• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.207.2-207.2
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• 2013

Oxide-based thin film transistors have been attempted as powerful candidates for driving circuits for active-matrix organic light-emitting diodes and transparent electronics. The oxide TFTs are based on the amorphous multi-component oxides involving zinc, indium, and/or tin elements as main cation sources. The current work employed RF sputtering in order to deposit zinc-tin oxide thin films applicable to transparent oxide thin film transistors. The deposited thin film was characterized and probed in terms of materials and devices. The physical/chemical characterizations were performed using X-ray diffraction, Atomic Force Microscopy, Spectroscopic Ellipsometry, and X-ray Photoelectron Spectroscopy. The thin film transistors were fabricated using a bottom-gated structure where thermally-grown silicon oxide layers were applied as gate-dielectric materials. The inherent properties of oxide thin films are combined with the corresponding device performances with the aim to fabricating the multi-component oxide thin films being optimized towards transparent electronics.

• 한국초전도학회:학술대회논문집
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• 한국초전도학회 2000년도 High Temperature Superconductivity Vol.X
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• pp.111-120
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• 2000

Recently, metal oxide films such as MgO or ZrO$_2$ have been studied as buffer layers to fabricate the superconductor with preferred orientation and as diffusion barriers to prevent the reaction between superconductor and metal substrate. In this research, we focused fabrication and characterization of MgO and ZrO$_2$ films on textured metal substrates. We fabricated MgO and ZrO$_2$ films on the Ni metal sheets by sol-gel dipping method. The microstrcures of the films were investigated by SEM and AES analyses. The films were coated with different cycles and dryed at 400$^{\circ}$C and 500$^{\circ}$C . The final films were heat-treated at 700$^{\circ}$C, 800$^{\circ}$C, and 1000$^{\circ}$C, in air atmosphere. We investigated the alignment of MgO and ZrO$_2$ films on Ni metal sheets by XRD and pole figure. The grain growth of metal oxide films was improved by the increase of the drying temperature and annealing temperature. The grain growth was increased with the annealing temperature. The alignment of metal oxide films depended on the thickness.

• 조명전기설비학회논문지
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• 제28권3호
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• pp.57-62
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• 2014

In this work, molybdenum oxide films were fabricated by heat-treatment method. Fundamental surface characteristics of molybdenum oxide films were investigated using XRD and Raman spectroscopy. From the results, the optimum MoOx films could be obtained under the conditions of thermal treatment temperature of $550^{\circ}C$, oxidation time of 30 minutes and oxygen flow rate of 250sccm. The thermal treatment method offers a simple and effective route for the synthesis of uniform $MoO_3$ films.

• Transactions on Electrical and Electronic Materials
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• 제16권1호
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• pp.5-9
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• 2015

Optical and electrical properties were studied for Antimony doped tin oxide thin films from precursors containing 10, 30, 50, and 70 atom% of Sb deposited on bare sodalime silica, barrier layer coated sodalime silica, and pure silica glass substrates by sol-gel spinning technique. The direct band gaps were found to vary from 3.13~4.12 eV when measured in the hv range of 2.5~5.0 eV, and varied from 4.22~5.08 eV when measured in the range of 4.0~7.0 eV. Indirect band gap values were in the range of 2.35~3.11 eV. Blue shift of band gap with respect to bulk band gap and Moss-Burstein shift were observed. Physical thickness of the films decreased with the increase in % Sb. Resistivity of the films deposited on SLS substrate was in the order of $10^{-2}$ ohm cm. Sheet resistance of the films deposited on barrier layer coated soda lime silica glass substrate was found to be relatively less.

• 한국재료학회지
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• 제17권4호
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• pp.232-235
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• 2007

Indium tin oxide (ITO) films were deposited on polycarbonate CR39 substrate using DC magnetron sputtering. ITO thin films were deposited at room temperature because glass-transition temperature of CR39 substrate is $130^{circ}C$ ITO thin films are used as bottom and top electrodes and for organic thin film transparent transistor (OTFT). The electrodes electrical properties of ITO thin films and their optical transparency properties in the visible wavelength range (300-800 nm) strongly depend on the volume of oxygen percent. The optimum resistivity and transparency of ITO thin film electrode was achieved with a 75 W plasma power, 10 % volume of oxygen and a 27 nm/min deposition rate. Above 85% transparency in the visible wavelength range (300-800 nm) was measured without post annealing process, and resistivity as low as $9.83{\times}^{TM}10^{-4}{\Omega}$ cm was measured at thickness of 300 nm.

• 한국표면공학회지
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• 제31권2호
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• pp.109-116
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• 1998

Highly transparent conductive pure and fluorine-doped tin oxide(FT0, $SnO_2$ : F) films have been prepared by low pressure metal organic chemical vapor deposition (LP-MOCVD) from various mixtures of tetramethyitin(TMT) with oxygen or oxygen containing ozone. The properties of TO films have been changed with the variation of gases, flow rate, and substrate temperature. The nsing of oxygen containing ozone instead of pure oxygen, reduced substrate temperature by 100-$150^{\circ}C$ while maintaining same thickness. The films prepared by using ozone showed the resistivity in the range from $10^~2$ to $10^{~3}\Omega$cm, and the mobiiity from 10 to $14\textrm{cm}^2$/Vs. Fluorine-doped tin oxide films had properties such as the resistivity about $10^{-4}\Omega$cm, and the mobility from 14 to $19\textrm{cm}^2$/Vs.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.405-406
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• 2008

The amorphous indium zinc oxide (IZO) thin films were deposited on polyethersulfone (PES) and glass substrates by facing targets sputtering. IZO thin films deposited as functions of gas flow ratio on PES and glass substrates, respectively. The electrical, optical and structural properties of IZO thin films were evaluated by a Hall Effect Measurement, an X-Ray Diffractormeter, UV/VIS spectrometer in visible range and a scanning electron microscopy, respectively. As-deposited IZO thin films exhibited resistivity of $5.4\times10^{-4}$ and $4.5\times10^{-4}$ [$\Omega$-cm] on PES and glass substrates, respectively. The optical transmittance showed over 85% in the visible region on PES and glass substrates.

• 한국표면공학회지
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• 제30권2호
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• pp.121-127
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• 1997

Vanadium tungsten oxide thin films were formed by RF magnetron sputtering and the effects of tungsten addition on the crystallinity and on the electrochemical behavior were investigated. X-ray analysis revealed that amorphized films could be obtained by tungase addition. In order to investigate the electrochemical behavior of the vanadium tungsten oxide films, electrochemical insertion and extraction of lithium were out in 1m $LiCIO_4$-PC-DME electrolyte using litium metal as a counter electrode. When the tungsten was added to the $V_2O_5$ films, cycling reversibility was considerably improved. Electrochemical test showed the cell capacity of about $70\mu\;Ah/\textrm{cm}^2-\mu\textrm{m}$ when the amount of additive tungseten reached 30 atomic percent. No appreciable degradation of the cell capacity could be observed after hundred cycles of insertion and extration od Li.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.435-438
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• 2001

Thin films of vanadium oxide(VO$\sub$x/) have been deposited by r.f. magnetron sputtering from V$_2$O$\sub$5/ target in gas mixture of argon and oxygen. The oxygen/(oxygen+argon) partial pressure ratio is changed from 0% to 8%. Crystal structure, chemical composition and bonding properties of films sputter-deposited under different oxygen gas pressures are characterized through XRO, XPS, RBS and FTIR measurements. All the films prepared below 8% O$_2$ are amorphous, and those prepared without oxygen are gray indicating the presence of V$_2$O$\sub$$_4$/ phase in the films. V$_2$O$\sub$5/ and lower oxides co-exist in sputter-deposited films and as the oxygen partial pressure is increased the films become more stoichiometric V$_2$O$\sub$5/. The increase of O/V ratio with increasing oxygen gas pressure is attributed to the partial filling of oxygen vacancies through diffusion. It is observed that the oxygen atoms. located on the V-O plane of V$_2$O$\sub$5/ layer participate more readily in the oxidation process.

• Current Photovoltaic Research
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• 제1권2호
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• pp.97-102
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• 2013

Aluminum-doped zinc oxide (AZO) thin films were prepared by dc magnetron sputtering at room temperature and the effect of heat treatment on the structural, electrical and optical properties of the films were examined. As the annealing temperature and time increased, the resistivity decreased and the transmittance improved. All AZO films had c-axis oriented (002) plane of ZnO, regardless of the annealing process employed. As the annealing temperature and time increased, the crystallinity of AZO thin films increased due to the formation of a new ZnO phase in which Al was substituted for Zn. However, at the high annealing temperature of $400^{\circ}C$, the resistivity of the films increased via separation of Zn and Al from ZnO phase due to their low melting points. X-ray diffraction, field emission scanning electron micrograph and Hall effect measurement confirmed the formation of uniformly distributed new grains of ZnO substituted with Al. The variation of Al contents in AZO films was shown to be the primary factor for the changes in resistivity and carrier concentration of the films.