• 한국추진공학회지
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• 제11권1호
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• pp.57-63
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• 2007

산화제 과잉 예연소기는 고성능 닫힘형 액체추진로켓 시스템에 적용된다. 이러한 산화제 과잉 연소기는 산화제-연료 혼합비가 약 50이상에서 작동하므로, 예연소기에서 분무특성과 혼합성능이 연소 안정성에 큰 영향을 주게 된다. 본 연구에서는 예연소기에 적용 가능한 분사기를 설계하고, 유량측정 및 가시화 실험을 통해 연료 및 산화제의 분무각을 측정하고, Recess length에 따른 분무특성의 변화를 확인하여 산화제 과잉 예연소기 분사기의 분무특성을 연구하였으며, 이러한 실험결과는 산화제 과잉 예연소기 분사기를 설계할 수 있는 기초자료로 유용하게 활용될 수 있을 것이다.

• 대한기계학회논문집B
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• 제28권4호
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• pp.371-381
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• 2004

Numerical simulation of $CO_2$ addition effects to fuel and oxidizer streams on flame structure has been conducted with detailed chemistry in H$_2$-O$_2$ diffusion flames of a counterflow configuration. An artificial species, which displaces added $CO_2$ in the fuel- and oxidizer-sides and has the same thermochemical, transport, and radiation properties to that of added $CO_2$, is introduced to extract pure chemical effects in flame structure. Chemical effects due to thermal dissociation of added $CO_2$ causes the reduction flame temperature in addition to some thermal effects. The reason why flame temperature due to chemical effects is larger in cases of $CO_2$ addition to oxidizer stream is well explained though a defined characteristic strain rate. The produced CO is responsible for the reaction, $CO_2$＋H=CO＋OH and takes its origin from chemical effects due to thermal dissociation. It is also found that the behavior of produced CO mole fraction is closely related to added $CO_2$ mole fraction, maximum H mole fraction and its position, and maximum flame temperature and its position.

• 한국전기전자재료학회논문지
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• 제18권4호
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• pp.303-308
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• 2005

In this paper, the effects of oxidants on tungsten chemical mechanical polishing (CMP) process were investigated using three different oxidizers such as Fe(NO₃)₃, KIO₃ and H₂O₂. Moreover, the interaction between the tungsten film and the oxidizer was discussed by potentiodynamic polarization measurement with three different oxidizers, in order to compare the effects of W-CMP and electrochemical characteristics on the tungsten film as a function of oxidizer. As an experimental result, the tungsten removal rate reached a maximum at 5 wt％ Fe(NO₃)₃concentration, and when 5 wt％ H₂O₂was added in the slurry, the removal rate of W increased. Also, the microstructures of surface layer by atomic force microscopy(AFM) image were greatly influenced by the slurry chemical composition of oxidizers. It was shown that the surface roughness and removal rate of the polished surface were improved in Fe(NO₃)₃than KIO₃. The electrochemical results indicate that the corrosion current density of the 5 wt％ H₂O₂ and 5 wt％ H₂O/sub 2+/＋ 5 wt％ Fe(NO₃)₃was higher than the other oxidizers. Therefore, we conclude that the W-CMP characteristics are strongly dependent on the kinds of oxidizers and the amounts of oxidizer additive.

• 한국전기전자재료학회논문지
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• 제18권9호
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• pp.787-792
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• 2005

Chemical mechanical polishing(CMP) has become the process of choice for modem semiconductor devices to achieve both local and global planarization. CMP is a complex process which depends on numerous variables such as macro, micro and nano-geometry of pad, relative velocity between pad and wafer stiffness and dampening characteristics of pad, slurry, pH, chemical components of slurry, abrasive concentration, abrasive size, abrasive shape, etc. Especially, an oxidizer of chemical components is very important remove a target material in metal CMP process. This paper introduces the effect of oxidizer such as $H_2O_2,\;Fe(NO_3)_3\;and\;KIO_3$ in slurry for tungsten which is used in via or/and plug. Finally the duplex reacting mechanism of $oxidizer(H_2O_2)$ through adding the $catalyst(Fe(NO_3)_3)$ could acquire the sufficient removal rate in tungsten CMP.

• 한국소성가공학회:학술대회논문집
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• 한국소성가공학회 2006년도 춘계학술대회 논문집
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• pp.136-140
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• 2006

We are developing a vol-oxidizer which transforms the spent $UO_2$ pellets into the $U_3O_8$ power through oxidizing process. The vol-oxidizer consists of furnace, filter, heater and valve etc. When the filter is blocked by the powder, the internal pressure of the furnace is increased owing to the air flow restriction. Then, the furnace vessel is swelled and deformed by it. In this paper, we proposed a procedure of the thermal analysis for furnace vessel design of spent fuel vol-oxidizer. In this work, we determined the thickness of the furnace through analyzing the internal pressure and the thermal stress of the furnace with respect to various pressure and temperature. To analyze the thermal stress, we used ANSYS 8.0 for constructing a FEM model of the furnace, and then analyzed it based on the ASME code. We also surveyed the material property and yield stress of SUS304 with various temperature. Analysis results are compared with the yield stress of the material. We manufactured the furnace and conduct the verification experiments.

• 한국추진공학회:학술대회논문집
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• 한국추진공학회 2007년도 제29회 추계학술대회논문집
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• pp.389-392
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• 2007

별도의 가압장치가 없이 산화제탱크 내에 저장된 $N_2O$액체산화제가 공급될 때 액체에서 기체로의 상변화를 고려하여 $N_2O$액체 산화제의 유량공급특성을 예측하였다. 보다 정확한 산화제 공급특성을 계산하기 위해 산화제의 압력과 온도에 따른 $N_2O$의 물성치 변화를 고려하였으며 오리피스 형상과 토출계수 관계식을 이용하여 산화제 유량을 계산하였다. 그리고 산화제 공급에 따른 산화제탱크 내의 압력변화를 측정하고 해석결과와 비교하였다.

• 한국전산유체공학회:학술대회논문집
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• 한국전산유체공학회 2008년도 춘계학술대회논문집
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• pp.324-327
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• 2008

Two stage startup of high thrust liquid rocket engine can reduce the abrupt impulse to the vehicle and engine by changing oxidizer flow rate to the combustion chamber. Also it ensures stable ignition of combustion chamber against hard start and to prevent pump stall by the sudden supply of large mass flow rate. However high discharge pressure of oxidizer pump or temperature rise in gas generator may be a problem in applying the preliminary stage. To solve this problem, we analyzed the effect of the slope of oxidizer pump's head curve and the oxidizer mass flow rate to combustion chamber during preliminary stage using the rocket engine startup analysis code. A moderate slope(${\circleddash}{\sim}$-3) of head curve and 80% mass flow rate during preliminary stage can reduce the oxidizer pump discharge pressure by 15 to 20% comparing with the condition of ${\circleddash}$=-4.37 head curve and 70% mass flow rate. Also it can maintain the turbine inlet temperature rise within 50K from the nominal value.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.1
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• pp.370-373
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• 2003

As the integrated circuit device shrinks to the smaller dimension, the chemical mechanical polishing (CMP) process was required for the global planarization of inter-metal dielectric(IMD) layer with free-defect. However, as the IMD layer gets thinner, micro-scratches are becoming as major defects. Chemical-Mechanical Planarization(CMP) of conductors is a key process in Damascene patterning of advanced interconnect structure. The effect of alternative commerical slurries pads, and post-CMP cleaning alternatives are discuess, with removal rate, scratch dentisty, surface roughness, dishing, erosion and particulate density used as performance metrics. Electroplated copper depostion is a mature process from a historical point of view, but a very young process from a CMP persperspective. While copper electrodepostion has been used and stuidied for dacades, its application to Cu damascene wafer processing is only now ganing complete accptance in the semiconductor industry. The polishing mechanism of Cu CMP process has been reported as the repeated process of passive layer formation by oxidizer and abrasion action by slurry abrasives. however it is important to understand the effect of oxidizer on copper pasivation layer in order to obtain higher removal rate and non-uniformity during Cu-CMP process. In this paper, we investigated the effects of oxidizer on Cu-CMP process regarding the additional volume of oxidizer.

• Transactions on Electrical and Electronic Materials
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• 제6권1호
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• pp.29-32
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• 2005

Chemical mechanical polishing is an essential process in the production of copper-based chips. On this work, the stability of hydrogen peroxide ($H_{2}O_{2}$) as an oxidizer of copper CMP slurry has been investigated. $H_{2}O_{2}$ is known as the most common oxidizer in copper CMP slurry. But $H_{2}O_{2}$ is so unstable that its stabilization is needed using as an oxidizer. As adding KOH as a pH buffering agent, stability of $H_{2}O_{2}$ decreased. However, $H_{2}O_{2}$ stability in slurry went up with putting in small amount of BTA as a film forming agent. There was no difference of $H_{2}O_{2}$ stability between pH buffering agents KOH and TMAH at similar pH value. Addition of $H_{2}O_{2}$ in slurry in advance of bead milling led to better stability than adding after bead milling. Adding phosphoric acid resulted in the higher stability. Using alumina C as an abrasive was good at stabilizing for $H_{2}O_{2}$.

• 한국전기전자재료학회논문지
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• 제16권12S호
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• pp.1181-1186
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• 2003

Chemical Mechanical Polishing (CMP) is an essential dielectric planarization in multilayer microelectronic device fabrication. In the CMP process, it is necessary to minimize the extent of surface defect formation while maintaining good planarity and optimal material removal rates. The polishing mechanism of W-CMP process has been reported as the repeated process of passive layer formation by oxidizer and abrasion action by slurry abrasives. Thus, it is important to understand the effect of oxidizer on W passivation layer, in order to obtain higher removal rate (RR) and very low non-uniformity (NU %) during W-CMP process. In this paper, we compared the effects of oxidizer or W-CMP process with three different kind of oxidizers with 5 wt% hydrogen peroxide such as Fe(NO$_3$)$_3$, H$_2$O$_2$, and KIO$_3$. The difference in removal rate and roughness of W in stable and unstable slurries are believed to caused by modification in the mechanical behavior of Al$_2$O$_3$ particles in presence of surfactant stabilizing the slurry.