• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.450-450
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• 2012

In recent days, advances in ZnO-based oxide semiconductor materials have accelerated the development of thin-film transistors (TFTs), which are the building blocks for active matrix flat-panel displays including liquid crystal displays (LCD) and organic light-emitting diodes (OLED). In particular, the development of high-mobility ZnO-based channel materials has been proven invaluable; thus, there have been many reports of high-performance TFTs with oxide semiconductor channels such as ZnO, InZnO (IZO), ZnSnO (ZTO), and InGaZnO (IGZO). The reliability of oxide TFTs can be improved by examining more stable oxide channel materials. In the present study, we investigated the effects of an ALD-deposited water vapor permeation barrier on the stability of ZnO and HfZnO (HZO) thin film transistors. The device without the water vapor barrier films showed a large turn-on voltage shift under negative bias temperature stress. On the other hand, the suitably protected device with the lowest water vapor transmission rate showed a dramatically improved device performance. As the value of the water vapor transmission rate of the barrier films was decreased, the turn-on voltage instability reduced. The results suggest that water vapor related traps are strongly related to the instability of ZnO and HfZnO TFTs and that a proper combination of water vapor permeation barriers plays an important role in suppressing the device instability.

• Journal of the Microelectronics and Packaging Society
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• v.24 no.4
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• pp.53-57
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• 2017

The most representative transparent electrode in the modern society is ITO (Indium Tin Oxide). ITO is widely used in general for touch panels and displays due to its high electrical and optical properties. However, in general, mechanical deformation causes deterioration and destruction of device properties because ITO is basically vulnerable to mechanical deformation. Therefore, the in-depth understanding on the stability of ITO film during various mechanical deformations is necessary. In this study, the reliability and mechanical properties ITO sample having different length, width, and area were investigated. The electrical stability was estimated according to electrical resistance change. The stability was dropped as the sample length, and width increased and the sample area decreased. The electrical stability of ITO film was correlated with twisting strain including tensile, compressive and shear stress.

• Journal of the Korean Society of Safety
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• v.28 no.5
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• pp.5-9
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• 2013

Recently, eco-friendly sources of energy by fuel cells that use hydrogen as an energy source has emerged as the next generation of energy to solve the problem of environmental issues and exhaustion of energy. A solid oxide fuel cell(SOFC) classified based on the type of ion transfer mediator electrolyte has actively being researched. However, the reliability according to the thermal cycle is low during the operation of the fuel cell, and deformation problem comes from the difference in thermal expansion coefficient between the electrode material, the components made of ceramic material is also brittle, which means disadvantages in terms of the strength. Therefore, in this study, considering the states of the manufacturing and operating of SOFC single cells, the stress analyses in the each of the interfacial layer between the anode, electrolyte and the cathode were performed to get the basic data for reliability assessment of SOFC. The obtained results show that von Mises stress according to the thickness direction on operating state occurred maximum stress value in the electrolyte layer. And also the stresses inside the active area on a distance of 1 ${\mu}m$ from the electrode interface were estimated. Futhermore the evaluation was done for the variation of the stress according to the stage of the operation divided into three stages of manufacturing, stack, and operating.

• Journal of Energy Engineering
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• v.19 no.2
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• pp.62-72
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• 2010

Solid oxide fuel cells(SOFCs) directly convert the fuel gases to electric energy through electrochemical reactions. The advantage of SOFCs is that they easily operate with diversified fuels such as natural gases owing to their high temperature operation. However, high temperature operation also incurs the challenge in enhancing long term reliability and durability of SOFCs. The most commonly used anode material is Ni/YSZ. This has, however, some drawbacks in terms of long-term reliability at high temperatures, hydrocarbon fuel usages, and so on, therefore the need to develop the new anode materials increases. This article summarizes the trend of the novel anode materials development of SOFCs.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.4 no.2
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• pp.297-305
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• 2000

It is observed that the initial properties and degradation characteristics on plasma of n/p-MOSFET with polycide and poly-Si as different gate materials under F-N stress and hot electron stress are affected by metal AR(Antenna Ratio) during plasma process. Compared to that of MOS devices with poly-Si gate material, reliability properties on plasma of MOS devices with polycide gate material are improved. This can be explained by that fluorine of tungsten polycide process diffuses through poly-Si into gate oxide and results in additional oxide thickness. The fact that MOS devices with polycide gate material can reduce damages of plasma process shows possibility that polycide gate material can be used as gate material for next generation MOS devices.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.533-533
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• 2007

The stress effect of SiGe p-type metal oxide semiconductors field effect transistors(MOSFETs) has been investigated to compare device properties using Si bulk and partially depleted silicon on insulator(PD SOI). The electrical properties in SiGe PD SOI presented enhancements in subthreshold slope and drain induced barrier lowering in comparison to SiGe bulk. The reliability of gate oxides on bulk Si and PD SOI has been evaluated using constant voltage stressing to investigate their breakdown (~ 8.5 V) characteristics. Gate leakage was monitored as a function of voltage stressing time to understand the breakdown phenomena for both structures. Stress induced leakage currents are obtained from I-V measurements at specified stress intervals. The 1/f noise was observed to follow the typical $1/f^{\gamma}$ (${\gamma}\;=\;1$) in SiGe bulk devices, but the abnormal behavior ${\gamma}\;=\;2$ in SiGe PD SOI. The difference of noise frequency exponent is mainly attributed to traps at silicon oxide interfaces. We will discuss stress induced instability in conjunction with the 1/f noise characteristics in detail.

• Nuclear Engineering and Technology
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• v.39 no.3
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• pp.231-236
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• 2007

Due to the occasional occurrences of stress corrosion cracking(SCC) in steam generator tubing(Alloy 600), degraded tubes are removed from service by plugging or are repaired for re-use. Since electrodeposition inside a tube does not entail parent tube deformation, residual stress in the tube can be minimized. In this work, tube restoration via electrodeposition inside a steam generator tubing was performed after developing the following: an anode probe to be installed inside a tube, a degreasing condition to remove dirt and grease, an activation condition for surface oxide elimination, a tightly adhered strike layer forming condition between the electro forming layer and the Alloy 600 tube, and the condition for an electroforming layer. The reliability of the electrodeposited material, with a variation of material properties, was evaluated as a function of the electrodeposit position in the vertical direction of a tube using the developed anode. It has been noted that the variation of the material properties along the electrodeposit length was acceptable in a process margin. To improve the reliability of a material property, the causes of the variation occurrence were presumed, and an attempt to minimize the variation has been made. A Ni alloy electrodeposition process is suggested as a primary water stress corrosion cracking(PWSCC) mitigation method for various components, including steam generator tubes. The Ni alloy electrodeposit formed inside a tube by using the installed assembly shows proper material properties as well as an excellent SCC resistance.

• Journal of IKEEE
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• v.20 no.2
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• pp.163-166
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• 2016

It is important to operate the driving circuit under the optimal condition through precisely sensing the power consumption causing the temperature made mainly by the MOSFET (metal-oxide semiconductor field-effect transistor) when a BLDC (Brushless Direct Current) motor operates. In this letter, a Super-junction (SJ) power TMOSFET (trench metal-oxide semiconductor field-effect transistor) with an ultra-low specific on-resistance of $0.96m{\Omega}{\cdot}cm^2$ under the same break down voltage of 100 V is designed by using of the SILVACO TCAD 2D device simulator, Atlas, while the specific on-resistance of the traditional power MOSFET has tens of $m{\Omega}{\cdot}cm^2$, which makes the higher power consumption. The SPICE simulation for measuring the power distribution of 25 cells for a chip is carried out, in which a unit cell is a SJ Power TMOSFET with resistor arrays. In addition, the power consumption for each unit cell of SJ Power TMOSFET, considering the number, pattern and position of bonding, is computed and the power distribution for an ANSYS model is obtained, and the SJ Power TMOSFET is designed to make the power of the chip distributed uniformly to guarantee it's reliability.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.88-89
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• 2009

In this paper, we investigated about wet cleaning effect as deep trench formation methods for Power chip devices. Deep trench structure was classified by two methods, PSU (Poly Stick Up) and Non-PSU structure. In this paper, we could remove residue defect during wet. cleaning after deep trench etch process for non-PSU structure device as to change wet cleaning process condition. V-SEM result showed void image at the trench bottom site due to residue defect and residue component was oxide by EDS analysis. In order to find the reason of happening residue defect, we experimented about various process conditions. So, defect source was that oxide film was re-deposited at trench bottom by changed to hydrophobic property at substrate during hard mask removal process. Therefore, in order to removal residue defect, we added in-situ SCI during hard mask removal process, and defect was removed perfectly. And WLR (Wafer Level Reliability) test result was no difference between normal and optimized process condition.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.133-133
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• 2009

It is desirable to choose a high-k material having a large band offset with the tunneling oxide and a deep trapping level for use as the charge trapping layer to achieve high PIE (Programming/erasing) speeds and good reliability, respectively. In this paper, charge trapping and tunneling characteristics of high-k hafnium oxide ($HfO_2$) layer with various thicknesses were investigated for applications of tunnel barrier engineered nonvolatile memory. A critical thickness of $HfO_2$ layer for suppressing the charge trapping and enhancing the tunneling sensitivity of tunnel barrier were developed. Also, the charge trap centroid and charge trap density were extracted by constant current stress (CCS) method. As a result, the optimization of $HfO_2$ thickness considerably improved the performances of non-volatile memory(NVM).