulser LLC will be introduced. Data (or evidence) will be presented showing that arc formation in reactive HIPIMS can be controlled without applying a positive voltage pulse between high power pulses. Arc-free reactive HIPIMS processes for sputtering AlN, TiO2, TiN and Si3N4 on the Applied Materials ENDURA 200 mm cluster tool will be presented. A direct comparison of the properties of films sputtered with the Advanced Energy Pinnacle Plus + plasma generator and the Zpulser Cyprium plasma generator will be presented.

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다공성 세라믹관내에서 생성되는 수중 유전체 장벽 방전 플라즈마를 이용한 아나톡신-a의 분해 (Decomposition of Aqueous Anatoxin-a Using Underwater Dielectric Barrier Discharge Plasma Created in a Porous Ceramic Tube)

  • 조진오;좌은진;목영선
    • 상하수도학회지
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    • 제30권2호
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    • pp.167-177
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    • 2016
  • This work investigated the decomposition of aqueous anatoxin-a originated from cyanobacteria using an underwater dielectric barrier discharge plasma system based on a porous ceramic tube and an alternating current (AC) high voltage. Plasmatic gas generated inside the porous ceramic tube was uniformly dispersed in the form of numerous bubbles into the aqueous solution through the micro-pores of the ceramic tube, which allowed an effective contact between the plasmatic gas and the aqueous anatoxin-a solution. Effect of applied voltage, treatment time and the coexistence of nutrients such as $NO_3{^-}$, $H_2PO_4{^-}$ and glucose on the decomposition of anatoxin-a was examined. Chemical analyses of the plasma-treated anatoxin-a solution using liquid chromatography-mass spectrometry (LC-MS) and ion chromatography (IC) were performed to elucidate the mineralization mechanisms. Increasing the voltage improved the anatoxin-a decomposition efficiency due to the increased discharge power, but the energy required to remove a given amount of anatoxin-a was similar, regardless of the voltage. At an applied voltage of 17.2 kV (oxygen flow rate: $1.0L\;min^{-1}$), anatoxin-a at an initial concentration of $1mg\;L^{-1}$ (volume: 0.5 L) was successfully treated within 3 min. The chemical analyses using LC-MS and IC suggested that the intermediates with molecular weights of 123~161 produced by the attack of plasma-induced reactive species on anatoxin-a molecule were further oxidized to stable compounds such as acetic acid, formic acid and oxalic acid.

Antioxidant Effect of $CoQ_{10}$ on N-nitrosodiethylamine-induced Oxidative Stress in Mice

  • Song, Ho-Sun;Kim, Hee-Rae;Park, Tae-Wook;Cho, Bong-Jae;Choi, Mi-Young;Kim, Chang-Jong;Sohn, Uy-Dong;Sim, Sang-Soo
    • The Korean Journal of Physiology and Pharmacology
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    • 제13권4호
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    • pp.321-326
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    • 2009
  • The antioxidant effect of $CoQ_{10}$ on N-nitrosodiethylamine (NDEA)-induced oxidative stress was investigated in mice. Food intake and body weight were similar in both $CoQ_{10}$ and control groups during the 3-week experimental period. NDEA significantly increased the activities of typical marker enzymes of liver function (AST, ALT and ALP) both in control and $CoQ_{10}$ groups. However, the increase of plasma aminotransferase activity was significantly reduced in the $CoQ_{10}$ group. Lipid peroxidation in various tissues, such as heart, lung, liver, kidney, spleen and plasma, was significantly increased by NDEA, but this increase was significantly reduced by 100 mg/kg of $CoQ_{10}$. Superoxide dismutase activity increased significantly upon NDEA-induced oxidative stress in both the control and $CoQ_{10}$ groups with the effect being less in the $CoQ_{10}$ group. Catalase activity decreased significantly in both the control and $CoQ_{10}$ groups treated with NDEA, again with the effect being less in the $CoQ_{10}$ group. The lesser effect on superoxide dismutase and catalase in the NDEA-treated $CoQ_{10}$ group is indicative of the protective effect $CoQ_{10}$. Thus, $CoQ_{10}$ can offer useful protection against NDEA-induced oxidative stress.

Contact resistance of mos2 field effect transistor based on large area film grown using chemical vapor deposition compares to depend on 3-type electrodes

  • 김상정;김성현;박성진;박명욱;유경화
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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    • pp.277.1-277.1
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    • 2016
  • We report on synthesis of large-area MoS2 using chemical vapor deposition (CVD). Relatively uniform MoS2 are obtained. To fabricate field-effect transistor (FET) devices, MoS2 films are transferred to another SiO2/Si substrate using polystyrene (PS) and patterned using oxygen plasma. In addition, to reduce contact resistance, synthesis of graphene used as channel. Device characteristics are presented and compared with the reported results.

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열처리 조건이 PECVD 방식으로 증착된 $Ta_2$$O_5$ 박막 특성에 미치는 영향 (Effect of Annealing Conditions on $Ta_2$$O_5$ Thin Films Deposited By PECVD System)

  • 백용구;은용석;박영진;김종철;최수한
    • 전자공학회논문지A
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    • 제30A권8호
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    • pp.34-41
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    • 1993
  • Effect of high temperature annealing conditions on Ta$_{2}O_{5}$ thin films was investigated. Ta$_{2}O_{5}$ thin films were deposited on P-type silicon substrates by plasma-enhanced chemical vapor deposition (PECVD) using tantalum ethylate. Ta(C$_{2}H_{5}O)_{5}$, and nitrous oxide. N$_{2}$O. The microstructure changed from amorphous to polycrystalline above 700.deg. C annealing temperature. The refractive index, dielectric onstant and leakage current of the film increased as annealing temperature increased. However, annealing in oxygen ambient reduced leakage currents and dielectric constant due to the formation of interfacial SiO$_{2}$ layer. By optimizing annealing temperature and ambient, leakage current lower than 10$^{-8}$ A/cm$^{2}$ and maximum capacitance of 9 fF/${\mu}m^{2}$ could be obtained.

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Quercetin, A Bioflavonoid, Protects Against Oxidative Stress-related Gastric Mucosal Damage in Rats

  • Rao, Ch.V.;Ojha, S.K.;Govindarajan, R.;Rawat, A.K.S.;Mehrotra, S.;Pushpangadan, P.
    • Natural Product Sciences
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    • 제9권2호
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    • pp.68-72
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    • 2003
  • Quercetin and its sugar conjugates are the most abundantly distributed bioflavonoids and represent the largest proportion of flavonols in the plant kingdom. The present study was undertaken to demonstrate the effect of quercetin on the role of reactive oxygen species (ROS) in the development of gastric ulcers in rats. Administration of quercetin in doses of 50, 100 and $200\;mg\;kg^{-1}$ twice daily for 5 days, showed dose dependent significant protection against ethanol (EtOH), aspirin (ASP), cold-restraint stress (CRS) and pylorus ligation (PL) -induced gastric ulcer models and the results were comparable with those elicited by sucralfate. The thiobarbituric acid reactive substances in the stomach mucosa, an index of lipid peroxidation and regulation of plasma corticosterone were significantly increased in CRS-induced gastric ulceration. The queroetin $(100\;mg\;kg^{-1})$ and reduced glutathione effectively inhibited gastric lesions induced by CRS with a significant decrease in the lipid peroxidation and plasma corticosterone. These results indicate that quercetin a bioflavonoid exerts its antiulcer effect in light of free radical scavenging and plasma corticosterone in cold restraint stress ulcers.