• Proceedings of the KIEE Conference
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• 2002.11a
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• pp.145-146
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• 2002

Metal-Oxide-Semiconductor Field Effect Transistor(MOSFET)의 게이트 유전체로서 실리콘 산화막($SiO_2$)은 두께가 1.5nm 이하로 낮아질 경우 터널링 전류가 증가하여 누설 전류가 증가하게 된다. 이로 인해 사용 전력이 증가하게 되고, 소자의 성능을 떨어뜨리게 된다. 본 논문은 높은 유전상수와 넓은 에너지 밴드 갭을 갖는 $HfO_2$를 RF Magnetron Sputter를 이용하여 증착한 다음 RTA 열처리를 통하여 HfSixOy를 생성하여 전기적 특성을 측정하였다. 실험결과, 열처리 시간이 증가함에 따라 HfSixOy의 분포가 균일해지는 반면 두께가 얇아져서 누설 전류가 증가 하는 것으로 관찰되었다. $HfO_2$를 게이트 유전막으로 증착하였을 경우 $HfO_2/HfSixOy/Si$의 이중 박막 구조가 생겨 유전상수를 떨어뜨리는 반면, 실리콘 기판과 우수한 계면 특성을 갖는 HfSixOy만을 증착할 경우 양질의 단층 게이트 유전막으로 활용가능 할 것으로 사료된다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.99-102
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• 2003

The electronic structure of ${\beta}-MnO_2$ having impurities in the site of Mn was theoretically investigated by $DV-X_{\alpha}$ (the discrete variation $X{\alpha}$) method, which is a sort of the first principle molecular orbital method using Hatre-Fock-Slater approximation. The used cluster model was $[Mn_{14}MO_{56}]^{-52}$ (M = transient metals). Madelung potential and spin polarization were considered for more exact calculations. As results of calculations, the energy levels of all electron included in the model were obtained. The energy band gap and positions of impurity levies were discussed in association with impurity 34 orbital that seriously affect electrical properties of $MnO_2$. It was shown that the energy band gap decreased with the increase of the atomic number of transient metal impurity.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.300-303
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• 2004

To fill the gap of films for metal-to-metal space High density plasma fluorinated silicate glass (HDP FSG) is used due to various advantages. However, FSG films can have critical drawbacks such as bonding issue of top metal at package, metal contamination, metal peel-off, and so on. These problems are generally caused by fluorine penetration out of FSG film. Hence, FSG capping layers such like SRO(Silicon Rich Oxide) are required to prevent flourine penetration. In this study, their characteristics and a capability to block fluorine penetration for various FSG capping layers are investigated through FTIR analysis. FTIR graphs of both SRO using ARC chamber and SiN show that clear Si-H bonds at $2175{\sim}2300cm^{-1}$. Thus, Si-H bond at $2175{\sim}2300cm^{-1}$ of FSG capping layers lays a key role to block fluorine penetration as well as dangling bond.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.309-312
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• 2004

The electronic structure of ZnO oxide semiconductor having high optical transparency and good electric conductivity was theoretically investigated by $DV-X_{\alpha}$(the discrete variation $X_{\alpha}$) method, which is a sort of the first principle molecular orbital method using Hatre-Fock-Slater approximation. The electrical and optical properties of ZnO are seriously affected by the addition of impurities. The imnurities are added to ZnO in order to increase the electric conductivity of an electrode without losing optical transparency. In this study, the effect of impurities of III and IV family on the band structure, impurity levels and the density of state of ZnO were investigated. The cluster model used for calculations was $[MZn_{50}O_{53}]^{-2}$(M=elements belonging to III and IV family).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.5-6
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• 2005

High performance SiGe heterostructure metal-oxide-semiconductor field effect transistors(MOSFETs) were fabricated using well-controlled delta-doping of boron and SiGe/Si heterostructure epitaxal layers grown by reduced pressure chemical vapor deposition. In this paper, we report 1/f noise characteristics of the SiGe MOSFETs measured under various bias conditions of the gate and drain voltages changing in linear operation regions. From the noise spectral density, we found that the gate and drain voltage dependence of the noise represented same features, as usually scaled with $f^1$. However, 1/f noise was found to be much lower in the device with boron delta-doped layer, by a factor of $10^{-1}\sim10^{-2}$ in comparion with the device fabricated without delta-doped layer. 1/f noise property of delta-doped device looks important because the device may replace bipolar transistors most commonly embedded in high-frequency oscillator circuits.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.571-572
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• 2006

Tungsten CMP needs interconnect of semiconductor device ULSI chip and metal plug formation, CMP technology is essential indispensable method for local planarization. This Slurry development also for tungsten CMP is important, slurry of metal wiring material that is used present is depending real condition abroad. It is target that this research makes slurry of efficiency that overmatch slurry that is such than existing because focus and use colloidal silica by abrasive particle to internal production technology development. Compared selectivity of slurry that is developed with competitor slurry using 8" tungsten wafer and 8" oxide wafer in this experiment. And removal rate measures about density change of $H_2O_2$ and Fe particle. Also, corrosion potential and current density measure about Fe ion and Fe particle. As a result, selectivity find 83:1, and expressed similar removal rate and corrosion potential and current density value comparing with competitor slurry.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.10
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• pp.864-869
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• 2009

The measurement of contact wire uplift in electric railways is one of the most important test parameters to accepting the maximum permitted speed of new electric vehicles and pantographs. The contact wire uplift can be measured over short periods when the pantograph passes monitoring stations. In this paper, a high-speed image measurement system and its image processing method are being developed to evaluate dynamic uplift of overhead contact wires caused by pantograph contact forces of Korea Tilting Train eXpress (TTX) and Korea Train eXpress (KTX). The image measurement system was implemented utilizing a high-speed CMOS (Complementary Metal Oxide Semiconductor) camera and gigabit ethernet LAN. Unlike previous systems, the uplift measurement system using high speed camera is installed on the side of the rail, making maintenance convenient. On-field verification of the uplift measurement system for overhead contact wire using high speed camera was conducted by measuring uplift of the TTX followed by operation speeds at the Honam conventional line and high-speed railway line. The proposed high-speed image measurement system to evaluate dynamic uplift of overhead contact wires shows promising on-field applications for high speed trains such as KTX and TTX.

• Proceedings of the KIEE Conference
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• 2003.11c
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• pp.789-792
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• 2003

pMOSFET having 10 ${\mu}um$ thickness Gd layer has been tested to be used as a slow neutron sensor. The total thermal neutron cross section for the Gd is 47,000 barns and the cross section value drops rapidly with increasing neutron energy. When slow neutrons are incident to the Gd layer, the conversion electrons are emitted by the neutron absorption process. The conversion electrons generate electron-hole pairs in the $SiO_2$ layer of the pMOSFET. The holes are easily trapped in Oxide and act as positive charge centers in the $SiO_2$ layer. Due to the induced positive charges, the threshold turn-on voltage of the pMOSFET is changed. We have found that the voltage change is proportional to the accumulated slow neutron dose, therefore the pMOSFET having a Gd nuclear reaction layer can be used for a slow neutron dosimeter. The Gd-pMOSFET were tested at HANARO neutron beam port and $^{60}CO$ irradiation facility to investigate slow neutron response and gamma response respectively. Also the pMOSFET without Gd layer were tested at same conditions to compare the characteristics to the Gd-pMOSFET. From the result, we have concluded that the Gd-pMOSFET is very sensitive to the slow neutron and can be used as a slow neutron dosimeter. It can also be used in a mixed radiation field by subtracting the voltage change value of a pMOSFET without Gd from the value of the Gd-pMOSFET.

• Journal of the Korean institute of surface engineering
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• v.49 no.4
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• pp.382-388
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• 2016

NiO nanoparticles were synthesized by hydrothermal method for the application to ethanol gas sensor. They were composited with $Co_3O_4$ nanoparticles to improve the sensitivity to ethanol gas. Scanning electron microscopy revealed that the synthesized NiO nanoparticles were plate-shaped with the approximate size and thickness of 60 - 120 nm and 20 nm, respectively. On the other hand, $Co_3O_4$ nanoparticles mixed with NiO was observed to be spherical with the size range of 30 - 50 nm. The sensitivities of NiO sensors composited with $Co_3O_4$ nanoparticles at an optimal ratio of 8 : 2 were enhanced to approximately 1.44 - 1.79 times as high as those of as-synthesized NiO sensors for the ethanol concentration of 10 - 200 ppm at $200^{\circ}C$. The mechanism of the improved ethanol gas sensing of the NiO sensors composited with $Co_3O_4$ nanoparticles was discussed.

• Journal of the Korean Applied Science and Technology
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• v.18 no.2
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• pp.118-126
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• 2001

Micelle formation and adsorption at the $Ti0_{2}$ interface of a series of polystyrene-polythylene oxide(PS-PEO) block copolymer in aqueous solution was studied using fluorescence probing and small-angle X-ray methods. Further, the stability of aqueous $Ti0_{2}$ dispersion in the presence of copolymer was investigated by microelectrophoresis, optical density and sedimentation measurements. The dissolution of pyrene as fluorescent probe in aqueous surfactant solution leads to a slow decrease of the $I_{1}/I_{3}$ ratio, as the copolymer concentration increase; $I_{1}$ and $I_{3}$ are respectively the intensities of the first and third vibrionic peaks in the pyrene fluorescence emission. The behaviour was due to the characteristics of the copolymers and/or to the copolymer association efficiency in water. Moreover, the adsorption at the plateau level increases with decreasing PEO until chain length. The zeta potential of $TiO_{2}$ particles decreases with increasing copolymer concentration and reaches a plateau value. Finally, stabilization using block copolymers was more effective with samples having higher weight fractions of PS block.