• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2007년도 춘계학술대회
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• pp.561-564
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• 2007

FCEV uses electric energy which generated from the reaction between Hydrogen and Oxygen in fuel cell stack as driving force. As fossil fuels are exhausted, fuel cell is regarded as a potent substitute for next generation energy source, and thus, most of car-makers make every efforts to develop fuel cell electric vehicle (FCEV). In addition, fuel cell is also beneficial in aspect of environment, because only clean water is produced during chemical reaction process instead of harmful exhausted gas. Generally, Hydrogen is supplied from high-pressured fuel tank, and air blower (or compressor) supply Oxygen by pressurizing ambient air. Air blower which is driven by high speed motor consumes about $7{\sim}8$ % of energy generated from fuel cell stack. Therefore, the efficiency of an air blower is directly linked with the performance of FCEV. This study will present the development process of an air blower and its consisting parts respectively.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2006년도 추계학술대회
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• pp.417-420
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• 2006

FCEV uses electric energy generated from the reaction between Hydrogen and Oxygen in fuel cell stack as driving force. As fossil fuels are exhausted, fuel cell is regarded as a potent substitute for next generation energy source, and thus, most of car-makers make every efforts to develop fuel cell electric vehicle (FCEV). In addition, fuel cell is also beneficial in aspect of environment, because only clean water is produced during chemical reaction process instead of harmful exhausted gas. Generally, Hydrogen is supplied from high-pressured fuel tank, and air blower (or compressor) supplies Oxygen by pressurizing ambient air. Air blower which is driven by high speed motor consumes about $7{\sim}8%$ of energy generated from fuel cell stack. Therefore, the efficiency of an air blower is directly linked with the overall performance of FCEV. This study will present developing process of an air blower and its consisting parts respectively.

• 반도체디스플레이기술학회지
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• 제21권1호
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• pp.12-16
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• 2022

We have investigated the effect of the substrate temperature and hydrogen flow rate on the characteristics of IGZO thin films for the TCO (transparent conducting oxide). For this purpose, IGZO thin films were deposited by RF magnetron sputtering at room temperature and 300℃ with various H₂ flow rate. Experiments were carried out while varying the hydrogen gas flow rate from 0sccm to 1.0sccm in order to see how the hydrogen gas affects the IGZO thin films. IGZO thin films deposited at room temperature and 300℃ showed amorphous. The lowest resistivity value was 0.379×10^-5 Ωcm when the IGZO film was deposited at 300℃ and set up at 1.0sccm. As the oxygen vacancy rate increased, the resistivity intended to decrease. In conclusion, Oxygen vacancy affects the IGZO thin film's electrical characteristic.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1996년도 추계학술대회 논문집
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• pp.79-81
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• 1996

We fabricated SrTiO$_3$thin film capacitor on the Ag/Si-wafer by RF sputtering deposition. And I-V characteristics and structual analysis of the thin film capacitor are investigated. We found that the leakage current of the films during deposition is strongly denpent on the ambient gas and substrate temperature. Because of increase of activation energy, leakage current increased at high temperature and resistivity of the films was decreased. According to the increase of oxygen gas flow rate, the conductivity of thin film capacitor was increased and leakage current was decreased.

• 센서학회지
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• 제8권1호
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• pp.24-31
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• 1999

감도가 우수하고 동작온도가 낮으며 반응속도가 빠른 암모니아 가스 센서를 제작하기 위해 ZnO에 촉매불순물 $MoO_3$의 첨가비와 박막 성장분위기 가스를 변화시키면서 RF 마그네트론 스펏터링 방법으로 박막을 성장하였다. 전기적 안정성을 향상시키기 위해 성장된 박막들을 aging 하여 센서를 제작한 후 암모니아 가스의 검지 특성을 조사하였다. 촉매불순물을 첨가하거나 산소분위기에서 성장된 박막의 경우 감도가 향상되었으며, 이는 표면 캐리어 농도와 전자이동도의 증가를 나타냈다. ZnO에 $MoO_3$를 무게비로 0.875 wt.% 첨가한 박막으로 제작한 센서가 160 ppm의 암모니아 가스 농도와 $300^{\circ}C$의 동작온도에서 70정도의 최대감도를 보였다. 산소분위기에서 $330^{\circ}C$로 72시간 동안 aging한 박막으로 만든 센서는 감도가 57정도로 감소하였으나, 센서의 동작온도가 $250^{\circ}C$로 낮아졌고, 선형성이 좋았으며 더 안정된 특성을 나타냈다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.185-185
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• 2011

ZnTe semiconductor is very attractive materials for optoelectronic devices in the visible green spectral region because of it has direct bandgap of 2.26 eV. The prototypes of ZnTe light emitting diodes (LEDs) have been reported [1], showing that their green emission peak closely matches the most sensitive region of the human eye. Another application to photovoltaics proved that ZnTe is useful for the production of high-efficiency multi-junction solar cells [2,3]. By using the pulse laser deposition system, ZnTe thin films were deposited on ZnO thin layer, which is grown on (0001) Al2O3substrates. To produce the plasma plume from an ablated ZnO and ZnTe target, a pulsed (10 Hz) YGA:Nd laser with energy density of 95 mJ/$cm^2$ and wavelength of 266 nm by a nonlinear fourth harmonic generator was used. The laser spot focused on the surface of the ZnO and ZnTe target by using an optical lens was approximately 1 mm2. The base pressure of the chamber was kept at a pressure around $10^{-6}$ Torr by using a turbo molecular pump. The oxygen gas flow was controlled around 3 sccm by using a mass flow controller system. During the ZnTe deposition, the substrate temperature was $400^{\circ}C$ and the ambient gas pressure was $10^{-2}$ Torr. The structural properties of the samples were analyzed by XRD measurement. The optical properties were investigated by using the photoluminescence spectra obtained with a 325 nm wavelength He-Cd laser. The film surface and carrier concentration were analyzed by an atomic force microscope and Hall measurement system.

• 한국추진공학회:학술대회논문집
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• 한국추진공학회 2010년도 제35회 추계학술대회논문집
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• pp.5-8
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• 2010

본 논문에서 연구하고자 하는 분사기는 다단 연소 사이클 엔진 연소기에 적용하는 분사기이다. 본 분사기에서 연료는 접선홀을 통해 와류 형상으로 분무되며, 예연소기에서 생성된 산화제 과잉 가스는 중앙에서 jet의 형태로 공급된다. 이러한 기체-액체 분사기의 상압/고압환경에서의 분무특성 및 분사기의 리세스에 따른 분무특성의 차이를 알아보았다. 이러한 결과들은 향후 다단 연소 사이클 엔진 개발의 기본 데이터로 활용될 수 있을 것이다.

• 한국통신학회논문지
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• 제35권11A호
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• pp.1091-1096
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• 2010

Stiction in microelectromechanical systems (MEMS) has been a major failure mechanism. Especially, in RF MEMS switches, moving parts often suffered in-use and release related stiction problems. Some materials and methods have been used to prevent this problem. Diamond-like carbon (DLC) has not only been used as a protective material owing to its good mechanical properties but also has been used as a hydrophobic material. Its properties could be controlled by post annealing treatment in various conditions. We synthesized DLC films using a radio frequency plasma enhanced chemical vapor deposition (RF PECVD) method on silicon substrates using methane ($CH_4$) and hydrogen ($H_2$) gas. Then, the change of the hydrophobic property of the films was investigated undervarious annealing temperatures in nitrogen and in oxygen ambient. The films, that were annealed above $700^{\circ}C$ in nitrogen ambient, showed a high contact angle of water (> $90^{\circ}$) even though their mechanical property was sacrificed to some degree. The structural variation and the changes of the hydrophobic and mechanical properties of the DLC films were analyzed by Raman spectrum, contact angle measurement, surface profiler, and a nanoindentation test.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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• pp.442-443
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• 2006

Electrical, optical, surface, and structural properties of amorphous indium zinc oxide (IZO) films grown on $SiO_2$/PES/$SiO_2$ substrate by a RF sputtering in pure Ar ambient at room temperature were investigated. A sheet resistance of $13.5\;{\Omega}{\square}$, average transmittance above 85 % in 550 nm, and root mean square roughness of $10.5\;{\AA}$ were obtained even in the IZO layers grown at room temperature in pure Ar ambient. Without addition of oxygen gas during IZO sputtering process, we can obtain high quality IZO anode films from the specially synthesized oxygen rich IZO target. XRD result shows that the IZO films grown at room temperature is completely amorphous structure due to low substrate temperature. In addition, the electrical and optical properties of the flexible OLED fabricated on IZO/$SiO_2$/PES/$SiO_2$ is critically influenced by the electrical properties of a IZO anode. This findings indicate that the IZO/$SiO_2$/PES/$SiO_2$ is a promising anode/substrate scheme for realizing organic based flexible displays.

• 한국진공학회지
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• 제21권5호
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• pp.273-278
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• 2012

현재 Hf (Hafnium)을 기반으로한 게이트 유전체의 연구는 여러 분야에서 다양하게 진행되어져 왔다. 이는 기존의 $SiO_2$보다 유전상수 값이 크고, 또한 계속되는 scaling-down 공정에서도 양자역학적인 터널링을 차단하는 특성이 뛰어나기 때문이다. MOSFET 구조에서 유전체 박막의 두께 감소로 인한 전기적 특성 저하를 보완하기 위해서 high-K 재료가 대두되었고 현재 주를 이루고 있다. 그러나 현재까지 $HfO_2$에 대한 nano-mechanical 특성 연구는 부족한 상태이므로 본 연구에서는 게이트 절연층으로 최적화하기 위하여 $HfO_2$ 박막의 nano-mechanical properties를 자세히 조사하였다. 시료는 rf magnetron sputter를 이용하여 Si (silicon) 기판 위에 Hafnium target으로 산소유량(4, 8 sccm)을 달리하여 증착하였고, 이후 furnace에서 400에서 $800^{\circ}C$까지 질소분위기에서 20분간 열처리를 실시하였다. 실험결과 산소 유량을 8 sccm으로 증착한 시료가 열처리 온도가 증가할수록 누설전류 특성 성능이 우수 해졌다. Nano-indenter로 측정하고 Weibull distribution으로 정량적 계산을 한 결과, $HfO_2$ 박막의 stress는 as-deposited 시료를 기준으로 $400^{\circ}C$에서는 tensile stress로 변화되었다. 그러나 온도가 증가(600, $800^{\circ}C$)할수록 compressive stress로 변화 되었다. 특히, $400^{\circ}C$ 열처리한 시료에서 hardness 값이 (산소유량 4 sccm : 5.35 GPa, 8 sccm : 5.54 GPa) 가장 감소되었다. 반면에 $800^{\circ}C$ 열처리한 시료에서는(산소유량 4 sccm : 8.09 GPa, 8 sccm : 8.17 GPa) 크게 증가된 것을 확인하였다. 이를 통해 온도에 따른 $HfO_2$ 박막의 stress 변화를 해석하였다.