• Clean Technology
• /
• v.18 no.1
• /
• pp.57-62
• /
• 2012

Aqueous poly (vinyl alcohol) (PVA) solution was modified by using hydrophobic vinyltriethoxysilane (VTEOS) and then adding different amounts of poly (acrylic acid) (PAA) to the resulting solution. Thermal and mechanical properties, contact angle, water vapor transmission rate (MVTR) and oxygen gas transmission rate ($O_2TR$) of the film samples fabricated by these solutions were investigated. The glass transition temperature (Tg) of the VTEOS-modified films was sightly increased and the value remained unchanged according to the amount of PAA. The tensile strength of the VTEOS-modified films was found to be 9.48~10.72 $kg/mm^2$ which showed no significant difference compared with that of PVA. The film prepared with VTEOS-modified PVA/PAA (= 90/10), of which the swelling and solubility were measured to be 198% and 0%, respectively, showed improved water-resistance. The MVTR and $O_2TR$ for the PET film (thickness 50 ${\mu}m$) coated with VTEOS-modified PVA/PAA (= 90/10) film (thickness 2.5 ${\mu}m$) were measured to be 11.04 $g/m^2/day$ and 3.1 $cc/m^2/day$, respectively.

• Applied Chemistry for Engineering
• /
• v.31 no.1
• /
• pp.108-114
• /
• 2020

In this study, NH₃-selective catalytic oxidation (SCO) efficiencies according to calcination/reduction conditions were compared when preparing various Ru[1]/TiO₂ catalysts. The Ru[1]/TiO₂ red catalyst had better NH₃ conversion and NH₃ to N₂ conversion than those of Ru[1]/TiO₂ cal. Physico-chemical properties of Ru[1]/TiO₂ catalysts were confirmed by Brunauer Emmett Teller (BET), X-ray diffraction (XRD), transmission electron microscope (TEM), X-ray photoelectron spectroscopy (XPS) and temperature programmed reduction (H₂-TPR) analyses, and the properties were shown to affect the dispersion and surface adsorption oxygen species (O_β) ratio of the active metal.

• Journal of the Institute of Electronics and Information Engineers
• /
• v.49 no.9
• /
• pp.379-385
• /
• 2012

This paper suggests U-healthcare system for individual health management realizing the gateway, client, and Java-based network server by using the vital signal measuring system and android-based mobile platform. This study realized the vital signal measuring system based on the technology to measure the ECG, oxygen saturation, blood pressure, and respiration, etc. And all the information of measurement was transmitted to the mobile gateway using the 3-bite transmission protocol consisting of headers and data. The data transmitted to the mobile gateway was used to examine the mobile client's personal health indexes through the network server. This paper realized and tested the android-based gateway, client, and the broadcasting network server and verified their validity with simulations and actual humans. As a result, the U-healthcare system suggested was proved to be effective in managing each individual's health from short distance and long distance. And it could examine each individual's health conditions in real-time and was found to be advantageous in that it could secure the guardian's mobility.

• Journal of Korean Society of Occupational and Environmental Hygiene
• /
• v.25 no.1
• /
• pp.36-44
• /
• 2015

Objectives: This study aimed to elucidate the physicochemical properties of silica powder and airborne particles as by-products generated from fabrication processes to reduce unknown risk factors in the semiconductor manufacturing work environment. Materials and Methods: Sampling was conducted at 200 mm and 300 mm semiconductor wafer fabrication facilities. Thirty-two powder and airborne by-product samples, diffusion(10), chemical vapor deposition(10), chemical mechanical polishing(5), clean(5), etch process(2), were collected from inner chamber parts from process and 1st scrubber equipment during maintenance and process operation. The chemical composition, size, shape, and crystal structure of silica by-product particles were determined by using scanning electron microscopy and transmission electron microscopy techniques equipped with energy dispersive spectroscopy, and x-ray diffractometry. Results: All powder and airborne particle samples were composed of oxygen(O) and silicon(Si), which means silica particle. The by-product particles were nearly spherical $SiO_2$ and the particle size ranged 25 nm to $50{\mu}m$, and most of the particles were usually agglomerated within a particle size range from approximately 25 nm to 500 nm. In addition, the crystal structure of the silica powder particles was found to be an amorphous silica. Conclusions: The silica by-product particles generated from the semiconductor manufacturing processes are amorphous $SiO_2$, which is considered a less toxic form. These results should provide useful information for alternative strategies to improve the work environment and workers' health.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.22 no.12
• /
• pp.1028-1032
• /
• 2009

In this study, the influences of silicon-based gas barrier films fabricated by using a facing target sputtering(FTS) system on the gas permeability for flexible displays have been investigated. Under these optimum conditions on the $SiO_x$ film with oxygen concentration($O_2/Ar+O_2$) of 3.3% and the $SiO_xN_y$ film with nitrogen concentration($N_2/Ar+O_2+N_2$) of 30% deposited by the FTS system, it was found that the films were grown about 4 times higher deposition rate than that of the conventional sputtering system and showed high transmittance about 85% in the visible light range. Particularly, the polyethylene naphthalate(PEN) substrates with the $SiO_x$ and/or $SiO_xN_y$ films showed the enhanced properties of decreased water vapor transmission rate (WVTR) over $10^{-1}\;g/m^2{\cdot}day$ compared with the PEN substrate without any gas barrier films, which was due to high packing density in the Si-based films with high plasma density by FTS process and/or the denser chemical structure of Si-N bond in the $SiO_xN_y$ film.

• Journal of the Korean Society of Manufacturing Process Engineers
• /
• v.17 no.3
• /
• pp.51-58
• /
• 2018

In this paper, the organic material Poly(methyl methacrylate) PMMA is used with inorganic $Al_2O_3$ to fabricate organic-inorganic multilayer barrier thin films. The organic thin films are developed using a roll-to-roll electrohydrodynamic atomization system, whereas the inorganic are grown using a roll-to-roll low-temperature atmospheric pressure atomic layer deposition system. For the first time, these two technologies are used together to develop organic-inorganic multilayer barrier thin films in atmospheric condition. The films are grown under optimized parameters and classified into three classes based on the layer structures, when the total thickness of the barrier is maintained at ~ 160 nm. All classes of barriers show good morphological, optical and chemical properties. The $Al_2O_3$ films with a low average arithmetic roughness of 1.58 nm conceal the non-uniformity and irregularities in PMMA thin films with a roughness of 5.20 nm. All classes of barriers show a notably good optical transmission of ~ 85 %. The hybrid organic-inorganic barriers show water vapor and oxygen permeation in the range of ${\sim}3.2{\times}10^{-2}g/m^2/day$ and $0.015cc/m^2/day$ at $23^{\circ}C$ and 100% relative humidity. It has been confirmed that it can be mass-produced and used as a low-cost barrier thin film in various printing electronic devices.

• Journal of Sensor Science and Technology
• /
• v.28 no.6
• /
• pp.402-406
• /
• 2019

Recently, semiconducting organic materials have been spotlighted as next-generation electronic materials based on their tunable electrical and optical properties, low-cost process, and flexibility. However, typical organic semiconductor materials are vulnerable to moisture and oxygen. Therefore, an encapsulation layer is essential for application of electronic devices. In this study, SiN_x thin films deposited at process temperatures below 150 ℃ by plasma-enhanced chemical vapor deposition (PECVD) were characterized for application as an encapsulation layer on organic devices. A single structured SiN_x thin film was optimized as an organic light-emitting diode (OLED) encapsulation layer at process temperature of 80 ℃. The optimized SiN_x film exhibited excellent water vapor transmission rate (WVTR) of less than 5 × 10^-5 g/㎡·day and transmittance of over 87.3% on the visible region with thickness of 1 ㎛. Application of the SiN_x thin film on the top-emitting OLED showed that the PECVD process did not degrade the electrical properties of the device, and the OLED with SiN_x exhibited improved operating lifetime

• Korean Journal of Food Science and Technology
• /
• v.31 no.1
• /
• pp.99-105
• /
• 1999

The preparation and the functional properties of methylcellulose (MC) and hydroxypropyl-methylcellulose (HPMC) edible films with and without calcium were investigated. All the prepared films exhibited transparent and whitish color with $2.38{\sim}3.55$ haze intensity. Tensile strength of MC films were stronger than HPMC films with and without calcium, and moreover addition of calcium increased tensile, but elongation of HPMC film was specially lower than the other films. Solubility of films did not differ with calcium addition but decreased with increasing viscosity in HPMC films. water vapor transmission rate (WVTR) of HPMC and MC film were not affected by calcium, but viscosity of film's raw material was important to determine WVTR in HPMC. Oxygen permeabilities of MC films were lower than those of HPMC films, and became lower with calcium addition. According to scanning electron microscope (SEM) observation on the surface characteristics, MC film with calcium had relatively uniform and smooth surface than HPMC films.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2013.02a
• /
• pp.543-543
• /
• 2013

Thin-film transistors (TFTs) based on oxide semiconductors have been regarded as promising alternatives for conventional amorphous and polycrystalline silicon TFTs. Oxide TFTs have several advantages, such as low temperature processing, transparency and high field-effect mobility. Lots of oxide semiconductors for example ZnO, SnO2, In2O3, InZnO, ZnSnO, and InGaZnO etc. have been researched. Particularly, zinc-tin oxide (ZTO) is suitable for channel layer of oxide TFTs having a high mobility that Sn in ZTO can improve the carrier transport by overlapping orbital. However, some issues related to the ZTO TFT electrical performance still remain to be resolved, such as obtaining good electrical contact between source/drain (S/D) electrodes and active channel layer. In this study, the bottom-gate type ZTO TFTs with staggered structure were prepared. Thin films of ZTO (40 nm thick) were deposited by DC magnetron sputtering and performed at room temperature in an Ar atmosphere with an oxygen partial pressure of 10%. After annealing the thin films of ZTO at $400^{\circ}C$ or an hour, Cu, Mo, ITO and Ti electrodes were used for the S/D electrodes. Cu, Mo, ITO and Ti (200 nm thick) were also deposited by DC magnetron sputtering at room temperature. The channel layer and S/D electrodes were defined using a lift-off process which resulted in a fixed width W of 100 ${\mu}m$ and channel length L varied from 10 to 50 ${\mu}m$. The TFT source/drain series resistance, the intrinsic mobility (${\mu}i$), and intrinsic threshold voltage (Vi) were extracted by transmission line method (TLM) using a series of TFTs with different channel lengths. And the performances of ZTO TFTs were measured by using HP 4145B semiconductor analyzer. The results showed that the Cu S/D electrodes had a high intrinsic field effect mobility and a low effective contact resistance compared to other electrodes such as Mo, ITO and Ti.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2013.02a
• /
• pp.438-439
• /
• 2013

Microelectronic devices의 접촉저항의 향상을 위해 Metal silicides의 형성 mechanism과 전기적 특성에 대한 연구가 많이 이루어지고 있다. 지난 수십년에 걸쳐, Ti silicide, Co silicide, Ni silicide 등에 대한 개발이 이루어져 왔으나, 계속적인 저저항 접촉 소재에 대한 요구에 의해 최근에는 Rare earth silicide에 관한 연구가 시작되고 있다. Rare-earth silicide는 저온에서 silicides를 형성하고, n-type Si과 낮은 schottky barrier contact (~0.3 eV)를 이룬다. 또한, 비교적 낮은 resistivity와 hexagonal AlB2 crystal structure에 의해 Si과 좋은 lattice match를 가져 Si wafer에서 high quality silicide thin film을 성장시킬 수 있다. Rare earth silicides 중에서 ytterbium silicide는 가장 낮은 electric work function을 갖고 있어 낮은 schottky barrier 응용에서 쓰이고 있다. 이로 인해, n-channel schottky barrier MOSFETs의 source/drain으로써 주목받고 있다. 특히 ytterbium과 molybdenum co-deposition을 하여 증착할 경우 thin film 형성에 있어 안정적인 morphology를 나타낸다. 또한, ytterbium silicide와 마찬가지로 낮은 면저항과 electric work function을 갖는다. 그러나 ytterbium silicide에 molybdenum을 화합물로써 높은 농도로 포함할 경우 높은 schottky barrier를 형성하고 epitaxial growth를 방해하여 silicide film의 quality 저하를 야기할 수 있다. 본 연구에서는 ytterbium과 molybdenum의 co-deposition에 따른 silicide 형성과 전기적 특성 변화에 대한 자세한 분석을 TEM, 4-probe point 등의 다양한 분석 도구를 이용하여 진행하였다. Ytterbium과 molybdenum을 co-deposition하기 위하여 기판으로 $1{\sim}0{\Omega}{\cdot}cm$의 비저항을 갖는 low doped n-type Si (100) bulk wafer를 사용하였다. Native oxide layer를 제거하기 위해 1%의 hydrofluoric (HF) acid solution에 wafer를 세정하였다. 그리고 고진공에서 RF sputtering 법을 이용하여 Ytterbium과 molybdenum을 동시에 증착하였다. RE metal의 경우 oxygen과 높은 반응성을 가지므로 oxidation을 막기 위해 그 위에 capping layer로 100 nm 두께의 TiN을 증착하였다. 증착 후, 진공 분위기에서 rapid thermal anneal(RTA)을 이용하여 $300{\sim}700^{\circ}C$에서 각각 1분간 열처리하여 ytterbium silicides를 형성하였다. 전기적 특성 평가를 위한 sheet resistance 측정은 4-point probe를 사용하였고, Mo doped ytterbium silicide와 Si interface의 atomic scale의 미세 구조를 통한 Mo doped ytterbium silicide의 형성 mechanism 분석을 위하여 trasmission electron microscopy (JEM-2100F)를 이용하였다.