• 제목/요약/키워드: Oxidizing gas

검색결과 134건 처리시간 0.027초

산화성 가스에 대한 SnO2모물질 가스센서의 감지특성 (Responses of SnO2-based Sensors for Oxidizing Gases)

  • 정해원;박희숙;김종명;윤기현
    • 한국세라믹학회지
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    • 제40권10호
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    • pp.973-980
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    • 2003
  • n-type 반도체인 SnO$_2$ 가스센서에서 첨가제가 산화성 가스에 대한 감지특성에 미치는 영향을 살펴보았다 SnO$_2$ 센서는 환원성 가스에 노출될 경우 전자 주게로 작용하여 저항이 감소하지만, 반대로 산화성 가스에 노출될 경우 전자 받게로 작용하여 저항이 증가하는 특성을 보인다 산화성 가스와 SnO$_2$ 분말 사이의 반응생성물을 가스 크로마토그래피 분석을 통하여 환원성 가스인 알콜의 반응 생성물과 비교하였다. PdC1$_2$혹은 A1$_2$O$_3$가 첨가된 센서는 산화성의 $CH_3$CN와 $CH_3$NO$_2$에 대해 동작온도에 따라 독특한 이중반응특성을 보였다. 이들 센서들의 조합과 패턴인식 기법을 이용하면 전자수용기를 가진 가스들에 대한 선택성을 높일 수 있을 것이다.

황산화 균주가 부착된 다공성 세라믹 biofilter를 이용한 $H_2S$ 제거 (Removal of Hydrogen Sulfide Using Porous Ceramic Biofilter Inoculated with Sulfur Oxidizing Bacteria)

  • 박상진;조경숙
    • 한국대기환경학회지
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    • 제15권5호
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    • pp.649-655
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    • 1999
  • Biofiltration of polluted gas streams contained $H_2S$ was studied. The experiments were performed in a laboratory-scale reactor with a porous ceramic media inoculated with sulfur oxidizing bacterium, TAS which was isolated from activiated sludge. The concentration of $H_2S$ in the inlet gas varied from 109 to 3,841 ppm, at the various space velocities(SV) of 50 $h^{-1}$ to 250 $h^{-1}$. Various tests have been conducted to evaluate the effects of such parameters as pH, concentration of sulfate ion and retention time on the pressure drop and maximum elimination capacity. The removal efficiency of $H_2S$ decreased as the $H_2S$ concentration or gas velocity increased in the inlet gas. Pressure drop was insignificant in this system. The maximum elimination capacity could reach up to 16.35g-S/kg-dry packing material/day.

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The Influences of Water Vapor/Hydrogen Ratio, Gas-Flow Rate and Antimony on the Surface Oxidation of Trip Steels

  • Kwon, Youjong;Zhu, Jingxi;Sohn, Il-Ryong;Sridhar, Seetharaman
    • Corrosion Science and Technology
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    • 제10권6호
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    • pp.189-193
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    • 2011
  • In the current paper, we are reporting the results from an investigation of the surface and sub-surface oxidation of a TRIP steel containing 2 wt.% Mn and 0.5 wt.% Al with and without 0.03 wt.% Sb. The oxidizing conditions in the gas were successively varied in terms of the linear gas flow-rate and dew-point, from conditions were gas-phase mass transport limited conditions prevailed, to those were solid state processes became the rate determining conditions. It was found, that at sufficient low oxidizing conditions (defined as flow-rate/dew-point), the metal surfaces were clear of any external oxides, and as the oxidizing conditions were increased, Mn- and Si- oxide nodules formed along with magnetite. As the oxidizing conditions were increased further, a dense magnetite layer was present. The limits of the various regions were experimentally quantified and a proposed hypothesis for their occurrences is presented. No obvious effect of Sb was noted in this micro-structural research of the oxides that results from the various conditions investigated in this study.

산화촉매에 의한 자동차 배출가스중 HC 및 CO의 정화에 관한 실험적 연구 (An experimental study on emission control of HC and CO due to oxidizing catalyst)

  • 한영출;최규훈
    • 오토저널
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    • 제3권1호
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    • pp.46-53
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    • 1981
  • This paper describes emission control of hydrocarbon and carbon-monoxide due to oxidizing catalyst. The experiment was performed on a precious metal pelleted catalyst(Pt). The factors of the efficiency for purification due to oxidizing catalyst are space velocity, temperature, composition of exhaust gas and supplementary air. The experiment was carried out to control the factors of efficiency for purification. The results of experimental study show that temperature of catalytic converter, supplementary air and space velocity affected the efficiency for purification of hydrocarbon and carbon monoxide.

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산화물 초전도 박막 제작을 위한 오존의 평가 (Evaluation of Ozone for Oxide Superconductor Thin Film Fabrication)

  • 임중관;박용필;이희갑
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.2
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    • pp.1230-1233
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    • 2004
  • Ozone is useful oxidizing gas for the fabrication of oxide thin films. Accordingly researching on oxidizing gas is required. In order to obtain high quality oxide thin films, higher ozone concentration is necessary. In this paper oxidation property was evaluated relation between oxide gas pressure and inverse temperature(CuO reaction). The obtained condition was formulated by the fabrication of Cu metal thin film by co-deposition using the ion Beam Sputtering method. Because the CuO phase peak appeared at the XRD evaluation of the CuO thin film using ozone gas, this study has succeeded in the fabrication of the CuO phase at $825^{\circ}C$.

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BSCCO 박막 제작을 위한 산화가스의 특성 (Characteristics of Oxidizing Gas for BSCCO Thin Film Fabrication)

  • 임중관;박용필;장경욱;이희갑
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2005년도 춘계학술대회 논문집
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    • pp.110-113
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    • 2005
  • Ozone is useful oxidizing gas for the fabrication of BSCCO thin films. In order to obtain high quality oxide BSCCO thin films, higher ozone concentration is necessary. The growth rates of the films was set in the region from 0.17 to 0.27 nm/min. MgO(100) was used as a substrate. In this paper oxidation property was evaluated relation between oxide gas pressure and inverse temperature(CuO reaction). The obtained condition was formulated by the fabrication of Cu metal thin film by co-deposition using the Ion Beam Sputtering method. Because the CuO phase peak appeared at the XRD evaluation of the CuO thin film using ozone gas, this study has succeeded in the fabrication of the CuO phase at $825^{\circ}C$.

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초전도 박막 제작을 위한 산화 오존의 평가 (Evaluation of Oxidation Ozone for Superconductor Thin Film Growth)

  • 임중관;박용필;이희갑
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2004년도 제6회 학술대회 논문집 일렉트렛트 및 응용기술연구회
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    • pp.35-38
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    • 2004
  • Ozone is useful oxidizing gas for the fabrication of oxide thin films. Accordingly researching on oxidizing gas is required. In order to obtain high quality oxide thin films, higher ozone concentration is necessary. In this paper oxidation property was evaluated relation between oxide gas pressure and inverse temperature(CuO reaction). The obtained condition was formulated by the fabrication of Cu metal thin film by co-deposition using the Ion Beam Sputtering method. Because the CuO phase peak appeared at the XRD evaluation of the CuO thin film using ozone gas, this study has succeeded in the fabrication of the CuO phase at $825^{\circ}C$.

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