• KOREAN JOURNAL OF PACKAGING SCIENCE & TECHNOLOGY
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• v.25 no.1
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• pp.1-10
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• 2019

Environmental evaluation of two different oxygen high barrier films were performed using life cycle assessment. One of the films (traditional film) was composed of aluminum oxide coated PET film, ink, LDPE and LLDPE. Another film (new film) was consists of PET, ink, protein based coating material, LDPE, LLDPE. Main layer to achieve the high oxygen barrier for traditional film was aluminum oxide coated PET film, whereas the protein based coating material act as oxygen barrier layer for new film. Functional unit of this study was 1000 pouches made of traditional and new film. System boundary was factory to gate. The results of this study revealed that the new film shows better environmental performance for most of impact indicator than traditional film, except marine eutrophication and fine particulate matter formation due to extra coating process in new film system.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.210-210
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• 2012

Gas barrier coating from dense thin film deposition has been one of the important applications such as food-packaging and organic display. Especially for food-packaging, plastic container has been widely used due to its low price and high through-put in mass production. However, the plastic container with low surface energy like polypropylene (PP) has been limited to apply gas barrier coating. That is because a gas barrier coating could not adhere to PP due to its too low surface energy and high porosity of PP. In this research, we applied carbon coating consisting of Si and O as an interlayer between silicon oxide (SiOx) and PP. A carbon layer was found to provide better adhesion, which was experimentally proved by oxygen transmission rate (OTR) and SEM images. However, we also found that there is a limitation in the maximum thickness of a carbon layer and SiOx film due to their high stress level. For this conflict, we obtain the optimal thickness of a carbon layer and SiOx film showing optimal gas barrier property.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.100-101
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• 2012

The plasma damage free and room temperature processedthin film deposition technology is essential for realization of various next generation organic microelectronic devices such as flexible AMOLED display, flexible OLED lighting, and organic photovoltaic cells because characteristics of fragile organic materials in the plasma process and low glass transition temperatures (Tg) of polymer substrate. In case of directly deposition of metal oxide thin films (including transparent conductive oxide (TCO) and amorphous oxide semiconductor (AOS)) on the organic layers, plasma damages against to the organic materials is fatal. This damage is believed to be originated mainly from high energy energetic particles during the sputtering process such as negative oxygen ions, reflected neutrals by reflection of plasma background gas at the target surface, sputtered atoms, bulk plasma ions, and secondary electrons. To solve this problem, we developed the NBAS (Neutral Beam Assisted Sputtering) process as a plasma damage free and room temperature processed sputtering technology. As a result, electro-optical properties of NBAS processed ITO thin film showed resistivity of $4.0{\times}10^{-4}{\Omega}{\cdot}m$ and high transmittance (>90% at 550 nm) with nano- crystalline structure at room temperature process. Furthermore, in the experiment result of directly deposition of TCO top anode on the inverted structure OLED cell, it is verified that NBAS TCO deposition process does not damages to the underlying organic layers. In case of deposition of transparent conductive oxide (TCO) thin film on the plastic polymer substrate, the room temperature processed sputtering coating of high quality TCO thin film is required. During the sputtering process with higher density plasma, the energetic particles contribute self supplying of activation & crystallization energy without any additional heating and post-annealing and forminga high quality TCO thin film. However, negative oxygen ions which generated from sputteringtarget surface by electron attachment are accelerated to high energy by induced cathode self-bias. Thus the high energy negative oxygen ions can lead to critical physical bombardment damages to forming oxide thin film and this effect does not recover in room temperature process without post thermal annealing. To salve the inherent limitation of plasma sputtering, we have been developed the Magnetic Field Shielded Sputtering (MFSS) process as the high quality oxide thin film deposition process at room temperature. The MFSS process is effectively eliminate or suppress the negative oxygen ions bombardment damage by the plasma limiter which composed permanent magnet array. As a result, electro-optical properties of MFSS processed ITO thin film (resistivity $3.9{\times}10^{-4}{\Omega}{\cdot}cm$, transmittance 95% at 550 nm) have approachedthose of a high temperature DC magnetron sputtering (DMS) ITO thin film were. Also, AOS (a-IGZO) TFTs fabricated by MFSS process without higher temperature post annealing showed very comparable electrical performance with those by DMS process with $400^{\circ}C$ post annealing. They are important to note that the bombardment of a negative oxygen ion which is accelerated by dc self-bias during rf sputtering could degrade the electrical performance of ITO electrodes and a-IGZO TFTs. Finally, we found that reduction of damage from the high energy negative oxygen ions bombardment drives improvement of crystalline structure in the ITO thin film and suppression of the sub-gab states in a-IGZO semiconductor thin film. For realization of organic flexible electronic devices based on plastic substrates, gas barrier coatings are required to prevent the permeation of water and oxygen because organic materials are highly susceptible to water and oxygen. In particular, high efficiency flexible AMOLEDs needs an extremely low water vapor transition rate (WVTR) of $1{\times}10^{-6}gm^{-2}day^{-1}$. The key factor in high quality inorganic gas barrier formation for achieving the very low WVTR required (under ${\sim}10^{-6}gm^{-2}day^{-1}$) is the suppression of nano-sized defect sites and gas diffusion pathways among the grain boundaries. For formation of high quality single inorganic gas barrier layer, we developed high density nano-structured Al2O3 single gas barrier layer usinga NBAS process. The NBAS process can continuously change crystalline structures from an amorphous phase to a nano- crystalline phase with various grain sizes in a single inorganic thin film. As a result, the water vapor transmission rates (WVTR) of the NBAS processed $Al_2O_3$ gas barrier film have improved order of magnitude compared with that of conventional $Al_2O_3$ layers made by the RF magnetron sputteringprocess under the same sputtering conditions; the WVTR of the NBAS processed $Al_2O_3$ gas barrier film was about $5{\times}10^{-6}g/m^2/day$ by just single layer.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.30 no.2
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• pp.78-81
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• 2020

Quantum dot efficiency was increased to evaluate reliability and optical characteristics using incidental materials. Quantum dot was manufactured by wrapping a sandwich type quantum layer using a product with a barrier property to prevent water and oxygen because it is vulnerable to oxygen and moisture. We used the three quantum dot films consisting of quantum dot only and quantum dot products consisting of film and barrier film combined with PET in the quantum dot product to evaluate the change over 650 hours under high temperature and high humidity conditions at 60℃ and 90 % humidity. As a result, the quantum dot product with Barrier Film has lowered luminance by 8 %, CIE x by 2 % and CIE y by 8 %. Quantum dot products exposed to moisture and oxygen were oxidized and measured low before measurement.

• Elastomers and Composites
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• v.54 no.3
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• pp.175-181
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• 2019

The research and development of high-performance polymer materials with excellent gas barrier properties has gained considerable attention from the viewpoint of expanding their applications in various fields, including tire automobile parts and the polymer film industry. Natural rubber (NR) has been widely used as a rubber material in real-life, but its application is limited owing to its poor gas barrier properties. In this paper, we study the gas barrier properties of NR, epoxidized natural rubber (ENR), and their blend compositions by using molecular simulation. The results show that ENR-50 has superior oxygen barrier properties than those of NR. Moreover, the oxygen barrier properties of a blend of NR/ENR-50 improve with increasing volume fraction of ENR-50. The trend of improved oxygen barrier properties of NR, ENR-50, and their blend is in good agreement with experimental observations.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.29A no.9
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• pp.29-35
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• 1992

Dielectric thin film of N/O (Si$_{3}N_[4}/SIO_{2}$) for high density stacked dynamic-RAM cell was formed by LPCVD and oxidation(Dry & pyrogenic oxidation methods) of the top Si$_{3}N_[4}$ film. The thickness, structure and composition of this film were measured by ellipsometer, high frequency C-V meter, high resolution TEM, AES, and SIMS. The thickness limit of Si$_{3}N_[4}$ film in making thin N/O structure layer was 7nm. In this experiment, the film with thinner than 7nm was not thick enough as oxygen diffusion barrier, and oxygen punched through the film and interfacial oxidation occurred at the phase boundary between Si$_{3}N_[4}$ and polycrystalline silicon electrode.

• Korean Journal of Materials Research
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• v.8 no.12
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• pp.1090-1098
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• 1998

$RuO_2$ thin films were deposited on Si and Ru/Si substrates by rf magnetron reactive sputtering and annealed in oxygen atmosphere(1atm) to investigate their thermal stability and diffusion barrier property. $RuO_2$ thin films were thermally stable up to 700\ulcorner for 10min. in oxygen atmosphere and showed excellent barrier property against the interdiffusion of silicon and oxygen. After annealing at $750^{\circ}C$ , however, volatilization to higher oxide occurred at the surface and inside of $RuO_2$ thin film and diffusion barrier property was also deteriorated. When annealed at $800^{\circ}C$, $RuO_2$thin film showed a different microstructure from that of $RuO_2$ thin film annealed at 75$0^{\circ}C$. It is likely that surface defect structure of $RuO_2$, $RuO_3$, and excess oxygen had an influence on the mode of volatilization with increasing annealing temperature.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.806-809
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• 2009

Epoxy functionalized organic-inorganic hybrid materials (hybrimers) were synthesized by sol-gel reaction for application in OLED barrier coating. By using the calcium degradation method, the oxygen transition rate (OTR) and water vapor transition rate (WVTR) measured so far is $10^{-2}cc/m^2$-day for oxygen and $10^{-1}g/m^2$-day for water molecules with single hybrimer coating film, respectively. Encapsulated OLED devices have life time of 14hrs of a single hybrimer barrier coating and 29hrs of hybrimer/inorganic double barrier coatings at $25^{\circ}C$ and 60% relative humidity.

• Conservation Science in Museum
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• v.16
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• pp.96-113
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• 2015

High-barrier films are used to store cultural heritage objects in a safe environment sealed from oxygen and moisture. One of the high-barrier films use populary E manufactured by Japanese company M from the 1990's. However, this product has stayed in wide use, due to dearth of research on related subjects - including studies comparing it with other similar products-, in spite of the fact that high price information about its characteristics and environmental conditions is largely lacking. This study examines the characteristics of a number of high-barrier films with the goal to establish environmental standards for safer conservation of cultural heritage objects. E by the Japanese manufacturer M is compared with four other films; an electronics packaging films by a Korean firm, a film specially produced for the purposes of experiment in this study and a zipper bag-type film. Experiments were performed to compare the properties and gas blocking ability of the films by looking at their cross-section and measuring the thickness, tensile strength, elongation, absorbance of UV and visible light, yellowing and the permeability for oxygen and vapor. Based on these experiments, there are observed changes under different environmental conditions and depending on the length of use through temparature and humidification reproucing test. The results showed that while the high-barrier film by the Korean manufacturer was suitable for use as a packaging material for cultural heritage objects, the zipper bag-type film (P) was ill-adapted for this purpose. Based on the experiments reproducing the real-world environment, the length of useful life was also determined for each.

• Proceedings of the KIEE Conference
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• 1996.07c
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• pp.1816-1818
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• 1996

A micro-size nonthermal plasma generator, using a $SiO_2$ film as a dielectric barrier, has been studied experimentally for a high frequency ac voltage in 2LPM oxygen gas fed. The $SiO_2$ film as a micro-size dielectric barrier was made by the wet oxidation of n-type Si wafer($220[{\mu}mt]$). It can be generated ozone, as a nonthermal plasma intensity parameter, at very low level of applied voltage about 1[kV] by using the micro-size dielectric barrier. As a result, in case that have no air gap spacing i.e. surface discharge case shows relatively higher ozone concentration rather than that case of the micro-airgap spacing.