• Title/Summary/Keyword: Oxide module

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Semiconductor-Type MEMS Gas Sensor for Real-Time Environmental Monitoring Applications

  • Moon, Seung Eon;Choi, Nak-Jin;Lee, Hyung-Kun;Lee, Jaewoo;Yang, Woo Seok
    • ETRI Journal
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    • v.35 no.4
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    • pp.617-624
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    • 2013
  • Low power consuming and highly responsive semiconductor-type microelectromechanical systems (MEMS) gas sensors are fabricated for real-time environmental monitoring applications. This subsystem is developed using a gas sensor module, a Bluetooth module, and a personal digital assistant (PDA) phone. The gas sensor module consists of a $NO_2$ or CO gas sensor and signal processing chips. The MEMS gas sensor is composed of a microheater, a sensing electrode, and sensing material. Metal oxide nanopowder is drop-coated onto a substrate using a microheater and integrated into the gas sensor module. The change in resistance of the metal oxide nanopowder from exposure to oxidizing or deoxidizing gases is utilized as the principle mechanism of this gas sensor operation. The variation detected in the gas sensor module is transferred to the PDA phone by way of the Bluetooth module.

Environmental Monitoring Sub-System for Ubiquitous Terminal Using Metal Oxide Nano-Material Gas Sensor (나노 금속산화물을 이용한 유단말용 환경 모니터링 서브 시스템)

  • Moon, S.E.;Lee, H.Y.;Lee, J.W.;Park, J.;Park, S.J.;Kwak, J.H.;Maeng, S.;Park, K.H;Kim, J.;Udrea, F.;Milne, W.I.
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.06a
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    • pp.63-63
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    • 2008
  • Environmental monitoring sub-system has been developed using gas sensor module, Bluetooth module and PDA phone. The gas sensor module consists of $NO_2or$ CO gas sensor and signal processing chips. Gas sensor is composed of the micro-heater, sensing electrode and sensing material. Metal oxide nano-material was selectively deposited on a substrate with micro-heater and was integrated to the gas sensor module. The change in resistance of the metal oxide nano-material due to exposure of oxidizing or deoxidizing gases is utilized as the principle of this gas sensor operation mechanism. This variation detected in the gas sensor module was transferred to the PDA phone by way of Bluetooth module.

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A study on development of 1kW SOFC test system (1kW급 연료전지 평가시스템 개발에 관한 연구)

  • Hwang, Hyun Suk;Lee, Sanghoon;Lee, Juyoung
    • Journal of Satellite, Information and Communications
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    • v.11 no.3
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    • pp.24-27
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    • 2016
  • In this study, a 1kW Solid Oxide Fuel Cell(SOFC) test system was developed. A SOFC is the most promising power system to provide the higher efficient(over 50%) for house application area(1~10kW). To develop the optimized test system, the temperature control module that controls the preprocess and reaction condition, the flow control module that controls of the mass of reactants, and the electric loader that tests the discharge performance condition, etc. The temperature control module was designed to provide the high control resolution(under $1^{\circ}C$ at $750^{\circ}C$ of operating temperature) using K-type thermal couple. The flow control module was designed control blower and heater precisely using the phase control method. And the electric loader is designed that provide CV, CC, CR discharge mode and minimized the operating error adopting the independent DC-DC converter on analog input and output module. The performance of the developed SOFC test system showed that the accuracy of stack voltage was 0.15% at 80V and stack current was 0.1% at 100A.

Development of three-dimensional thermal oxidation process simulator and analysis the characteristics of multi-dimensional oxide growth (1 Giga급 집적회로 구현을 위한 3차원 산화 공정 시뮬레이터 개발 및 산화층 성장 특성 분석에 관한 연구)

  • 이준하;황호정
    • Journal of the Korean Institute of Telematics and Electronics A
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    • v.32A no.8
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    • pp.107-118
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    • 1995
  • Three-dimensional simulator for thermal oxidation process is developed. The simulator is consisted by two individual module, one is analytic-model module and the other is numerical-model module. The analytic-model which uses simple complementary-error function guarantees fast calculation in prediction of multi-dimensional oxidation process. The numerical-model which is based on boundary element method (BEM), has a good accuracy and suitable for various process conditions. The results of this study show that oxide growth is retarded at the corner of hole structure and enhanced at the corner of island structure. These effects are reson of different distribution of oxidant diffusion and mask stress. The utility of models and simulator developed in this study is demonstrated by using it to predict not only traditional shape of LOCOS but also process effects in small geometry.

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Thermal Runaway Prevention of MOV and Safety Improvement of Power Line System and Internal Electronic Device Circuit Using a Phosphorous Switching Module (인청동 스위칭 모듈을 이용한 전력계통 및 전자기기 내부회로의 MOV 열폭주 방지와 안전성 개선)

  • Kim, Ju-Chul;Choi, Gyung-Ray;Lee, Sang-Joong
    • Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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    • v.25 no.9
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    • pp.75-79
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    • 2011
  • The MOV(Metal Oxide Varistor), a voltage limiting element, has been installed in the SPD(Surge Protective Device) or inside the internal circuit of an electronic appliance for protection of the electric power system and electronic device against electrical surge. Such an MOV is exposed, however, to the risk of the thermal runaway resulting from excessive voltage and deterioration. In this paper, a reciprocal action has been tested and analyzed using a phosphorus bronze switching module and the low-temperature solder. And a short current break characteristic test linked with the circuit breaker has been performed to limit the inrush current when the MOV breaks down. It has been proven that the phosphorus bronze switching module installed inside the internal circuit can improve the safety of the power line system and the electronic device.

A Study on the Characteristics of Dye-sensitized Solar Cell Module Using Titanium Thin Film (티타늄 박막을 이용한 염료감응형 태양전지 모듈 특성에 관한 연구)

  • Oh, Byeong-Yun;Kim, Phil-Jung
    • Journal of IKEEE
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    • v.25 no.1
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    • pp.69-75
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    • 2021
  • In this work, we consider the fabrication method and electrical characteristics of dye-sensitized solar cells (DSSCs), which use titanium (Ti) metal thin films to replace expensive fluorine tin oxide (FTO) electrodes. The thickness of the Ti thin film was changed by adjusting the deposition time of the Ti, and the surface resistance decreased as the thickness of the Ti thin film became thicker. The thickness of the Ti thin film was shown to be similar to the surface resistance of the FTO thin film at approximately 190nm and the DSSC with a thickness of approximately 250nm showed the highest energy conversion efficiency of 4.24%. Furthermore, the possibility of commercialization was confirmed by fabricating and evaluating the DSSC module.

Convergence Study on Fabrication and Plasma Module Process Technology of ReRAM Device for Neuromorphic Based (뉴로모픽 기반의 저항 변화 메모리 소자 제작 및 플라즈마 모듈 적용 공정기술에 관한 융합 연구)

  • Kim, Geunho;Shin, Dongkyun;Lee, Dong-Ju;Kim, Eundo
    • Journal of the Korea Convergence Society
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    • v.11 no.10
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    • pp.1-7
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    • 2020
  • The manufacturing process of the resistive variable memory device, which is the based of neuromorphic device, maintained the continuity of vacuum process and applied plasma module suitable for the production of the ReRAM(resistive random access memory) and process technology for the neuromorphic computing, which ensures high integrated and high reliability. The ReRAM device of the oxide thin-film applied to the plasma module was fabricated, and research to improve the properties of the device was conducted through various experiments through changes in materials and process methods. ReRAM device based on TiO2/TiOx of oxide thin-film using plasma module was completed. Crystallinity measured by XRD rutile, HRS:LRS current value is 2.99 × 103 ratio or higher, driving voltage was measured using a semiconductor parameter, and it was confirmed that it can be driven at low voltage of 0.3 V or less. It was possible to fabricate a neuromorphic ReRAM device using oxygen gas in a previously developed plasma module, and TiOx thin-films were deposited to confirm performance.