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http://dx.doi.org/10.4313/TEEM.2015.16.5.234

Improvement of Mobility in Oxide-Based Thin Film Transistors: A Brief Review  

Raja, Jayapal (College of Information and Communication Engineering, Sungkyunkwan University)
Jang, Kyungsoo (College of Information and Communication Engineering, Sungkyunkwan University)
Nguyen, Cam Phu Thi (College of Information and Communication Engineering, Sungkyunkwan University)
Yi, Junsin (College of Information and Communication Engineering, Sungkyunkwan University)
Balaji, Nagarajan (Department of Energy Science, Sungkyunkwan University)
Hussain, Shahzada Qamar (Department of Energy Science, Sungkyunkwan University)
Chatterjee, Somenath (Department of Electronics and Communication Engineering, Sikkim Manipal Institute of Technology, Sikkim Manipal University)
Publication Information
Transactions on Electrical and Electronic Materials / v.16, no.5, 2015 , pp. 234-240 More about this Journal
Abstract
Amorphous oxide-based thin-film transistors (TFTs) have drawn a lot of attention recently for the next-generation high-resolution display industry. The required field-effect mobility of oxide-based TFTs has been increasing rapidly to meet the demands of the high-resolution, large panel size and 3D displays in the market. In this regard, the current status and major trends in the high mobility oxide-based TFTs are briefly reviewed. The various approaches, including the use of semiconductor, dielectric, electrode materials and the corresponding device structures for realizing high mobility oxide-based TFT devices are discussed.
Keywords
Metal oxide semiconductors; High mobility TFT; Flat panel displays;
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