Electrical properties of Metal-Oxide-Semiconductor (MOS) capacitor formed by oxidized-SiN (Oxidized-SiN으로 형성된 4H-SiC MOS capacitor.의 전기적 특성)
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- Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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- 2009.04b
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- pp.45-46
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- 2009