• Title/Summary/Keyword: Oxyfluoride

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IR Edge and Oxide Impurity Absorption in Heavy Metal Fluoride Glasses (플루오르화중금속 유리의 적외선에지 및 산화물(불수물) 흡수)

  • 정기호
    • Journal of the Korean Ceramic Society
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    • v.22 no.3
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    • pp.29-34
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    • 1985
  • The IR spectra of he heavy metal fluoride glasses showed peaks at $1, 400cm^{-1}$ or $1, 100cm^{-1}$ due to metal oxyfluoride impurities. The intensity of this band and hence the oxide impurity content of the glass could be reduced considerably by the use of reactive atmosphere melting under $CCl_4$ In comparison with the fundamental IR absorption band of heavy metal oxides the oxide impurity bands observed in the heavy metal fluoride glasses are multiphonon bands due to a 2-phonon absorption process. The envelope of the a vs. v curve beyond thue fundamental region shows the exponential fall off of a with increasing v-typical of intrinsic multiphonon absorption. In the multiphonon region the amount of structure is intermediate between that observed for covalent solids and that for ionic solids.

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Synthesis and Optical Property of a TiOF2 Powder via an Ultrasonic Spray Pyrolysis Process (초음파 분무 열분해 공정을 이용한 TiOF2 분말의 합성과 광학적 성질)

  • Hwangbo, Young;Lee, Young-In
    • Journal of Powder Materials
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    • v.23 no.4
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    • pp.307-310
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    • 2016
  • $TiOF_2$, which has remarkable electrochemical and optical properties, is used in various applications such as Li-ion batteries, electrochemical displays, and photocatalysts. In addition, it is possible to utilize the template which is allowed to synthesize fluorine doped $TiO_2$ powders with hollow or faceted structures. However, common synthesis methods of $TiOF_2$ powders have some disadvantages such as the use of expensive and harmful precursors and batchtype processes with a limited production scale. In this study, we report a synthetic route for preparing $TiOF_2$ powders by using an inexpensive and harmless precursor and a continuous ultrasonic spray pyrolysis process under a controlled atmosphere to address the aforementioned problems. The synthesized powder has an average size of $1{\mu}m$, a spherical shape, a pure $TiOF_2$ phase, and exhibits a band-gap energy of 3.2 eV.

Variation of Band Gap Energy upon Structural Distortion for Nb-containing Oxyfluorides (Nb를 포함하는 불소산화물에서 구조적 뒤틀림에 따른 에너지 띠 간격의 변화)

  • Kim, Hyun-Jun;Kim, Seung-Joo
    • Journal of the Korean Chemical Society
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    • v.51 no.3
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    • pp.265-269
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    • 2007
  • A comparative study on crystal structures and UV-visible diffuse reflectance spectra for Nb-containing oxyfluorides was performed to probe the relationship between energy band gap and local structure. The oxyfluorides, RbSrNb2O6F, RbCaNb2O6F and RbNb2O5F are commonly composed of the corner-sharing NbO5F octahedra as structural building units. The average Nb-O(F)-Nb bond angles, which can be a measure of the structural distortion, are 158.6° for RbSrNb2O6F, 149.6° for RbCaNb2O6F and 139.5° for RbNb2O5F. As the bond angle decreases, the band gap increases: 3.48eV for RbSrNb2O6F, 3.75eV for RbCaNb2O6F and 4.03 eV for RbNb2O5F. This experimental result implies that the band gap can be controlled with a range of 0.6 eV through a variation of local structure for the Nb-containing oxyfluorides.

Effect of AlF3 addition to the plasma resistance behavior of YOF coating deposited by plasma-spraying method (플라즈마-스프레이법에 의해 코팅한 옥시불화이트륨(YOF) 증착층의 플라즈마 내식성에 미치는 불화알루미늄(AlF3) 첨가 효과)

  • Young-Ju Kim;Je Hong Park;Si Beom Yu;Seungwon Jeong;Kang Min Kim;Jeong Ho Ryu
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.33 no.4
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    • pp.153-157
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    • 2023
  • In order to manufacture a semiconductor circuit, etching, cleaning, and deposition processes are repeated. During these processes, the inside of the processing chamber is exposed to corrosive plasma. Therefore, the coating of the inner wall of the semiconductor equipment with a plasma-resistant material has been attempted to minimize the etching of the coating and particle contaminant generation. In this study, we mixed AlF3 powder with the solid-state reacted yttrium oxyfluoride (YOF) in order to increase plasma-etching resistance of the plasma spray coated YOF layer. Effects of the mixing ratio of AlF3 with YOF powder on crystal structure, microstructure and chemical composition were investigated using XRD and FE-SEM. The plasma-etching ratios of the plasma-spray coated layers were calculated and correlation with AlF3 mixing ratio was analyzed.