• The Korean Journal of Ceramics
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• 제1권1호
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• pp.21-28
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• 1995

Electrical conductivity of $TiO_2$ thin films, deposited on $Al_2O_3$ substrates by metal organic chemical vapor deposition (MOCVD), was measured by four-point probe method in a temperature range from $800^{\circ}C$ to $1025^{\circ}C$ and an oxygen partial pressure range from $2.7{\times}10^{-5}$ atm to 1 atm. In the low oxygen partial pressure region n-type conduction was dominant, but in the high oxygen partial pressure region p-type conduction behavior appeared due to substitution of Ti ions by Al ions, which were diffused from the substrate during post deposition annealing process. Electrical conductivity of the film decreases in the n-type region and increases in the p-type region as the oxygen partial pressure increases. The transition points, which show the minimum conductivity, shifted to the higher oxygen partial pressure region as the measuring temperature increased, but it shifted to lower oxygen partial pressure region with an increase in the post annealing temperature. The results were also discussed with the possible defect models.

• 한국전기전자재료학회논문지
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• 제16권9호
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• pp.775-782
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• 2003

In the study, the total conductivies in [(Ce $O_2$)$_{1-x}$ (Zr $O_2$)$_{x}$]$_{0.8}$(Sm $O_{1.5}$)$_{0.2}$ (x- 0, 0.05, 0.1, 0.2) solid solution were measured as a function of temperature and oxygen partial pressure between 80$0^{\circ}C$ and 1,00$0^{\circ}C$ using 4-probe d.c method. Under pure oxygen atmospere, the oxygen ionic conductivity of [(Ce $O_2$)$_{1-x}$ (Zr $O_2$)$_{x}$]$_{0.8}$(Sm $O_{1.5}$)$_{0.2}$ decreased with the concentration of Zr $O_2$At high oxygen partial pressure, the electrical conductivity is almost independent of oxygen partial pressure and decreased with the increase in Zr content. However, the electrical conductivity increase with decreasing oxygen partial pressure and is almost independent of Zr content at low oxygen partial pressure. Empirically, Total conductivity( $\sigma$ ) was expressed by the p$o_{2}$ -independent conductivity as $\sigma$$_{i}$, and the $p_{-1/4}$ $o_{2}$sup -dependent part as $\sigma$$_{e}$. Total, ionic and electronic conductivities fitted by data enabled to determine the transference number. The ionic transference number( $t_{i}$ ) decreased while the electronic transference( $t_{e}$ ) increase with the increase in Zr content and p$o_{2}$.

• Progress in Superconductivity
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• 제10권2호
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• pp.133-138
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• 2009

The $Nd_{1+x}Ba_{2-x}Cu_3O_{7-{\delta}}$(Nd123) superconductor exhibits high performance in high magnetic field and high temperature. We have studied phase stability for Nd123 under reduced oxygen partial pressure and various heat-treatment conditions. The main phase is Nd123 and some samples contain small amounts of Nd422 depending on the temperature and oxygen partial pressure. The decomposition temperature decreases with decreasing oxygen partial pressure from $1052^{\circ}C(P(O_2)$=150 Torr) to about $845^{\circ}C(P(O_2)$=0.1 Torr). The liquidus line was steeper temperature with decreasing oxygen partial pressure. In same condition of oxygen partial pressure, the region of stable Nd123 phase was formed at slightly higher temperature than the region of stable YBCO phase.

• 한국세라믹학회지
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• 제27권7호
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• pp.841-850
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• 1990

The electrical conductivity of SrTiO3 thick films, which has been prepared by screen printing and sintering on polycrystalline Al2O3 substrates, was determined as a function of oxygen partial pressure and temperature. The data showed that electrical conductivity was proportional to the -1/4th power of the oxygen partial pressure for the oxygen partial pressure range from 10-4-10-8 to 10-20 atm and proportional to Po2+1/4 for the oxygen partial pressure range from 10-6-10-4 to 1atm. And then n-p transition region of electrical conductivity moved to lower oxygen partial pressure region as the sintering temperature of thick film specimens increased under about 140$0^{\circ}C$. These data were consistent with the presence of small amounts of acceptor impurities in SrTiO3 thick film which have been diffused from Al2O3 substrate in the range of solid solubility limit.

• 한국세라믹학회지
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• 제41권5호
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• pp.364-369
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• 2004

The barrier and optical properties of AlO$_{x}$ thin films on polycarbonate deposited by Reactive Ion Beam Sputtering (RIBS) were investigated at different oxygen partial pressure. We measured the deposition rate of AlO$_{x}$ thin films. As the oxygen partial pres-sure increased, the deposition rate increased then decreased. The changes of deposition rate are associated with the properties of deposited films. The properties of deposited AlO$_{x}$ thin films were studied using X-ray Photoelectron Spectroscopy (XPS), Scan-ning Electron Microscopy (SEM), and Atomic Force Microscopy (AFM). Optimum deposition parameters were found for fabricat-ing aluminum oxide thin films with high optical transparency for visible light and low Oxygen Transmission Rate (OTR). The optical transmittance of AlO$_{x}$ thin film deposited on polycarbonate (PC) showed the same value of bare PC.bare PC.

• 한국세라믹학회지
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• 제38권12호
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• pp.1093-1096
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• 2001

ZnO내 $Al_2$ $O_3$의 고용은 $Al^{3+}$ 의 ZnO 결정의 $Zn^{2+}$자리, 즉 wurtizite 구조에서 4개의 산소가 만드는 4면체 공간자리로서 치환반응으로 정의될 수 있다. 이 반응은 아연-빈자리 혹은 산소-빈자리와 연관되어 일어나므로 ZnO의 비화학량론성 및 결정결함반응들과 상관관계를 가진다. 이러한 상호연관성은 아연-빈자리 및 산소분압(P $o_2$) 의존성을 낳으며, 결과적으로 ZnO내 Al 용해도([Al/sug zn/]$_{max}$)의 산소분압 의존성을 야기한다. 본 논문은 ZnO내에 Al의 용해도는 산소분압이 증가하면 감소한다는 것을 처음으로 곗나하여 보고한다. [A $l_{zn}$ ]$_{max}$ $P_{o2}$$^{-1}$4/./.

• The Korean Journal of Ceramics
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• 제5권3호
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• pp.288-295
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• 1999

Partial conductivities contributed by electron holes, oxygen ions, and protons were caluclated in $SrZr_{0.95}Y_{0.05}O_{2.975}$, using the reported formulae derived from the defect chemistry of HTPCs. Required parameters were obtained from the graphical analysis of total conductivity variation against partial pressure of water vapor and oxygen. Predicted overall conductivities showed a reasonable agreement with experimental measurements. The conductivity of the material showed a linear increase with square root of the water vapor pressure. This increase was due to proton conduction in an almost pure ionic conductivity. The calculation of partial conductivities at $800^{\circ}C$ resulted in an almost pure ionic conductivity at $P_{02}=10^{-10}$ atm and a predominant hole conductivity at $P_{02}=10^{-10}$ atm. Pure proton conduction was not expected at this temperature, contrary to the earlier reports. Discussions were made in relation with reported thermodynamic data and defect structure of the material. It was shown that from the total conductivity dependence on water vapor pressure, the pure ionic conductivity at low oxygen partial pressures could be separated into protonic and oxygen ionic conductivity in $ZrO_2$-based HTPCs.

• The Korean Journal of Ceramics
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• 제4권2호
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• pp.68-71
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• 1998

The effect of Mn and Nb additions on the electrical properties of BaTiO$_3$ has been studied by means of equilibrium electrical conductivity as a function of temperature, oxygen partial pressure(Po$_2$) and composition. If the manganese ion is added to the normal Ti site, i.e. BaTi$_{1-x}Mn_xO_{\delta-6}$, the equilibrium conductivity shows strong evidence of acceptor-doped behavior. The conductivity minimum, corresponding to the transition from oxygen excess, p-type behavior to oxygen deficient, n-type behavior with decreasing Po$_2$, is displaced to lower Po$_2$ and is broadened and flattened. The partial replacement of Mn ion with Nb decreases the acceptor-doped effect and the total replacement exhibits a typical donor-doped behavior. It was confirmed that unlike undoped or other acceptor-doped behavior. It was confirmed that unlike undoped or other acceptor-doped samples, for the p-type region, the electrical conductivity follows the 1/6th power dependence of oxygen partial pressure.

• 한국초전도ㆍ저온공학회논문지
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• 제8권1호
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• pp.23-25
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• 2006

Optimization of process variables, including oxygen and water partial pressure and also an nesting temperature, was performed in batch-type process to fabricate YBCO films on LaAlO3 single crystal. In this work, YBCO oxide powder was used as a starting precursor for metal-organic deposition(MOD)method. The precursor films were fabricated in batch furnace and they were converted to the epitaxial YBCO films at the same furnace with varying the process variables. The oxygen partial pressure was varied from 100ppm to 2000ppm and the water partial pressure from 1.2% to 12.2%. The window for optimal P(O2) was narrow about 700ppm for batch-type process. YBCO films in bathc-thype MOD process were optimized at 740-770oC and P(H2O) of 2.3%-7.3%.

• 한국수산과학회지
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• 제38권2호
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• pp.106-111
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• 2005

We studied the cardio-respiratory properties in the Japanese amberjack (Seriola quinqueradiata) during acute hypoxia exposure. Fish were exposed to three levels of hypoxia (80, 60 or 50 mmHg) for 60 min at $25^{\circ}C$. Cardiovascular parameters (cardiac output; Q, heart rate; HR, stroke volume; SV, blood pressure; $P_{DA}$) changed little from pre-exposure values during both 80 and 60 mmHg of hypoxia. During 50 mmHg of hypoxia, the fish showed a bradycardia which significantly affected Q, whereas no change in SV. $P_{DA}$ increased transiently. Arterial oxygen partial pressure ($PaO_2$) immediately reduced along with a decrease of the water oxygen partial pressure ($P_WO_2$). Arterial $O_2$ content ($CaO_2$) decreased significantly only after 60 min of 50 mmHg of hypoxia. Arterial pH (pHa) and hematocrit value (Hct) did not change significantly. Comparing the effects of different levels of hypoxia, oxygen delivery to the tissues ($Q\;{\times}\;CaO_2$) should be maintained a constant over a broad range of $P_WO_2$, however, severely depressed below 50 mmHg of hypoxia.