• Applied Science and Convergence Technology
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• v.26 no.2
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• pp.21-25
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• 2017

The shape of the reflection spectrum is complex and appears to overlap with several signals, because the surface state is uneven due to the natural oxide film, so that the spectrum becomes a complicated signal shape divided into regions 1 and 2 due to diffuse reflection. On the other hand, it is seen that the reflection spectrum after PEO surface treatment is overlapped with several signals. In addition, the reflectance of the energy band varies from 1.32 to 1.46 eV. Usually, the MgO-type oxide film was observed at an energy band of ~4.2 eV. The thickness of the oxide film was increased as the DC voltage was increased by the thin film thickness meter (QuaNix; 7500M) after Plasma Electrolytic Oxidation (; PEO) surface treatment. This is because the higher the DC voltage, the easier the binding of the $OH^-$ ions in the solution solution and the $Mg^+$ ions of the magnesium alloy. An important part of the bonding of ordinary ions is the energy source (plasma) which can promote bonding. However, when a certain threshold voltage or more is applied, the material is adversely affected. The oxide film of the surface may be destroyed without increasing the thickness of the oxide film, that is, whitening of the material may occur.

• Bulletin of the Korean Chemical Society
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• v.28 no.12
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• pp.2454-2458
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• 2007

Exploring the basic concepts for the design of CO2-philic molecules is important due to the possibility for “green” chemistry in supercritical CO2 as substitute solvent systems. The Lewis acid-base interactions and C?H…O weak hydrogen bonding were suggested as two key factors for the solubility of CO2-philic molecules. We have performed high level quantum mechanical calculations for the van der Waals complexes of CO2 with trimethylphosphate and trimethylphosphine oxide, which have long been used for metal extractants in supercritical CO2 fluid. Structures and energies were calculated using the MP2/6-31+G(d) and recently developed multilevel methods. These studies indicate that the Lewis acid-base interactions have larger impact on the stability of structure than the C?H…O weak hydrogen bonding. The weak hydrogen bonds in trimethylphosphine oxide have an important role to the large supercritical CO2 solubility when a metal is bound to the oxygen atom of the P=O group. Trimethylphosphate has many Lewis acid-base interaction sites so that it can be dissolved into supercritical CO2 easily even when it has metal ion on the oxygen atom of the P=O group, which is indispensable for a good extractant.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.830-833
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• 2003

This paper describes the fabrication and characteristics of 3C-SiCOI sotctures by SDB and etch-back technology for high-temperature MEMS applications. In this work, insulator layers were formed on a heteroepitaxial 3C-SiC film grown on a Si(001) wafer by thermal wet oxidation and PECVD process, successively. The pre-bonding of two polished PECVD oxide layers made the surface activation in HF and bonded under applied pressure. The wafer bonding characteristics were evaluated by the effect of HF concentration used in the surface treatment on the roughness of the oxide and pre-bonding strength. Hydrophilic character of the oxidized 3C-SiC film surface was investigated by ATR-FTIR. The strength of the bond was measured by tensile strengthmeter. The bonded interface was also analyzed by SEM. The properties of fabricated 3C-SiCOI structures using etch-back technology in TMAH solution were analyzed by XRD and SEM. These results indicate that the 3C-SiCOI structure will offers significant advantages in the high-temperature MEMS applications.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.10
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• pp.615-624
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• 2017

This study investigated the various physical and electrical effects of silicon direct bonding. Direct bonding means the joining of two wafers together without an intermediate layer. If the surfaces are flat, and made clean and smooth using HF treatment to remove the native oxide layer, they can stick together when brought into contact and form a weak bond depending on the physical forces at room temperature. An IR camera and acoustic systems were used to analyze the voids and bonding conditions in an interface layer during bonding experiments. The I-V and C-V characteristics are also reported herein. The capacitance values for a range of frequencies were measured using a LCR meter. Direct wafer bonding of silicon is a simple method to fuse two wafers together; however, it is difficult to achieve perfect bonding of the two wafers. The direct bonding technology can be used for MEMS and other applications in three-dimensional integrated circuits and special devices.

• Korean Journal of Metals and Materials
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• v.47 no.9
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• pp.573-579
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• 2009

Titanium/aluminum/stainless steel(Ti/Al/STS) clad materials have received much attention due to their high specific strength and corrosion-resisting properties. However, it is difficult to fabricate these materials, because titanium oxide is easily formed on the titanium surface during heat treatment. The aim of the present study is to derive optimized cladding conditions and thereupon obtain the stable quality of Ti/Al/STS clad materials. Ti sheets were prepared with and without pre-heat treatment and Ti/Al/STS clad materials were then fabricated by cold rolling and a post-heat treatment process. Microstructure of the Ti/Al and STS/Al interfaces was observed using a Scanning Electron Microscope(SEM) and an Energy Dispersed X-ray Analyser(EDX) in order to investigate the effects of Ti pre-heat treatment on the bond properties of Ti/Al/STS clad materials. Diffusion bonding was observed at both the Ti/Al and STS/Al interfaces. The bonding force of the clad material with non-heat treated Ti was higher than that with pre-heat treated Ti before the cladding process. The bonding force decreased rapidly beyond $400^{\circ}C$, because the formed Ti oxide inhibited the joining process between Ti and Al. Bonding forces of STS/Al were lower than those of Ti/Al, because brittle $Fe_3Al$, $Al_3Fe$ intermetallic compounds were formed at the interface of STS/Al during the cladding process. In addition, delamination of the clad material with pre-heat treated Ti was observed at the Ti/Al interface after a cupping test.

• Journal of the Microelectronics and Packaging Society
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• v.20 no.4
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• pp.81-85
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• 2013

Wafer stacking technology becomes more important for the next generation IC technology. It requires new process development such as TSV, wafer bonding, and wafer thinning and also needs to resolve wafer warpage, power delivery, and thermo-mechanical reliability for high volume manufacturing. In this study, Cu CMP which is the key process for wafer bonding has been studied using Cu CMP and oxide CMP processes. Wafer samples were fabricated on 8" Si wafer using a damascene process. Cu dishing after Cu CMP and oxide CMP was $180{\AA}$ in average and the total height from wafer surface to bump surface was approximately $2000{\AA}$.

• The Journal of Korean Academy of Prosthodontics
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• v.28 no.2
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• pp.29-51
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• 1990

This study was designed to compre the tensile bond strength of 4-META containging denture base resin to Co-Cr alloys after various surface treatments. Especially the surface treatment of sandblasting the mental with aluminum oxide and treating in oxidizing solution composed of 3% aqueous sulfuric acid with 1% potassium manganate were compared. Effect of surface roughness on bonding was measured after sandblasting with 50um, 300um aluminun oxide and polishing with emery pater. Also the effects of wax and wax solvent on bonding were observed. According to the type of polymerization process, heat-cured Meta-Dent resin and autopolymerizing Meta-Fast resin were used. For some specimnens, the tensile bond strength were measured agter three pre-conditions : 1day after bonding, immersed in water at $75^{\circ}C{\pm}3^{\circ}C$ for 4weeks, under normal ambient condition for 4weeks. The following results were obtained from this study : 1. The bond strengths of resins containing 4-META were significantly higher than those of conventional denture base resins(p<0.05). 2. Autopolymerizing Meta-Fast resin had higher bond strength than heat-cured Meta-Dent, resin(p<0.05). 3. The bond strengths of Biosil and Nobilium to 4-META containging resins were not significally different(p>0.05). 4. Stable adhesion can be achieved when mechanically roughen the metal surface by snadblasting with $50{\mu}m$ aluminum oxide than treating in an oxidizing soluing with potassium manganate(p<0.05). 5. Once the metal surface is contaminated with wax, the bond srtength decreased greatly in spite of wax wash with boiling water. But the bond strength recovered significantly with the use of wax solvent 6. Meta-Dent resin had higher bond strength when roughen the metal surface with $50{\mu}m$ aluminum oxide than with $300{\mu}m$ aluminum oxide(p<0.05). In case of Meta-Fast, resin, the use of $300{\mu}m$aluminum oxide was a little advantageous of bonding, but was statistically insignificant(p>0.05).

• Journal of the Korean Ceramic Society
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• v.11 no.1
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• pp.3-9
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• 1974

The role of added metal oxide in the adherence mechanism of low melting glass to several metal plates such as oxygen free high conducting copper, low carbon steel, chrominum galvanized on copper, and stainless steel was investigated. The metal oxide which added to glass were cupric oxide, ferric oxide, chromic oxide, and stainless steel oxide. The glass to that various metla oxide were added, sealed with several metal plates in the electric furnace at $650^{\circ}C$ for 5 minutes. The results as follows; 1) The interfacial reaction was promoted and strong chemical bonding with glass and metals by which the surface energy was decreased showed excellent sealing by addition of metal oxide. 2) When the interfacial reaction of glass and metals was promoted by addition of metal oxide found out that various adhernece mechanism were related to the sealing. 3) When the amount of metal oxide addition was 3-5% the excellent sealing was achieved.

• Proceedings of the KWS Conference
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• 2005.06a
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• pp.393-395
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• 2005

The bonding for Aluminum and Copper in the air is investigated in this study. This bonding method does not include the special process of removing aluminum oxide films. In case of this bending, each metal Is heated at bonding temperature where is above eutectic temperature of Al-Cu system and below melting point of Aluminum. The liquefaction around the bonding surface occurs after the diffusion at solid state of each metal. This phenomenon is predicted by the temperature range above eutectic temperature of Al-Cu equilibrium phase diagram.

• Proceedings of the KWS Conference
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• 1990.11a
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• pp.45-49
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• 1990