• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.634-637
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• 1999

The amorphous vanadium oxide as a cathode material is very preferable for fabricating high performance micro-battery. The amorphous vanadium oxide cathode is preferred over the crystalline form because three times more lithium ions can be inserted into the amorphous cathode, thus making a battery that has a higher capacity. The electrochemical properties of sputtered films are strongly dependent on the oxygen partial pressure in the sputtering gas. The effect of different oxygen partial pressure on the electrochemical properties of vanadium oxide thin films formed by r.f. reactive sputtering deposition were investigated. The stoichiometry of the as-deposited films were investigated by Auger electro spectroscopy. X-ray diffraction and atomic force microscopy measurements were carried out to investigate structural properties and surface morphology, respectively. For high oxygen partial pressure(>30% ), the films were polycrystalline V$_2$O$_{5}$ while an amorphous vanadium oxide was obtained at the lower oxygen partial pressure(< 15%). Half-cell tests were conducted to investigate the electrochemical properties of the vanadium oxide film cathode. The cell capacity was about 60 $\mu$ Ah/$\textrm{cm}^2$ m after 200 cycle when oxygen partial pressure was 20%. These results suggested that the capacity of the thin film battery based on vanadium oxide cathode was strongly depends on crystallinity.y.

• Journal of the Korean Ceramic Society
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• v.50 no.4
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• pp.288-293
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• 2013

Zn-In-Sn-O films were prepared at room temperature by combinatorial RF-magnetron co-sputtering system. The cationic contents of the films were varied using a compositionally combinatorial technique. The effects of the oxygen partial pressure and film compositionon the structural and electrical properties were investigated. The Zn-In-Sn-O films deposited at Ar gas atmosphere showed an amorphous phaseirrespective of the film composition. However, the amorphous Zn-In-Sn-O films with a Zn content below 30.0 at% were converted into a bixbyite type-ITO polycrystalline phase with an increase in the oxygen partial pressure. The resistivity, carrier concentration, and Hall mobility were strongly affected by the oxygen partial pressure and chemical composition of the film. At sufficiently high carrier densities above $5{\times}10^{18}cm^{-3}$, the conduction behavior of amorphous Zn-In-Sn-O film changes from thermally activated to degenerate band conduction accompanied with high mobility.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2008.11a
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• pp.101-101
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• 2008

The effect of oxygen partial pressure on the surface tension data of liquid alloys was investigated by means of comparing the calculated data and the measured one. Two binary alloy systems were chosen to observe the dependence of oxygen adsorption behavior on different oxygen partial pressures. It was found that the difference between the computed values and the experimental of the surface tension was within the range of maximum 10%.

• Journal of the Korean Ceramic Society
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• v.34 no.6
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• pp.561-568
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• 1997

The effects of sintering temperature and oxygen partial pressure on the electromagnetic properties of Mn-Zn ferrites were investigated. The grain increased with increasing temperature. The power loss at 100 kHz was decreased, while the power loss at 500 kHz was increased as the grain size increased with sintering temperature. Sintering with low oxygen partial pressure at 115$0^{\circ}C$ resulted in high density and initial permeability, and decreased the power loss at 100 kHz and 500 kHz. The oxygen partial pressure lower than 10-2 atm. during heating, significantly suppressed the hysteresis loss. However, the oxygen activity did not affect the grain size of sintered cores.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.6 no.3
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• pp.406-414
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• 1996

We studied the phase formation and the effect of electrical properties of PZT thin films with changing the oxygen partial pressure in cooling after deposition of PZT thin film by reactive sputtering method. The roughness of thin film increased with decreasing the oxygen partial pressure in cooling due to the evaporation on the surface ofthin films and the grain size was not changed very much. The hysteresis property of PZT thin film was improved toward having a good squareness with increasing the cooling oxygen partial pressure. We observed the decrease of remanent polarization, retained polarization and coercive field with decreasing the oxygen partial pressure. Dielectric constant decreased gradually and internal bias field increased in the measurement of dielectric constant-voltage property with decreasing cooling oxygen partial pressure. We observed the increase of nonswitched polarization in the measurement of field accelerated retention and the decrease of nonswitched polarization with increasing the bias time.

• Journal of the Korean Vacuum Society
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• v.17 no.3
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• pp.204-210
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• 2008

ZnO thin films were grown on a glass by RF sputtering system with RF power 100W and oxygen partial pressure of $0%{/sim}30%$. Elliptic constants were measured by using a phase modulated spectroscopic ellipsometer and analyzed with the Tauc-Lorentz dispersion formula and best fit method in the range of 1.5 to 3.8eV. Also, scanning electron microscope(SEM) was used for the analysis of surface crystallization condition. From elliptic constants spectra, optical constants, thickness and roughness of ZnO films were evaluated. Total thickness of ZnO films obtained by ellipsometry showed good agreement with SEM data. It was found that the grain size of the films were getting smaller with increasing oxygen partial pressure. Band-gap of ZnO films increase with the oxygen partial pressure. These findings clearly indicate that optical properties of ZnO films are strongly dependent on the oxygen partial pressure. It could be explained that increasing the oxygen partial pressure induced high crystalline imperfection in the ZnO films.

• Transactions on Electrical and Electronic Materials
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• v.3 no.2
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• pp.24-27
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• 2002

The NdBaCuO superconductor samples were zone-melted in low oxygen partial pressure (1%O$_2$+99%Ar). The zone-melting temperature was decreased about 12$0^{\circ}C$ film 1,06$0^{\circ}C$, the zone-melting temperature in air. Thus the loss of liquid phase (BaCuO$_2$ and CuO) was reduced during: the zone-melting process. The content of non-superconducting phase Nd422 in zone-melted NdBaCuO samples was clearly decreased and, therefore, the substitution of Nd for Ba was occurred. The superconductivity of zone-melted Nd$_{1+x}$Ba$_{2-x}$Cu$_3$O$_{y}$ prepared under low oxygen partial pressure was distinctively improved.d.d.d.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.85-88
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• 2001

The NdBaCuO superconductor samples were Zone-melted in low oxygen partial pressure (1% $O_{2}+ 99% Ar$ ). The Zone-melting temperature was decreased about $120^{\circ}C$ from $1060^{\circ}C$ the zone-melting temperature in air. Thus the loss of liquid phase ($BaCuO_{2}$ and CuO) was reduced during the zone-melting process. The content of non-superconducting phase Nd422 in zone-melted NdBaCuO samples was clearly decreased, so was the substitution of Nd for Ba. The superconductivity of zone-melted $Nd_{1+x}Ba_{2-x}Cu_{3}O_{y}$ prepared under low oxygen partial pressure was distinctively improved.

• Journal of the Korean Ceramic Society
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• v.36 no.12
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• pp.1335-1341
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• 1999

The electrical conductivity ($\sigma$) of TiO2 doped with 0.05-4.0mol% Nb2O5 was measured in the oxygen partial pressure range of 10-17 to 100 atm and temperature range of 1100 to 130$0^{\circ}C$ to investigate the electrical properties and defect types. The oxygen partial pressure dependence of the electrical conductivity (log$\sigma$/logPo2) above 110$0^{\circ}C$ was divided into the four regions. From these experimental results the following defect regions were proposed ; 1) Magneli phase(extended defect) 2) reduced rutile region where intrinsic defect predominates 3) nearly stoichiometric region which is independent on the oxygen partical pressure and 4) overstoichiometric region which is not observed in pure TiO2 The electrical conductivity of Nb-doped TiO2 depended on the doping content the oxygen partial pressure and the measuring tem-perature.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.85-88
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• 2001

The NdBaCuO superconductor samples were Zone-melted in low oxygen partial pressure (1% O$_2$+99% Ar). The Zone-melting temperature was decreased about 120$^{\circ}C$ from 1060$^{\circ}C$ the zone-melting temperature in air. Thus the loss of liquid phase (BaCuO$_2$ and CuO) was reduced during the zone-melting process. The content of non-superconducting phase Nd422 in zone-melted NdBaCuO samples was clearly decreased, so was the substitution of Nd for Ba. The superconductivity of zone-melted Nd$\sub$1+x/Ba$\sub$2-x/Cu$_3$O$\sub$y/ prepared under low oxygen partial pressure was distinctively improved.