• Nuclear Engineering and Technology
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• v.38 no.4
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• pp.391-398
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• 2006

It is recommended to clean steam generators of nuclear power plants during plant outages. Under normal operations, sludge is created and constantly accumulates in the steam generators. The constituents of this sludge are different depending on each power plant characteristics. The sludge of the Kori Unit 1 steam generator, far example, was found to be composed of 93% ferrous oxide, 3% carbon and 1% of silica oxide and nickel oxide each. The research to develop a lancing system that would remove sludge deposits from the tubesheet of a steam generator was started in 1998 by the Korea Electric Power Research Institute (KEPRI) of the Korea Electric Power Corporation (KEPCO). The first commercial domestic lancing system in Korea, the $KALANS^(R)-I$ Lancing System, was completed in 2000 for Kori Unit 1 for cleaning the tubesheet of its Westinghouse Delta-60 steam generator. Thereafter, the success of the development and site implementation of the $KALANS^(R)-I$ lancing system for YGN Units 1&2 and Ulchin Units 3&4 was also realized in 2004 for sludge removal at those sites. The upper bundle cleaning system for Westinghouse model F steam generators is now under development.

• Proceedings of the KIEE Conference
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• 2003.10a
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• pp.22-24
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• 2003

In this work, in order to investigate the effect of multiple lightning impulse currents on zinc oxide arrester blocks. We have been designed and fabricated a multi-impulse generator which can produce quintuple voltages with $1.2/50{\mu}s$ to 100kV and quintuple currents with $8/20{\mu}s$ to 12kA and we have evaluated the characteristics of zinc oxide arrester block using several electrical and physical methods after the multi-impulse test. It was found that the multi-impulse failures of ZnO arrester blocks were mainly caused by surface flashover and the multi-impulse currents test would be more suitable than single impulse current test in evaluation of the characteristics of zinc oxide arrester blocks corresponding to actual situations.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.323-326
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• 2003

In this paper, a new small size Lateral Trench Electrode Power MOSFET is proposed. This new structure, called "LTEMOSFET"(Lateral Trench Electrode Power MOSFET), is based on the conventional MOSFET. The entire electrode of LTEMOSFET is placed in trench oxide. The forward blocking voltage of the proposed LTEMOSFET is improved by 1.6 times with that of the conventional MOSFET. The forward blocking voltage of LTEMOSFET is 250V. At the same size, a increase of the forward blocking voltage of about 1.6 times relative to the conventional MOSFET is observed by using TMA-MEDICI which is used for analyzing device characteristics. Because the electrodes of the proposed device are formed in trench oxide, the electric field in the device are crowded to trench oxide. We observed that the characteristics of the proposed device was improved by using TMA-MEDICI and that the fabrication of the proposed device is possible by using TMA-TSUPREM4.

• Applied Chemistry for Engineering
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• v.17 no.2
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• pp.194-200
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• 2006

Titanium oxide films were deposited by the nozzle type HCP RT-MOCVD for the application of metal-oxide films. In the case of TTNB, after depositing films, films must be annealed at a proper temperature, but in the case of titanium ethoxide, titanium oxide films could be directly deposited by titanium ethoxide without general annealing. We could confirm that ratio of O to Ti in the films was about 2 : 1 at RF-power of 240 watt, distance between cathode and substrate of 3 cm, deposition time of 20 min, and ratio of Ar to $O_2$ of 1 : 1. Therefore, we could obtain the titanium oxide film deposited by the nozzle type HCP RT-MOCVD without an annealing process and could apply in the metal-oxide deposition process at a low temperature.

• Nuclear Engineering and Technology
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• v.41 no.1
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• pp.107-112
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• 2009

Corrosion of nickel-base alloys (Hastelloy C-276, Inconel 625, and Inconel X-750) in $500^{\circ}C$, 25MPa supercritical water (with 10 wppb oxygen) was investigated to evaluate the suitability of these alloys for use in supercritical water reactors. Oxide scales formed on the samples were characterized by gravimetry, scanning electron microscopy/energy dispersive spectroscopy, X-ray diffraction, and X-ray photoelectron spectroscopy. The results indicate that, during the 1000h exposure, a dense spinel oxide layer, mainly consisting of a fine Cr-rich inner layer ($NiCr_{2}O_{4}$) underneath a coarse Fe-rich outer layer ($NiFe_{2}O_{4}$), developed on each alloy. Besides general corrosion, nodular corrosion occurred on alloy 625 possibly resulting from local attack of ${\gamma}$" clusters in the matrix. The mass gains for all alloys were small, while alloy X -750 exhibited the highest oxidation rate, probably due to the absence of Mo.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.9-12
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• 2004

In this paper, a new small sized Lateral Trench Electrode Power MOS was proposed. This new structure, called LTEMOS(Lateral Trench Electrode Power MOS), was based on the conventional lateral power MOS. But the entire electrodes of LTEMOS were placed in trench oxide. The forward blocking voltage of the proposed LTEMOS was improved by 1.5 times with that of the conventional lateral power MOS. The forward blocking voltage of LTEMOS was about 240 V. At the same size, an improvement of the forward blocking voltage of about 1.5 times relative to the conventional MOS was observed by using ISE-TCAD which was used for analyzing device's electrical characteristics. Because all of the electrodes of the proposed device were formed in each trench oxide, the electric field was crowded to trench oxide and punch-through breakdown was occurred, lately.

• Korean Chemical Engineering Research
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• v.47 no.1
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• pp.105-110
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• 2009

IZO thin films have been deposited on poly(ethylene terephthalate) flexible substrate under varying radio frequency (rf) power, process pressure and thickness of IZO films using rf magnetron sputtering under $Ar/O_2$ gas mix. As the process pressure increased, the deposition rate was slightly increased and the transmittance showed little change, but the resistivity was increased. With increasing rf power, the great increase in deposition rate was observed but the transmittance showed a slight change only, and the resistivity was decreased. In addition, an attempt was made to find the optimal thickness of IZO films under varying the thickness of IZO films at the process conditions of 1 mTorr pressure and 90 W rf power, which showed lowest resistivity. IZO thin films with the thickness of $1,500{\AA}$ showed lowest resistivity and also showed highest transmittance around the wavelength zone of the maximum absorption. The power conversion efficiency of solar cells fabricated using various transparent electrodes with different thicknesses were measured and the solar cell with IZO electrode of $1,500{\AA}$ showed the maximum conversion-efficiency of 2.88 %.

• International Journal of Aeronautical and Space Sciences
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• v.11 no.3
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• pp.201-205
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• 2010

DC/DC Switching power converters are commonly used to generate regulated DC output voltages with high-power efficiencies from different DC input sources. A switching converter utilizes one or more energy storage elements such as capacitors, or transformers to efficiently transfer energy from the input to the output at periodic intervals. The fundamental boost converter studied here consists of a power metal-oxide semiconductor field effect transistor switch, an inductor, a capacitor, a diode, and a pulse-width modulation circuit with oscillator, amplifier, and comparator. A buck converter containing a switched-mode power supply is also studied. In this paper, the electrical characteristics of DC/DC power converters are simulated by simulation program with integrated circuit emphasis (SPICE). Furthermore, power efficiency was analyzed based on the specifications of each component.

• JSTS:Journal of Semiconductor Technology and Science
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• v.12 no.4
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• pp.449-457
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• 2012

The program/erase (P/E) cyclic endurances including bias temperature instability (BTI) behaviors of Metal-$Al_2O_3$-Nitride-Oxide-Semiconductor (MANOS) memories are investigated in comparison with those of Semiconductor-Oxide-Nitride-Oxide-Semiconductor (SONOS) memories. In terms of BTI behaviors, the SONOS power-law exponent n is ~0.3 independent of the P/E cycle and the temperature in the case of programmed cell, and 0.36~0.66 sensitive to the temperature in case of erased cell. Physical mechanisms are observed with thermally activated $h^*$ diffusion-induced Si/$SiO_2$ interface trap ($N_{IT}$) curing and Poole-Frenkel emission of holes trapped in border trap in the bottom oxide ($N_{OT}$). In terms of the BTI behavior in MANOS memory cells, the power-law exponent is n=0.4~0.9 in the programmed cell and n=0.65~1.2 in the erased cell, which means that the power law is strong function of the number of P/E cycles, not of the temperature. Related mechanism is can be explained by the competition between the cycle-induced degradation of P/E efficiency and the temperature-controlled $h^*$ diffusion followed by $N_{IT}$ passivation.

• Journal of the Korean institute of surface engineering
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• v.42 no.3
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• pp.128-132
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• 2009

Transparent conducting thin films of indium tin oxide(ITO) co-sputtered with aluminum-doped zinc oxide(AZO) were deposited on glass substrate by dual magnetron sputtering. It was found that the electrical properties and structural characteristics of the films are significantly changed according to the sputtering power of the AZO target. The IAZTO film prepared with D.C power of ITO at 100 W and R.F power of AZO at 50 W shows an electrical resistivity of $4.6{\times}10^{-4}{\Omega}{\cdot}cm$ and a sheet resistance of $30{\Omega}/{\square}$ (for 150 nm thick). Besides of the improvement of the electrical properties, compared to the ITO films deposited at the same process conditions, the IAZTO films have very smooth surface, which is due to the amorphous nature of the films. However, the electrical conductivity of the IAZTO films was found to be deteriorated along with the crystallization in case of the high temperature deposition (above $310^{\circ}C$). In this work, high quality amorphous transparent conductive oxide layers could be obtained by mixing AZO with ITO, indicating possible use of IAZTO films as the transparent electrodes in OLED and flexible display devices.