• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.543-544
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• 2008

In the fabrication of inverted top emission organic light emitting diodes (ITOLEDs), the organic layers are damaged by high-energy plasma sputtering process for transparent top anode. In this study, the plasma process induced damages on metal oxide hole injection layers (HILs) including $WO_3$, $MoO_3$, and $V_2O_5$ as buffer layer are examined. With the result of IV characteristic of hole-only devices, we propose that $MoO_3$ and $V_2O_5$ are stable materials against plasma sputtering process.

• Journal of the Korean Ceramic Society
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• v.29 no.1
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• pp.48-52
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• 1992

Indium tin oxide (ITO) layers are of considerable interest on account of the combination of properties they provide high electrical conductivity, high infrared reflection with high solar energy transmission, high transmission in the visible range. We are concerned about the variation of the spectral transmittances and sheet resistances as the thickness of SiO2-ZrO2 barrier layer and ITO layers and heat treating conditions are changed. Transmittances and reflectivities were studied by measuring UV-VIS-NIR-, FT-IR spectroscopy. ITO films are crack free, homogeneous and of polycrystalline cubic structure. The microstructure of good ITO films shows a narrow grain size distribution and mean value of 100 nm. The selectivity of absorbing properties is improved by increasing the thickness of ITO films. The increase of sheet resistance of ITO films are due to the increase in the reaction between films and glass substrate.

• Journal of Technologic Dentistry
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• v.32 no.4
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• pp.337-340
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• 2010

Purpose: This study was performed to compare sintering conditions for fabrication of porous Ti implant. Methods: The porous Ti implant samples were fabricated by sintering of spherical Ti powders in vacuum and atmosphere conditions. Surface morphology, composition and phase were analyzed by FE-SEM, EDX and XRD. Results: Sintered Ti implant in the vacuum consisted of particles connected in three dimensions by clear necking without excessive oxide layers. However, sintered Ti implant in atmosphere was formed excessive oxide layers with non-stoichiometric compounds. Conclusion: The porous Ti implant can be sintered in vacuum condition preferably.

• Journal of the Korean Ceramic Society
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• v.28 no.11
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• pp.859-864
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• 1991

High quality lead titanate thin films were fabricated by spin coating on a silicon substrate. The resulting dried gel layers were uniform in thickness through 2$\times$2 $\textrm{cm}^2$ area, and polycrystalline perovskite structures developed almost crack free with a heat treatment above 50$0^{\circ}C$ in films with thickness above 360 nm. Metastable pyrochlore structures were observed in films with thickness of 160 nm when heat treated at 500 and $600^{\circ}C$, but these structure did not appear in films with thickness of 360 nm. The thickness dependence in crystal structure of films was studied. by varying the substrate condition and analyzing the interface between the film and substrate. In native oxide films on silicon stbstrates, amorphous dried gel layers were heterogeneously nucleated. Metastable cubic pyrochlore structure could be crystallized in amorphous native oxide.

• Proceedings of the KIEE Conference
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• 1995.11a
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• pp.609-611
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• 1995

In this study, we experimented the properties of SOG film as sacrificials layers in surface micromachining and made $SiO_2$ films through spin, bake, cure process. When we culled SOG films once, SOG film thickness is 1000 $\sim$ 3000 ${\AA}$. Then we coaled 200-${\AA}$ SOG film on 9000 ${\AA}$-CVD oxide and then we fabricated test structure, cantilever and ring/beam structure. We estimated deformed structure by SEM. As the results, The deformation of the structure layer in the SOG-coated sacrificial layers is small compared with that or the structure layer on CVD oxide or PSG. In the future, we use multi coated SOG films, SOG film become adequate material as sacrificial layer.

• Journal of the Korean Ceramic Society
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• v.38 no.9
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• pp.782-786
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• 2001

Cobalt silicide has been employed to Embedded DRAM (Dynamic Random Access Memory) and Logic (EDL) as contact material to improve its speed. We have investigated the influences of Ti and TiN capping layers on cobalt-silicided Complementary Metal-Oxide-Semiconductor (CMOS) device characteristics. TiN capping layer is shown to be superior to Ti capping layer with respect to high thermal stability and the current driving capability of pMOSFETs. Secondary Ion Mass Spectrometry (SIMS) showed that the Ti capping layer could not prevent the out-diffusion of boron dopants. The resulting operating current of MOS devices with Ti capping layer was degraded by more than 10%, compared with those with TiN.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2004.05a
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• pp.74-76
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• 2004

It is the new promising method of obtaining the information about the state of a surface of a solid body, thin and multilayer structures. An idea of the method consists in reading and analyzing the relations U(t), dU/dt(t), dU/dt(U) on an electrical cell when anodizing an investigated object. By these relation it is possible to control the presence of impurities in the metal on the path of the anodization front, a structure and characteristics of the object being oxidized as well as of an oxide which is being formed during anodizing, the change in composition of the oxide layer, the thickness and composition of metallic and dielectric layers being a part of the layers boundaries.

• Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
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• 2000.11a
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• pp.3-8
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• 2000

Chemical nature of nascent metal surfaces which is one of the important active sources for tribochemical reactions was investigated using a newly developed method. Some enhanced activities were observed. For example, organic compounds chemisorbed on nascent gold surfaces and aromatic compounds decomposed on nascent nickel surfaces resulting in hydrogen evolution. Non-polar compounds such as organic sulfides had a higher chemisorption activity on nascent steel surfaces than polar compounds such as fatty acids and phosphates. Organic sulfides reacted directly with nascent steel surfaces and the surface was covered with metal sulfides. The activity for the chemisorption of organic compounds was closely dependent on the electronic structure of metals. Although benzene chemisorbed very easily on nascent surfaces of transition metals, it did not chemisorb ell nascent surfaces of simple metals. Boundary lubricating behaviors of extreme pressure additives were explained on the bases of the chemical activities of nascent surfaces obtained in this investigation. Under mild conditions, polar compounds such as fatty acids and phosphates were effective for boundary lubrication, because surfaces are covered with oxide layers. On the other hand, sulfides were more effective under severe conditions where the oxide layers were removed and the nascent surfaces were formed.

• Advances in nano research
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• v.13 no.5
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• pp.427-435
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• 2022

Static stability behaviors of annular sandwich plates constructed from two layers of particle-reinforced nanocomposites have been investigated in the present article. The type of nanoscale particles has been considered to be graphene oxide powders (GOPs). The particles are assumed to have uniform and graded dispersions inside the matrix and the material properties have been defined according to Halpin-Tsai micromechanical model. The core layer is assumed to have honeycomb configuration. Annular plate has been formulated according to thin shell assumptions considering geometrical nonlinearities. After solving the governing equations via Galerkin's technique, it is showed that the post-buckling curves of annular sandwich plates rely on the core wall thickness, amount of GOP particles, sector radius, and thickness of layers.

• Electrical & Electronic Materials
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• v.7 no.2
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• pp.145-151
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• 1994

The multi-dielectric layer SiOz/Si3N4/SiO2(ONO) is used to scale down the memory device. In this paper, the change of composition in ONO layer due to the process condition and the conduction mechanism are observed. The composition of the oxide film grown through the oxidation of nitride film is analyzed using auger electron spectroscopy(AES). AES results show that oxygen concentration increases at the interface between oxide and nitride layers as the thickness -of the top oxide layer increases. Results of I-V measurement show that the insulating properties improve as the thickness of the top oxide layer increases. But when the thickness of the nitride layer decreases below 63.angs, insulating peoperties of film 28.angs. of top oxide and film 35.angs. turn over showing that insulating property of film 28.angs. of top oxide is better than that of film 35.angs. of top oxide. This phenomenon of turn over is thought as the result of generation of surface state due to oxygen flow into nitride during oxidation process. As the thickness of the top oxide and nitride increases, the electrical breakdown field increases, but when the thickness of top oxide reaches 35.angs, the same phenomenon of turn over occurs. Optimum film thickness for scaled multi-layer dielectric of memory device SONOS is estimated to be 63.angs. of nitride layer and 28.angs. of top oxide layer. In this case, maximum electrical breakdown field and leakage current are 18.5[MV/cm] and $8{\times}{10^-12}$[A], respectively.