• Journal of the Korean Ceramic Society
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• v.50 no.3
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• pp.180-185
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• 2013

We investigated the characteristics of hot-pressed pure yttria ceramics, and annealed them in an oxidation atmosphere. Regardless of the heat treatment in the oxidation atmosphere, XRD analysis showed that all the samples had a $Y_2O_3$ phase without structural change. Even though the color variation of the hot-pressed $Y_2O_3$ ceramics was due to the sintering temperatures, the oxidation process turned the color of the $Y_2O_3$ ceramics into white. The color change during oxidation treatment appears to be related to oxygen defects. In addition, oxygen defects also affected the weight change and microstructure of the $Y_2O_3$ ceramics. The $Y_2O_3$ ceramic sintered at $1600^{\circ}C$ had a $5.03g/cm^3$ density, which is close to the theoretical density of $Y_2O_3$. As the sintering temperature increased, small homogeneous grains grew to large grains which affected the Vickers hardness. $Y_2O_3$ ceramics hot-pressed at $1600^{\circ}C$ and annealed at $1200^{\circ}C$ had a flexural strength of 140MPa.

• Laser Solutions
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• v.9 no.3
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• pp.15-21
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• 2006

A Polypropylene (PP) film was ablated using a femtosecond laser with a center wavelength of 785 nm, a pulse width of 184 fs and a repetition rate of 1 kHz. Increments of both pulse energy and the shot number of pulses lead to co-occurrence of photochemical and thermal effect, demonstrated by the spatial expansion of rim on the surface of PP. The shapes of the laser-ablated PP films were imaged by a scanning electron microscope (SEM) and measured a 3D optical measurement system (NanoFocus). And, the oxygen transmission rate (ORT) of periodically laser-ablated PP film were characterized by oxygen permeability tester for modified atmosphere packaging (MAP) of fresh fruit and vegetable. Our results demonstrate that femtosecond pulsed laser is efficient tools for breathable packaging films in modifying the flow of air and gas into and out of a fresh produce container, where the micropatterns are specifically tailored in size, location and number which are easily controlled by laser pulse energy and pulse patterning system.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.320-321
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• 2008

Ferroelectric $SrBi_2Ta_2O_9$(SBT) ceramics were deposite on Pt/Ti/SiO2/Si substrates using a sintered SBT target and then were annealed in the oxygen atmosphere at $750^{\circ}C$, the most excellent characteristics were shown, and the remnant polarization ($2P_r$) value and the coercive electric field ($E_c$) were respectively about 12.40[${\mu}C/cm^2$] and 30[kV/cm]. Moreover, the excellent fatigue characteristic t was little aged even after $10^{10}$ cycles of switchings. The leakage current density and the dielectric constant of the SBT capacitor annealed in the oxygen atmosphere were respectively approximately $2.13\times10^{-9}$ [A/$cm^2$] and 340.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.2
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• pp.107-113
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• 2009

In order to improve air stability, we proposed a new active layer of an organic TFT by synthesizing P3HT/POSS conjugated polymer. P3HT/POSS OTFTs with the various P3HT/POSS volume ratios were fabricated and characterized. With the P3HT/POSS volume ratio of 1:1, we achieved the field-effect mobilities of ${\sim}1.19{\times}10^{-3}\;cm^2/v{\cdot}sec$ in the saturation region and the current on/off ratio of ${\sim}2.51{\times}10^2$. The resulting current on-off ratio was much higher than that of the P3HT-based OTFTs and resulted from the dramatic decrease of the off-current. Since the off-current can be reduced by preventing oxygen in atmosphere from doping the P3HT/POSS active layers, this new active layer shows its ability to avoid oxygen doping in atmosphere. Therefore, the improvement of the air stability can be achieved by employing the P3HT/POSS active layers.

• Journal of Ceramic Processing Research
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• v.13 no.spc1
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• pp.140-144
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• 2012

Ga-doped ZnO (GZO) was a limit of application on the photovoltaic devices such as CIGS, CdTe and DSSC requiring high process temperature, because it's electrical resistivity is unstable above 300 ℃ at atmosphere. Therefore, ZTO (zinc tin oxide) was introduced in order to improve permeability and thermal stability of GZO film. The resistivity of GZO (300 nm) single layer increased remarkably from 1.8 × 10-3Ωcm to 5.5 × 10-1Ωcm, when GZO was post-annealed at 400 ℃ in air atmosphere. In the case of the ZTO (150 nm)/GZO (150 nm) double layer, resistivity showed relatively small change from 3.1 × 10-3Ωcm (RT) to 1.2 × 10-2Ωcm (400 ℃), which showed good agreement with change of carrier density. This result means that ZTO upper layer act as a barrier for oxygen at high temperature. Also ZTO (150 nm)/GZO (150 nm) double layer showed lower WVTR compared to GZO (300 nm) single layer. Because ZTO has lower WVTR compared to GZO, ZTO thin film acts as a barrier by preventing oxygen and water molecules to penetrate on top of GZO thin film.

• Korean Journal of Materials Research
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• v.13 no.7
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• pp.420-423
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• 2003

Coatings of TiCrN ion-plated on a steel substrate was oxidized at $800^{\circ}C$ in air, and their oxidation mechanism was presented. During oxidation, substrate elements and Ti and Cr in the coating always diffused outwardly to form the oxide scale. Simultaneously, oxygen from the atmosphere diffused inward1y to react with Ti and Cr to form $TiO_2$and $Cr_2$$O_3$, respectively. Also, the counter-diffusion of cations and oxygen resulted in some oxygen dissolution in the unoxidized TiCrN coating, and Fe dissolution in the oxide scale. When the Ti content in the coating was high, the $TiO_2$-forming tendency was strong, while when the Cr content was high, the $Cr_2$$O_3$-forming tendency was strong.

• Journal of the Korean Ceramic Society
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• v.35 no.12
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• pp.1323-1328
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• 1998

The electrical conductivities of the yttria (8mol%) stabilizedzirconia-ceria solid solutions were measured as a function of oxygen partial between 80$0^{\circ}C$ and 100$0^{\circ}C$ using 4-probe d.c. method Under pure oxygen atmosphere the oxygen ionic conductivity of CeO2-ZrO2 decreased with the concentration of CeO2 Under reducing condition electronic conduction due to the redox equilibrium of Ce ion was observed. Total ionic and electronic conductivities fitted by a defect model enabled to determine the electronic transference number(tei) which increased with the concentration of CeO2 and with the degree of reduction.

• Journal of the Korean Society of Safety
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• v.16 no.4
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• pp.109-114
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• 2001

Explosive characteristics of the city gas were determined by using the gas explosion apparatues. The explosive range is determined between lower explosive limit of 5.0% and upper explosive limit of 15.3% at atmosphere and even though the oxygen concentration is decreased, lower explosive limit is not changed, but upper explosive limit is rapidly decreased. The minimum oxygen for combustion is determined 10%. The maximum explosion pressure is determined 5.72$\textrm{cm}^2$ and the maximum rate of explosion pressure rise is oxygen concentration of 12% to determined 160.12$\textrm{cm}^2{\cdot}$sec.

• Journal of the Semiconductor & Display Technology
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• v.15 no.1
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• pp.52-55
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• 2016

GZO film was prepared on p-type Si wafer and then annealed at various temperatures in an air conditions to research the bonding structures in accordance with the annealing processes. GZO film annealed in an atmosphere showed the various bonding structure depending on annealing temperatures and oxygen gas flow rate during the deposition. The difference of bonding structures of GZO films made by oxygen gas flows between 18 sccm and 22 sccm was so great. The bonding structures of GZO films made by oxygen gas flow of 18 sccm were showed the crystal structure, but that of 22 sccm were showed the amorphous structure in spite of after annealing processes. The bonding structure of GZO as oxide-semiconductor was observed the trend of becoming amorphous structures at the temperature of $200^{\circ}C$. Therefore, the characteristics of oxide semiconductor are needed to research the variation near the annealing at $200^{\circ}C$.

• Journal of the Korean Ceramic Society
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• v.20 no.2
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• pp.129-134
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• 1983

MgO.$Al_2O_3$ polycrstalline spinel powder was subjected to vaporization over the temperature range of 1150-130$0^{\circ}C$ under H2 atmosphere. Diffusion coefficient of oxygen ion through the spinel were calculated using the measure vaporization rates as follows : D=28.4 exp(-901500/RT) Reference data of the vaporization rates of MgO.$8Al_2O_3$ single crystal spinel were applied to the vaporiza-tion model proposed in this study and were calculated to give the oxygen ion diffusion coefficients over the tempera-ture 1700-195$0^{\circ}C$. The obtained diffusion coefficients are as follows: $D=3.20{\times}106$ exp(-155600/RT)