• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 춘계학술대회 논문집
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• pp.45-46
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• 2009

We have fabricated advanced metal-oxide-semiconductor (MOS) capacitors with thin (${\approx}10\;nm$) Inductive-Coupled Plasma (ICP) CVD $Si_xN_y$ dielectric layers and investigated electrical properties of nitrided $SiO_2$/4H-SiC interface after oxidizing the $Si_xN_y$ in dry oxidation and/or $N_2$ annealing. An improvement of electrical properties have been revealed in capacitance-voltage (C-V) and current density-electrical field (J-E) measurements if compared with non-annealed oxidized-SiN. The improvements of SiC MOS capacitors formed by oxidized-SiN have been explained in this paper.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2015년도 춘계학술대회 논문집
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• pp.131-132
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• 2015

$Ti_{0.26}Al_{0.16}Si_{0.01}N_{0.57}$ (at%) coatings were synthesized on stainless steel 304 by using arc ion plating systems (AIPS). Targets employed for the deposition were Ti, AlSi(67:33at%) and AlSi(82:18at%). The thickness of TiAlSiN coatings is $4{\mu}m$. The oxidation characteristics of the deposited coatings were studied by thermogravimetric analysis (TGA) in air between 800 and $900^{\circ}C$ for 75 hr. The oxide scale formed on the TiAlSiN coatings consisted of $rutile-TiO_2$ layer and ${\alpha}-Al_2O_3$. At $800^{\circ}C$, the coatings oxidized relatively slowly, and the scales were thin and adherent. When oxidized above $900^{\circ}C$, $TiO_2$ grew fast over the mixed oxide layer, and the oxide scale formed on TiAlSiN coatings was prone to spallation. Microstructural changes of the TiAlSiN coatings that occurred during high temperature oxidation were investigated by EPMA, XRD, SEM and TEM.

• 한국세라믹학회지
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• 제43권8호
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• pp.486-491
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• 2006

A new $TiN-Ti_5Si_3$ bulk composite was synthesized from preceramic, inorganic polymer (methylpolysilsesquioxane) and $TiH_2$ filler powders via polymer pyrolysis. Using this process, ceramics with high melting points can be produced relatively easily to a near net shape. The $TiN-Ti_5Si_3$ composite oxidized slowly during heating to $1000^{\circ}C$. During heating at the temperatures of at 700 and $800^{\circ}C$, TiN oxidized to Rutile-$TiO_2$ whereas $Ti_5Si_3$ resisted to oxidation. The oxide scale formed consisted primarily of $TiO_2$ containing $Ti_5Si_3$.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 추계학술대회 논문집
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• pp.115-115
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• 2009

Epitaxial ZnO film was grown on Si(111) substrate with oxidazed CrN buffer by plasma-assisted molecular beam epitaxy (PAMBE). The growth and structural properties are investigated. The single crystalline growth was revealed by in-situ RHEED analysis. Crystalline quality of ZnO film grown on oxidized CrN buffer was investigated by the X-ray rocking curves. The FWHMs of (0002) XRCs was $1.379^{\circ}$. This value was smaller than the ZnO film grown directly on (111) Si substrate.

• 한국세라믹학회지
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• 제26권3호
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• pp.390-394
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• 1989

The stored elastic strain energy due to the thermal expansion mismatch between the thermally oxidized crystalline layer (cristobalite) and CVD Si3N4($\alpha$-Si3N4) on cooling form high oxidation temperature (1000-140$0^{\circ}C$) to room temperature, releases through the crazing of film and lifting at the SiO2/Si3N4 interface. The ratial equation (1/n) which corresponds to the ratio of the relaxation of the stored elastic stain energy due to crazing of film to the total energy, is derived under the assumption of the square crazed pattern, as follow. 1/n={8${\gamma}$(1-v)2}/(ΔL2dE) The ratial equation suggests the reason for the lifting at the SiO2/Si3N4 interface which was observed in this research.

• 한국초전도ㆍ저온공학회논문지
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• 제18권1호
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• pp.33-36
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• 2016

Suppression of the superconducting transition temperature ($T_c$) of NbN thin films in superconductor/ferromagnet multilayers has been investigated. Both superconducting NbN and ferromagnetic FeN layers were deposited on thermally oxidized Si substrate at room temperature by using reactive magnetron sputtering in an $Ar-N_2$ gas mixture. The thickness of FeN films was fixed at 20 nm, while the thickness of NbN films was varied from 3 nm to 90 nm. $T_c$ suppression was clearly observed in NbN layers up to 70 nm thickness when NbN layer was in proximity with FeN layer. For a given thickness of NbN layer, the magnitude of $T_c$ suppression was increased in the order of Si/FeN/NbN, Si/NbN/FeN, and Si/FeN/NbN/FeN structure. This result can be used to design a spin switch whose operation is based on the proximity effect between superconducting and ferromagnetic layers.

• Corrosion Science and Technology
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• 제12권3호
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• pp.119-124
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• 2013

Nano-multilayered, crystalline AlTiSiN thin films were deposited on WC-TiC-Co substrates by the cathodic arc plasma deposition. The deposited film consisted of wurtzite-type AlN, NaCl-type TiN, and tetragonal $Ti_2N$ phases. Their oxidation characteristics were studied at 800 and $900^{\circ}C$ for up to 20 h in air. The WC-TiC-Co oxidized fast with large weight gains. By contrast, the AlTiSiN film displayed superior oxidation resistance, due mainly to formation of the ${\alpha}-Al_2O_3$-rich surface oxide layer, below which an ($Al_2O_3$, $TiO_2$, $SiO_2$)-intermixed scale existed. Their oxidation progressed primarily by the outward diffusion of nitrogen, combined with the inward transport of oxygen that gradually reacted with Al, Ti, and Si in the film.

• 한국세라믹학회지
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• 제28권1호
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• pp.53-59
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• 1991

The reaction product between Si3N4 and ZrO2 has been studied by heat treatment of Si3N4-Zr(Y)O2 composite in high vacuum(<10-5 torr) and in air at $700^{\circ}C$. ZrN was formed after heat treatment in vacuum and easily oxidized after heat treatment in air. The amount of ZrN is related to the Y2O3 content dissolved in ZrO2. After the heat treatment in air the toughness increased and the spalling due to the oxidation of ZrN in specimen surface was observed. As a result, it is suggested that the formation of ZrN phase in Si3N4-ZrO2 composite enhance the toughness of the composite in an oxidation conditon.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1993년도 하계학술대회 논문집 B
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• pp.1295-1297
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• 1993

Properties of oxynitride films oxidized by $N_2O$ gas after thermal oxidation and $N_2O$ oxide films directly oxidized using $N_2O$ gas on the bare silicon wafer have been studied. Through the AES analysis, Nitrogen pile-up at the interface of Si/oxynitride and Si/$N_2O$ oxide has observed. Also, it could be presumed that there are differences in the mechanism of the growth of film by observing film growth. $N_2O$ oxide and oxynitride films have the self-limited characteristics. Therefore, it will be possible to obtain ultra-thin films. Nitrogen pile-up at the interfaces Si/oxynitride and Si/$N_2O$ oxide strengthens film structure and improves dielectric reliability. Although fixed charge densities and interface trap densities of $N_2O$ oxide and oxynitride films has somewhat higher than those of thermal $SiO_2,\;N_2O$ oxide and oxynitride films showed improved I-V characteristics and constant current stress.

• 한국세라믹학회지
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• 제26권3호
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• pp.341-346
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• 1989

In order to evaluate the oxidation behavior of $\beta$-Sialon, $\beta$-Sialon ceramics was prepared from Si3N4, Al2O3, AlN and Y2O3 system. The specimens were oxidized in an oxygen atmosphere at 1, 20$0^{\circ}C$ for 9days. Oxidation behavior was evaluated by weight gain oxidation process, surface roughness. Microscopy, EDX and X-ray diffraction analysis were also used for the evaluation. The weight and surface roughness ofoxidized specimens were increased with increasing the oxidation time. Oxidized products were mullite, $\alpha$-cristobalite, yttrium aluminum oxide and yttrium silicate oxide.