• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.380-380
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• 2010

Currently, organic light-emitting diodes (OLEDs) have been proven of their readiness for commercialization in terms of lifetime and efficiency. In accordance with emerging new technologies, enhancement of light efficiency and extension of application fields are required. Particularly inverted structures, in which electron injection occurs at bottom and hole injection on top, show crucial advantages due to their easy integration with Si-based driving circuits for active matrix OLED as well as large open area for brighter illumination. In order to get better performance and process reliability, usually a proper buffer layer for carrier injection is needed. In inverted top emission OLED, the buffer layer should protect underlying organic materials against destructive particles during the electrode deposition, in addition to increasing their efficiency by reducing carrier injection barrier. For hole injection layers, there are several requirements for the buffer layer, such as high transparency, high work function, and reasonable electrical conductivity. As a buffer material, a few kinds of transition metal oxides for inverted OLED applications have been successfully utilized aiming at efficient hole injection properties. Among them, we chose 2 nm of $WO_3$ between NPB [N,N'-bis(1-naphthyl)-N,N'-diphenyl-1,1'-biphenyl-4,4'-diamine] and Au (or Al) films. The interfacial energy-level alignment and chemical reaction as a function of film coverage have been measured by using in-situ ultraviolet and X-ray photoelectron spectroscopy. It turned out that the $WO_3$ interlayer substantially reduces the hole injection barrier irrespective of the kind of electrode metals. It also avoids direct chemical interaction between NPB and metal atoms. This observation clearly validates the use of $WO_3$ interlayer as hole injection for inverted OLED applications.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.240.2-240.2
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• 2013

The device scale of flash memory was confronted with quantum mechanical limitation. The next generation memory device will be required a break-through for the device scaling problem. Especially, graphene is one of important materials to overcome scaling and operation problem for the memory device, because ofthe high carrier mobility, the mechanicalflexibility, the one atomic layer thick and versatile chemistry. We demonstrate the hybrid memory consisted with the metal-oxide quantum dots and the mono-layered graphene which was transferred to $SiO_2$ (5 nm)/Si substrate. The 5-nm thick secondary $SiO_2$ layer was deposited on the mono-layered graphene by using ultra-high vacuum sputtering system which base pressure is about $1{\times}10^{-10}$ Torr. The $In_2O_3$ quantum dots were distributed on the secondary $SiO_2$2 layer after chemical reaction between deposited In layer and polyamic acid layer through soft baking at $125^{\circ}C$ for 30 min and curing process at $400^{\circ}C$ for 1 hr by using the furnace in $N_2$ ambient. The memory devices with the $In_2O_3$ quantum dots on graphene monolayer between $SiO_2$ thin films have demonstrated and evaluated for the application of next generation nonvolatile memory device. We will discuss the electrical properties to understating memory effect related with quantum mechanical transport between the $In_2O_3$ quantum dots and the Fermi level of graphene layer.

• Journal of Welding and Joining
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• 제27권6호
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• pp.74-79
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• 2009

Titanium and titanium alloy can be reproduced immediately even if oxide films($TiO_2$) break apart in sea water. Therefore, since titanium demonstrates large specific strength and outstanding resistance to stress corrosion cracking, crevice corrosion, pitting and microbiologically influenced corrosion in sea water environment, it has been widely applied to heat exchanger for ships. In particular, with excellent elongation, pure titanium may be deemed as optimal material for production of heat exchanger plate which is used with wrinkles formed for efficient heat exchange. Conventional plate type heat exchanger prevented leakage of liquid through insertion of gasket between plates and mechanical tightening by bolts and nuts, but in high temperature and high pressure environment, gasket deterioration and leakage occur, so heat exchanger for LPG re-liquefaction device etc do not use gasket but weld heat exchanger plate for use. On the other hand, since welded plate cannot be separated, it is important to obtain high quality reliable welds. In addition, for better workability and production performance, lasers that can obtain weldment with large aspect ratio and demonstrate fast welding speed even in atmospheric condition not in vacuum condition are used in producing products. So far, 1st report and 2nd report compared and analyzed embrittlement degrees by bead colors of weldment through quantitative analysis of oxygen and nitrogen and measurement of hardness as fundamental experiment for the evaluation of titanium laser welding, and evaluated the welding performance and mechanical properties of butt welding. This study welded specimens in various conditions by using laser and GTA welding machine to apply edge welding to heat exchanger, and evaluated the mechanical strength through tensile stress test. As a result of tensile test, laser weldment demonstrated tensile strength 4 times higher than GTA welds, and porosity could be controlled by increasing and decreasing slope of laser power at overlap area.

• 한국재료학회지
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• 제7권3호
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• pp.180-187
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• 1997

평판형 고체산화물 연료전지용 연결재료로 사용되는 $La_{0.68}Ca_{0.32}Cr_{0.97}O_{3}$박막의 소결조건을 변화시키며 곡강도, 상대밀도 및 전기전도도를 측정하였다. 그 결과 $La_{0.68}Ca_{0.32}Cr_{0.97}O_{3}$의 곡강도는 소결온도와 소결시간이 증가할수록 증가하였고, 상대밀도는 $1400^{\circ}C$, 5시간이상 소결한 시편에서 94%이상을 얻었다. $La_{0.68}Ca_{0.32}Cr_{0.97}O_{3}$의 저온소결은 $Ca_{m}(C_{r}O_{4})_{n}$에 의해 이루어졌음이 관찰되었다. 또한 $La_{0.68}Ca_{0.32}Cr_{0.97}O_{3}$의 전기전도도는 $1400^{\circ}C$, 7시간 소결한 시편의 경우 $1000^{\circ}C$에서 약 100/cm이상을 얻었다.

• 공업화학
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• 제9권5호
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• pp.667-673
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• 1998

염분이 함유된 콘크리트 모사 세공용액 중에서의 철근 부식반응을 Tafel 분극법과 교류 임피던스법에 의해 비교 고찰하였으며, 철근 표면의 거칠기와 산화피막층에 의한 부식거동을 연구하였다. 전기화학적 교류 임피던스법에 의한 철근부식의 진단은 매우 유용하며, 제안된 모델과 실험결과가 잘 일치하였다. 염분농도가 증가할수록 부식전위는 cathodic-방향으로 이동하여 부식확률이 증가하였으며, 부식전류도 동일한 양상을 보였다. 철근 표면의 산화피막은 주사전자현미경과 AES (Auger electron spectroscopy)로 분석하였다. Torch로 15초간 열처리하여 형성된 철근표면의 산화피막은 오히려 철근부식을 촉진하였으며, 철근 표면의 거칠기가 증가할수록 부식속도는 증가하였다. 또한, 초기 콘크리트 모사세공 용액의 온도 증가는 철근 부식속도의 증가를 가져왔다.

• 대한금속재료학회지
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• 제48권6호
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• pp.565-569
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• 2010

We report on the characteristics of indium-oxide-doped ZnO (IZO) ohmic contact to p-GaN. The IZO ohmic contact layer was deposited on p-GaN by a Roll-to-Roll (RTR) sputter method. IZO contact film with a thickness of 360, 230 and 100 nm yielded an ohmic contact resistance of $4.70{\times}10^{-4}$, $5.95{\times}10^{-2}$, $4.85{\times}10^{-1}\;{\Omega}cm^{2}$ on p-GaN when annealed at $600{^{\circ}C}$ for 1 min under a nitrogen ambient, respectively. While the transmittance of IZO film with a thickness of 360 nm slightly increased in the wavelength range of 380-800 nm after annealing, the transmittance rapidly increased up to 80% after annealing at $600{^{\circ}C}$ in the wavelength range of 380~430 nm because the crystallization of IZO film and created Ga vacancies near the p-GaN surface region were affected by the annealing. These results indicate that ohmic contact resistance and transmittance of the IZO films improved.

• 한국자기학회지
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• 제8권6호
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• pp.369-373
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• 1998

본 연구에서는 마그네트론 스퍼터링 법으로 제작한 Ni-Fe/NiO 이층 박에서, NiO 증착 중 Ar 압력에 따른 교환이 방성의 변화를 고찰하엿으며 이를 미세조작과 관련시켜 해석하고자 하였다. 낮은 Ar 압력에서 증착한 Ni-Fe/NiO 이층막은 우수한 교환이방성 특성을 나타내었으나 Ar 압력이 증가함에 따라 교환이방성은 급격하게 감소하였다. 낮은 Ar 압력에서 증착한 시편은 NiO와 Ni-Fe 계면에서 epitaxy 경향을 나타내었으며 그 계면은 평범하고 그 경계는 두렷하게 구분하였다. 그러나 높은 Ar 압력에서 증착한 시편은 NiO와 Ni-Fe의 경계가 뚜렷하게 구분되지 않고 그 계면 또한 평활하지 않았다. 한편 NiO의 조성은 Ar압력의 증가에 따라 산소의 조성이 점점 증가하였다.

• Journal of Magnetics
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• 제10권3호
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• pp.95-98
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• 2005

We report hole-induced ferromagnetism in diluted magnetic semiconductor $Zn_{0.99}Mn_{0.01}$ films grown on $SiO_2/Si$ substrates by reactive sputtering. The p-type conduction with hole concentration over $10^{18}\;cm^{-3}$ is achieved by P doping followed by rapid thermal annealing at $800^{\circ}C$ in a $N_2$ atmosphere. The p-type $Zn_{0.99}Mn_{0.01}O:P$ is carefully examined by x-ray diffraction and transmission electron microscopy. The magnetic measurements for $p-Zn_{0.99}Mn_{0.01}O:P$ clearly reveal ferromagnetic characteristics with a Curie temperature above room temperature, whereas those for $n-Zn_{0.99}Mn_{0.01}O:P$ show paramagnetic behavior. The anomalous Hall effect at room temperature is observed for the p-type film. This result strongly supports hole-induced room temperature ferromagnetism in $p-Zn_{0.99}Mn_{0.01}O:P$.

• 통합자연과학논문집
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• 제14권1호
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• pp.1-5
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• 2021

라디오 진동수 스퍼터를 이용하여 실리콘(110) 기판위에 증착시간을 60분, 120분 그리고 180을 변화시켜서 산화아연 박막을 만들었다. ZnO₂ 박막의 입자 성장면을 X선 회절 장치를 써서 분석한 결과 박막의 주 성장면(002)면과 (103)면의 방향이 증착 시간의 영향을 많이 받았다. 전자 주사 현미경을 통하여 ZnO₂박막의 입자 성장을 관찰 한 결과 ZnO₂박막이 증착 초기에는 성장이 정체되는 인큐베이션 시간이 필요하다가 일정 시간이 지나면 다시 입자 성장이 일어나는 현상이 관찰 되었다. ZnO₂박막의 화학 분석을 한 결과는 증착 시간의 증가가 ZnO₂박막내의 산소의 양과는 변화가 없었지만 Zn의 성분에 변화가 관찰 되어서 박막의 증착 시간이 박막내의 Zn성분에는 영향을 미침을 알 수 있었다.

• 센서학회지
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• 제30권5호
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• pp.309-313
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• 2021

Organic semiconductors have received tremendous attention for their research because of their tunable electrical and optical properties that can be achieved by changing their molecular structure. However, organic materials are inherently unstable in the presence of oxygen and moisture. Therefore, it is necessary to develop moisture and air stable semiconducting materials that can replace conventional organic semiconductors. In this study, we developed a NiO_x thin film through a solution process. The electrical characteristics of the NiO_x thin film, depending on the thermal annealing temperature and UV-ozone treatment, were determined by applying them to the hole injection layer of an organic light-emitting diode. A high annealing temperature of 500 ℃ and UV-ozone treatment enhanced the conductivity of the NiO_x thin films. The optimized NiO_x exhibited beneficial hole injection properties comparable those of 1,4,5,8,9,11-hexaazatriphenylene hexacarbonitrile (HAT-CN), a conventional organic hole injection layer. As a result, both devices exhibited similar power efficiencies and the comparable electroluminescent spectra. We believe that NiO_x could be a potential solution which can provide robustness to conventional organic semiconductors.