• 한국포장학회지
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• 제25권1호
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• pp.1-10
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• 2019

이번 연구에서는 식품 포장재로 많이 활용하고 있는 산소 고차단성 필름 두 종류의 환경 영향을 평가하는 것이었다. Table 4의 경우 환경 영향 모델에 따라 계산된 Traditional film과 New film의 각 환경 영향 범주 별 비교 값 및 이러한 차이를 보인 가장 영향력 있는 공정을 설명하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.210-210
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• 2012

Gas barrier coating from dense thin film deposition has been one of the important applications such as food-packaging and organic display. Especially for food-packaging, plastic container has been widely used due to its low price and high through-put in mass production. However, the plastic container with low surface energy like polypropylene (PP) has been limited to apply gas barrier coating. That is because a gas barrier coating could not adhere to PP due to its too low surface energy and high porosity of PP. In this research, we applied carbon coating consisting of Si and O as an interlayer between silicon oxide (SiOx) and PP. A carbon layer was found to provide better adhesion, which was experimentally proved by oxygen transmission rate (OTR) and SEM images. However, we also found that there is a limitation in the maximum thickness of a carbon layer and SiOx film due to their high stress level. For this conflict, we obtain the optimal thickness of a carbon layer and SiOx film showing optimal gas barrier property.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.100-101
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• 2012

The plasma damage free and room temperature processedthin film deposition technology is essential for realization of various next generation organic microelectronic devices such as flexible AMOLED display, flexible OLED lighting, and organic photovoltaic cells because characteristics of fragile organic materials in the plasma process and low glass transition temperatures (Tg) of polymer substrate. In case of directly deposition of metal oxide thin films (including transparent conductive oxide (TCO) and amorphous oxide semiconductor (AOS)) on the organic layers, plasma damages against to the organic materials is fatal. This damage is believed to be originated mainly from high energy energetic particles during the sputtering process such as negative oxygen ions, reflected neutrals by reflection of plasma background gas at the target surface, sputtered atoms, bulk plasma ions, and secondary electrons. To solve this problem, we developed the NBAS (Neutral Beam Assisted Sputtering) process as a plasma damage free and room temperature processed sputtering technology. As a result, electro-optical properties of NBAS processed ITO thin film showed resistivity of $4.0{\times}10^{-4}{\Omega}{\cdot}m$ and high transmittance (>90% at 550 nm) with nano- crystalline structure at room temperature process. Furthermore, in the experiment result of directly deposition of TCO top anode on the inverted structure OLED cell, it is verified that NBAS TCO deposition process does not damages to the underlying organic layers. In case of deposition of transparent conductive oxide (TCO) thin film on the plastic polymer substrate, the room temperature processed sputtering coating of high quality TCO thin film is required. During the sputtering process with higher density plasma, the energetic particles contribute self supplying of activation & crystallization energy without any additional heating and post-annealing and forminga high quality TCO thin film. However, negative oxygen ions which generated from sputteringtarget surface by electron attachment are accelerated to high energy by induced cathode self-bias. Thus the high energy negative oxygen ions can lead to critical physical bombardment damages to forming oxide thin film and this effect does not recover in room temperature process without post thermal annealing. To salve the inherent limitation of plasma sputtering, we have been developed the Magnetic Field Shielded Sputtering (MFSS) process as the high quality oxide thin film deposition process at room temperature. The MFSS process is effectively eliminate or suppress the negative oxygen ions bombardment damage by the plasma limiter which composed permanent magnet array. As a result, electro-optical properties of MFSS processed ITO thin film (resistivity $3.9{\times}10^{-4}{\Omega}{\cdot}cm$, transmittance 95% at 550 nm) have approachedthose of a high temperature DC magnetron sputtering (DMS) ITO thin film were. Also, AOS (a-IGZO) TFTs fabricated by MFSS process without higher temperature post annealing showed very comparable electrical performance with those by DMS process with $400^{\circ}C$ post annealing. They are important to note that the bombardment of a negative oxygen ion which is accelerated by dc self-bias during rf sputtering could degrade the electrical performance of ITO electrodes and a-IGZO TFTs. Finally, we found that reduction of damage from the high energy negative oxygen ions bombardment drives improvement of crystalline structure in the ITO thin film and suppression of the sub-gab states in a-IGZO semiconductor thin film. For realization of organic flexible electronic devices based on plastic substrates, gas barrier coatings are required to prevent the permeation of water and oxygen because organic materials are highly susceptible to water and oxygen. In particular, high efficiency flexible AMOLEDs needs an extremely low water vapor transition rate (WVTR) of $1{\times}10^{-6}gm^{-2}day^{-1}$. The key factor in high quality inorganic gas barrier formation for achieving the very low WVTR required (under ${\sim}10^{-6}gm^{-2}day^{-1}$) is the suppression of nano-sized defect sites and gas diffusion pathways among the grain boundaries. For formation of high quality single inorganic gas barrier layer, we developed high density nano-structured Al2O3 single gas barrier layer usinga NBAS process. The NBAS process can continuously change crystalline structures from an amorphous phase to a nano- crystalline phase with various grain sizes in a single inorganic thin film. As a result, the water vapor transmission rates (WVTR) of the NBAS processed $Al_2O_3$ gas barrier film have improved order of magnitude compared with that of conventional $Al_2O_3$ layers made by the RF magnetron sputteringprocess under the same sputtering conditions; the WVTR of the NBAS processed $Al_2O_3$ gas barrier film was about $5{\times}10^{-6}g/m^2/day$ by just single layer.

• 한국결정성장학회지
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• 제30권2호
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• pp.78-81
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• 2020

양자점은 산소와 수분에 취약하기 때문에 수분과 산소를 막아줄 수 있는 베리어 특성을 가진 제품을 이용하여 샌드위치 형식 양자점 층을 감싸는 형태로 제조하여 양자점의 광학적 신회성을 평가하였다. 다른 보호막이 없는 양자점 레진으로만 이루어진 필름, 양자점 필름과 PET를 합지한 필름 및 베리어 필름을 합지한 양자점 필름, 3가지를 이용하여 온도 60℃, 습도 90 %인 고온고습 조건에서 650시간 동안 변화를 평가를 진행하였다. 베리어 필름과 합지한 양자점 필름 제품은 휘도와 CIE x 및 CIE y 값이 유지되는 반면 PET와 합지한 양자점 필름 제품은 휘도 8 %, CIE x 2 % 및 CIE y 8 %가 낮아졌다. 또한 수분과 산소에 그대로 노출되었던 양자점 필름 제품은 측정 전부터 산화되어 낮게 측정되었으며 최종적으로 휘도 12 %, CIE x 9 % 및 CIE y 14 %가 낮게 측정되었다.

• Elastomers and Composites
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• 제54권3호
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• pp.175-181
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• 2019

The research and development of high-performance polymer materials with excellent gas barrier properties has gained considerable attention from the viewpoint of expanding their applications in various fields, including tire automobile parts and the polymer film industry. Natural rubber (NR) has been widely used as a rubber material in real-life, but its application is limited owing to its poor gas barrier properties. In this paper, we study the gas barrier properties of NR, epoxidized natural rubber (ENR), and their blend compositions by using molecular simulation. The results show that ENR-50 has superior oxygen barrier properties than those of NR. Moreover, the oxygen barrier properties of a blend of NR/ENR-50 improve with increasing volume fraction of ENR-50. The trend of improved oxygen barrier properties of NR, ENR-50, and their blend is in good agreement with experimental observations.

• 전자공학회논문지A
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• 제29A권9호
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• pp.29-35
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• 1992

Dielectric thin film of N/O (Si$_{3}N_[4}/SIO_{2}$) for high density stacked dynamic-RAM cell was formed by LPCVD and oxidation(Dry & pyrogenic oxidation methods) of the top Si$_{3}N_[4}$ film. The thickness, structure and composition of this film were measured by ellipsometer, high frequency C-V meter, high resolution TEM, AES, and SIMS. The thickness limit of Si$_{3}N_[4}$ film in making thin N/O structure layer was 7nm. In this experiment, the film with thinner than 7nm was not thick enough as oxygen diffusion barrier, and oxygen punched through the film and interfacial oxidation occurred at the phase boundary between Si$_{3}N_[4}$ and polycrystalline silicon electrode.

• 한국재료학회지
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• 제8권12호
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• pp.1090-1098
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• 1998

Rf 마그네트론 반응성 스퍼터링법으로 $RuO_2$박막을 Si 및 Ru/Si 기판 위에 증착한 뒤 산소 분위기 (1atm)에서 열처리를 하여 RuO$_2$박막의 열적 안정성 및 확산방지 특성을 연구하였다.$ RuO_2$박막은 산소 분위기 $700^{\circ}C$에서 10분까지 안정하여, 산소와 실리콘에 대한 우수한 확산방지 특성을 나타내었다 $750^{\circ}C$ 열처리시, 우선 성장 방위에 관계없이 RuO$_2$박막 표면 및 내부에서 휘발 반응이 일어남과 동시에 확산방지 특성은 저하되었다. 그러나 80$0^{\circ}C$ 열처리 시에는 $750^{\circ}C$ 열처리와는 다른 미세구조를 나타내었다. 이러한 열처리 온도에 따른 휘발반응에는 RuO$_2$의 표면 결함구조인 $RuO_3$와 증착시 박막내 함유된 과잉산소에 의한 결함 구조가 영향을 주는 것으로 판단된다.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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• pp.806-809
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• 2009

Epoxy functionalized organic-inorganic hybrid materials (hybrimers) were synthesized by sol-gel reaction for application in OLED barrier coating. By using the calcium degradation method, the oxygen transition rate (OTR) and water vapor transition rate (WVTR) measured so far is $10^{-2}cc/m^2$-day for oxygen and $10^{-1}g/m^2$-day for water molecules with single hybrimer coating film, respectively. Encapsulated OLED devices have life time of 14hrs of a single hybrimer barrier coating and 29hrs of hybrimer/inorganic double barrier coatings at $25^{\circ}C$ and 60% relative humidity.

• 박물관보존과학
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• 제16권
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• pp.96-113
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• 2015

고차단성 필름(Barrier films)은 문화재의 안전한 보존환경을 조성하기 위해 산소와 수분을 차단하는 수단으로 사용되고 있다. 1990년대부터 사용된 고차단성 필름 중 가장 대중적으로 사용해 온 제품은 일본 M 社의 E 필름을 들 수 있다. 그러나 수입품으로서 비교적 고가의 가격대를 형성하며 구성 재질의 특성과 보존환경 제어 체계에 대한 정보가 부족한 실정임에도 관련 연구나 유사 제품군의 비교가 미진했다고 볼 수 있다. 근간 국산 고차단성 필름의 제조 기술력은 첨단산업분야의 발달과 더불어 향상되어 왔기 때문에 제품별 특성을 파악하여 문화재 보존환경 제어에 적합한 필름을 찾고자 하였다. 비교 제품군으로 일본 M 사(社)의 E필름과 함께 국내에서 제작된 전자제품 포장용 필름, 실험을 위해 특수 제조한 필름, Zipper bag 형태의 필름 등 총 5종의 필름을 선정하였다. 실험은 필름의 단면, 재질별 두께, 인장강도 및 연신율, 자외·가시광 흡광도, 황변도, 산소 및 수증기 투과도를 측정하여 물성과 기체 차단력을 비교하였고 이를 바탕으로 온·습도 재현실험을 통해 실사용 시 외부 환경과 사용 기간에 따른 변화를 관찰하였다. 그 결과, 실험에 사용된 국산 고차단성 필름은 문화재 밀폐 포장용으로 적용이 가능하고 Zipper bag 형태의 P 필름은 문화재 보관 용도에 적절하지 않았다. 또한 재현실험을 바탕으로 각 필름의 밀폐 포장 시 적정 사용 기간을 검토하였다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1996년도 하계학술대회 논문집 C
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• pp.1816-1818
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• 1996

A micro-size nonthermal plasma generator, using a $SiO_2$ film as a dielectric barrier, has been studied experimentally for a high frequency ac voltage in 2LPM oxygen gas fed. The $SiO_2$ film as a micro-size dielectric barrier was made by the wet oxidation of n-type Si wafer($220[{\mu}mt]$). It can be generated ozone, as a nonthermal plasma intensity parameter, at very low level of applied voltage about 1[kV] by using the micro-size dielectric barrier. As a result, in case that have no air gap spacing i.e. surface discharge case shows relatively higher ozone concentration rather than that case of the micro-airgap spacing.