• Journal of the Semiconductor & Display Technology
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• v.17 no.4
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• pp.27-31
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• 2018

The effect of $NH_3$ plasma passivation on the chemical and electrical characteristics of ALD HfAlO dielectric on the InGaAs substrate was investigated. The results show that $NH_3$ plasma passivation exhibit better electrical & chemical performance such as much lower leakage current, lower density of interface trap(Dit) level, and low unstable interfacial oxide. $NH_3$ plasma passivation can effectively enhance interfacial characteristics. Therefore $NH_3$ plasma passivation improved the HfAlO dielectric performance on the InGaAs substrate.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.176-176
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• 2003

The effects of oxide thickness and gate length of MgO/GaN metal oxide semiconductor field effect transistors (MOSFETs) on I-V, threshold voltage and breakdown voltage characteristics were examined using a drift-diffusion model. The saturation drain current scales in an inverse logarithmic fashion with MgO thickness and is < 10$^{-3}$ A.${\mu}{\textrm}{m}$$^{-1}$ for 0.5 ${\mu}{\textrm}{m}$ gate length devices with oxide thickness > 600 $\AA$ or for all 1 ${\mu}{\textrm}{m}$ gate length MOSFETs with oxide thickness in the range of >200 $\AA$. Gate breakdown voltage is > 100 V for gate length >0.5 ${\mu}{\textrm}{m}$ and MgO thickness > 600 $\AA$. The threshold voltage scales linearly with oxide thickness and is < 2 V for oxide thickness < 800 $\AA$ and gate lengths < 0.6 ${\mu}{\textrm}{m}$. The GaN MOSFET shows excellent potential for elevated temperature, high speed applications.

• Transactions on Electrical and Electronic Materials
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• v.16 no.5
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• pp.234-240
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• 2015

Amorphous oxide-based thin-film transistors (TFTs) have drawn a lot of attention recently for the next-generation high-resolution display industry. The required field-effect mobility of oxide-based TFTs has been increasing rapidly to meet the demands of the high-resolution, large panel size and 3D displays in the market. In this regard, the current status and major trends in the high mobility oxide-based TFTs are briefly reviewed. The various approaches, including the use of semiconductor, dielectric, electrode materials and the corresponding device structures for realizing high mobility oxide-based TFT devices are discussed.

• Korean Journal of Materials Research
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• v.30 no.9
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• pp.441-446
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• 2020

Synthesizing nanostructured thin films of oxide semiconductors is a promising approach to fabricate highly efficient photoelectrodes for hydrogen production via photoelectrochemical (PEC) water splitting. In this work, we investigate the feasibility as an efficient photoanode for PEC water oxidation of zinc oxide (ZnO) nanostructured thin films synthesized via a simple method combined with sputtering Zn metallic films on a fluorine-doped tin oxide (FTO) coated glass substrate and subsequent thermal oxidation of the sputtered Zn metallic films in dry air. Characterization of the structural, optical, and PEC properties of the ZnO nanostructured thin film synthesized at varying Zn sputtering powers reveals that we can obtain an optimum ZnO nanostructured thin film as PEC photoanode at a sputtering power of 40 W. The photocurrent density and optimal photocurrent conversion efficiency for the optimum ZnO nanostructured thin film photoanode are found to be 0.1 mA/㎠ and 0.51 %, respectively, at a potential of 0.72 V vs. RHE. Our results illustrate that the ZnO nanostructured thin film has promising potential as an efficient photoanode for PEC water splitting.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.196-197
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• 2006

In this paper, two types of vertical SIT(Static Induction Transistor) structures are proposed to improve their electrical characteristics including the blocking voltage. Besides, the two dimensional numerical simulations were carried out using ISE-TCAD to verify the validity of the device and examine the electrical characteristics. First, a trench gate region oxide power SIT device is proposed to improve forward blocking characteristics. Second, a trench gate-source region power SIT device is proposed to obtain more higher forward blocking voltage and forward blocking characteristics at the same size. The two proposed devices have superior electrical characteristics when compared to conventional device. In the proposed trench gate oxide power SIT, the forward blocking voltage is considerably improved by using the vertical trench oxide and the forward blocking voltage is 1.5 times better than that of the conventional vertical power SIT. In the proposed trench gate-source oxide power SIT, it has considerable improvement in forward blocking characteristics which shows 1500V forward blocking voltage at -10V of the gate voltage. Consequently, the proposed trench oxide power SIT has the superior stability and electrical characteristics than the conventional power SIT.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.35 no.1
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• pp.80-85
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• 2022

ZnO-based transparent conductive films have been widely studied to achieve high performance optoelectronic devices such as next generation flexible and transparent display systems. In order to achieve a transparent flexible ZnO-based device, a low temperature growth technique using a flexible polymer substrate is required. In this work, high quality flexible ZnO films were grown on colorless polyimide substrate using atomic layer deposition (ALD). Transparent ZnO films grown from 80 to 200℃ were fabricated with a metal-semiconductor-metal structure photodetectors (PDs). As the growth temperature of ZnO film increases, the photocurrent of UV PDs increases, while the sensitivity of that decreases. In addition, it is found that the response times of the PDs become shorter as the growth temperature increases. Based on these results, we suggest that high-quality ZnO film can be grown below 200℃ in an atomic layer deposition system, and can be applied to transparent and flexible UV PDs with very fast response time and high photocurrent.

• Safety and Health at Work
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• v.11 no.4
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• pp.500-508
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• 2020

Background: Research on the status of many chemicals used in the semiconductor industry is needed. The purpose of this study was to describe the overall status of chemical use in the semiconductor industry in Korea and to examine it from a health perspective. Methods: Data on the status of chemical use and safety data sheets at 11 of 12 major semiconductor workplaces in Korea were collected. The number of chemical products and chemical constituents, quantities of chemicals, and trade secret ingredients used, as well as the health hazards were examined. Results: On average, 210 chemical products and 135 chemical constituents were used at the surveyed workplaces. Among all chemical products, 33% (range: 16-56%) contained at least one trade secret ingredient. Most of the trade secret ingredients were used in the photolithography process. Several carcinogens, including sulfuric acid, chromic acid, ethylene oxide, crystalline silica, potassium dichromate, and formaldehyde were also used. Only 29% (39 of 135) of the chemical constituents had occupational exposure limits, and more than 60% had no National Fire Protection Association health, safety, and reactivity ratings. Based on the aforementioned results, this study revealed the following. First, many chemical products and constituents are being used in the semiconductor industry and many products contained trade secret ingredients. Second, many products contained significant amounts of carcinogenic, mutagenic, and reproductive toxicant materials. Conclusion: We conclude that protecting workers in the semiconductor industry against harm from chemical substances will be difficult, due to widespread use of trade secret ingredients and a lack of hazard information. The findings of the status of chemical use and the health and safety risks in semiconductor industry will contribute to epidemiological studies, safe workplace, and worker health protection.

• Proceedings of the Korean Magnestics Society Conference
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• 2007.05a
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• pp.78.1-78.1
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• 2007

• Electrical & Electronic Materials
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• v.16 no.9
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• pp.61.2-61
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• 2003

• Electrical & Electronic Materials
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• v.16 no.9
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• pp.62.3-63
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• 2003