• Title/Summary/Keyword: Oxide phosphors

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Advances in oxide thin-film phosphors for field emission displays

  • Hao, J.H.
    • 한국정보디스플레이학회:학술대회논문집
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    • 2006.08a
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    • pp.263-267
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    • 2006
  • Advances in non-sulfur-containing phosphors from low-temperature synthesis of thin-films suitable for glass substrates are discussed. The effects of preparation process on the properties of a variety of rare-earth-doped oxide hosts are reviewed. Cathodoluminescent characteristics have been studied to determine the usefulness of oxide thin-film phosphors in field emission displays.

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An Approach to Develop New Ternary Oxide Phosphors;Reduction of Defects by Impurity Addition

  • Yamamoto, Hajime;Okamoto, Shinji
    • 한국정보디스플레이학회:학술대회논문집
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    • 2002.08a
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    • pp.239-242
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    • 2002
  • Luminescence efficiency of phosphors, $SrTiO_3;Pr^{3+}$ and $SrIn_2O_4:Pr^{3+}$, is increased remarkably by III-group impurities. This effect is explained by a picture that carriers thermally released from impurity-induced traps supply energy to $Pr^{3+}$ ions. The impurities also improve carrier transport efficiency by reducing lattice defects. This picture indicates a possibility to develop new ternary oxide phosphors.

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Protective Metal Oxide Coatings on Zinc-sulfide-based Phosphors and their Cathodoluminescence Properties

  • Oh, Sung-Il;Lee, Hyo-Sung;Kim, Kwang-Bok;Kang, Jun-Gill
    • Bulletin of the Korean Chemical Society
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    • v.31 no.12
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    • pp.3723-3729
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    • 2010
  • We investigated the high-excitation voltage cathodoluminescence (CL) performance of blue light-emitting (ZnS:Ag,Al,Cl) and green light-emitting (ZnS:Cu,Al) phosphors coated with metal oxides ($SiO_2$, $Al_2O_3$, and MgO). Hydrolysis of the metal oxide precursors tetraethoxysilane, aluminum isopropoxide, and magnesium nitrate, with subsequent heat annealing at $400^{\circ}C$, produced $SiO_2$ nanoparticles, an $Al_2O_3$ thin film, and MgO scale-type film, respectively, on the surface of the phosphors. Effects of the phosphor surface coatings on CL intensities and aging behavior of the phosphors were assessed using an accelerating voltage of 12 kV. The MgO thick film coverage exhibited less reduction in initial CL intensity and was most effective in improving aging degradation. Phosphors treated with a low concentration of magnesium nitrate maintained their initial CL intensities without aging degradation for 2000 s. In contrast, the $SiO_2$ and the $Al_2O_3$ coverages were ineffective in improving aging degradation.

고출력 LED용 형광체 재료 개발

  • Kim, Seon-Uk;Hwang, Jong-Hui
    • Ceramist
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    • v.21 no.1
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    • pp.80-97
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    • 2018
  • To realize a high luminous efficacy and a high emission color purity for the white-LEDs, the understanding for luminescence properties of the phosphors is significantly important because the performance of white-LEDs is directly affected by the luminescence properties of the phosphors. In this paper, therefore, we reviewed some commercially available $Eu^{2+}$- and $Ce^{3+}$- activated phosphors and discussed for the luminescence properties of these phosphors.

Nitride Phosphors for the Better Performance of WLEDs

  • Yoon, Chul-Soo
    • 한국정보디스플레이학회:학술대회논문집
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    • 2009.10a
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    • pp.49-49
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    • 2009
  • Phosphors with oxide host material, YAG:$Ce^{3+}$ and $(Ca,Sr,Ba)_2SiO_4:Eu^{2+}$ yellow phosphor, has been used for LED applications. The WLEDs using these phosphors are widely used for LCD backlighting, automobile, and general lighting applications since they have high conversion efficiency and good thermal and chemical stability which can meet necessary life time of LED products up to now. With advances of LED chip technology, the external quantum efficiency and driving current in chip get higher so that the phosphors for high power chip are required to maintain high conversion efficiency and stability at high temperature due to the heat dissipated from LED chips. In addition, higher color rendering index of LED lighting and color reproducibility of LCD than those of LEDs with single yellow phosphors are required. In order to overcome these technical issues rising from evolution of LED technology, new phosphors are in demand and nitride phosphors, one of the promising new candidate materials, will be discussed here.

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Effect of Ultrathin Film HfO2 by Atomic Layer Deposition on the Propreties of ZnS:Cu,Cl Phosphors (ZnS:Cu,Cl 형광체의 특성에 미치는 원자층 증착 초박막 HfO2의 영향)

  • Kim, Min-Wan;Han, Sand-Do;Kim, Hyung-Su;Kim, Hyug-Jong;Kim, Hyu-Suk;Kim, Suk-Whan;Lee, Sang-Woo;Choi, Byung-Ho
    • Korean Journal of Materials Research
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    • v.16 no.4
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    • pp.248-252
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    • 2006
  • An investigation is reported on the coating of ZnS:Cu,Cl phosphors by $HfO_2$ using atomic layer deposition method. Hafnium oxide films were prepared at the chamber temperature of $280^{\circ}C$ using $Hf[N(CH_3)_2]_4\;and\;O_2$ as precursors and reactant gas, respectively. XPS and ICP-MS analysis showed the surface composition of coated phosphor powder was hafnium oxide. In FE-SEM analysis, the surface morphology of uncoated phosphors became smoother and clearer as the number of ALD cycle increased from 900 to 1800. The photoluminescence intensity for coated phosphors showed $7.3{\sim}13.4%$ higher than that of uncoated. The effect means that the reactive surface is uniformly coated with stable hafnium oxide to reduce the dead surface layer without change of bulk properties and also its absorptance is almost negligible due to ultrathin(nano-scaled) films. The growth rate is about $1.1{\AA}/cycle$.

Low-voltage cathodoluminescent Characteristics of ZnGa$_2$O$_4$ : Mn phosphors

  • 조성희;유재수;이종덕;이중환
    • Journal of the Korean institute of surface engineering
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    • v.30 no.1
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    • pp.57-62
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    • 1997
  • Green-emitting $ZnGa_2O_4$ : Mn phosphors were synthesized by a thermal method and their low-voltage cathodoluminescent characteristics were examined for the field emitter display (FED) application. Low efficiency of $ZnGa_2O_4$ : Mn phosphors could be ascribed to the low penetration depth of into phosphors, which might results in charge accumulation on the phosphors screen. For increasing cathodoluminescent of $ZnGa_2O_4$ : Mn under low voltage excitation, wide band-gap oxide materials were added to the $ZnGa_2O_4$: Mn powder. It is found that the luminance can be increased by 20%. Measurement of leakage current on the phosphor screen shows that the enhancement of low-voltage cathodoluminescent by additive materials is mainly due to the consumption of surface charges on the phosphor.

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Preparation and Luminescent Characteristics of Phosphate-Based Phosphors (포페이트계열 형광체의 합성 및 광특성 평가)

  • Noh, Seh-Chul;Kim, You-Hyuk
    • Korean Journal of Materials Research
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    • v.12 no.1
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    • pp.21-26
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    • 2002
  • In order to search new phosphors for plasma display panel(PDP), phosphate hosts which has a host excitation band at around 150nm were prepared and their luminescent properties were investigated. In the preparation of $YPO_4: Eu\; and\; (Y,Gd)PO_4: Eu$ phosphors, the effect of oxide and oxalate starting materials on prepared phosphors were compared in terms of relative emission intensities and particle characteristics. The results showed that oxalate starting materials gave better performance in emission intensities and smaller size and more round shape phosphors which would be more applicable for high resolution display. Additionally, Gd, V, Nb and Ta ions were doped to $YPO_4:Eu$ and the luminescent properties of the resulant solid solutions were investigated to find efficient sensitizer. Among these ions, Gd, V and Nb ions increased the emission intensities of parent phosphor to around 10%. While Nb ion gave the best result in emission intensities, CIE color coordinate were improved by doping V ion into $YPO_4:Eu$ phosphor to give x=0.6523, y=0.3406 compared to commercial sample.

Recent progress in oxide phosphor thin-film electroluminescent devices

  • Minami, Tadatsugu;Miyata, Toshihiro
    • 한국정보디스플레이학회:학술대회논문집
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    • 2006.08a
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    • pp.27-32
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    • 2006
  • The present status and prospects for further development of thin-film electroluminescent (TFEL) devices using oxide phosphors are described. High-luminance oxide TFEL devices have been recently developed using a new combinatorial deposition technique featuring rf magnetron sputtering with a subdivided powder target. In addition, new flexible oxide TFEL devices have been fabricated on an oxide ceramic sheet and operated stably in air above $200^{\circ}C$.

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