• Title/Summary/Keyword: Oxygen Incorporation

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Nitrogen-incorporated (Ba, Sr)$TiO_3$ thin films fabricated by r.f.- magnetron sputtering

  • Lim, Won-Taeg;Jeong, Yong-Kuk;Lee, Chang-Hyo
    • Journal of Korean Vacuum Science & Technology
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    • v.4 no.4
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    • pp.97-101
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    • 2000
  • In this study, two kinds of barium strontium titanate (BST) samples were prepared. One is a conventional BST film that is sputtered in a mixture of argon and oxygen. The other is a nitrogen-incorporated BST film that is sputtered in a mixture of oxygen and intentionally added nitrogen instead of argon gas. The structural properties of both of the BST films had not changed significantly with the species of sputtering gas. However, the leakage current of BST films sputtered at ($N_2$+O$_2$) atmosphere was lower than those sputtered at (Ar +O$_2$) atmosphere: 1.9$\times$10$^{-8}$ A/cm$^2$ at 2V for the films prepared at (Ar +O$_2$) atmosphere and 8.6$\times$10$^{-9}$ A/cm$^2$ for the films at ($N_2$+O$_2$) atmosphere. From an XPS analysis, it has been found that nitrogen atoms are incorporated in BST films with a concentration of 1.92 at% and form a certain oxynitride phase. It is proposed that nitrogen atoms are able to fill the oxygen vacancies of BST films during sputtering process, and then the leakage current reduces due to a decrease in the vacancies. The BST films sputtered at ($N_2$+O$_2$) atmosphere have superior electrical properties to the films sputtered at (Ar +O$_2$), without any significant structural changes.

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Photoluminescence of ZnGa2O4-xMx:Mn2+ (M=S, Se) Thin Films

  • Yi, Soung-Soo
    • Transactions on Electrical and Electronic Materials
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    • v.4 no.6
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    • pp.13-16
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    • 2003
  • Mn-doped $ZnGa_{2}O_{4}$:$Mn^{2+}$ (M=S, Se) thin film phosphors have been grown using a pulsed laser deposition technique under various growth conditions. The structural characterization carr~ed out on a series of $ZnGa_{2}O_{4}$:$Mn^{2+}$ (M=S, Se) films grown on MgO(l00) substrates usmg Zn-rich ceramic targets. Oxygen pressure was varied from 50 to 200 mTorr and Zn/Ga ratio was the function of oxygen pressure. XRD patterns showed that the lattice constants of the $ZnGa_{2}O_{4}$:$Mn^{2+}$ (M=S, Se) thin film decrease with the substitution of sulfur and selenium for the oxygen in the $ZnGa_2O_4$. Measurements of photoluminescence (PL) properties of $ZnGa_{2}O_{4}$:$Mn^{2+}$ (M=S, Se) thin films have indicated that MgO(100) is one of the most promised substrates for the growth of high quality $ZnGa_2O_{4-x}M_{x}$:$Mn^{2+}$ (M=S, Se) thin films. In particular, the incorporation of Sulfur or Selenium into $ZnGa_2O_4$ lattice could induce a remarkable increase in the intensity of PL. The increasing of green emission intensity was observed with $ZnGa_2O_{3.925}Se_{0.075}:$Mn^{2+}$ and $ZnGa_2O_{3.925}S_{0.05}$:$Mn^{2+}$ films, whose brightness was increased by a factor of 3.1 and 1.4 in comparison with that of $ZnGa_{2}O_{4}$:$Mn^{2+}$ films, respectively. These phosphors may promise for application to the flat panel displays.

Preparation and Electrical Properties of Manganese-incorporated Neodymium Oxide System

  • Jong Sik Park;Keu Hong Kim;Chul Hyun Yo;Sung Han Lee
    • Bulletin of the Korean Chemical Society
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    • v.15 no.9
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    • pp.713-718
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    • 1994
  • Manganese-incorporated neodymium oxide systems with a variety of Mn mol% were prepared to investigate the effect of doping on the electrical properties of neodymium oxide. XRD, XPS, SEM, DSC, and TG techniques were used to analyze the specimens. The systems containing 2, 5, 8, and 10 mol% Mn were found to be solid solutions by X-ray diffraction analysis and the lattice parameters were obtained for the single-phase hexagonal structure by the Nelson-Riley method. The lattice parameters, a and c, decreased with increasing Mn mol%. Scanning electron photomicrographs of the specimens showed that the grain size decreased with increasing Mn mol%. The curves of log conductivity plotted as a function of 1/T in the temperature range from 500 to 1000$^{\circ}C$ at $PO_2$'s of $10^{-5}$ to $10^{-1}$ atm for the specimens were divided into high-and low-temperature regions with inflection points near 820-890$^{\circ}C$. The activation energies obtained from the slopes were 0.53-0.87 eV for low-temperature region and 1.40-1.91 eV for high-temperature region. The electrical conductivities increased with increasing Mn mol% and $PO_2$, indicating that all the specimens were p-type semiconductors. At $PO_2$'s below $10^{-3}$ atm, the electrical conductivity was affected by the chemisorption of oxygen molecule in the temperature range of 660 to 850$^{\circ}C$. It is suggested that electron holes generated by oxygen incorporation into the oxide are charge carriers for the electrical conduction in the high-temperature region and the system includes ionic conduction owing to the diffusion of oxygen atoms in the low-temperature region.

The Effect of Ion-Beam Treatment on TiO2 Coatings Deposited on Polycarbonate Substrates

  • Park, Jung-Min;Lee, Jai-Yeoul;Lee, Hee-Young;Park, Jae-Bum
    • Transactions on Electrical and Electronic Materials
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    • v.11 no.6
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    • pp.266-270
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    • 2010
  • The effect of an Ar plasma treatment on polycarbonate substrates was investigated using $TiO_2$ coatings produced by reactive ion-beam assisted sputtering. The typical pressure used during sputtering was about $10^{-4}$ Torr. After the Ar plasma treatment, the contact angle of a water droplet was reduced from $88^{\circ}$ to $52^{\circ}$ and then further decreased to $12^{\circ}$ with the addition of oxygen into the chamber. The surface of the polycarbonate substrate hanged from hydrophobic to hydrophilic with these treatments and revealed its changing nano-scale roughness. The $TiO_2$ films on the treated surface showed various colors and periodic ordering dependant on the film thickness due to optical interference.

Enhanced Luminescence of $SrTiO_3:Pr^{3+}$by Incorporating with $Li^+$ or $Na^+$Ion

  • Tian, Lianhua;Mho, Sun-Il;Bae, Hyun-Sook;Yu, Byung-Yong;Pyun, Chong-Hong
    • 한국정보디스플레이학회:학술대회논문집
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    • 2002.08a
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    • pp.819-821
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    • 2002
  • Photoluminescenc (PL) and low-voltage cathodoluminescence (CL) characteristics of $[xSrTiO_3+(1-x)Li_2TiO_3]:Pr^{3+}$ and $[xSrTiO_3+(1-x)Na_2TiO_3]:Pr^{3+}$ systems were investigated. The red luminescence intensities of these compounds are enhanced remarkably by the incorporation of $Li^+$ or $Na^+$ ion as compared to that of $SrTiO_3:Pr^{3+}$. The enhanced luminescence is speculated to result from both the charge compensation of $Pr^{3+}$ site and oxygen vacancies generated in the lattices by $Li^+$ or $Na^+$ ion.

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Modeling Fresh Produce Respiration and Designing Modified Atmosphere Package

  • Lee, Dong-Sun
    • KOREAN JOURNAL OF PACKAGING SCIENCE & TECHNOLOGY
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    • v.13 no.3_4
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    • pp.113-120
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    • 2007
  • The method to characterize the fresh produce respiration was presented with possible application of modified atmosphere package design. Particularly the respiration model based on enzyme kinetics was introduced as function of oxygen and carbon dioxide concentrations. The method to estimate the equilibrated package atmosphere for any package conditions was presented by incorporation of $O_2$ and $CO_2$ permeabilities of the packaging film. Temperature dependences for fresh produce respiration and gas permeation were given by Arrhenius equation and then used to analyze the effect of temperature on the package atmosphere. An example analysis was presented for better understanding of the concept.

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Synthesis of ternary ZnMgO nanostructures through thermal evaporation (열기상증착법을 이용한 3원계 MgZnO 나노구조의 합성)

  • Kong, Bo-Hyun;Kim, Dong-Chan;Cho, Hyung-Koun
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2006.06a
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    • pp.184-185
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    • 2006
  • Two-step growth to incorporate the Mg atoms in the ZnO nanorods fabricate by thermal evaporation process and also utilized the ZnO film as a template. In the first step of low temperature, Zn seed metals with low melting temperature formed the droplet, and then MgZnO ternary nanorods were grown by injecting oxygen and evaporating Mg atoms in high temperature process of the second step. The vertical growth of the MgZnO nanorods with large-area distribution and uniformity was successfully performed on the ZnO template. We investigated the shape of the vertically grown 1-D MgZnO nanorods and characterized the optical and crystal properties. We confirmed the incorporation of Mg atoms by the EDS and PL spectrum.

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Catalytic Oxygenation of Alkenes and Alkanes by Oxygen Donors Catalyzed by Cobalt-Substituted Polyoxotungstate

  • 남원우;양숙정;김형록
    • Bulletin of the Korean Chemical Society
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    • v.17 no.7
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    • pp.625-630
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    • 1996
  • The cobalt-substituted polyoxotungstate [(CoPW11O39)5-] has been used as a catalyst in olefin epoxidation and alkane hydroxylation reactions. The epoxidation of olefins by iodosylbenzene in CH3CN yielded epoxides predominantly with trace amounts of allylic oxidation products. cis-Stilbene was streoselectively oxidized to cis-stilbene oxide with small amounts of trans-stilbene oxide and benzaldehyde formation. The epoxidation of carbamazepine (CBZ) by potassium monopersulfate in aqueous solution gave the corresponding CBZ 10,11-oxide product. Other transition metal-substituted polyoxotungstates (M=Mn2+, Fe2+, Ni2+, and Cu2+) were inactive in the CBZ epoxidation reaction. The cobalt-substituted polyoxotungstate also catalyzed the oxidation of alkanes with m-chloroperbenzoic acid to give the corresponding alcohols and ketones. The presence of CH2Br2 in the hydroxylation of cyclohexane afforded the formation of bromocyclohexane, suggesting the participation of cyclohexyl radical. In the 18O-labeled water experiment, there was no incorporation of 18O into the cyclohexanol product when the hydroxylation of cyclohexane by MCPBA was carried out in the presence of H218O. Some mechanistic aspects are discussed as well.

Optical investigation of high critical-current $Gd_{1+x}Ba_{2-x}Cu_3O_7$ coated conductors

  • Kim, G.;Jo, W.;Park, D.Y.;Cheong, H.;Shin, G.M.;Yoo, S.I.
    • Progress in Superconductivity and Cryogenics
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    • v.10 no.2
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    • pp.24-26
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    • 2008
  • [ $Gd_{1+x}Ba_{2-x}Cu_3O_7$ ] (GdBCO) coated conductors on IBAD-MgO templates have grown by pulsed laser deposition. Critical current of the films were measured as about 90 A/cm by a four-probe method. The optical response of the films was investigated by Raman scattering spectroscopy. According to the Raman scattering spectra, the peaks at $328\;cm^{-1}$, $451\;cm^{-1}$, $504\;cm^{-1}$ were found and assigned to one $B_{1g}$ mode and two $A_{1g}$ modes, respectively. The high critical-current carrying behaviors of the GdBCO coated conductors are ascribed to their 123-structure without exchange of cation and incorporation of oxygen into the cuprates.