• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.117-117
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• 2008

In MIM capacitor, poly-Si bottom electrode is replaced with metal bottom electrode. Noble metals can be used as bottom electrodes of capacitors because they have high work function and remain conductive in highly oxidizing conditions. In addition, they are chemically very stable. Among novel metals, Ru (ruthenium) has been suggested as an alternative bottom electrode due to its excellent electrical performance, including a low leakage of current and compatibility to high dielectric constant materials. Chemical mechanical planarization (CMP) process has been suggested to planarize and isolate the bottom electrode. Even though there is a great need for development of Ru CMP slurry, few studies have been carried out due to noble properties of Ru against chemicals. In the organic chemistry literature, periodate ion ($IO_4^-$) is a well-known oxidant. It has been reported that sodium periodate ($NaIO_4$) can form $RuO_4$ from hydrated ruthenic oxide ($RuO_2{\cdot}nH_2O$). $NaIO_4$ exist as various species in an aqueous solution as a function of pH. Also, the removal mechanism of Ru depends on solution of pH. In this research, the static etch rate, passivation film thickness and wettability were measured as a function of slurry pH. The electrochemical analysis was investigated as a function of pH. To evaluate the effect of pH on polishing behavior, removal rate was investigated as a function of pH by using patterned and unpatterned wafers.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.168-168
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• 2008

Dimension of a transistor has rapidly shrunk to increase the speed of device and to reduce the power consumption. However, it is accompanied with several problems like direct tunneling through the gate dioxide layer and low conductivity characteristic of poly-Si gate in nano-region. To cover these faults, study of new materials is urgently needed. Recently, high dielectric materials like $Al_2O_3$, $ZrO_2$, and $HfO_2$ are being studied for equivalent oxide thickness (EOT). However, poly-Si gate is not compatible with high-k materials for gate-insulator. Poly Si gate with high-k material has some problems such as gate depletion and dopant penetration problems. Therefore, new gate structure or materials that are compatible with high-k materials are also needed. TiN for metal/high-k gate stack is conductive enough to allow a good electrical connection and compatible with high-k materials. According to this trend, the study on dry etching of TiN for metal/high-k gate stack is needed. In this study, the investigations of the TiN etching characteristics were carried out using the inductively coupled $BCl_3$-based plasma system and adding $Cl_2$ gas. Dry etching of the TiN was studied by varying the etching parameters including $BCl_3$/Ar gas mixing ratio, RF power, DC-bias voltage to substrate, and $Cl_2$ gas addition. The plasmas were characterized by optical emission spectroscopy analysis. Scanning electron microscopy was used to investigate the etching profile.

• Korean Chemical Engineering Research
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• 제56권5호
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• pp.705-710
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• 2018

본 연구에서는 백금 나노입자가 분산된 산화구리 나노구조체 기반의 비효소적 글루코스 센서를 개발하였다. 3차원 구조의 산화구리 나노구조체는 hydrothermal method를 통해 Cu foil 위에 직접 합성되었으며, 합성된 나노구조체 표면위에 전기화학적 증착법으로 백금 나노입자들을 분산시켜 전극을 제작하였다. 준비된 전극 샘플의 표면 구조는 주사 전자 현미경(SEM)과 에너지분산형 분광기(EDS)을 이용하여 분석하였으며, 전기화학적 특성 및 센싱 성능은 알칼리 상태에서 시간대전류법 (CA)과 순환전압 전류법(CV)을 통하여 조사하였다. 개발된 비효소적 글루코스 센서는 산화구리 나노구조체와 백금 나노입자의 접목에 의한 시너지 효과 덕분에 높은 감도와 넓은 선형 구간, 빠른 감응 속도 등의 향상된 센싱 특성을 보였다.

• Bulletin of the Korean Chemical Society
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• 제32권10호
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• pp.3629-3633
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• 2011

The effect of a dense $TiO_2$ blocking layer prepared using the sol-gel method on the performance of dye-sensitized solar cells was studied. The blocking layer formed directly on the working electrode, separated it from the electrolyte, and prevented the back transfer of electrons from the electrode to the electrolyte. The dyesensitized solar cells were prepared with a working electrode of fluorine-doped tin oxide glass coated with a blocking layer of dense $TiO_2$, a dye-attached mesoporous $TiO_2$ film, and a nano-gel electrolyte, and a counter electrode of Pt-deposited FTO glass. The gel processing conditions and heat treatment temperature for blocking layer formation affected the morphology and performance of the cells, and their optimal values were determined. The introduction of the blocking layer increased the conversion efficiency of the cell by 7.37% for the cell without a blocking layer to 8.55% for the cell with a dense $TiO_2$ blocking layer, under standard illumination conditions. The short-circuit current density ($J_{sc}$) and open-circuit voltage ($V_{oc}$) also were increased by the addition of a dense $TiO_2$ blocking layer.

• Corrosion Science and Technology
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• 제9권2호
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• pp.81-86
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• 2010

The mechanisms of selective oxidation of intercritically annealed CMnAl TRIP steels in a Continuous Galvanizing Line (GCL) were studied by cross-sectional observation of the surface and sub-surface regions by means of High Resolution Transmission Electron Microscopy (HR-TEM). The selective oxidation and nitriding of an intercritically annealed CMnAl TRIP steel in a controlled dew point 10%$H_2+N_2$ atmosphere resulted in the formation of c-xMnO.$MnO_2$ (1${\leq}$x<3) and c-xMnO.$Al_2O_3$ ($x{\geq}1$) particles on the steel surface. Single crystal c-xMnO.$SiO_2$ ($2{\leq}x{\leq}4$) oxide particles were also observed on the surface. A thin film of crystalline c-xMnO.$SiO_2$ (2${\leq}$x<3) and c-xMnO.$Al_2O_3$ ($x{\geq}1$) was present between these particles. In the sub-surface region, internal oxidation, nitriding and intermetallic compound formation were observed. In the first region, large crystalline c-xMnO.$SiO_2$ ($1{\geq}x{\geq}2$) and c-xMnO.$Al_2O_3$ ($x{\geq}1$) oxides particles were present. In the second region, c-AlN particles were observed, and in a third region, small $MnAl_x$ (x>1) intermetallic compound particles were observed.

• 대한전자공학회논문지
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• 제26권4호
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• pp.67-72
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• 1989

부분산화공정(LOCOS : local oxidation of silicon)에서 발생하는 새부리의 길이를 줄이기 위하여 상온 플라즈마 질화막을 잉요한 시로운 공정에 대해 연구하였다. 400W, 100kHz의 교류 전력에 의한 질소 플라즈마로 실리콘 위에 두께가 $100{\AA}$ 미만의 균일한 실리콘 질화막을 형성시킬 수 있었다. 이렇게 형성된 질화막은 실리콘을 4000${\AA}$두께로 산화시키는 공정에서 실리콘의 산화를 효과적으로 방지할 수 있었고 새부리의 길이를 0.2${mu}m$로 감소시킬 수 있다는 것을 SEM 단면도로 확인하였다. 이 길이는 두꺼운 LPCVD 질화막을 이용한 기존의 부분산화공정에서의 0.7${mu}m$ 보다 훨씬 줄어든 것이다. Secco에칭 후 SCM으로 단면을 보았을때 새부리 근처에서 결정 결함을 관찰할 수 없었다. 이 새로운 LOCOS공정으로 $N^+/P^-\;well,\;P^+/N^-$ well 다이오드를 만들어 누설전류를 측정하였다. 그 결과 기존의 LOCOS 공정에 의한 성질보다 우수하거나 동등한 성질을 나타내었다.

• Corrosion Science and Technology
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• 제19권3호
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• pp.122-130
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• 2020

In this study, a corrosion failure analysis of a heat transport pipe was conducted, as the result of a pinhole leak. Interestingly, the corrosion damage occurred externally in the pipeline, resulting in severe thickness reduction near the seam line. Also, while a stable magnetite protective film formed on the inner surface, the manganese oxide formation occurred only on the outer surface. The interior and exterior of the pipe were composed of ferrite and pearlite. The large manganese sulfide and alumina inclusions were found near the seam line. In addition, the manganese sulfide inclusions resulted in grooving corrosion, which progressed in the seam line leading to the reduction in the thickness, followed by the exposure of the alumina in the matrix to the outer surface. To note, the corrosion was accelerated by pits generated from the boundaries separating the inclusions from the matrix, which resulted in pinhole leaks and water loss.

• 대한화학회지
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• 제37권6호
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• pp.549-554
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• 1993

티타늄 금속판을 공기산화와 수증기 산화하여 만든 Ti$O_{2-x}$ 박막을 시료로 사용하여 1M NaOH 용액에서 광전기화학적 성질을 연구하였다. 높은 온도에서 제조된 Ti$O_{2-x}$ 전극들은 낮은 온도에서 제조된 전극들보다 더 음의 값으로 주어지는 flat band potential($V_{fb}$)과 더 높은 donor density($N_D$)를 가졌다. 전극전위의 변화에 따른 광전류 측정과 Mott-Schottky plot로부터 얻은 $V_{fb}$는 -0.95 ∼ -1.1 V 사이에서 비슷한 값으로 주어졌다. 자외부 영역의 광을 완전히 차단하는 TiO2 단결정을 필터로 하여 가시부 영역의 광전류를 측정할 때 분해능이 좋은 slit를 사용한 경우 좋은 sub band gap 광반응을 볼 수 있었다.

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2011년도 자성 및 자성재료 국제학술대회
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• pp.7-8
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• 2011

Although yttrium iron garnet (YIG) has provided a great vehicle for the study of spin waves in the past, associated difficulties in film deposition and device fabrication using YIG had limited the applicability of spin waves to practical devices. However, microfabrication techniques have made it possible to characterize both the resonant as well as the travelling characteristics of spin waves in permalloy (Py). A variety of methods have been used for measuring spin waves, including Brillouin light scattering (BLS), magneto-optic Kerr effect (MOKE), vector network analyzer ferromagnetic resonance (VNA-FMR), and pulse inductive microwave magnetometry (PIMM). PIMM is one of the most preferred methodologies of measuring travelling spin waves. In this method, an electrical impulse is applied at one of two coplanar waveguides patterned on top of oxide-insulated Py, producing a local disturbance in the magnetization of the Py. The resulting disturbance travels down the Py in the form of waves, and is inductively picked up by the other coplanar waveguide. We investigate the effect of the pulse width of excitation pulses on the generated spin wave packets using both experimental results and micromagnetic simulations. We show that spin wave packets generated from electrical pulses are a superposition of two separate spin wave packets, one generated from the rising edge and the other from the falling edge, which interfere either constructively or destructively with one another, depending upon the magnitude and direction of the field bias conditions. A method of spin wave amplitude modulation is also presented by the linear superposition of spin waves. We use interfering spin waves resulting from two closely spaced voltage impulses for the modulation of the magnitude of the resultant spin wave packets.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2009년도 춘계학술발표대회
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• pp.22.2-22.2
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• 2009

Currently, metal silicides become increasingly more essential part as a contact material in complimentary metal-oxide-semiconductor (CMOS). Among various silicides, NiSi has several advantages such as low resistivity against narrow line width and low Si consumption. Generally, metal silicides are formed through physical vapor deposition (PVD) of metal film, followed by annealing. Nanoscale devices require formation of contact in the inside of deep contact holes, especially for memory device. However, PVD may suffer from poor conformality in deep contact holes. Therefore, Atomic layer deposition (ALD) can be a promising method since it can produce thin films with excellent conformality and atomic scale thickness controllability through the self-saturated surface reaction. In this study, Ni thin films were deposited by thermal ALD using bis(dimethylamino-2-methyl-2-butoxo)nickel [Ni(dmamb)2] as a precursor and NH3 gas as a reactant. The Ni ALD produced pure metallic Ni films with low resistivity of 25 $\mu{\Omega}cm$. In addition, it showed the excellent conformality in nanoscale contact holes as well as on Si nanowires. Meanwhile, the Ni ALD was applied to area-selective ALD using octadecyltrichlorosilane (OTS) self-assembled monolayer as a blocking layer. Due to the differences of the nucleation on OTS modified surfaces toward ALD reaction, ALD Ni films were selectively deposited on un-coated OTS region, producing 3 ${\mu}m$-width Ni line patterns without expensive patterning process.