• Journal of the Korean Institute of Telematics and Electronics D
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• v.36D no.10
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• pp.17-22
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• 1999

In this paper, the results of the studies about a new proposal where the ONON(oxide-nitride-oxide-nitride) layer instead of the conventional ONO(oxide-nitride-oxide) layer is used as the IPD(inter-poly-dielectrics) layer to improve the data retention problem in the Flash EEPROM cell, have been discussed. For these studies, the stacked-gate Flash EEPROM cell with an about 10nm thick gate oxide and on ONO or ONON IPD layer have been fabricated. The measurement results have shown that the data retention characteristics of the devices with the ONO IPD layer are significantly degraded with an activation energy of 0.78 eV. which is much lower than the minimum value (1.0 eV) required for the Flash EEPROM cell. This is believed to be due to the partial or whole etching of the top oxide of the IPD layer during the cleaning process performed just prior to the dry oxidation process to grow the gate oxide of the peripheral MOSFET devices. Whereas the data retention characteristics of the devices with the ONON IPD layer have been found to be much (more than 50%) improved with an activation energy of 1.10 eV. This must be because the thin nitride layer on the top oxide layer in the ONON IPD layer protected the top oxide layer from being etched during the cleaning process.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.36D no.3
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• pp.34-40
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• 1999

Recently, the gate oxide damage induced by the plasma processes has been one of the most significant reliability issues as the gate oxide thickness falls below 10 nm. The plasma-induced damage was studied with the metal antenna test structures. In addition to the electron trapping, the hole trapping in a 10 nm thick gate oxide due to the plasma-induced charging was observed in the NMOS's with a metal antenna. The hole trapping caused the transconductance (gm) to be reduced like the case of the electron trapping, but to the extent much less than the electron trapping. It would be because the electrical stress that the plasma-induced charging forced to the gate oxide for the devices with the hole trapping was much smaller than for those with the electron trapping. This hypothesis was strongly supported by the measured characteristics of the Fowler-Nordheim current in the gate oxide.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.41 no.11
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• pp.7-13
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• 2004

Experimental results are presented for the degradation of 3 nm-thick gate oxide under -2.5V $\leq$ V$_{g}$ $\leq$-4.0V stress and 10$0^{\circ}C$ conditions using P and NMOSFETs that are annealed with hydrogen or deuterium gas at high-pressure (5 atm). The degradation mechanisms are highly dependent on stress conditions. For low gate voltage, hole-trapping is found to dominate the reliability of gate oxide both in P and NMOSFETs. With increasing gate voltage to V$_{g}$ =-4.0V, the degradation becomes dominated by electron-trapping in NMOSFETs, however, the generation rate of "hot" hole was very low, because most of tunneling electrons experienced the phonon scattering before impact ionization at the Si interface. Statistical parameter variations as well as the gate leakage current depend on and are improved by high-pressure deuterium annealing, compared to corresponding hydrogen annealing. We therefore suggest that deuterium is effective in suppressing the generation of traps within the gate oxide. Our results therefore prove that hydrogen related processes are at the origin of the investigated oxide degradation.gradation.

• Journal of the Korean Society of Safety
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• v.29 no.4
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• pp.34-41
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• 2014

The goal of this study is to investigate some crack behaviors which affect the crack propagation angle at the planar solid oxide fuel cell with cracks under the fabricating and operating temperature and analyze the stresses by 3 steps processing on the solid oxide fuel cell. Currently, there are lots of researches of the performance improvement for fuel cells, and also for the more powerful efficiency. However, the planar solid oxide fuel cell has demerits which the electrode materials have much brittle properties and the thermal condition during the operating process. It brings some problems which have lower reliability owing to the deformation and cracks from the thermal expansion differences between the electrolyte, cathode and anode electrodes. Especially the crack in the corner of the electrodes gives rise to the fracture and deterioration of the fuel cells. Thus it is important to evaluate the behavior of the cracks in the solid oxide fuel cell for the performance and safety operation. From the results, we showed the stress distributions from the cathode to the anode and the effects of the edge crack in the electrolyte and the slant crack in the anode. Futhermore the crack propagation angle was expected according to the crack length and slant angle and the variation of the stress intensity factors for the each fracture mode was shown.

• Proceedings of the KIEE Conference
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• 1993.07b
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• pp.1295-1297
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• 1993

Properties of oxynitride films oxidized by $N_2O$ gas after thermal oxidation and $N_2O$ oxide films directly oxidized using $N_2O$ gas on the bare silicon wafer have been studied. Through the AES analysis, Nitrogen pile-up at the interface of Si/oxynitride and Si/$N_2O$ oxide has observed. Also, it could be presumed that there are differences in the mechanism of the growth of film by observing film growth. $N_2O$ oxide and oxynitride films have the self-limited characteristics. Therefore, it will be possible to obtain ultra-thin films. Nitrogen pile-up at the interfaces Si/oxynitride and Si/$N_2O$ oxide strengthens film structure and improves dielectric reliability. Although fixed charge densities and interface trap densities of $N_2O$ oxide and oxynitride films has somewhat higher than those of thermal $SiO_2,\;N_2O$ oxide and oxynitride films showed improved I-V characteristics and constant current stress.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2004.09a
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• pp.201-209
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• 2004

As the European Community's Directive on the Restriction of Hazardous Substances in Electrical and Electronic Equipment banning lead (Pb) in electronics products will take effect on July 1, 2006, most electronics manufacturers will be commencing with volume production of Pb-free components by the middle of 2004. Electrodeposited pure tin finishes on electronic components are a leading contender to replace the industry standard tin-lead. Commensurate with this shift will be a somewhat steep learning curve as manufacturers adapt a variety of equipment and processes to contend with the issues surrounding this critical, industry-wide material conversion. Since the electrodeposited finish directly influences the critical reliability characteristics of the component itself, the nature of the Pb-free component finish must be well characterized and understood. Only through a thorough examination of the attributes of the electroplated tin deposit can critical decisions be made regarding component finish reliability. This paper investigates the properties of electrodeposited tin that may have an effect on component reliability, namely, grain structure (size and shape), oxide formation, tin whisker formation, and solderability. Data will be presented from laboratory and production settings, with the objective being to enable manufacturers to draw their own conclusions regarding previously established perceptions and misconceptions about electrodeposited tin properties.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.28 no.3
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• pp.26-31
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• 2014

High temperature fuel cell system, such as molten carbonate fuel cells(MCFC) and solid oxide fuel cells(SOFC), are capable of operating at MW rated power output. The power output change of high temperature fuel cell imposes the thermal and mechanical stresses on the fuel cell stack. To minimize the thermal-mechanical stresses on the stack and increase the systems reliability, we should divide the power plant configuration to several banks. However, the improvement of reliability in fuel cell power plant system causes an increase of the investment cost, for example, replacement costs, labor costs, and so on. For this reason - the balance between investment and reliability improvement - many studies about the appropriate level of investment have been conducted. In this paper, we evaluate the cost for operation and installation, the benefit for electric energy and thermal energy sales, and the system reliability for several cases : these cases relate with the bank configuration.

• Composites Research
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• v.36 no.3
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• pp.167-172
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• 2023

The manufacturing technology of composite material is applicable with filler characteristics maintaining low cost, flexibility, and easy process to develope the various functional composite materials. To realize functional composites, various researches on the high performance of composite materials using graphene as a filler is being actively conducted. In this study, physical and chemical properties were investigated using graphene to improve high functional properties. Graphene oxide (GO) was prepared using graphane nanoplatelet (GNP), and reduced graphene oxide (R-GO) was formed by reducing GO. The physical properties of GO and R-GO were analyzed, and the reliability of the manufactured method was reviewed by comparing that of GNP results. As a result of analysis by Raman spectroscopy, in the case of R-GO, it was confirmed that the intensity of D-peak and G-peak decreased compared to GO, and an increase of 0.08 was observed through the ratio of ID/IG. For the FTIR results, GO and RGO has a repeating C-C and C=C connection structure unlike GNP. GO and R-GO show clear peaks for C-O bond, C=C bond, C=O bond, and O-H bonding. As a result of X-ray diffraction analysis, GNP showed a wide diffraction peak at 25.86° of (002) plane characteristics, whereas GO and R-GO showed peaks corresponding to (001) and (100) planes. It was also found that the interlayer distance of GO increased by about 2.6 times compared to GNP.

• Proceedings of the IEEK Conference
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• 2000.06b
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• pp.40-43
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• 2000

The electrons and holes trapped in the tunneling oxide and interface-states generated in the Si/SiO$_2$ interface during program/erase (P/E) operations are known to cause reliability problems which can deteriorate the cell performance and cause the V$_{th}$ window close. This deterioration is caused by the accumulation of electrons and holes trapped in the oxide near the drain and source side after each P/E cycle. we propose three new erase schemes to improve the cell's endurance characteristics: (1)adding a Reverse soft program cycle after the source erase operation, (2)adding a detrapping cycle after the source erase operation, (3)adding a convergence cycle after the source erase operation. (3) is the most effective performance among the three erase schemes have been implemented and shown to significantly reduce the V$_{th}$ window close problem. And we are able to design the reliable periperal circuit of flash memory by using the (3).(3).

• ETRI Journal
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• v.30 no.6
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• pp.833-843
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• 2008

The effect of forward and reverse electrostatic discharge (ESD) on the electro-optical characteristics of oxide vertical-cavity surface-emitting lasers is investigated using a human body model for the purpose of understanding degradation behavior. Forward ESD-induced degradation is complicated, showing three degradation phases depending on ESD voltage, while reverse ESD-induced degradation is relatively simple, exhibiting two phases of degradation divided by a sudden distinctive change in electro-optical characteristics. We demonstrate that the increase in the threshold current is mainly due to the increase in leakage current, nonradiative recombination current, and optical loss. The decrease in the slope efficiency is mainly due to the increase in optical loss.